新一代白光LED照明用一种适于近紫外光激发的单一白光荧光粉

首次报道单一Sr2MgSiO5：Eu^2 材料的白光发射性质。发射光谱由两个谱带组成,分别位于470,570nm处,并具有不同的荧光寿命,归结为处于不同格位上的二价铕离子的发射,它们混合成白光。这两个发射带所对应的激发光谱均分布在250～450nm的紫外区,利用该荧光粉和具有400nm近紫外光发射的InGaN管芯制成了白光LED。正向驱动电流为20mA时,色温为5664K;发光色坐标为x=0．33,y=0．34;显色指数为85％;光强达8100cd／m^2。实验表明,器件的色坐标和显色指数等参数随正向驱动电流的变化起伏量小于5％,优于目前商用的蓝光管芯泵浦白光LED,报道的单一白光荧光粉在新一代白光LED照明领域具有广阔的应用前景。     

铜铟硫纳米晶/PMMA复合薄膜的制备与光学性质表征

铜铟硫(CuInS₂)纳米晶具有发射光谱宽、波长易于调控、量子产率高、合成成本低、容易与封装材料复合等优点,在远程白光LED结构中具有广阔的应用前景。远程白光LED结构是针对LED散热问题提出的一种新型封装结构,在这种结构中复合荧光涂层(复合薄膜)与蓝光芯片进行隔离封装,这种结构对复合薄膜中纳米晶的热稳定性的要求大大降低。首先合成出了不同发光波长的CuInS₂纳米晶荧光材料,然后将其封装到PMMA基质中制备了系列的CuInS₂纳米晶/PMMA复合薄膜。通过荧光光谱和紫外可见光谱的方法,针对纳米晶复合薄膜出现的发光波长红移以及不同发光波长纳米晶/PMMA复合薄膜透过率不一致的现象进行了详细研究。     

白光照明LED灯温度特性的研究

分析了荧光粉转换型白光LED照明光源色坐标、显色指数、色温和发光效率与驱动电流和温度的关系。驱动电流的增加将引起蓝光波峰的长移，并随电流的增大而增大；但其对色坐标、色温和显色指并未引起较大的变化，而发光效率发生下降，主要原因为蓝光波峰的红移导致荧光粉与激发波长的不匹配，引起荧光粉发光效率的下降，这个现象在不同环境温度下的发光也得到证实，实验结果认为LED的驱动电流为20mA，温度低于50℃时具有较好的发光效率，而显色指数要通过增加红色成分来改善。     

碳点-纤维素复合红色发光材料制备及性能EI北大核心CSCD

白光LED器件作为新一代绿色固态照明光源,已广泛应用于照明、液晶背光等领域,也与智能照明、物联网技术等高新科技产业密切相关。常用的蓝光芯片复合黄光YAG∶Ce^(3+)(Y 3Al 5O 12∶Ce^(3+))荧光粉的白光器件由于缺少红色光谱的成分,导致器件光谱较窄,显色指数较低,色温偏高。因此,红色荧光粉对改善白光LED的光色品质起到了重要作用。本文首先制备了红色碳点(量子效率28%),通过把红色碳点与纤维素复合,制备了红色荧光粉(量子效率为18%)。该红色荧光粉与黄光YAG∶Ce^(3+)荧光粉混合,封装得到暖白光。结果表明,相较于只有黄光YAG∶Ce^(3+)荧光粉封装的LED,红色荧光粉掺杂之后,在460 nm蓝光芯片的激发下,白光LED的色坐标由(0.30,0.33)变化到(0.33,0.35),色温从7396 K下降到5714 K,显色指数从78.2升高到82.9,实现了由色温高、显示指数低的冷白光向色温低、显色指数高的暖白光的调节。     

色坐标对白光LED光通量的影响

研究了在蓝光芯片加黄色荧光粉制备白光LED方法中,色坐标位置对光通量的影响。在同样蓝光功率条件下,我们对标准白光点(色坐标x=0.33±0.05,y=0.33±0.05)附近不同色坐标位置的光通量进行了计算。假设(0.325,0.332)位置流明效率为100 lm/W,计算得出,最大光通量对应的色坐标位置为(0.35,0.38),光通量为112 lm;最小光通量对应的色坐标位置为(0.29,0.28),光通量为93.5 lm。相对于100 lm的变化幅度达到18.5%。通过与实验数据的对比和分析,进一步验证了白光LED光通量随色坐标增大而增加的这一趋势。     

白光LED极限流明效率的计算

对蓝光芯片加黄色荧光粉制备白光LED方法的流明效率进行了理论计算。根据光度学原理,我们考虑到视觉函数V(λ)的修正,以色坐标为x=0.325,y=0.332,显色指数为81.5,色温为5 914 K的白光LED发光光谱为依据,计算了白光LED流明效率的理论极限:得出每瓦白光LED辐射光功率产生的光通量为298.7 lm,白光LED发射的总光子数为2.7×10¹⁸。在理想情况下,注入一个电子-孔穴对产生一个蓝光光子,设荧光粉的量子效率为1,因此,注入的电子-孔穴对数亦等于白光光子数,进而计算出白光LED每辐射1 W的光功率所需的电功率为1.51 W,上述白光LED发光光谱对应的白光LED的电-光转换的理论极限流明效率为197.8 lm/W。     

顶发射白光OLED微型显示器的蓝光掺杂特性研究

白光OLED微型显示器在信息显示领域具有重要的应用。采用真空镀膜系统,依次蒸镀Ag/ITO复合薄膜作为阳极结构,共蒸制备Mg∶Ag复合膜作为半透明阴极结构,NPB作为空穴传输材料和黄光主体材料,rubrene作为黄光掺杂料,AND作为蓝光主体料,DSA-Ph作为蓝光掺杂料,Alq3作为电子传输材料,以结构和工艺简化的蓝、黄光互补色来实现白光,通过共蒸发形式制备了结构为Ag/ITO/NPB/NPB∶rubrene（1.5%）/ADN∶DSA-Ph（x%/x=2,5,8）/Alq3/Mg∶Ag的白光OLED微型显示器,利用由Photo Research PR655光谱仪、Keithley 2400程控电源组成的光谱测试系统对器件的光电性能进行表征,研究了蓝光掺杂比对白光OLED微型显器性能的影响。结果表明,随着蓝光掺杂比的增加,白光OLED微型显示器的亮度先增加后降低,蓝光、黄光峰位有所偏移,色坐标发生一定的漂移,蓝光色纯度增加,可通过调控发光材料掺杂比实现白光OLED微型显示器性能的可控制备。初步优化获得的蓝、黄混合白光OLED微型显示器的器件,当驱动电压为5.0 V时,器件亮度达到3 679 cd·m-2,CIE坐标为（0.263,0.355）。     

基于Ce:YAG单晶的白光发光二极管性能研究

以Ce:YAG单晶取代传统Ce:YAG荧光粉用于制备白光发光二极管(LED),研究了Ce:YAG单晶厚度及驱动电压的变化对其发射光谱、色坐标、亮度、光视效能和色温的影响。研究结果表明,在基于Ce:YAG单晶的白光LED中,发射光的色坐标以及蓝光与黄绿光之间的相对强度可通过对Ce:YAG单晶片厚度的改变进行调整。在恒定电压驱动下,白光LED样品的亮度、光视效能和色温均随单晶片厚度的减小而增加。当Ce:YAG单晶厚度为0.6mm时,可获得较纯的白发射光,并且其色坐标具有较高的可靠性和稳定性,基本不受驱动电压变化的影响。研究结果表明Ce:YAG单晶是一种可用于新型白光LED的理想荧光材料。     

白光LED用稀土荧光粉的制备和性质

在还原气氛保护下利用高温固相法合成了化学组分为(M₁,M₂)₁₀(PO₄)₆X₂(M₁=Ca,Sr,Ba;M₂=Eu,Mn;X=F,Cl,Br)的可被紫光激发的蓝光、绿光和红光荧光粉,制备了紫光LED芯片+蓝光荧光粉+YAG荧光粉的二基色白光LED;紫光LED芯片+蓝光荧光粉+红光荧光粉的二基色白光LED,以及紫光LED芯片+蓝光荧光粉+绿光荧光粉+红光荧光粉的三基色白光LED。测试了所有制备的白光LED在不同的直流电驱动下的色度坐标、相关色温和显色指数。     

LED结温与光谱特性关系的测量

采用恒定驱动电流改变环境温度和恒定环境温度改变驱动电流两种方法分别对直径5 mm封装的AlGaInP型红光和黄光LED,InGaN型绿光和蓝光LED,以及InGaN蓝光+荧光粉的白光LED的结温与其光谱特性进行了测量,得到了不同条件下LED结温与光谱特性的关系.结果表明;AlGaInP LED的峰值波长与结温有良好线性关系,InGaN LED的峰值波长则与结温没有明显对应关系;但白光LED发射光谱的白、蓝功率比与结温有良好线性关系;对AlGaInP LED及蓝光激发的白光LED,通过光谱特性测量可快速、准确地确定光源系统中各LED的结温继而预测光源系统的有效寿命.     

Progress and prospects of GaN-based LEDs using nanostructures

Progress with GaN-based light emitting diodes(LEDs) that incorporate nanostructures is reviewed,especially the recent achievements in our research group.Nano-patterned sapphire substrates have been used to grow an Al N template layer for deep-ultraviolet(DUV) LEDs.One efficient surface nano-texturing technology,hemisphere-cones-hybrid nanostructures,was employed to enhance the extraction efficiency of In GaN flip-chip LEDs.Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core.Based on the nanostructures,we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask.Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer,the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%.Furthermore,nanostructures have been used for the growth of GaN LEDs on amorphous substrates,the fabrication of stretchable LEDs,and for increasing the3-d B modulation bandwidth for visible light communication.     

纳米折叠InGaN/GaN LED材料生长及器件特性

在以自组织Ni纳米岛为掩膜制作的n-GaN纳米柱上,利用MOCVD方法外延生长了具有折叠InGaN/GaN多量子阱(MQW)的LED结构外延片,进而制作了LED器件.外延片上中下游的光致荧光测试,结果表明外延片具有很好的均匀性.用该外延片制作的LED的电致发光谱,随注入电流增加没有明显蓝移,这表明纳米结构能更好地释放应力,纳米柱上外延生长的多量子阱,具有较低的压电极化电场.正向工作电流20 mA时,LED器件的工作电压为4.6 V. 关键词： 纳米柱LED 光致发光 电致发光     

In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能

利用金属有机物化学气相沉积系统在蓝宝石衬底上通过有源层的变温生长,得到In组分渐变的量子阱结构,从而获得具有三角形能带结构的InGaN/GaN多量子阱发光二极管(LED)(简称三角形量子阱结构LED).变温光致发光谱结果表明,相对于传统具有方形能带结构的量子阱LED(简称方形量子阱结构LED),三角形量子阱结构有效提高了量子阱中电子和空穴波函数的空间交叠,从而增加了LED的内量子效率;电致发光谱结果表明,三角形量子阱结构LED器件与传统结构LED器件相比,明显改善了发光峰值波长随着电流的蓝移现象.通过以上     

Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN

Growths of blue and green multi-quantum wells (MQWs) and light-emitting diodes (LEDs) are realized on lateral epitaxial overgrowth (LEO) GaN, and compared with identical structures grown on conventional GaN. Atomic force microscopy is used to confirm the significant reduction of dislocations in the wing region of our LEO samples before active-region growth. Differences between surface morphologies of blue and green MQWs are analyzed. These MQWs are integrated into LEDs. All devices show a blue shift in the electroluminescence (EL) peak and narrowing in EL spectra with increasing injection current, both characteristics attributed to the band-gap renormalization. Green LEDs show a larger EL peak shift and a broader EL spectrum due to larger piezoelectric field and more indium segregation in the MQWs, respectively. Blue LEDs on LEO GaN show a higher performance than those on conventional GaN; however, no performance difference is observed for green LEDs on LEO GaN versus conventional GaN. The performance of the green LEDs is shown to be primarily limited by the active layer growth quality.     

Progress in research of GaN-based LEDs fabricated on SiC substrate

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated.It is found that the Al GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with Al N buffer layer.To increase the light extraction efficiency of GaN-based LEDs on Si C substrate,flip-chip structure and thin film flip-chip structure were designed and optimized.The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 m A.At 350 m A,the output power,the Vf,the dominant wavelength,and the wall-plug efficiency of the blue LED were 644 m W,2.95 V,460 nm,and 63%,respectively.     

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on （0001） sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spec-ra of membranes show a blue shift of peak positions in InGaN/GaN MQWs, a red shift of peak positions in InGaN/AlGaN MQWs and no shift of peak positions in InGaN/AIlnGaN MQWs from those of samples with substrates. Different changes in Raman scattering spectra and HR-XRD （0002） profile of InGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, are observed. The fact that the strain changes differently among InGaN MQWs with different barriers is confirmed. The AIlnGaN barrier could adjust the residual stress for the least strain-induced electric field in InGaN/AIlnGaN quantum wells.     

MOCVD生长InGaN/GaN MQW紫光LED

利用LP－MOCVD系统生长了InGaN/GaN MQW紫光LED外延片，双晶X射线衍射测试获得了2级卫星峰，室温光致发光谱的峰值波长为399.5nm，FWHM为15.5nm，波长均匀性良好。制成的LED管芯，正向电流20mA时，工作电压在4V以下。     

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.     

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

The high power GaN-based blue light emitting diode (LED) on an 80-μ-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition (MOCVD), hydride vapor-phase epitaxial (HVPE), and laser lift-off (LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), Rutherford back-scattering (RBS), photoluminescence, current-voltage and light output-current measurements. The width of (0002) reflection in XRD rocking curve, which reaches 173" for the thick GaN template LED, is less than that for the conventional one, which reaches 258". The HRTEM images show that the multiple quantum wells (MQWs) in 80-μm-thick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.     

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.