Split bregman method-based background extraction for blob-mura defect detection in thin film transistor-liquid crystal display image

In this paper, we present the results of using a split Bregman method for blob-Mura defect detection in a thin-film transistor-liquid crystal display (TFT-LCD) image. A reference image obtained by the split Bregman method was simply subtracted from a test image to detect blob-Mura defects. For a test image, two resulting images containing black or white bob-Mura defects were obtained separately. Through simulation it was verified that the proposed method has a superior capability for detecting blob-Mura defects.     

Application of piecewise linear regression twice to inspect the defective regions on thin film transistor liquid crystal display panels

Detecting defects in thin film transistor liquid crystal display (TFT-LCD) panels can be difficult due to non-uniform background brightness and slightly different brightness levels between the defective regions and the background. One well-known method is to inspect the defects of TFT-LCD panels using the polynomial approximation method. However, there are some problems such as determination of the polynomial degree and ghost objects. In this paper, to overcome these problems, we propose a new algorithm using the piecewise linear regression twice and Niblack’s method which do not require to determine the polynomial degree for the approximation. Our algorithm effectively removed ghost objects. The experimental results show that our proposed method performed well and was good enough to substitute the polynomial approximation method.     

铟锌氧化物薄膜晶体管局域态分布的提取方法

本文针对铟锌氧化物薄膜晶体管(IZO TFT)的低频噪声特性与变频电容-电压特性展开试验研究,基于上述特性对有源层内局域态密度及其在禁带中的分布进行参数提取.首先,基于IZO TFT的亚阈区I-V特性提取器件表面势随栅源电压的变化关系.基于载流子数随机涨落模型,在考虑有源层内缺陷态俘获/释放载流子效应基础上,通过γ因子提取深能态陷阱的特征温度;基于沟道电流噪声功率谱密度及平带电压噪声功率谱密度的测量,提取IZO TFT有源层内局域态密度及其分布.试验结果表明,带尾态缺陷在禁带内随能量呈e指数变化趋势,其导带底密度N1TA约为3.42×10~(20)cm~(-3)·eV-,特征温度TTA约为135 K.随后,将C-V特性与线性区I-V特性相结合,对栅端寄生电阻、漏端寄生电阻、源端寄生电阻进行提取与分离.在考虑有源层内局域态所俘获电荷与自由载流子的情况下,基于变频C-V特性对IZO TFT有源层内局域态分布进行参数提取.试验结果表明,深能态与带尾态在禁带内随能量均呈e指数变化趋势,深能态在导带底密度NDA约为5.4×10~(15)cm~(-3)·eV~(-1),特征温度TDA约为711 K,而带尾态在导带底密度NTA约为1.99×10~(20)cm~(-3)·eV~(-1),特征温度TTA约为183 K.最后,对以上两种局域态提取方法进行对比与分析.     

Leakage of light in liquid crystal displays and birefringent thin film compensators

This paper elucidates the physical origin of leakage of light in the dark state of liquid crystal displays (LCDs) and describes birefringent thin film compensators to mitigate the problems. There are two fundamental sources of leakage of light in LCDs. They are the leakage of light through a pair of ideal crossed polarizers, and the leakage of light due to elliptical state of polarization after transmitting through the liquid crystal (LC) cell. The leakage of light in the dark state leads to poor contrast ratios and color instability, particularly at large viewing angles. The paper then describes the employment of sixth-wave (λ/6) plates as well as various wave plates that function as birefringent compensators for eliminating the leakage of light in LCDs.     

The fabrication and optical detection of a vertical structure organic thin film transistor

Using vacuum evaporation and sputtering process, we prepared a photoelectric transistor with the vertical structure of Cu/copper phthalocyanine (CuPc)/Al/copper phthalocyanine (CuPc)/ITO. The material of CuPc semiconductor has good photosensitive properties. Excitons will be generated after the optical signal irradiation in semiconductor material, and then transformed into photocurrent under the built-in electric field formed by the Schottky contact, as the organic transistor drive current makes the output current enlarged. The results show that the I–V characteristics of transistor are unsaturated. When device was irradiated by full band (white) light, its working current significantly increased. In full band white light, when V_ec = 3 V, the ratio of light and no light current was ranged for 2.9–6.4 times. Device in the absence of light current amplification coefficient is 16.5, and white light amplification coefficient is 98.65.     

Modeling and computer design of liquid crystal display backlight with light polarization film

The article is devoted to elaboration of the model of scattering polarization film like dual brightness enhancement film (DBEF). This model is used for computer design of backlighting system of liquid crystal display (LCD) where light polarization is important. The model elaboration required development of measurement methods and reconstruction of the parameters for the film polarization, development of the accurate computer model of the polarized light scattering on thin surface. The results of design of LCD backlight with polarization film are presented in the article as well. So it was demonstrated that design of backlight devices with DBEF is possible with help of elaborated software.     

Experimental investigation of one-sided optical transparency in cholesteric liquid crystal thin film

Influence of boundary conditions on optical properties of a layer of cholesteric liquid crystal (CLC) has been investigated. In particular, a sample was obtained which is transparent for circularly polarized light incident from one side and gives losses in the transmission spectrum (within nearly 100 nm wide wavelength range) if light is incident from the opposite side, i.e. exhibits optical diode behavior. Two selective reflection bands were detected in the reflection spectrum of the sample. Spectral position of both selective reflection bands and transmission spectrum are shown to be CLC temperature-controllable.     

液晶空间光调制器在自适应光学中的应用

本文主要包括两方面的内容,一方面描述用液晶光阀产生空间与时间性能可控的小尺寸薄相位屏;另一方面则讨论用液晶空间光调制器实现波前相位畸变校正的可能性。从而表明,这类价格低廉、结构简单而性能可靠的非线性光学器件可望在高性能新型自适应光学系统中得到广泛应用。     

Nematic liquid crystal around a spherical particle: Investigation of the defect structure and its stability using adaptive mesh refinement

We investigate the orientation profile and the structure of topological defects of a nematic liquid crystal around a spherical particle using an adaptive mesh refinement scheme developed by us previously. The previous work [J. Fukuda et al., Phys. Rev. E 65, 041709 (2002)] was devoted to the investigation of the fine structure of a hyperbolic hedgehog defect that the particle accompanies and in this paper we present the equilibrium profile of the Saturn ring configuration. The radius of the Saturn ring r_d in units of the particle radius R₀ increases weakly with the increase of , the ratio of the nematic coherence length to R₀. Next we discuss the energetic stability of a hedgehog and a Saturn ring. The use of adaptive mesh refinement scheme together with a tensor orientational order parameter allows us to calculate the elastic energy of a nematic liquid crystal without any assumption of the structure and the energy of the defect core as in the previous similar studies. The reduced free energy of a nematic liquid crystal, , with L₁ being the elastic constant, is almost independent of in the hedgehog configuration, while it shows a logarithmic dependence in the Saturn ring configuration. This result clearly indicates that the energetic stability of a hedgehog to a Saturn ring for a large particle is definitely attributed to the large defect energy of the Saturn ring with a large radius.Received: 10 December 2003, Published online: 2 March 2004PACS: 61.30.Cz Molecular and microscopic models and theories of liquid crystal structure - 61.30.Jf Defects in liquid crystals - 82.20.Wt Computational modeling; simulation     

一个非晶InGaZnO薄膜晶体管线性区陷阱态的提取方法

非晶InGaZnO(a-IGZO)薄膜在制备过程中形成的缺陷和弱键以陷阱态的形式非均匀分布在a-IGZO的带隙中, 这些陷阱态会俘获栅压诱导的电荷, 影响a-IGZO薄膜晶体管线性区迁移率、沟道电子浓度等, 进而影响线性区的电学性能. 本文基于线性区沟道迁移率与沟道内的自由电荷与总电荷的比值成正比, 分离出自由电荷以及陷阱态电荷. 由转移特性和电容电压特性得到自由电荷以及陷阱态电荷对表面势的微分, 分离出自由电子浓度和陷阱态浓度. 通过对沟道层与栅绝缘层界面运用泊松方程以及高斯定理, 考虑了沟道表面势与栅压的非均匀性关系, 得出自由电子浓度以及陷阱态浓度与表面势的关系, 最后通过陷阱态浓度与表面势求导得到线性区对应的态密度.     

液晶相位调制型声光成像光谱偏振测量研究

新型的声光可调滤波器和双液晶相位可调延迟器相结合的一次成像光谱偏振系统与传统的二次成像光谱系统相比,不仅具有通光孔径大、光利用率高和全系统电调谐等优点,而且还能同时满足AOTF和LCVR的小角度入射,大大提高了光谱测量精度和偏振测量精度。通过实验计算,用拟合修正后的波长0和驱动频率fa关系式进行光谱测量,其相对误差值比用理论公式进行测量时减小约一个数量级。并且只需4组相位延迟量和4幅强度图即可求出全部的斯托克斯Stokes参量。理论分析了当系统考虑入射角度时,其偏振度、线偏振度、圆偏振度和角偏振度的最大相对误差值比只考虑光垂直入射时分别减少约0.306%、0.130%、10.96%和3.783%,为进一步提高系统的测量精度提供了理论基础。     

Large eddy simulation of turbulent premixed combustion using tabulated detailed chemistry and presumed probability density function

A method of chemistry tabulation combined with presumed probability density function (PDF) is applied to simulate piloted premixed jet burner flames with high Karlovitz number using large eddy simulation. Thermo-chemistry states are tabulated by the combination of auto-ignition and extended auto-ignition model. To evaluate the predictive capability of the proposed tabulation method to represent the thermo-chemistry states under the condition of different fresh gases temperature, a-priori study is conducted by performing idealised transient one-dimensional premixed flame simulations. Presumed PDF is used to involve the interaction of turbulence and flame with beta PDF to model the reaction progress variable distribution. Two presumed PDF models, Dirichlet distribution and independent beta distribution, respectively, are applied for representing the interaction between two mixture fractions that are associated with three inlet streams. Comparisons of statistical results show that two presumed PDF models for the two mixture fractions are both capable of predicting temperature and major species profiles, however, they are shown to have a significant effect on the predictions for intermediate species. An analysis of the thermo-chemical state-space representation of the sub-grid scale (SGS) combustion model is performed by comparing correlations between the carbon monoxide mass fraction and temperature. The SGS combustion model based on the proposed chemistry tabulation can reasonably capture the peak value and change trend of intermediate species. Aspects regarding model extensions to adequately predict the peak location of intermediate species are discussed.     

Localized bifurcations and defect instabilities in the convection of a nematic liquid crystal

The stationary and the time-dependent homogeneous ordered states in convection may both become unstable against localized perturbations. Defects are then created and they may contribute to the disorganization of the homogeneous state. We present an experimental study of defects in some homogeneous stationary structures as well as in the traveling-wave states of convection of a nematic liquid crystal. We show that the core of the defects is a germ of the unstable state and it can become unstable under the external stress. Then, either fully homogeneous states with the symmetry of the core, or complex disordered states can develop from the local instability of defects in processes quite similar to displacive transitions in solids. Some of the main features are qualitatively similar to numerical simulations of an appropriate Landau-Ginzburg equation.     

透反区响应时间相等的双盒厚透反液晶显示器

提出了一种透反区响应时间相等的双盒厚透反液晶显示器。该透反液晶显示器在透射区采用了强锚定能边界条件,以缩短其响应时间;在反射区采用了弱锚定能边界条件,以增加其响应时间;采用过压驱动技术,使透反区的响应时间相等。分析了该透反液晶显示器的结构和原理,设计了透射区和反射区的边界锚定能,计算了响应时间和电光特性,得到了透反区响应时间相等,且具有良好电光特性的双盒厚透反液晶显示器。     

InGaZnO薄膜晶体管背板的栅极驱动电路静电释放失效研究

本文通过解析阵列基板栅极驱动(gate driver on array, GOA)电路中发生静电释放(electro-static discharge,ESD)的InGaZnO薄膜晶体管(InGaZnO thin-film transistor, IGZO TFT)器件发现:栅极Cu金属扩散进入了SiN_x/SiO_2栅极绝缘层;源漏极金属层成膜前就发生了ESD破坏;距离ESD破坏区域越近的IGZO TFT,电流开关比越小,直到源漏极与栅极完全短路.本文综合IGZO TFT器件工艺、GOA区与显示区金属密度比、栅极金属层与绝缘层厚度非均匀性分布等因素,采用ESD器件级分析与系统级分析相结合的方法,提出栅极Cu:SiN_x/SiO_2界面缺陷以及这三层薄膜的厚度非均匀分布是导致GOA电路中沟道宽长比大的IGZO TFT发生ESD失效的关键因素,并针对性地提出了改善方案.     

3d电子在立方晶场中的能级和波函数及概率密度图

应用简并微扰论计算了一个3d态的氢原子处于立方晶场中的能级和波函数,并用数学软件Matlab精确地图示了3d电子在立方晶场中的概率密度．     

Superheating in liquid and solid phases during femtosecond-laser pulse interaction with thin metal film

Superheating of the liquid phase caused by non-equilibrium evaporation during femtosecond-laser processing of a thin metal film is investigated by adopting the wave hypothesis along with the two-temperature model. The simulation results show that the superheating in the liquid occurs shortly after the evaporation. For a 100-fs laser pulse of 0.7 J/cm², the maximum degree of superheating in liquid can reach 600 K. The superheating in solid can also be captured in the current model, which can be as high as 300 K. The effects of laser fluence, pulse duration and film thickness on the degree of superheating were studied. A higher laser fluence will increase the degree of superheating in liquid significantly but has little effect for the solid part. In the range adopted in the current work, the pulse duration has little effect on the degree of superheating in both liquid and solid phases.     

Intentionally incorporated defect and its consequences in oxide thin film through Radio Frequency Magnetron Sputtering Technique

Radio Frequency Magnetron Sputtering Technique has been employed to prepare metal oxide thin film of ZnO and CdO. The films were deposited in such condition that some point defects like oxygen vacancies have been intentionally incorporated. The defects appeared with significant modification in the properties of the thin films. The prepared films were characterized by studying with X-ray diffraction study, X-ray photoelectron spectroscopic measurement, optical transmittance measurement, and electrical study. The electrical properties are found to change profoundly with the defect concentration. Consequently the optical properties also have been changed.     

Structures and phase transitions in thin free standing films of an antiferroelectric liquid crystal

The premises of a discrete mean-field model for polar smectic liquid crystals are tested by analyzing the ellipsometric experiments on two, three, and four-layer freestanding films of MHPOBC. The measured temperature dependences of the ellipsometric parameters in a weak dc external field are compared to the predictions of a simple clock model. A very good quantitative agreement is found indicating an odd-even effect: XY structures are stable for odd and Ising-like structures for an even number of layers.