SiC纳米晶薄膜的制备及发光性质研究

用射频磁控溅射及后退火(800℃、1000℃和1200℃)方法,在Si(111)衬底上制备出了SiC纳米晶(nc-SiC)薄膜。傅立叶变换红外光谱(FTIR)、X射线衍射谱(XRD)及扫描电子显微镜(SEM)形貌像等研究表明,制备出的nc-SiC薄膜具有立方结构;样品经800℃、1000℃退火后,表面的纳米晶粒分别为10nm和20nm左右;而1200℃退火后,样品晶化完全。光致发光(PL)研究表明,nc-SiC薄膜室温条件下发射蓝光,发光峰峰位随退火温度的降低发生蓝移且发光峰强度变大;1000℃退火后样品的发光峰在478nm,800℃退火后发光峰在477nm,800℃退火比1000℃退火的样品发光强度高4倍。     

非晶SiO2纳米线的合成及其显微结构和光学性质的研究

本研究以硅片为衬底,热蒸发一氧化硅粉末在较低温度下合成了大量直径均匀的非晶SiO2纳米线.这些纳米线直径分布在15 nm～40 nm之间,长度几十微米.选区电子衍射(SAED)、能谱(EDS)、电子能量损失谱(EELS)分析结果表明这些纳米线为非晶SiO2纳米线.光致发光(PL)谱测试结果显示纳米线在波长550 nm处存在一个较强的PL峰.本文进一步指出了蒸发源SiO粉末的颗粒度和蒸发温度对纳米线生长有强烈的影响.     

核/壳结构ZnS:Mn/ZnS量子点光发射增强研究

利用水溶性前驱体材料在水性介质中制备了ZnS:Mn和ZnS:Mn/ZnS核/壳结构量子点(QDs,quantum dots),并用X射线衍射(XRD)、光致发光(PL)对ZnS:Mn和ZnS:Mn/ZnS核/壳结构QDs的结构和发光性能进行研究.ZnS:Mn和ZnS:Mn/ZnS QDs XRD谱与标准谱吻合,根据De...     

Sn@MnOX核壳结构微/纳米线的合成和结构表征

本文合成了一种新型结构的微/纳米线。利用光学显微镜、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和能量色散X射线谱(EDS)对所合成微/纳米线的形态、组成和微观结构进行研究。结果显示β-Sn微/纳米线作为"核",超薄非晶态MnO_X纳米片作为"壳"层,完全把β-Sn包裹住,形成Sn@MnO_X微/纳米线异质结构。     

RF磁控溅射制备N掺杂Cu2O薄膜及光学特性研究

利用射频(RF)磁控溅射沉积技术,采用Cu2O陶瓷靶作为溅射靶,在N2和Ar气的混合气氛下制备了Cu2O薄膜。通过改变衬底温度和N2流量,研究了RF磁控溅射沉积法对Cu2O薄膜的生长行为、物相结构、表面形貌及光学性能的影响。结果表明,衬底温度为300℃时,低N2流量(12sccm)下沉积的薄膜结构为Cu2O和CuO的混合相,N2流量增大至12sccm时薄膜结构转变为单相的Cu2O;不同N2流量下制备的薄膜均呈现三维的结核生长模式,其表面粗糙度的均方根(RMS)值依赖于N2流量,低N2流量下薄膜表面粗糙度的RMS值随N2流量的增大而增大,高N2流量下,RMS值随N2流量的增大而减小,并在一定N2流量范围内趋于稳定;不同N2流量下制备的薄膜均在475nm附近出现发光峰,峰的相对强度随N2流量的增加而减弱,峰位随N2流量的增加出现蓝移,薄膜的光学带隙Eg约为(2.61±0.03)eV。     

CaBi2Ta2O9:Pr3+黄色荧光粉的制备与性能研究

采用高温固相反应法,制备了系列Pr3+掺杂的CaBi2Ta2O9(CBTO:Pr3+)Bi层状结构铁电氧化物(BLSFs)粉体。利用X射线衍射(XRD)、扫描电子显微镜(SEM)对样品的晶体结构和形貌进行了表征。利用积分球式分光光度计和荧光光谱仪对样品的光学性能进行了分析。XRD结果表明,所生成的样品均为CBTO纯相。样品的吸收和激发光谱表明,在449~500nm波长范围存在Pr3+的f-f跃迁吸收;样品的发射光谱由绿光(525~575nm)和红光(575~700nm)发射两部分组成,避免了白光LED中再吸收的问题。随着Pr3+掺杂浓度的增加,样品的发光强度先增强后减弱,当Pr3+的掺杂浓度为2mol%时发光强度最大。研究了Ca0.98Pr0.02Bi2Ta2O9的热稳定性,并通过计算得到其热猝灭激活能E=0.24eV。显色指数(CIE)色坐标图表明,所制备的样品可以被蓝光有效激发而发出黄光。研究结果表明,CBTO:Pr3+可以用于蓝光LED芯片激发用的黄色荧光粉。     

不同掺杂浓度的CdS：Mn/SiO_2核壳纳米结构的光致发光

通过反胶束法合成了分散性较好的Mn2＋掺杂的CdS/SiO2核壳纳米结构,在合成过程中,没有添加任何偶联剂。利用高分辨透射电镜和电子衍射仪器对合成的纳米颗粒的结构进行了表征。进一步研究了这些纳米颗粒的光致发光谱、光致发光激发谱和电子自旋共振谱,对于不同的Mn2＋掺杂的CdS/SiO2核壳纳米结构的发光特性和机制进行了详细的分析。这些稳定的荧光纳米颗粒可望在生物、医学等方面以及与材料相关的领域内有广泛的应用。     

GaAs/AlGaAs核-壳结构纳米线的生长研究

GaAs/AlGaAs核-壳结构纳米线是制作金属-半导体-金属(MSM)型高速光电探测器最简洁有效的光电材料之一。采用金属有机化学气相沉积(MOCVD)设备,在GaAs(111)B衬底上开展了GaAs/AlGaAs核-壳结构纳米线的生长研究,用场发射扫描电子显微镜(SEM)和微区光荧光谱仪(PL)对制备的GaAs/AlGaAs核-壳结构纳米线样品进行了测试分析。采用已优化的GaAs/AlGaAs核-壳结构纳米线的生长工艺参数,主要研究了AlGaAs壳材料的生长机制,获得了高质量的AlGaAs壳材料,AlGaAs壳材料生长速率约为50 nm/min,Al的原子数分数为14%。这些结果为将来多异质结构纳米线的生长和光电探测器的制备奠定了基础。     

层状下转换材料KLa0.90Nb2O7:Eu3+的制备和发光性质研究

利用高温固相反应法,制备了具有层状钙钛矿结构 的下转换材料KLa0.90Nb₂O₇:Eu³⁺。采用X射线衍射(XRD)、 扫描电子显微镜(SEM)、紫外可见吸收(UV-Vis)和荧光分光光度计分别对产物的晶体结构 、微观形貌和光致发光(PL)性质进行 了检测。XRD结果表明,产物KLa0.90Nb₂O₇:Eu³⁺属正交晶系的钙钛矿结构 晶体,产物中有EuNbO₄的杂相存在。煅烧温度和 时间分别为1150℃、12h是合成KLa0.90Nb₂O₇:Eu³⁺的适 宜条件。PL谱显示,在363nm波长激发下,KLa0.90Nb₂O₇:Eu³⁺有波长为578nm, 592和614nm 3个发光峰。KLa0.90Nb₂O₇:Eu³⁺因层状结构在制备薄膜 器件时具有优势,有望在光伏器件尤其是Si基太阳能电池中增加光电转换效率并且延长器 件使用寿命。     

Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nanowires

4H-SiC/SiO2 nanowires are synthesized and the temperature-dependent photoluminescence （PL） properties of the nanowires are studied. Their structure and chemical composition are studied by scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, X-ray diffraction （XRD）, and Raman spectra. At room temperature, an ul- traviolet PL peak and a green PL band are observed. From the PL spectrum measured in the temperature range from 80 K to 300 K, the free excition emission, donor bound excition emission and their multiple-phonon replicas have been observed in ultraviolet region, and their origins have been identified. Moreover, it has been found that the temperature dependence of the free exciton peak position can be described by standard expression, and the thermal activation en- ergy values extracted from the temperature dependence of the free exciton and bound exciton peak integral intensity are about 40 meV and 181 meV, respectively.     

不同氧化退火工艺下SiO2/SiC界面特性研究

The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.     

Characteristic photoluminescence band in Si-implanted SiO2 grown on Si wafer

A possible mechanism for the photoemission from Si nanocrystals in an amorphous SiO₂ matrix fabricated by ion implantation is reported. We have measured the implantation dose dependence as well as the oxidation effect of the photoluminescence behavior of Si nanocrystals in SiO₂ layers fabricated by ion implantation and a subsequent annealing step. After annealing, a photoluminescence band, peaking just below the 1.7 eV was observed. The peak energy of the photoluminescence was found to be affected by the dose of implanted Si ions, but to be independent of annealing time and excitation photon energy. We also present experimental results of an oxidation induced continuous peak energy shift of the photoluminescence peak, up to around 1.8 eV. This peak energy, however, was found to return to its previous position with re-annealing. These results indicate that, whilst the excitation photons are absorbed by Si nanocrystals, the emission is not simply due to electron–hole recombination inside the Si nanocrystals, but is related to the presence of defects, most likely located at the interface between the Si nanocrystals and the SiO₂, for which the characteristic energy levels are affected by cluster–cluster interactions or the roughness of the interface.     

利用金作为催化剂在不同衬底上制备二氧化硅纳米线

利用金作为催化剂分别在二氧化硅及硅衬底上制备出二氧化硅纳米线。用扫描电子显微镜（SEM）及x射线光电子能谱（XPS）对纳米线进行了结构表征。SEM结果表明二氧化硅纳米线的长度为几个纳米,直径为20-150纳米。XPS结果给出硅与氧的原子比为1:2,说明所得到的为二氧化硅纳米线。二氧化硅纳米线的生长机理为气-液-固（VLS）机制。实验发现退火时间影响二氧化硅纳米线的形貌。我们也讨论了衬底对纳米线生长的影响。     

Effects of wet oxidation/anneal on interface properties ofthermally oxidized SiO2/SiC MOS system and MOSFET's

Effects of wet atmosphere during oxidation and anneal on thermally oxidized p-type and n-type MOS interface properties were systematically investigated for both 4H- and 6H-SiC. Deep interface states and fixed oxide charges were mainly discussed. The wet atmosphere was effective to reduce a negative flatband shift caused by deep donor-type interface states in p-type SiC MOS capacitors. Negative fixed charges, however, appeared near the interface during wet reoxidation anneal. In n-type SIC MOS capacitors, the flatband shift indicated a positive value when using wet atmosphere. The relation between interface properties and characteristics of n-channel planar 6H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) was also investigated. There was little relation between the interface properties of p-type MOS capacitors and the channel mobility of MOSFETs. The threshold voltage of MOSFETs processed by wet reoxidation anneal was higher than that of without reoxidation anneal. A clear relation between the threshold voltage and the channel mobility was observed in MOSFETs fabricated on the same substrate     

Effect of implantation and annealing conditions on the photoluminescence emission of Si nanocrystals ion beam synthesised in SiO2

In this article, we present a systematic study of the evolution of photoluminescence (PL) emission of Si nanocrystals with elaboration conditions. Si nanocrystals synthesised in SiO₂ by ion implantation and annealing at 1100°C show a wide (0.3 eV) and a very intense PL emission centred at 1.5–1.7 eV, linked to the presence of the nanocrystals. The intensity of this emission shows a typical behaviour with the annealing time, with a fast transitory increase to reach an asymptotical saturation. There is a linear increase of the PL intensity at saturation with the dose. Two regimes are clearly observed for the evolution of the PL energy position as a function of the annealing time for different peak supersaturations (s): (i) for s<5%, there is a decrease transient followed by a saturation state of the maximum peak energy, and (ii) for s5% the PL energy presents an increase transient followed by a saturation state.     

石英衬底上磁控溅射SiC膜退火形成SiC纳米线

用射频磁控溅射法在石英片上溅射SiC膜,然后在氮气气氛下1150℃退火3h后,在石英衬底上生长出SiC纳米线。用x射线衍射(XRD)、扫描电镜(SEM)和x光电子能谱(XPS)对样品进行了结构、形貌及组分分析。SEM结果表明,SiC纳米线的直径为20～80纳米,其长度可达7～8微米,甚至于长达十几个微米。     

SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator

In this paper, we compare the electrical characteristics of MOS capacitors and lateral MOSFETs with oxidized Ta₂Si (O-Ta₂Si) as a high-k dielectric on silicon carbide or stacked on thermally grown SiO₂ on SiC. MOS capacitors are used to determine the dielectric and interfacial properties of these insulators. We demonstrate that stacked SiO₂/O-Ta₂Si is an attractive solution for passivation of innovative SiC devices. Ta₂Si deposition and oxidation is totally compatible with standard SiC MOSFET fabrication materials and processing. We demonstrate correct transistor operation for stacked O-Ta₂Si on thin thermally grown SiO₂ oxides. However the channel mobility of such high-k MOSFETs must be improved investigating the interface properties further.     

Temperature dependent resistivity of platinum-carbon composite nanowires grown by focused ion beam on SiO2/Si substrate

Experimental studies of the temperature dependent resistivity of platinum nanowires grown on an oxidised silicon wafer by using focused ion beam (FIB) have been made. A series of 4-terminal resistivity measurements were carried out in the temperature range 50-300 K on single nanowires of width and thickness ∼100 nm grown by decomposition of an organometallic precursor using Ga⁺ ions of different accelerating voltages from 10 keV to 30 keV. Energy dispersive X-ray spectroscopy showed the nanowires to be composed of more than 60% by volume of carbon, the remainder being principally platinum and gallium. The exact composition depends on the accelerating voltage of the ions used. There is clear evidence from cross-sectional microscopy that the material is a composite consisting of a metallic phase present in the form of nanoscale clusters, randomly distributed in a matrix of carbon. Electrical measurements are consistent with this, showing a critical volume concentration for conduction, which is typical of electron transport in composites with percolating metal phase. Results show an unexpectedly high sensitivity of the temperature dependence of resistivity near the critical volume concentration, which has been explained to arise from thermal strain effects. The anomalous temperature/strain effects observed in this investigation might be exploited in temperature measurement and strain sensor applications.