Facile synthesis of silver‐nanobeadwire transparent conductive film by organic‐precursor paint reduction

A new facile process has been developed to synthesize silver nanowire transparent conductive films by reducing high‐aspect‐ratio, needle‐shaped silver carboxylates, prepared as the precursor, while retaining their morphology. Nanowire precursors are simply obtained by ultrasound irradiation when silver (I) oxide and carboxylic acids are used as starting materials. The aspect ratio of the precursors is increased when the ultrasound irradiation is followed by microwave irradiation. Silver nanowires can be easily obtained by reducing these precursors with hydrazine gas or irradiating them with Ar plasma for a short time. The morphology of the resulting nanowires is different from that of typical nanowires that have been reported. The nanowires have porous morphology, where small nanoparticles are connected to form nanobeadwire. The nanobeadwire is considered to increase the transparency of the film because of its rough morphology. This new method can synthesize silver nanobeadwires and fabricate the transparent conductive film simultaneously, in one‐step, so that it can significantly simplify manufacturing processes.     

Structural control and magnetic properties of electrodeposited Co nanowires

Co nanowires with a preferred orientation were fabricated by direct current electrodeposition into the pores of porous anodic alumina membrane, and the structure of Co nanowires was studied by X-ray diffraction and high-resolution transmission electron microscopy with selected-area electron diffraction. It is found that the crystal structure of Co nanowires lies on the deposition potential. When electrodeposition is performed far from equilibrium conditions, i.e., at a high potential, face-centered cubic Co nanowires are deposited, while hexagonal close packing Co nanowires are formed at the low potential. The experimental results indicate that the orientation of the nanowires has effects on the coercivity for both hexagonal close packing (hcp) and face-centered cubic (fcc) Co.     

Mechanical improvement of P(VDF-TrFE) /nickel nanowires conductive nanocomposites: Influence of particles aspect ratio

Nickel nanowires with high aspect ratio (250) were elaborated and incorporated into poly(vinylidene difluoride-trifluoroethylene) up to 30 vol% via solvent mixing way. These nanocomposites are characterized by a conductive behavior with a high electrical conductivity value (10² S m^?1) above a very low percolation threshold (0.75 vol% of metallic nanowires). The introduction of nanowires strongly depressed the matrix crystallinity. Static and dynamic mechanical analysis have been realized at low nanowire volume fraction (< 10 vol%). Below 5 vol% of nanowires, nanocomposites remain ductile. The dynamic mechanical properties are related to the volume fraction of nanowires. A strong increase of the viscoelastic contribution related to the increase of the percentage of amorphous phase is observed. The major effect is the increase of the rubbery modulus. The highest increase of 300% is obtained for only 5 vol% of nanowires; it represents an original mechanical result for low filled composites. The dependence versus nanowire content has been described by adapting the Halpin–Tsai model to high aspect ratio filler. Metallic nanowires create additional entanglements that are randomly distributed in the rubbery polymeric matrix. With their low percolation threshold, metallic nanowires based nanocomposites constitute a new class of multifunctional materials with a high conductivity associated with a ductile polymer matrix characterized by a high rubbery modulus.     

Low-temperature growth of tetragonal tungsten nanowire arrays on tungsten substrate using Ni solid catalysts

Tetragonal tungsten nanowire arrays were successfully fabricated on tungsten substrate using Ni catalysts by chemical vapor deposition (CVD) at 950 °C. The synthesized tungsten nanowires grew along [100] direction, with a high aspect ratio more than 50 and sharp tips. The Ni catalyst was found to be located at the wire's bottom and assisted the nucleation of the tungsten nanowire. Samples were characterized in detail by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) technologies. Based on the analysis of the experimental results, the possible formation mechanism of nanowires was proposed as well.     

Controllable growth of ZnO nanowires with different aspect ratios and microstructures and their photoluminescence and photosensitive properties

ZnO nanowires with variable aspect ratios and microstructures have been prepared by a hydrothermal reaction of Zn foil and Na₂C₂O₄ solution at 140 °C. The ZnO nanowires are single crystalline with the wurtzite structure and grow in the [0 0 0 1] direction, and their aspect ratios and microstructures can be changed by tuning the reaction time and the Na₂C₂O₄ concentration. UV and blue-green emissions that depended on the Na₂C₂O₄ concentration are observed from the ZnO nanowires with different aspect ratios. The photosensitivity of ZnO ultralong nanowires with honeycomb-like micropatterns is found to be about 10 at 5 V.     

The effect of growth rate enhancement on the magnetic properties and microstructures of ac electrodeposited Co nanowires using non-symmetric reductive/oxidative voltage

Non-symmetric reductive/oxidative voltage was employed to electrodeposit the Co nanowires through the alumina barrier layer into porous aluminum oxide templates grown in oxalic acid. The minimum and maximum oxidative voltages were 12 and 18 V while the maximum difference between the oxidative and reductive voltage was 6 V. The effect of barrier layer modification on the growth rate of the Co nanowires during the electrodeposition procedure was studied. In order to investigate the effects of the non-symmetric electrodeposition voltage on the growth rate the wire's length, the saturation magnetization, the instantaneous and the rms current were measured. Different reductive/oxidative voltages enable us to fabricate electrodeposited nanowires with a wide variety of growth rates. Using same reductive voltage, reducing the oxidative voltage increased the growth rate. At the same reductive voltage (18 V), average growth rate was seen to increase 2.5 times, when the oxidative voltage reduces to 12 V from initially 18 V. The barrier layer thickness of the samples made with different non-symmetric reductive/oxidative deposition voltage was investigated through impedance measurement during the deposition procedure. Reducing the growth rate of deposition reduces the intensity of the (1 0 0) preferential direction of hcp phase thereby improving the magnetic properties. Manipulating the growth rate through non-symmetric electrodeposition enables us to fabricate the Co nanowires with coercivity ranging from 460 to 1850 Oe.     

Zn掺杂Z形GaN纳米线的制备及表征

本文以氧化镓、氧化锌和氨气为原料,通过常压化学气相沉积法(APCVD)在Au/Si(100)衬底上成功生长出了Zn掺杂的"Z"形GaN纳米线。利用场发射扫描电镜(FESEM)、X-射线衍射仪(XRD)、透射电子显微镜(TEM)、光致发光谱(PL)等测试方法对样品的形貌、晶体结构及光学性质进行了表征。结果表明:在温度为950℃,氧化镓和氧化锌的质量比为8∶1的条件下,制备出的Zn掺杂Z形GaN单晶纳米线直径为70 nm、长度为数十个微米,生长机理遵循VLS机制。Zn元素的掺杂使GaN纳米线在420 nm处出现了光致发光峰,发光性能有所改善。     

Growth of oriented GaN nanowires by controlling nucleation conditions

GaN nanowires (NWs) were grown on GaN(0001) coated sapphire substrate with Ni/Au catalyst by using metalorganic chemical vapor deposition. Nucleation conditions were investigated for improving the growth orientation of NWs. With decreasing catalyst thickness from 5nm/5nm to 2nm/2nm, the NW orientation was improved and the NW morphology was changed from taper to cylindrical, due to the varying of growth mode. Vertical alignment of NWs can be further improved by inserting an additional high‐temperature (850 ℃) nucleation step with an optimum V/III flow ratio of 20.     

Preparation of copper germanate nanowires with good electrochemical sensing properties

Ternary copper germanate nanowires have been synthesized by the hydrothermal deposition route in an autoclave using germanium dioxide and copper oxide powders as the starting materials as well as the copper germanate nanowires have been investigated for cysteine sensing characteristics. The nanowires with the length of several dozens of micrometers are mainly composed of single crystalline orthorhombic CuGeO₃, which are supported by X‐ray diffraction, selected area electron diffraction, high‐resolution transmission electron microscopy and X‐ray photoelectron spectrum. Room temperature photoluminescence spectrum exhibits strong green light emission ability at 535.4 nm with a broad emission band. The copper germanate nanowires may be controlled grown by controlling the growth conditions of the nanowires. The nanowire growth process is explained using a solid state growth mechanism. The electrochemical analysis demonstrates that the copper germanate nanowires serve as a good electrochemical sensor with excellent electrochemical sensing ability for cysteine and catalytic ability for electron‐transfer process. The electrochemical result of the copper germanate nanowires presents an important advance toward the application for electrochemical sensors operating at room temperature. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Overgrowth of GaN on GaN nanowires produced by mask-less etching

We report on the generation of GaN nanowires (NWs) using mask-less reactive ion etching (RIE). The NWs are believed to be the result of a high etching rate in regions where a high dislocation density is present in the GaN films grown on sapphire substrates. We have studied the effect of defect densities in the original GaN films and its relation to the generation of these NWs. We show that defect reduction in the overgrown GaN is related to the presence of a network of embedded voids generated between these nanowires during the regrowth on the etched nanowires. We show that further reduction in dislocation density can be achieved by repeating the process of nanowire generation and overgrowth. Also we report on the residual strain and curvature in GaN after the first and second embedded voids approach (EVA).     

Fabrication of UV detectors based on ZnO nanowires using silicon microchannel

Aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and 10⁷ per mm², respectively, whereas the values are 20, 0.3 and 5×10⁷ per mm², respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single-crystalline growth of the ZnO nanowires along the [0 0 0 1] direction. Photosensitivity of the nanowires, grown on both top and bottom surface of the microchannel, was observed. However, the nanowires grown on bottom surface have shown better UV response with base line recovery at dark condition.     

Growth of nanowires from annealing SiBONC nanopowders

Silicon carbide (SiC) nanowires were prepared by the gas pressure annealing of SiBONC powders, which were synthesized by pyrolysis of a polymeric precursor. The yield, morphology and composition of the nanowires were influenced by the Si/B ratio in the original ceramic powders, annealing temperature and atmosphere. Annealing temperatures between 1500 and 1600 °C and Si/B molar ratios between 70:30 to 60:40 were suitable for growth of the nanowires. When annealing in an argon (Ar) atmosphere, the SiC nanowires contained little oxygen (O); and the diameters ranged from 20 to 200 nm. Then annealing in a nitrogen (N₂) atmosphere, the nanowires were thicker and rougher, and consisted of a relatively high level of nitrogen. Varied shapes and morphologies of the nanowires were observed for different synthesis conditions. The present novel method makes possible the large-scale fabrication of β-SiC nanowires.     

Novel route to scalable synthesis of II–VI semiconductor nanowires: Catalyst-assisted vacuum thermal evaporation

Vacuum thermal evaporation, a conventional film fabricating technique, has been explored to synthesize II–VI semiconductor nanowires based on a catalyst-assisted vapor–liquid–solid (VLS) process. Low melting-point metals, such as bismuth and tin, can be used as catalysts by co-evaporating with desired semiconductor materials. As proof of the concept, CdTe, CdS, ZnSe and ZnS single crystalline nanowires have been successfully synthesized on a large scale by this method. The growth mechanism involved in the method has been discussed. Morphological, structural and optical properties of as-synthesized nanowires were characterized, revealing the high quality of the nanowires. The results indicate that the method presented here is a novel and general route to mass production of II–VI semiconductor nanowires, which can be possibly scaled up for industrial application at low cost, and extended to other material systems.     

Specific features of formation and growth mechanism of multilayered quasi-one-dimensional (Co-Ni-Fe)/Cu systems in pores of anodic alumina matrices

A method for fabricating multilayered quasi-one-dimensional ferromagnet-diamagnet systems is described by the example of Co-Ni-Fe/Cu nanowires. The fabrication is implemented in a unified technological cycle from a combined electrolyte by pulsed potentiostatic electrodeposition. Regimes of the formation of layers of different systems, from pure ferromagnetic metals to alloys on their basis, are described. Mechanisms of nanowire growth are proposed. The distribution of chemical elements in the layers is investigated as a function of the electrolyte composition and the fabrication conditions. The nanowire microstructure is investigated by high-resolution scanning electron microscopy.     

Binary Ni–P bulk amorphous glass prepared by electrodeposition method

Compact and uniform bulk Ni–P binary amorphous alloys (BAAs) with thickness of up to 1 mm were prepared using electrodeposition method. This is the first finding that amorphous alloy can be obtained up to ‘bulk’ size not by rapid solidification but by electrochemical method. By improving the electrodeposition techniques, selecting proper plating solution, electrodeposition is probably a new method for preparing bulk amorphous alloys. The formation mechanism of the bulk amorphous was discussed within the concept of ‘disorder solid’.     

硅基AAO模板内电化学沉积ZnO纳米线及其光电性能研究

本文利用二次阳极氧化法在p型低阻〈100〉晶向的硅衬底上制备了AAO/Si,以硅基AAO为辅助模板,采用电化学沉积的方法以Zn(NO3).6H2O和HMT(C6H12N4)为原料,在80℃的水浴槽中制备了ZnO纳米线结构。采用SEM,XRD和拉曼光谱等手段对ZnO/AAO/Si复合结构进行表征。SEM图表明ZnO纳米线已成功组装到AAO/Si模板里,直径约45 nm,长度约为600 nm。XRD和拉曼光谱表明ZnO具有六角纤锌矿多晶结构。光致发光(PL)谱图表明ZnO/AAO/Si复合结构在565 nm附近有较宽黄绿发射峰,在395 nm附近有微弱的紫外发射峰。场发射测试结果表明,ZnO纳米线的场增强因子的β值为2490,场增强因子很高,具有广泛的应用前景。     

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal–organic vapor phase epitaxy, and the growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed.     

Controllable synthesis,characterization and optical properties of Ag@AgCl coaxial core‐shell nanocables

Core‐shell structures often exhibit improved physical and chemical properties. Developing a relatively general, facile, and low temperature synthetic approach for core‐shell structures with complex compositions is still a particularly challenging work. Here we report a general chemical conversion route to prepare high quality Ag@AgCl coaxial core‐shell nanocables via the redox reaction between Ag nanowires and FeCl₃ in solution. The powder X‐ray diffraction of the Ag@AgCl coaxial core‐shell nanocables shows additional diffraction peaks corresponding to AgCl crystals apart from the signals from the Ag nanowire cores. Scanning electron microscopy and transmission electron microscopy images of the Ag@AgCl coaxial core‐shell nanocables reveal that the Ag nanowires are coated with AgCl nanoparticles. The effect of the molar ratio of Fe:Ag on the morphology and optical absorption of the Ag@AgCl coaxial core‐shell nanocables is systematically investigated. The result shows that the optical absorption of Ag nanowires decreases gradually and that of AgCl nanoparticles improves gradually with the increase of the molar ratio of Fe:Ag. The formation process of the Ag@AgCl coaxial core‐shell nanocables has been discussed in detail. The present chemical conversion approach is expected to be employed in a broad range of applications to fabricate innovative core‐shell structures with different compositions and shapes for unique properties. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Catalyzed-assisted growth of well-aligned silicon oxide nanowires

Bulk quantity and ultra-long silicon oxide nanowires on micrometer-sized solid tin balls have been synthesized by typical chemical vapor deposition via a vapor–liquid–solid process. Low melting point tin droplets can be used as an effective catalyst for the large-scale growth of highly aligned silicon oxide nanowires. Observations using scanning electron microscopy indicate that numerous nanowires simultaneously nucleate, grow at nearly the same rate, and simultaneously stop growing. The silicon oxide nanowires have a uniform diameter distribution about 60 nm and are well-aligned. A model for the growth of silicon oxide nanowires on the surface of the tin balls was proposed. The Sn balls on the substrate come from the thermal evaporating SnCl₂ powders, and one of the reactants, Si, on the surface of a Sn ball come from the silicon wafer. Silicon reacts with oxygen to form silicon oxide nanowires on the surface of a liquid Sn ball.     

ZnO纳米线/纳米棒混合阵列的制备及其光致发光性能研究

使用无催化剂热蒸发法,在ZnO/Si薄膜衬底上制备了ZnO纳米线/纳米棒混合阵列.其中,纳米线的直径为10～20nm,纳米棒的直径为60～160 nn,二者混合在一起垂直生长于衬底表面.从衬底的上游到下游位置,混合,阵列中纳米线的含量逐渐下降,纳米棒逐渐增多.室温光致发光测试发现尺寸较小的纳米线阵列的紫外光发光强度比大尺寸纳米棒阵列高约5倍.持续激发光照射下,纳米线阵列的发光强度逐渐上升,停止光照后又逐渐下降到初始值,这可以用纳米线表面O2分子的解吸附和吸附过程来理解.