Uncooled infrared photodetectors in Poland

The history and present status of the middle and long wavelength Hg_1-xCd_xTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1–15 μm and 200–300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 59570K (2005).     

Near‐room‐temperature photon‐noise‐limited quantum well infrared photodetector

With the modern development of infrared laser sources such as broadly tunable quantum cascade lasers and frequency combs, applications of infrared laser spectroscopy are expected to become widespread. Consequently, convenient infrared detectors are needed, having properties such as fast response, high efficiency, and room‐temperature operation. This work investigated conditions to achieve near‐room‐temperature photon‐noise‐limited performance of quantum well infrared photodetectors (QWIPs), in particular the laser power requirement. Both model simulation and experimental verification were carried out. At 300 K, it is shown that the ideal performance can be reached for typical QWIP designs up to a detection wavelength of 10 µm. At 250 K, which is easily reachable with a thermoelectric Peltier cooler, the ideal performance can be reached up to 12 µm. QWIPs are therefore suitable for detection and sensing applications with devices operating up to or near room temperature.     

Quantum structures for multiband photon detection

The work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum dots-in-a-well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunnelling quantum dot infrared photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunnelling, while the dark current is blocked by AlGaAs/InGaAs tunnelling barriers placed in the structure. A two-colour infrared detector with photoresponse peaks at ∼6 and ∼17 μm at room temperature will be discussed. A homojunction or heterojunction interfacial workfunction internal photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 59570W (2005).     

Extending absorption of near-infrared wavelength range for high efficiency CIGS solar cell via adjusting energy band

The efficient photon harvesting in near infrared wavelength range is still a challenging problem for high performance Cu(In_1-x, Ga_x)Se₂ (CIGS) solar cell. Herein, adjusting the energy band distribution of CIGS solar cell could provide significant academic guidance for devices with superior output electric power. To understand the role of each functional layer, the optimal 3000 nm CIGS absorber layer with 1.3 eV bandgap and 30 nm CdS buffer layer were firstly obtained via simulating the uniform band-gap structures. By introducing CIGS absorber layer with a double grading Ga/(Ga+In) profile, the power conversion efficiency of the double gradient band gap cell is superior to that of uniform band-gap cell through extending absorption of near-infrared wavelength range. Upon optimization, the best power conversion efficiency of CIGS with a double gradient band gap solar cell is improved significantly to 24.90%, among the best values reported in literatures, which is an 8.17% relative increase compared with that of the uniform band-gap cell. Our findings provide a theoretical guide toward the design of high performance solar cells and enrich the understandings of the energy band engineering for developing of novel semiconductor devices.     

Photocurrent spectra for above and below bandgap energies from photovoltaic PbS infrared detectors with graphene transparent electrodes

We discussed photocurrent spectra of photovoltaic PbS infrared detectors using multi-layer graphene as transparent electrode, where p-PbS films were deposited on TiO₂/FTO substrates by chemical bath deposition. In the photocurrent spectra, we observed both above-bandgap and sub-bandgap photocurrent without any external bias. We discussed impurity band model and grain boundary model in order to explain the sub-bandgap photocurrent near 15 μm. Since FTO is transparent in the visible range, we were able to illuminate green laser beam from the FTO back-side, and photo-response up to 50 μm was found to be enhanced. This long wavelength photo-response was attributed to the excitation of the photo-electrons accumulated at the TiO₂/PbS interface. Our photovoltaic PbS devices can detect not only short-infrared but also terahertz radiation at room temperature, which is highly applicable to various fields.     

Correlation between structure and photoluminescence in amorphous hydrogenated silicon nitride alloys

As-deposited a-SiN_x:H (0.1<x<0.9) thin films prepared by evaporation of silicon under a flow of nitrogen and hydrogen ions exhibit visible photoluminescence at room temperature without any posttreatment. The nitrogen concentration was determined by X-ray photoemission spectroscopy. The structural characterization was performed with Fourier transform infrared absorption spectroscopy. The optical gap was obtained from transmission measurements in the ultraviolet–visible–near infrared range. These studies were correlated to the evolution of the photoluminescence properties.     

Investigation on optical transmission spectra of (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals

The optical transmission spectra from 0.3 to 11 μm of relaxor ferroelectric single crystals (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) were systematically studied at room temperature in this paper. The crystal is transparent between 0.45 and 5.5 μm and becomes completely absorbing around 0.4 μm in near UV region and 10 μm in infrared region. But the wavelength cutoff in near UV is much sharper than the long wavelength cutoff. As compared with other configurations, tetragonal single crystals possess the optimal transmission properties. The optical transmittance in the wavelength region from 0.45 to 5.5 μm is about 70%. The results show that tetragonal PMN-xPT single crystals are promising for a wide range of optical applications. Some discussions about the oxygen-octahedra structure that determines the basic energy level of the crystals are also presented on the optical properties of PMN-xPT single crystals.     

HOT infrared photodetectors

At present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection. Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector. In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered — HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.     

Implementation of a novel low‐noise InGaAs detector enabling rapid near‐infrared multichannel Raman spectroscopy of pigmented biological samples

Pigmented tissues are inaccessible to Raman spectroscopy using visible laser light because of the high level of laser‐induced tissue fluorescence. The fluorescence contribution to the acquired Raman signal can be reduced by using an excitation wavelength in the near infrared range around 1000 nm. This will shift the Raman spectrum above 1100 nm, which is the principal upper detection limit for silicon‐based CCD detectors. For wavelengths above 1100 nm indium gallium arsenide detectors can be used. However, InGaAs detectors have not yet demonstrated satisfactory noise level characteristics for demanding Raman applications. We have tested and implemented for the first time a novel sensitive InGaAs imaging camera with extremely low readout noise for multichannel Raman spectroscopy in the short‐wave infrared (SWIR) region. The effective readout noise of two electrons is comparable to that of high quality CCDs and two orders of magnitude lower than that of other commercially available InGaAs detector arrays. With an in‐house built Raman system we demonstrate detection of shot‐noise limited high quality Raman spectra of pigmented samples in the high wavenumber region, whereas a more traditional excitation laser wavelength (671 nm) could not generate a useful Raman signal because of high fluorescence. Our Raman instrument makes it possible to substantially decrease fluorescence background and to obtain high quality Raman spectra from pigmented biological samples in integration times well below 20 s. Copyright © 2015 John Wiley & Sons, Ltd.     

High-performance IR detectors at SCD present and future

For over 27 years, SCD has been manufacturing and developing a wide range of high performance infrared detectors, designed to operate in either the mid-wave (MWIR) or the long-wave (LWIR) atmospheric windows. These detectors have been integrated successfully into many different types of system including missile seekers, time delay integration scanning systems, hand-held cameras, missile warning systems and many others. SCD’s technology for the MWIR wavelength range is based on its well established 2D arrays of InSb photodiodes. The arrays are flip-chip bonded to SCD’s analogue or digital signal processors, all of which have been designed in-house. The 2D focal plane array (FPA) detectors have a format of 320×256 elements for a 30-μm pitch and 480×384 or 640×512 elements for a 20-μm pitch. Typical operating temperatures are around 77–85 K. Five years ago SCD began to develop a new generation of MWIR detectors based on the epitaxial growth of antimonide based compound semiconductors (ABCS). This ABCS technology allows band-gap engineering of the detection material which enables higher operating temperatures and multi-spectral detection. This year SCD presented its first prototype FPA from this program, an InAlSb based detector operating at a temperature of 100 K. By the end of this year SCD will introduce the first prototype MWIR detector with a 640×512 element format and a pitch of 15 μm. For the LWIR wavelength range SCD manufactures both linear Hg_1−xCd_xTe (MCT) detectors with a line of 250 elements and time delay and integration (TDI) detectors with formats of 288×4 and 480×6. Recently, SCD has demonstrated its first prototype uncooled detector which is based on VO_x technology and which has a format of 384×288 elements, a pitch of 25 μm, and a typical NETD of 50 mK at F/1. In this paper, we describe the present technologies and products of SCD and the future evolution of our detectors for the MWIR and LWIR detection. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 59570S (2005).     

The refractive index dispersion of Hg1−xCdxTe by infrared spectroscopic ellipsometry

The refractive indices of Hg_1−xCd_xTe (x=0.276, 0.309, and 0.378) bulk samples in the region below, in, and above the fundamental band gap have been measured by infrared spectroscopic ellipsometry at room temperature. A refractive index peak, in which the corresponding energy equals approximately the band gap energy, is observed for each refractive index spectrum with different compositions. Above the band gap, the refractive index drops quickly near the gap, then decreases slowly as photon energy increases. The refractive index n above the band gap is found to follow the Sellmeier dispersion relationship n²(λ)=A+B/λ²+C/λ⁴+D/λ⁶ as a function of the wavelength of light λ.     

Barrier infrared detectors

In 1959, Lawson and co-workers publication triggered development of variable band gap Hg_1?xCd_xTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures. In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.     

Single photon frequency up-conversion and its applications

Optical frequency up-conversion is a technique, based on sum frequency generation in a non-linear optical medium, in which signal light from one frequency (wavelength) is converted to another frequency. By using this technique, near infrared light can be converted to light in the visible or near visible range and therefore detected by commercially available visible detectors with high efficiency and low noise. The National Institute of Standards and Technology (NIST) has adapted the frequency up-conversion technique to develop highly efficient and sensitive single photon detectors and a spectrometer for use at telecommunication wavelengths. The NIST team used these single photon up-conversion detectors and spectrometer in a variety of pioneering research projects including the implementation of a quantum key distribution system; the demonstration of a detector with a temporal resolution beyond the jitter limitation of commercial single photon detectors; the characterization of an entangled photon pair source, including a direct spectrum measurement for photons generated in spontaneous parametric down-conversion; the characterization of single photons from quantum dots including the measurement of carrier lifetime with escalated high accuracy and the demonstration of the converted quantum dot photons preserving their non-classical features; the observation of 2nd, 3rd and 4th order temporal correlations of near infrared single photons from coherent and pseudo-thermal sources following frequency up-conversion; a study on the time-resolving measurement capability of the detectors using a short pulse pump and; evaluating the modulation of a single photon wave packet for better interfacing of independent sources. In this article, we will present an overview of the frequency up-conversion technique, introduce its applications in quantum information systems and discuss its unique features and prospects for the future.     

Exploring novel methods to achieve sensitivity limits for high operating temperature infrared detectors

A review of high operating temperature (HOT) infrared (IR) photon detector technology vis-a-vis material requirements, device design and state of the art achieved is presented in this article. The HOT photon detector concept offers the promise of operation at temperatures above 120 K to near room temperature. Advantages are reduction in system size, weight, cost and increase in system reliability. A theoretical study of the thermal generation–recombination (g–r) processes such as Auger and defect related Shockley Read Hall (SRH) recombination responsible for increasing dark current in HgCdTe detectors is presented. Results of theoretical analysis are used to evaluate performance of long wavelength (LW) and mid wavelength (MW) IR detectors at high operating temperatures.     

Optical investigation of the quasi two-dimensional monophosphate tungsten bronzes K x P 4 W 8 O 32 (x = 0 - 1.57)

The potassium doped monophosphate tungsten bronzes K_xP₄W₈O₃₂ are two-dimensional metals which show a metal-to-metal transition at a critical temperature which depends on the doping level. The metal-to-metal transition is accompanied by the formation of a commensurate charge density wave with wave vector (π/b,0) which is independent of the doping level. Undoped P₄W₈O₃₂, on the other hand, has two metal-to-metal transitions which are connected to the formation of incommensurate charge density waves. We measured the infrared reflectivity of the series K_xP₄W₈O₃₂ (x = 0 - 1.57) in the spectral range from 100 to 10 000 cm^-1 for room temperature and well below the critical temperature. Polarization-dependent infrared spectra find a two-dimensional behavior in the normal and the charge density wave state and show signatures of hybridization between one- and two-dimensional conduction bands. In undoped P₄W₈O₃₂ the essentials of the charge density wave state can be understood from the nesting vectors of the calculated Fermi surface and two gaps are observed in the infrared spectra. The gap sizes are a factor of about 2.5 bigger than the predictions from mean-field theory in the weak-coupling limit which suggests medium- or strong electron-phonon coupling. For potassium doped K_xP₄W₈O₃₂ one gap is observed in the charge density wave state. The energetics of the charge density formation may be dominated by the energy required for the lattice modulation. Received 27 April 2001 and Received in final form 21 September 2001     

Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry

In this paper, we give an overview of quantum cascade detector technology for the near- and mid-infrared wavelength range. Thanks to their photovoltaic operating principle, the most advanced quantum cascade detectors offer great opportunities in terms of high detection speed, reliable room temperature operation, and excellent Johnson noise limited detectivity. Besides some important features dealing with their fabrication and their general characteristics, we will also briefly present some possibilities for performance improvement. Elementary theoretical considerations adopted from photoconductive detectors confirm that optimization of such devices always involves various trade-offs.     

A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect

Strongly correlated electronic (SCE) materials including high-temperature superconducting cuprate and colossal magnetoresistance manganite thin films demonstrate tremendous anisotropic Seebeck effect which makes them very promising for developing high-performance laser detectors. In this work, laser-induced thermoelectric voltage (LITV) signals with nanosecond response time have been measured in SCE La_1?x Pb _x MnO₃ thin films based on anisotropic Seebeck effect at room temperature. The magnitude of the LITV signals increases linearly with laser energy/power density in a wide range of laser wavelengths from ultraviolet, visible to infrared based on which a novel SCE thin-film laser energy/power meter has been developed.     

Stable monolayer of the RuO2 structure by the Peierls distortion

In this paper, we presented a stable two-dimensional ruthenium dioxide monolayer by using first-principles calculations within density functional theory. In contrast to ordinary hexagonal and octahedral structures of metal dichalcogenides, RuO₂ is stable in the distorted phase of the structure as a result of occurring charge density wave. A comprehensive analysis including the calculation of vibration frequencies, mechanical properties, and ab initio molecular dynamics at 300?K affirms that RuO₂ monolayer structure is stable dynamically and thermally and convenient for applications at room temperature. We also investigated the electronic and optical properties of RuO₂ and it is found that RuO₂ has of 0.74?eV band gap which is in the infrared region and very suitable for infrared detectors.     

Enhancement of the power factor of Pb1–xSnxTe (0.00 ≥ x ≥ 0.08) alloys

Thermoelectric properties of Pb_1–x Sn _x Te (0.00 ≥ x ≥ 0.08) alloys synthesized by melting-quenching-annealing method have been investigated. The sample structure and phases have been investigated by Raman spectroscopy and X-ray diffraction, while the morphology and stoichiometry have been studied by SEM and EDX. The nanomaterial exists in a single phase and has a face-centred cubic (fcc) lattice of rock-salt type in the whole range of x values in Pb_1–x Sn _x Te alloys. The effect of tin substitution on the lattice vibration and chemical bonding nature in the lead telluride has been investigated by Raman spectroscopy at room temperature. The Seebeck coefficient and electrical resistivity have been measured in the temperature range of 100–400 K. The electrical resistivity measurements reveal that the compounds have extrinsic to intrinsic conduction transition and the electrical temperature transition shifts to higher values with increasing the Sn content. For all studied compounds, the Seebeck coefficient is positive indicating predomination of positive charge carriers over the entire temperature range. The thermoelectric power factor was enhanced to 2.03 mWm^?1 K^?2 for the sample with 4% Sn content at room temperature.     

Heterostructure infrared photovoltaic detectors

HgCdTe remains the most important material for infrared (IR) photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, GaAs/AlGaAs multiple quantum wells, InAs/GaInSb strained layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter which is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapour phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication of almost ideally designed heterojunction photodiodes. In this paper, examples of novel devices based on heterostructures operating in the long wavelength, middle wavelength and short wavelength spectral ranges are presented. Recently, more interest has been focused on p–n junction heterostructures. As infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. HgCdTe heterojunction detectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolour capability in these regions. Recent progress in two-colour HgCdTe detectors is also reviewed.