Study of in-situ surface cleaning for Si and SiGe epitaxy on Si with a novel ion beam vapor/assisted deposition technique

Ion beam vapor deposition is a new technique to grow Si and SiGe layers on Si substrates at low temperatures. The in situ surface cleaning prior to the deposition is a crucial step in the epitaxial growth of Si and SiGe films and is achieved by Ar ion bombardment with substrates kept at ambient temperature. A high temperature annealing (800 °C) is needed to repair the damage caused by this bombardment. We studied the effects of ion beam energy and the substrate temperature during the in situ cleaning on the quality of the grown films. An ion beam energy of 150–200eV is found to be sufficient to clean the surface for epitaxial growth. While the films deposited on properly cleaned surfaces are epitaxially grown, the inadequately cleaned surface leads to the formation of polycrystalline layers especially at low substrate temperatures.     

以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究

采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.     

Epitaxial growth of single-crystalline Al(2)O(3) films on Cr(2)O(3)(0001)

Thin, crystallographically oriented single-crystalline Al2O3 films can be grown epitaxially on Cr2O3(0001) by codeposition of Al vapor and O2 at a substrate temperature of 825 K. The properties and growth of these films were monitored by Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), low-energy ion scattering (LEIS), and X-ray photoelectron spectroscopy (XPS). Two routes of preparation were investigated: (i) stepwise growth by alternating deposition of Al at room temperature and subsequent exposure to O2 at elevated temperatures; (ii) codeposition of Al and O2 at T > 800 K. The first route was consistently found to result in the growth of a complex interfacial oxide followed by the growth of polycrystalline Al2O3. The second mode of preparation provided homogeneous and ordered, probably (0001)-oriented, films of Al2O3 that maintained a LEED pattern up to a thickness around 10 A. The surface sensitive Cr MVV Auger transition at 34 eV was completely attenuated once the Al2O3 layer had reached a thickness of 6 A, pointing to film homogeneity at an early stage. This was confirmed by the absence of a significant Cr signal in LEIS spectra.     

Mobility enhanced photoactivity in sol-gel grown epitaxial anatase TiO2 films

Epitaxial anatase thin films were grown on single-crystal LaAlO3 substrates by a sol-gel process. The epitaxial relationship between TiO2 and LaAlO3 was found to be [100]TiO2||[100]LaAlO3 and (001)TiO2||(001)LaAlO3 based on X-ray diffraction and a high-resolution transmission electron microscopy. The epitaxial anatase films show significantly improved photocatalytic properties, compared with polycrystalline anatase film on fused silica substrate. The increase in the photocatalytic activity of epitaxial anatase films is explained by enhanced charge carrier mobility, which is traced to the decreased grain boundary density in the epitaxial anatase film.     

Growth modes of organic semiconductor thin films using organic molecular beam deposition: epitaxy,van der Waals epitaxy,and quasi-epirtaxy

We compare the ultrahigh vacuum growth of several different archetype organic molecular compounds on a variety of substrates, and find that the resulting thin films can form epitaxial, van der Waals epitaxial (vdWE) or quasi-epitaxial (QE) structures. Epitaxial and vdWE films form lattices commensurate with that of the substrate, where epitaxy refers to chemisorbed films while vdWE refers to purely vdW-bonded, physisorbed films. In contrast, QE films are incommensurate with the substrate lattice. In spite of this incommensurability, QE films can exhibit long range order, and have a unique orientational relationship with the substrate lattice. Quasi-epitaxial growth can result in strained structures, where the strain energy is relieved by variations in the internal lattice degrees of freedom. It has been found that QE growth can thus result in stable, quasi-equilibrium film structures which are different than the bulk structure of that same material. Organic thin films such as the phthalocyanines, 3,4,9,10-perylenetetracar☐ylic dianhydride, and the fullerenes grown on graphite, alkali halide crystals, Au, semiconductors and other substrates are all discussed.     

Epitaxial film growth and superconducting behavior of sodium-cobalt oxyhydrate, NaxCoO2.yH2O (x approximately 0.3, y approximately 1.3)

We have developed a unique multistep film growth technique, combining reactive solid-phase epitaxy (R-SPE) with an intercalation process, to fabricate epitaxial films of superconducting sodium-cobalt oxyhydrate, Na(0.3)CoO2.1.3H2O. An epitaxial film of Na(0.8)CoO2 grown on an alpha-Al2O3(0001) substrate by R-SPE was subjected to oxidation and hydration treatment, leading to the formation of a Na(0.3)CoO2.1.3H2O epitaxial film. The film exhibited metallic electrical resistivity with a superconducting transition at 4 K, similar to that of bulk single crystals. The present technique is suitable and probably the only method for the epitaxial growth of superconducting Na(0.3)CoO2.1.3H2O.     

Interaction of Al2O3 and CeO2 surfaces with SO2 and SO2 + O2 studied by X-ray photoelectron spectroscopy

The interaction of Al2O3 and CeO2 thin films with sulfur dioxide (2.5 mbar) or with mixtures of SO2 with O2 (5 mbar) at various temperatures (30-400 degrees C) was studied by X-ray photoelectron spectroscopy (XPS). The analysis of temperature-induced transformations of S2p spectra allowed us to identify sulfite and sulfate species and determine the conditions of their formation on the oxide surfaces. Sulfite ions, SO3(2-), which are characterized by the S2p(3/2) binding energy (BE) of approximately 167.5 eV, were shown to be formed during the interaction of the oxide films with pure SO2 at temperatures < or =200 degrees C, whereas sulfate ions, SO4(2-), with BE (S2p(3/2)) approximately 169 eV were produced at temperatures > or =300 degrees C. The formation of both the sulfite and sulfate species proceeds more efficiently in the case of CeO2. The addition of oxygen to SO2 suppresses the formation of the sulfite species on both oxides and facilitates the formation of the sulfate species. Again, this enhancement is more significant for the CeO2 film than for the Al2O3 one. The sulfation of the CeO2 film is accompanied by a reduction of Ce(IV) ions to Ce(III) ones, both in the absence and in the presence of oxygen. It has been concluded that the amount of the sulfates on the CeO2 surface treated with the SO2 + O2 mixture at > or =300 degrees C corresponds to the formation of a 3D phase of the Ce(III) sulfate. The sulfation of Al2O3 is limited by the surface of the oxide film.     

Control of moisture at buried polymer/alumina interfaces through substrate surface modification

Moisture absorption in poly(4-tert-butoxycarbonyloxystyrene) (PBOCSt) films supported on Al(2)O(3) sputter coated silicon wafers is measured using neutron and X-ray reflectivity. Accumulation of water at the interface during moisture exposure results in an apparent film-thickness-dependent swelling for ultrathin PBOCSt films. The swelling of a film on Al(2)O(3) is less than the swelling of a film of the same thickness on SiO(x) for films thinner than 20 nm. This is due to comparatively less moisture accumulation at the Al(2)O(3)/PBOCSt interface. A simple, zero adjustable parameter model consisting of a fixed water-rich layer at the interface and bulk swelling through the remainder of the film describes the thickness-dependent swelling quantitatively. The influence of four different Al(2)O(3) surface treatments on the moisture distribution within PBOCSt films was examined: bare Al(2)O(3), tert-butylphosphonic acid, phenylphosphonic acid, and n-octyltrichlorosilane. Both the phenyl and the octyl surface treatments reduce the accumulation of water at the polymer/substrate interface. The tert-butyl treatment does not reduce the interfacial water concentration, presumably due to insufficient surface coverage.     

载体对Rh基催化剂上甲烷解离活性的影响

采用脉冲反应技术、原位CO吸附和吡啶吸附红外光谱,考察了Al2O3和SiO2负载的Rh基催化剂上Rh-CeO2相互作用和CH4解离活性.结果表明,载体酸性对Rh-CeO2相互作用有显著影响.Rh/Al2O3催化剂中添加CeO2增加了载体Al2O3的Lewis酸位,使Al2O3接受电子的能力增强,从而降低Rh的电子密度,有利于CH4解离活化.相反,Rh/SiO2催化剂中添加CeO2减少了载体SiO2的Lewis酸位和酸强度,使SiO2难于接受电子,导致Rh的电子密度增加,不利于CH4解离活化.     

Epitaxial superconducting δ-MoN films grown by a chemical solution method

The synthesis of pure δ-MoN with desired superconducting properties usually requires extreme conditions, such as high temperature and high pressure, which hinders its fundamental studies and applications. Herein, by using a chemical solution method, epitaxial δ-MoN thin films have been grown on c-cut Al(2)O(3) substrates at a temperature lower than 900 °C and an ambient pressure. The films are phase pure and show a T(c) of 13.0 K with a sharp transition. In addition, the films show a high critical field and excellent current carrying capabilities, which further prove the superior quality of these chemically prepared epitaxial thin films.     

Decomposition of hydrogen peroxide at water-ceramic oxide interfaces

The thermal decomposition of hydrogen peroxide, H(2)O(2), was determined in aqueous suspensions of SiO(2), Al(2)O(3), TiO(2), CeO(2), and ZrO(2) nanometer-sized particles. First-order kinetics were observed for the decomposition in all cases. Temperature dependence studies found that the activation energy was 42 +/- 5 kJ/mol for the overall decomposition of H(2)O(2) independent of the type of oxide. Oxide type had a strong effect on the pre-exponential rate term with increasing rate in the order of SiO(2) < Al(2)O(3) < TiO(2) < CeO(2) < ZrO(2). The rate coefficient for H(2)O(2) decomposition increases with increasing surface area of the oxide, but the number or efficiency of reactive sites rather than the total surface area may have the dominant role. Very efficient scavengers for OH radicals in the bulk liquid are not able to prevent formation of molecular oxygen, the main H(2)O(2) gaseous decay product, suggesting that decomposition occurs on the oxide surfaces. The decomposition of H(2)O(2) in the gamma-radiolysis of water is enhanced by the addition of ceramic oxides, possibly due to excess formation of hydrated electrons from energy deposited in the solid.     

纳米CeO2基固溶体催化柴油机碳颗粒物燃烧性能

采用柠檬酸溶胶鄄凝胶法制备CeO2基固溶体催化剂(Ce0.7Zr0.3O2-δ、Ce0.7Pr0.3O2-δ和Ce0.7Gd0.3O2-δ), 并考察了固溶体和三种常用载体(TiO2、SiO2和Al2O3)及其负载KNO3后的催化碳黑燃烧活性. 结果表明, CeO2基固溶体催化剂具有很高的催化燃烧活性, 其活性接近TiO2、SiO2和Al2O3负载30%KNO3催化剂的活性. 因为纳米CeO2基固溶体的形成, 提高了催化剂的抗烧结能力, 使氧更活泼, 从而提高氧化还原性能, 有利于碳颗粒燃烧. 由于CeO2基固溶体本身的高活性, 因此KNO3的添加不能明显提高CeO2基固溶体催化剂(尤其是Ce0.7Zr0.3O2-δ和Ce0.7Pr0.3O2-δ)的催化燃烧活性, 但KNO3能显著提高TiO2, SiO2和Al2O3的催化燃烧活性.     

金属-载体相互作用对CH4/CO2重整反应中Rh基催化剂抗积炭性能的影响

考察了Rh/Al2O3,Rh/SiO2和Rh/CeO2催化剂上金属-载体间相互作用对CH4/CO2重整反应抗积炭性能的影响,并与反应前后催化剂的程序升温还原和程序升温氧化(TPO)测试结果相关联.实验发现,Rh与Al2O3和SiO2载体间的相互作用越强,催化剂还原后Rh的分散度越高,晶粒越小,高分散的Rh表面生成的碳物种CHx越多,其作为活泼的反应中间体越易与CO2反应生成CO和H2.而游离态的Rh还原后晶粒较大,生成的碳物种与CO2反应能力较低,从而导致催化剂失活.TPO和CO2脉冲实验结果表明,反应过程中Rh/CeO2催化剂上反应生成的CHx物种比Rh/Al2O3和Rh/SiO2上的CHx物种更活泼.同时由于Rh-CeO2间独特的相互作用,部分CeO2还原后生成CeO2-x和氧空位,促进CO2分子的活化解离,导致生成的表面氧容易与CHx反应,从而抑制催化剂积炭.     

Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

IntroductionZnOis one of the most promising materials for pro-ducing ultraviolet laser at room temperature because ofits wide direct band gap(Eg=3.37eV)and large ex-citonic binding energy of60meV.Recently,much at-tention has been paid to short-wavelength …     

Epitaxial growth of AlN films on single-crystalline Ta substrates

We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta(100) and (111) substrates have exhibited quite poor crystallinity, an epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112¯0]//Ta[001] has been obtained on a Ta(110) substrate at a growth temperature of 450 °C. We found that the full-width at half-maximum values for the crystal orientation distribution in the tilt and twist directions of the AlN film were 0.37° and 0.41°, respectively. Grazing-incidence X-ray reflection (GIXR) and X-ray photoelectron spectroscopy (XPS) measurements have revealed that the AlN/Ta heterointerface is quite abrupt, and that its abruptness remains unchanged even after annealing at 1000 °C.     

Probing water interactions and vacancy production on gadolinia-doped ceria surfaces using electron stimulated desorption

Polycrystalline gadolinia-doped ceria (GDC) surfaces were studied using low-energy (5-400 eV) electron stimulated desorption (ESD). H(+), O(+), and H(3)O(+) were the primary cationic desorption products with H(+) as the dominant channel. H(+), H(3)O(+), and O(+) have a 22 eV threshold followed by a yield change around 40 eV. H(+) also has an additional yield change approximately 75 eV and O(+) has an additional change approximately 150 eV. The O(+) ESD yield change approximately 150 eV may indicate bond breaking of Gd-O and the involvement of oxygen vacancies. The H(+) and H(3)O(+) threshold data collectively indicate the presence of hydroxyl groups and chemisorbed water molecules on the GDC surfaces. ESD temperature dependence measurements show that the interaction of water with GDC surface defect sites, mainly oxygen vacancies, influences the desorption of H(+), O(+), and H(3)O(+). The temperature dependence of the O(+) ESD at 400 eV incident electron energy yields a 0.21 eV activation energy. This is close to the energy needed for oxygen vacancy production next to a pair of Ce(3+) on a CeO(2) surface. These results may indicate a correlation between the O(+) ESD yield and oxygen vacancy density on GDC surfaces and a potential correlation of O(+) ESD and GDC ionic conductivity.     

Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology

CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM, and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (epsilon2). Looking at the epsilon2 curves, it can be seen that by increasing the film structural order, a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films.     

电子功能外延薄膜的电沉积

电沉积作为一种在温和条件下从溶液中合成材料的技术已被广泛应用于在导体和半导体基底表面合成各种功能材料。电沉积一般由人为施加于基底的电刺激（如：施加电位/电流）来触发。这种电刺激通过氧化或还原靠近基底表面的溶液层内部的离子、 分子或配合物从而使该溶液层偏离其热力学平衡状态,随后引起目标产物在基底表面的沉积。在电沉积过程中, 许多实验参数都可能从不同的方面对沉积物的物化性质造成影响。迄今为止,已通过电沉积制备出多种单质（包括金属和非金属单质）、 化合物（例如：金属氧化物、金属氢氧化物、 金属硫化物等）以及复合材料。电沉积制备的这些材料大多为多晶、 织构或外延薄膜的形式。其中, 外延薄膜是一种具有特定的面外和面内晶体生长取向且其晶体取向受基底控制的类单晶薄膜。由于外延薄膜中高度有序的原子排列,它们常呈现出独特的电磁性质。本文总结了常见的电沉积合成路线及影响沉积物外延生长的关键实验因素。此外, 本文简要介绍了用于表征外延薄膜的技术。最后, 本文还讨论了一些采用电沉积制备的具有特殊电子、 电磁及光电特性的功能外延薄膜。     

助剂对超细CuO－ZnO－SiO_2催化剂性质和CO_2加氢反应性能的影响

研究了９种助剂对用于ＣＯ２加氢反应的超细ＣｕＯ－ＺｎＯ－ＳｉＯ２催化剂性能的影响，并进行了ＸＲＤ和ＴＰＲ表征．结果表明，助剂影响超细催化剂的性质和催化性能，ＴｉＯ２、ＣｅＯ２、ＭｇＯ和Ｌａ２Ｏ３是ＣＯ２加氢合成甲醇的超细ＣｕＯ－ＺｎＯ－ＳｉＯ２催化剂体系的优良助剂．在含有不同助剂的ＣｕＯ－ＺｎＯ－ＳｉＯ２催化剂体系内存在ＣｕＯ和ＺｎＯ晶相，但除ＣｅＯ２以外，其它的助剂都可能以微晶或无定型的形式存在．ＴＰＲ研究表明，添加的助剂除ＣｅＯ２以外，都使超细ＣｕＯ－ＺｎＯ－ＳｉＯ２催化剂的还原温度提高，而且助剂对ＣｕＯ－ＺｎＯ－ＳｉＯ２催化剂活性的影响，按照助剂对ＣｕＯ－ＺｎＯ－ＳｉＯ２催化剂还原温度的影响进行了探讨     

Control of the morphology of oxide nano-islands through the substrate miscut angle

An experimental method is presented that allows to control the morphology of sol–gel grown epitaxial thin films. Thin films of yttria stabilized zirconia (YSZ) have been grown on two c-cut sapphire substrates by sol–gel dip-coating and epitaxial nano-islands have been formed by high temperature thermal treatment. Atomic force microscopy observations and X-ray diffraction reciprocal space mapping were used to investigate the effects of a step-like structure of the wafer surface on the morphology and on the out-of-plane orientation of epitaxial nano-islands. In all cases investigated the (002) planes of YSZ remained parallel to the (0001) planes of sapphire, but tilted by an amount depending on both the out-of-plane lattice mismatch and miscut angle.