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CMOS图像传感器(CIS)在空间辐射或核辐射环境中应用时,均会受到总剂量辐照损伤的影响,严重时甚至导致器件功能失效.文章从微米、超深亚微米到纳米尺度的不同CIS生产工艺、从3T PD(Photodiode)到4T PPD(Pinned Photodiode)的不同CIS像元结构、从局部氧化物隔离技术(LOCOS)到浅槽隔离(STI)的不同CIS隔离氧化层等方面,综述了CIS总剂量辐照效应研究进展.从CIS器件工艺结构、工作模式和读出电路加固设计等方面简要介绍了CIS抗辐射加固技术研究进展.分析总结了目前CIS总剂量辐照效应及加固技术研究中亟待解决的关键技术问题,为今后深入开展相关研究提供理论指导. 相似文献
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本文分析了星载通信电子侦察设备的空间辐射环境及总剂量辐射效应,阐述了抗总剂量辐射效应的设计流程及设计思路,并提出了一些结构防护与设计方法。 相似文献
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随着芯片集成度的提高,器件加固技术的难度越来越大,加固技术出现激烈竞争。本文扼要介绍几种较好的加固技术的近期发展动态,技术水平以及部分典型加固产品的抗辐射能力。 相似文献
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X射线直接成像的CMOS图像传感器由于工作在X射线辐射下,其内部器件会因为辐射效应引起性能恶化,因此需要对器件进行抗辐射加固并研究辐射对器件参数的影响。辐射导致的氧化物陷阱电荷及界面陷阱电荷受到栅氧厚度、偏置电压大小、辐射总剂量以及剂量率等多种因素影响。设计了n型场效应晶体管辐射加固结构版图,用0.5μm CMOS工艺流片,并进行了30 kGy(Si)的总剂量辐照效应实验。实验结果显示,所设计的n型场效应晶体管在辐射之后漏电流有所增加、跨导减小、阈值电压向负向漂移;辐射加固晶体管在漏电流性能上较未加固晶体管更好,在跨导改变和阈值电压漂移上未能表现出其更优的性能。 相似文献
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微电子器件的抗辐射加固技术 总被引:1,自引:0,他引:1
对各类微电子材料的抗辐射特性进行了分析 ,对 Si双极器件和 Si CMOS器件、 Ga As微波功率器件、新兴光电器件—— VCSEL、 LED以及 MEMS的抗辐射加固技术进行了探讨 ,对几种空间单粒子效应 (SEE)进行了研究 相似文献
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闫旭亮孟丽娅袁祥辉黄友恕吕果林 《半导体技术》2014,(11):861-866
X射线直接成像的CMOS图像传感器由于工作在X射线辐射下,其内部器件会因为辐射效应引起性能恶化,因此需要对器件进行抗辐射加固并研究辐射对器件参数的影响。辐射导致的氧化物陷阱电荷及界面陷阱电荷受到栅氧厚度、偏置电压大小、辐射总剂量以及剂量率等多种因素影响。设计了n型场效应晶体管辐射加固结构版图,用0.5μm CMOS工艺流片,并进行了30 kGy(Si)的总剂量辐照效应实验。实验结果显示,所设计的n型场效应晶体管在辐射之后漏电流有所增加、跨导减小、阈值电压向负向漂移;辐射加固晶体管在漏电流性能上较未加固晶体管更好,在跨导改变和阈值电压漂移上未能表现出其更优的性能。 相似文献
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介绍了一种16位D/A转换器抗辐射加固设计和工艺技术。主要从系统结构加固设计、关键单元加固设计和工艺加固技术等方面进行了阐述;重点对BiCMOS加固工艺的器件结构设计原理进行了详细阐述,给出了器件仿真数据和实验结果;最后,对辐照试验进行了分析。采用该加固工艺研制的16位D/A转换器实现了转换速率大于30 MSPS,建立时间小于50 ns,线性误差和微分误差均小于±8 LSB等性能指标;其抗中子辐射水平为5×1013n/cm2,抗γ总剂量辐射水平达5.0×103Gy(Si)。 相似文献
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Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is simulated and demonstrated with a -150 V P-channel VDMOS. The results show that the peak current density is reduced from 5.51 × 10^3 A/cm^2 to 2.01 × 10^3 A/cm^2, and the changed value of the breakdown voltage is 2.5 V at 500 krad(Si). Especially, using 60Co and X-ray to validate the results, which strictly match with the simulated values, there is not any added mask or process to fabricate the novel structure, of which the process is compatible with common P-channel VDMOS processes. The novel terminal structure can be widely used in total irradiation hardened P-channel VDMOS design and fabrication, which holds a great potential application in the space irradiation environment. 相似文献
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Gusarov A.I. Berghmans F. Deparis O. Fernandez A.F. Defosse Y. Megret P. Decreton M. Blondel M. 《Photonics Technology Letters, IEEE》1999,11(9):1159-1161
Fiber Bragg gratings (FBGs) written in a 10 mol.% Ge-doped core silica fiber using a phase mask were exposed to γ-radiation. The transmission and reflection spectra were recorded during irradiation up to doses in excess of 1 MGy. There was no detectable change of the Bragg peak amplitude and the grating temperature sensitivity. The radiation-induced shift of the Bragg wavelength saturated at a dose of 0.1 MGy at a level less than 25 pm, which could still be decreased by optimization of the grating parameters. Our results confirm that FBGs are good candidates for sensing applications in radiation environments 相似文献
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V. Zajic K. Kloesel D. Ngo P. M. Kibuule A. Oladipupo T. N. Fogarty R. A. Kohler E. G. Stassinopulos 《Journal of Electronic Materials》1990,19(7):689-697
Radiation hardened 16K and 64K CMOS SRAMs were tested at the Brookhaven SEU Test Facility. No failures of 16K SRAMs were observed
at room temperature with any value of the feedback resistors. SEU cross section measured at elevated temperatures was a function
of reduced feedback resistance. A difference was observed in critical LET forBr andAu ions. SEU cross section decreased at very high angles of incidence. After initial SEU testing, the 64K SRAM was degraded
by proton total dose irradiation. An increase in the SEU cross section as well as imprinting of the memory pattern was observed.
Test chips fabricated by the same technology were also submitted to proton radiation. Threshold voltage shift was measured
for NMOS transistors with and without inversion bias. An increase in the density of interface states for both NMOS and PMOS
transistors was measured by the charge-pumping technique.
This research has been supported by the NASA grants NAG-5-929 and NAG-9-333. 相似文献
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利用理论分析与试验验证手段研究了深亚微米SRAM(静态随机存取存储器)电路的最劣辐照效应。对各模块电路的辐照效应进行了详细分析:对于具备触发器结构的存储单元与运算放大器,对应的失效水平将与辐照过程中所存储状态具有极大相关性,此类电路倾向于存储或读取与辐照过程中所存储状态相同的状态值。设计了针对SRAM电路的最劣辐照测试方案,其中包含辐照后改变原有存储状态的写操作及针对改变后所存储状态进行的读操作。设计了针对容量8K位,特征尺寸0.25um的SRAM电路开展的辐照比对实验,利用该最劣辐照测试方案获取的抗总剂量水平(150krad(Si))相对于常用的简单测试方案所获取数值(1Mrad(Si))大大降低,说明常用的简单测试方案可能高估SRAM电路的抗辐照水平,同时验证了该最劣测试方案的合理性。 相似文献
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自由电子与周围电磁环境互作用时可以通过不同的形式辐射电磁波.超材料是一种人工复合材料,可实现传统自然材料所不具备的电磁特性.基于超材料与自由电子之间的相互作用可以打破传统电磁辐射系统的限制,实现对辐射电磁波的极化、相位、波前等特性的灵活操控,这为发展新型的自由电子辐射器件提供了新思路.本文简单介绍了切伦科夫辐射、史密斯... 相似文献
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In most of the total dose radiation models,the drift of the threshold voltage and the degradation of the carrier mobility were only studied when the bulk potential is zero.However,the measured data indicate that the total dose effect is closely related to the bulk potential.In order to model the influence of the bulk potential on the total dose effect,we proposed a macro model.The change of the threshold voltage,carrier mobility and leakage current with different bulk potentials were all modeled in this model,and the model is well verified by the measured data based on the 0.35μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences,especially the part of the leakage current. 相似文献