Optical properties of MgxZn1−xO nanowire photonic crystals

We investigate the optical properties of two-dimensional periodic arrays of well-aligned Mg_xZn_1−xO nanowires, i.e., Mg_xZn_1−xO nanowire photonic crystals. The nanowire photonic crystal can exhibit a photonic band gap in the visible range. As the mole fraction of Mg, x, increases, the edge frequencies of the band gap increase and the band gap size decreases. The characteristics of relative band gap and vacant point defect mode are also studied with varying x. From the finite-difference time-domain simulations, we show that the light extraction from nanowires can be controlled by varying the distance between optically excited nanowires and a waveguide, and the mole fraction of Mg. Controlling the light extraction from nanostructures can be useful in the implementation of nanoscale light emitting devices.     

Structural and optical properties of ZnO nanorods grown on MgxZn1−xO buffer layers

ZnO nanorod arrays were synthesized by chemical-liquid deposition techniques on Mg_xZn_1−xO (x = 0, 0.07 and 0.15) buffer layers. It is found that varying the Mg concentration could control the diameter, vertical alignment, crystallization, and density of the ZnO nanorods. The X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) data show the ZnO nanorods prefer to grow in the (0 0 2) c-axis direction better with a larger Mg concentration. The photoluminescence (PL) spectra of ZnO nanorods exhibit that the ultraviolet (UV) emission becomes stronger and the defect emission becomes weaker by increasing the Mg concentration in Mg_xZn_1−xO buffer layers.     

Properties of MgxZn1−xO thin films sputtered in different gases

Mg_xZn_1−xO alloy films were prepared on sapphire substrates using Ar and N₂ as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the Mg_xZn_1−xO films was studied. By using N₂ as the sputtering gas, the Mg_xZn_1−xO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping.     

Characterization of PbSe1−xTex thin films

The lead salts and their alloys are extremely interesting semiconductors due to their technological importance. The fabrication of devices with alloys of these compounds possessing detecting and lasing capabilities has been an important recent technological development. The high quality polycrystalline thin films of PbSe_1−xTe_x with variable composition (0≤x≤1) have been deposited onto ultra clean glass substrates by vacuum evaporation technique. As deposited films were annealed in vacuum at 350 K. The optical, electrical and structural properties of PbSe_1−xTe_x thin films have been examined. The optical constants (absorption coefficient and bandgap) of the films were determined by absorbance measurements in the wavelength range 2500-5000 nm using Fourier transform infrared spectrophotometer. The dc conductivity and activation energy of the films were measured in the temperature range 300-380 K. The X-ray diffraction patterns were used to determine the sample quality, crystal structure and lattice parameter of the films.     

Optical properties of MgxZn1−xO thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

The index dispersion at UV–VIS range for polycrystalline Mg_xZn_1−xO films on silicon with different Mg concentration was obtained by spectroscopic ellipsometry (SE) method. It decreases with the increase of the Mg content. Above the relative peak wavelength, they are well fitted by the first-order Sellmeier relation. The band gap of films on sapphire of different Mg content was determined from transmission measurements. Photoluminescence (PL) illustrated that for Mg_xZn_1−xO films every PL peak corresponded to a special excitation wavelength. The wavelength of the PL peak was proportional to the special excitation wavelength. A strong peak was obtained in the blue band for the films due to the large amount of oxygen vacancies caused by excess Zn and Mg atoms, while weak peak at ultraviolet band.     

Growth of cubic MgxZn1−xO alloy films by electron beam evaporation

We report the growth of cubic Mg_xZn_1−xO alloy thin films on quartz by electron beam evaporation. It can be found that all the samples have sharp absorption edges by the absorption measurements. X-ray diffraction measurements indicate the Mg_xZn_1−xO films are cubic phase with preferred orientation along the (1 1 1) direction. Energy dispersive spectrometry (EDS) demonstrates that the Mg concentration in Mg_xZn_1−xO films is much higher than the ceramic target used, and the composition can be tuned in a small scope by varying the substrate temperature and the beam electric current. The reasons of this phenomenon are also discussed.     

Effects of oxygen partial pressure and substrate temperature on the structure and optical properties of MgxZn1−xO thin films prepared by magnetron sputtering

Deposited with different oxygen partial pressures and substrate temperatures, Mg_xZn_1−xO thin films were prepared using a Mg_0.6Zn_0.4O ceramic target by magnetron sputtering. The structural and optical properties of the prepared thin films were investigated. The X-ray diffraction spectra reveal that all the films on quartz substrate are grown along (2 0 0) orientation with cubic structure. The lattice constant decreases and the crystallite size increases with the increase of substrate temperature. Both energy dispersive X-ray spectroscopy and calculated results suggest the ratio of Mg/Zn increases with increasing substrate temperature. The thin film deposited with T_s = 500 °C has a minimal rms roughness of 7.37 nm. The transmittance of all the films is higher than 85% in the visual region. The optical band gap is not sensitive to the oxygen partial pressure, while it increases from 5.63 eV for T_s = 100 °C to 5.95 eV for T_s = 700 °C. In addition, the refractive indices calculated from transmission spectra are sensitive to the substrate temperature. The photoluminescence spectra of Mg_xZn_1−xO thin films excited by 330 nm ultraviolet light indicate that the peak intensity of the spectra is influenced by the oxygen partial pressure and substrate temperature.     

Linear and nonlinear optical response of MgxZn1−xO: A density functional study

Total and partial density of states, frequency dependent complex refractive index including extinction coefficient, optical conductivity and transmission of Mg_xZn_1−xO (0≤x≤1) in rocksalt and wurtzite phases are calculated using full potential linearized augmented plane wave (FP-LAPW) method. The real part of refractive index decreases while the extinction coefficient, optical conductivity and transmission for rocksalt phase increases with the increase in Mg concentration. In wurtzite phase, ordinary and extraordinary indices decrease while extinction coefficient, optical conductivity and transmission increase in parallel as well as perpendicular to c-axis with the increase in the Mg concentration.     

Electric-field-induced energy spectra and dispersions of ZnO/MgxZn1−xO MQWs

The energy spectra and dispersion relations of carriers in the presence of an electric field applied along the growth direction in ZnO/Mg_xZn_1−xO multiple quantum wells (MQW) are calculated using the asymptotic transfer method (ATM) on the basis of the quasistationary state approximation. The energy spectra of the carriers induce some quasi-bound levels under electric fields. The dispersion relations for the energy of the ground state and lower excitation states still have parabolic shapes for both the electrons and the heavy holes in the presence of a moderate electric field. Our results also reveal that the number of energy levels increases with increasing number of ZnO quantum wells and that the energies increase with both increasing Mg composition x and electric field strength.     

Observation of optical properties related to room-temperature ferromagnetism in co-sputtered Zn1−xCoxO thin films

We report on the analysis of optical transmittance spectra and the resulting ferromagnetic characteristics of sputtered Zn_1−xCo_xO films. Zn_1−xCo_xO films were prepared on (0001)-oriented Al₂O₃ substrates by the radio-frequency (rf) magnetron co-sputtering method. The XRD results showed that the crystallinity of films was properly maintained up to x=0.30 and no second phase peaks were detected up to x=0.40. The transmittance spectra showed both the increase of the absorption band intensity and the red shift of the absorption peak as well as the band edge with increasing x. We have proved experimentally that these changes depend on Co concentration. These optical properties suggest that sp-d exchange interactions and typical d-d transitions become activated with increasing x, which leads to the enhancement of ferromagnetic properties in Zn_1−xCo_xO films as shown in the AGM results. Therefore, it is concluded that the ferromagnetism derives from the substitution of Co²⁺ for Zn²⁺ without changing the wurtzite structure.     

Electrical and optical properties of GexFexSe100−2x chalcogenide thin films

Optical absorption at room temperature and electrical conductivity at temperatures between 283 and 333 K of vacuum evaporated Ge_xFe_xSe_100−2x (0≤x≤15) amorphous thin films have been studied as a function of composition and film thickness. It was found that the optical absorption is due to indirect transition and the energy gap increases with increasing both Ge and Fe content; on the other hand, the width of the band tail exhibits the opposite behavior. The optical band gap E_opt was found to be almost thickness independent. The electrical conductivity show two types of conduction, at higher temperature the conduction is due to extended states, while the conduction at low temperature is due to variable range hopping in the localized states near Fermi level. Increasing Ge and Fe contents were found to decrease the localized state density N(E_F), electrical conductivity and increase the activation energy for conduction, which is nearly thickness independent. Variation of the atomic densities ρ, molar volume V, glass transition temperature T_g cohesive energy C.E and number of constraints N_Co with average coordination number Z was investigated. The relationship between the optical gap and chemical composition is discussed in terms of the cohesive energy C.E, average heat of atomization and coordination numbers.     

Structural, electrical, optical and magnetic properties of Co0.2AlxZn0.8−xO films

Co_0.2Al_xZn_0.8−xO films prepared with different molar ratio of aluminum nitrate to zinc acetate were deposited on substrates by the sol-gel technique. X-ray diffraction, photoluminescence and ferromagnetism measurements were used to characterize the Co_0.2Al_xZn_0.8−xO diluted magnetic semiconductors. The authors found that the intensity of the acceptor-related photoluminescence increased with increasing aluminum concentration and an increase in the number of the acceptor-like defects (zinc vacancies especially) in the Co_0.2Al_xZn_0.8−xO film might lead to the enhancement of the magnetic properties. This implies that controls of the aluminum concentration and the number of the acceptor-like defects are important factors to produce strong ferromagnetism Co_0.2Al_xZn_0.8−xO films prepared by the sol-gel method.     

Optical properties of exciton confinement in wurtzite ZnO/MgxZn1−xO coupled quantum dots

Based on the framework of effective-mass approximation and variational approach, optical properties of exciton are investigated theoretically in ZnO/Mg_xZn_1−xO vertically coupled quantum dots (QDs), with considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the dot height and the barrier thickness between the coupled wurtzite ZnO QDs) are calculated with the built-in electric field in detail. The results elucidate that structural parameters have a significant influence on the exciton state and optical properties of ZnO coupled QDs. These results show the optical and electronic properties of the quantum dot that can be controlled and also tuned through the nanoparticle size variation.     

Effect of sulfur additive on density of localized states in nanostructures chalcogenide Se95−xSxZn5 thin films

This paper reports the measurement of space charge limited conduction (SCLC) on the fabricated thin films of Se_95−xS_xZn₅ (0.2≤x≤10) in temperature range 313–353 K for the first time. At high electric fields (E∼10⁴ V/cm), the current could be fitted into the theory of space charge limited conduction, in case of uniform distribution of localized states in mobility gap. The homogeneity and surface morphology of thin films were assessed by scanning electron microscopy. The crystalline nature of the thin films was confirmed by powder XRD and the crystallite size was calculated using Scherer's formula. The crystallite size and density of localized states were found to increase with the increase of sulfur concentration. DC conductivity and activation energy were calculated and found to decrease and increase respectively, with the increase of sulfur concentration.     

Influence of Mg content on optical properties of exciton confinement in wurtzite ZnO/MgxZn1−xO coupled quantum dots

Based on the framework of effective-mass approximation and variational approach, optical properties of exciton are investigated theoretically in ZnO/Mg_xZn_1−xO vertically coupled quantum dots (QDs), with considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the structural parameters (the dot height, the barrier thickness between the coupled wurtzite ZnO QDs and Mg content x in the barrier layers) is calculated in detail. The results elucidate that Mg content have a significant influence on the exciton state and optical properties of ZnO coupled QDs. When Mg content x increases, the strong built-in electric field increases and leads to the redshift of the effective band gap of the Mg_xZn_1−xO layer. These theoretical results are useful for design and application of some important photoelectronic devices constructed by using ZnO strained QDs.     

Effect of substrate temperature on the morphology, structural and optical properties of Zn1−xCoxO thin films

Zn_1−xCo_xO thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn_1−xCo_xO thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of V_O and Zn_i (V_OZn_i). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the V_OZn_i slightly decreased as substrate temperature increased.     

Superhydrophilic stability enhancement of RF co-sputtered TixSi1−xO2 thin films in dark

Ti_xSi_1−xO₂ compound thin-film systems were deposited by reactive RF magnetron co-sputtering technique. The effect of Ti concentration on the hydrophilicity of Ti_xSi_1−xO₂ compound thin films was studied and it was shown that the films with Ti_0.6Si_0.4O₂ composition possess the best hydrophilic property among all the grown samples. Surface ratio and average roughness of the thin films were measured by atomic force microscopy (AFM). Surface chemical states and stoichiometry of the films were determined by X-ray photoelectron spectroscopy (XPS). In addition, XPS revealed that the amount of Ti-O-Si bonds in nanometer depth from the surface of the Ti_0.6Si_0.4O₂ films was the maximum, which resulted in the most stable superhydrophilic property. According to XRD data analysis for the pure TiO₂ films, the polycrystalline anatase phase was formed with an average grain size of about 15 nm. Moreover, amorphous phase was also formed for the Ti_xSi_1−xO₂ compound systems due to presence of silicon in the films. Finally, optical properties of the films such as transmission, reflection and band gap energy were investigated using UV-vis spectrophotometry. It was found that the transmittance of the films was decreased with increasing Ti concentration in the films.     

Preparation, structural and photoluminescent properties of CeO2:Eu films derived by Pechini sol-gel process

In this study, CeO₂ and CeO₂:Eu films were prepared by a simple Pechini sol-gel process and dip-coating method. CeO₂ were successfully synthesized by hydrolysis of cerium nitrate. Thermogravimetric analysis was used to study the thermal chemical properties of sol-gel powder. Structural properties of CeO₂ films annealed at different temperature ranging from 400 to 900 °C were investigated by X-ray diffraction, field emission scanning electron microscopy, and Fourier transform infrared spectroscopy. Luminescent properties of CeO₂:Eu³⁺ films were investigated by excitation and emission spectra. Our results show that CeO₂ is a good host material for rare earth ions doping and Pechini sol-gel process is a useful method to derive high quality, macrocrack free, pure and doped CeO₂ films.     

The optical properties of CdxZn1−xS thin films on glass substrate prepared by spray pyrolysis method

A series of Cd_xZn_1−xS thin films have been deposited on glass substrates using spray pyrolysis technique. The crystallinity and microstructure of Cd_xZn_1−xS thin films have been investigated by X-ray diffraction (XRD). Based on the results of Hall measurements, the films obtained were an n-type semiconductor. The X-ray data analysis of Cd_xZn_1−xS thin films showed that the grain size of the Cd_xZn_1−xS increased with increase in Cd composition. It is observed that the band gap increases as the Cd composition decreases. The results also showed a blue shift of absorption edge of optical transmission spectra is increases as Zn ratio increases. The effects of Cd composition on the structural and optical properties of Cd_xZn_1−xS thin films were related to their grain size, stress and carrier concentration.