Improvement of electrical and optical properties of Ga and N co-doped p-type ZnO thin films with thermal treatment

Ga and N co-doped p-type ZnO thin films were epitaxially grown on sapphire substrate using magnetron sputtering technique. The process of synthesized Ga and N co-doped ZnO films was performed in ambient gas of N₂O. Hall measurement shows a significant improvement of p-type characteristics with rapid thermal annealing (RTA) process in N₂ gas flow, where more N acceptors are activated. The film rapid thermal annealed at 900 °C in N₂ ambient revealed the highest carrier concentration of 9.36 × 10¹⁹ cm⁻³ and lowest resistivity of 1.39 × 10⁻¹ Ω cm. In room and low temperature photoluminescence measurements of the as grown and RTA treated film, donor acceptor pair emission and exciton bound to acceptor recombination at 3.25 and 3.357 eV, respectively, were observed.     

Variation of spark-processing parameters on the photoluminescence properties of spark-processed silicon

Electrical and physical parameters, which influence the photoluminescence (PL) properties of spark-processed silicon (sp-Si), were systematically varied in order to obtain optimal PL emission. Among these parameters are the average spark current, the pulse width of the spark events, the frequency of the pulses, the processing time, the electrode diameter, the distance between the electrodes, the spark-processing environment, and the gas ambient pressure. It was found that for optimal PL emission the processing current needs to be between 20 and 40 mA, and the pulse frequency of the sparks between 10 and 15 kHz. Further, the N₂/O₂ ratio of the processing environment needs to be about 7:3 and the ambient gas pressure and the processing time as large as feasible. The conditions that are favorable for green PL are a small pulse width, a small counter electrode diameter, a small gap between electrodes, a relatively large nitrogen concentration in the processing chamber, and a comparatively large spark frequency. In the opposite cases, a UV/blue PL is predominantly observed. The results are discussed in terms of various thermal effects on the resulting molecules or defects, which are believed to be important for the PL emission.     

Reactive pulsed laser deposition of gold nitride thin films

We report on the growth and characterization of gold nitride thin films on Si 〈1 0 0〉 substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N₂ or NH₃). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4-20) × 10⁻⁸ Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10⁻⁸ Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N₂ phase. All these measurements point to the formation of the gold nitride phase.     

Optical emission spectroscopy investigation of sputtering discharge used for SiOxNy thin films deposition and correlation with the film composition

The r.f. discharge of sputtering silicon target using argon-oxygen-nitrogen plasma was investigated by optical emission spectroscopy. Electronic temperature (T_e) and emission line intensity were measured for different plasma parameters: pressure (from 0.3 to 0.7 Pa), power density (0.6-5.7 W cm⁻²) and gas composition. At high oxygen concentration in the plasma, both T_e and the target self-bias voltage (V_b) steeply decrease. Such behaviour traduces the target poisoning phenomenon. In order to control the deposition process, emission line intensity of different species present in the plasma were compared to the ArI (λ = 696.54 nm) line intensity and then correlated to the film composition analysed by Rutherford Backscattering Spectroscopy.     

Surface enhanced Raman scattering of organic sample powders spread over vacuum-evaporated silver thin film

Surface enhanced Raman scattering (SERS) from samples prepared by spreading para-nitrobenzoic acid (PNBA) and adenosine powders over silver thin films was achieved. The SERS intensities of the ionized PNBA on the silver film increase with increased applied pressure through a cover-glass and reach a maximum at 0.6 MPa. In contrast, the signals caused by adenosine remain nearly unchanged under applied pressures of 0-0.6 MPa. Beyond 0.6 MPa, the signals attributable to samples decrease in intensity. Atomic force microprobe images reveal that nanometer-scale surface morphology is changed by 0.8 MPa pressure, suggesting that the decrease in SERS intensity is related to pressure-induced morphological changes. Results obtained in this study indicate that SERS spectra are obtainable easily, without solvents, under ambient conditions using dispersion of the sample powder.     

Propagation of LaMnO3 laser ablation plume in oxygen gas

The propagation of LaMnO₃ laser ablation plume in oxygen background has been investigated using fast photography of overall visible plume emission and time-resolved optical emission spectroscopy. The plume expansion was studied with ambient oxygen pressures ranging from vacuum level to 100 Pa. Free-expansion, splitting, sharpening and stopping of the plume were observed at different pressures and time delays after the laser pulse. Time-resolved optical emission spectroscopy showed that oxides are mainly formed through reaction of the atomic species ablated from the target with oxygen in the gas-phase. These reactions mainly affect the content of lanthanum oxide in the plume, while emission of manganese oxide is barely observed in all the range of pressure investigated.     

XPS studies of short pulse laser interaction with copper

The effect of laser ablation on copper foil irradiated by a short 30 ns laser pulse was investigated by X-ray photoelectron spectroscopy. The laser fluence was varied from 8 to 16.5 J/cm² and the velocity of the laser beam from 10 to 100 mm/s. This range of laser fluence is characterized by a different intensity of laser ablation. The experiments were done in two kinds of ambient atmosphere: air and argon jet gas.The chemical state and composition of the irradiated copper surface were determined using the modified Auger parameter (α′) and O/Cu intensity ratio. The ablation atmosphere was found to influence the size and chemical state of the copper particles deposited from the vapor plume. During irradiation in air atmosphere the copper nanoparticles react with oxygen and water vapor from the air and are deposited in the form of a CuO and Cu(OH)₂ thin film. In argon atmosphere the processed copper surface is oxidized after exposure to air.     

Analysis of KrF excimer laser beam modification resulting from ablation under closed thick film flowing filtered water

The application of a closed thick film flowing filtered water to immerse the ablation etching mechanism of an excimer laser poses interesting possibilities concerning debris control, modification of machined feature topography and modification of the ablation rate. Furthermore, these parameters have been shown to be dependent on flow velocity; hence, offering further user control of machining characteristics. However, the impact of this technique requires investigation. This contribution offers comparison of the calculated ablation pressure and the effect on feature surface characteristics given for laser ablation of bisphenol A polycarbonate using KrF excimer laser radiation in ambient air against laser ablation of the same substrate under closed thick film flowing filtered water immersion. Also, an impact of such immersion equipment on the optical performance of the micromachining centre used is quantified and reviewed. The pressure is calculated to have risen by a magnitude of 48, when using the liquid immersed ablation technique. This increase in pressure is proposed to have an increased surface roughness, promoting the number of asperities with a surface area lower than 16 μm²; resulting in a diffuse reflection of light and an apparent darkening of features. The focal length of the optical system was accurately predicted to increase by 2.958 mm, when using the closed flowing liquid immersion equipment. This equipment is predicted to have increased the optical depth of focus via reduction in the angle of convergence of the two defining image rays; yet the perceived focus, measured discretely by mean feature wall angle, was found to be 25% smaller when using the closed thick film flowing filtered water immersion technique instead of similar laser ablation in ambient air. A compressed plume interaction is proposed as a contributing factor in this change.     

Early stage expansion and time-resolved spectral emission of laser-induced plasma from polymer

In the nanosecond laser ablation regime, absorption of laser energy by the plasma during its early stage expansion critically influences the properties of the plasma and thus its interaction with ambient air. These influences can significantly alter spectral emission of the plasma. For organic samples especially, recombination of the plasma with the ambient air leads to interfering emissions with respect to emissions due to native species evaporated from the sample. Distinguishing interfering emissions due to ambient air represents a critical issue for the application of laser-induced breakdown spectroscopy (LIBS) to the analysis of organic materials. In this paper, we report observations of early stage expansion and interaction with ambient air of the plasma induced on a typical organic sample (nylon) using time-resolved shadowgraph. We compare, in the nanosecond ablation regime, plasmas induced by infrared (IR) laser pulses (1064 nm) and ultraviolet (UV) laser pulses (266 nm). Nanosecond ablation is compared with femtosecond ablation where the post-ablation interaction is absent. Subsequent to the early stage expansion, we observe for each studied ablation regime, spectral emission from CN, a typical radical for organic and biological samples. Time-resolved LIBS allows identifying emissions from native molecular species and those due to recombination with ambient air through their different time evolution behaviors.     

Effect of surface preparation on the morphology of ZnO nanorods

The effects of Si substrate orientation and surface treatment on the morphology and density of Zinc oxide (ZnO) nanorods were investigated. The size and density of ZnO nanorods were influenced by Si substrate orientation and surface preparation. ZnO nanorods synthesized on the ideally H-terminated Si(1 1 1) prepared with an NH₄F solution resulted in the biggest size and the lowest density. It is suggested that the smoother surface of the Si substrate and lattice shape match with a larger atomic distance result in the increase of the ZnO seedlayer's grain size, which in turn enhances the size of ZnO nanorods grown on it. The optical properties of the ZnO nanorods were affected by their size and crystallinity. The smallest ZnO nanorods with a preferential c-axis orientation synthesized on the HF-treated Si(1 1 1) surface showed the highest intensity ratio of UV to visible emission, and the biggest ZnO nanorods synthesized on the N₂-sparged NH₄F-treated Si(1 1 1) surface showed the lowest intensity ratio of UV to visible emission. Therefore, it can be concluded that Si substrate orientation and surface preparation significantly affect the optical properties of ZnO nanorods.     

Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

Carbon nitride (CNx) thin films have been grown on Si 〈1 0 0〉 by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N₂ plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C⁺ ions, C atoms, C₂, N₂; and CN radicals, and N₂⁺ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the “four-probe-test method” determining sheet resistivity and correlating surface conductivity with chemical composition.     

Harmonic generation in ZnO nanocrystalline laser deposited thin films

ZnO plasma produced by third harmonic 355 nm of Nd:YAG laser at various ambient pressures of oxygen was used for depositing quality nanocrystalline ZnO thin films. Time and space resolved optical emission spectroscopy is used to correlate the plasma properties with that of deposited thin films. The deposited films showed particle size of 8 and 84 nm at ambient oxygen pressure of 100 and 900 mTorr, respectively. Third harmonic generation observed in ZnO thin films deposited under 100 mTorr of ambient oxygen is reported.     

Studies of luminescence properties of ZnO and ZnO:Zn nanorods prepared by solution growth technique

Pyramidal ZnO nanorods with hexagonal structure having c-axis preferred orientation are grown over large area silica substrates by a simple aqueous solution growth technique. The as-grown nanorods were studied using XRD, SEM and UV-vis photoluminescence (PL) spectroscopy for their structural, morphological and optical properties, respectively. Further, the samples have also been annealed under different atmospheric conditions (air, O₂, N₂ and Zn) to study the defect formation in nanorods. The PL spectra of the as-grown nanorods show narrow-band excitonic emission at 3.03 eV and a broad-band deep-level emission (DLE) related to the defect centers at 2.24 eV. After some mild air annealing at 200 °C, fine structures with peaks having energy separation of ∼100 meV were observed in the DLE band and the same have been attributed to the longitudinal optical (LO) phonon-assisted transitions. However, the annealing of the samples under mild reducing atmospheres of N₂ or zinc at 550 °C resulted in significant modifications in the DLE band wherein high intensity green emission with two closely spaced peaks with maxima at 2.5 and 2.7 eV were observed which have been attributed to the V_O and Zn_i defect centers, respectively. The V-I characteristic of the ZnO:Zn nanorods shows enhancement in n-type conductivity compared to other samples. The studies thus suggest that the green emitting ZnO:Zn nanorods can be used as low voltage field emission display (FED) phosphors with nanometer scale resolution.     

Raman spectroscopy of SWNTs produced by a XeCl excimer laser ablation at high temperatures

Synthesis of single-wall carbon nanotubes (SWNTs) was carried out by an ablation method using a XeCl excimer laser. It was irradiated onto a graphite target containing Co and Ni at the temperatures of 1073, 1173, 1273, 1373, 1473, 1523 and 1623 K under the atmosphere (0.1 MPa) of Ar gas with the flow rate of 12 ml/min. The measurement by a scanning/transmission electron microscope and Raman spectroscopy found the formation of SWNTs with the diameter of about 1.3 nm and the length of about 2 μm in ablated carbonaceous soot. The ratio of peak intensity of 1590 cm⁻¹ (G band) to that of 1335 cm⁻¹ (D band) in the high frequency Raman spectra increased with increasing the ambient temperature. The radial breathing mode (RBM) in the low frequency Raman spectra shows that the mean diameter of SWNTs increased with increasing the ambient temperature.     

Experimental study of enhanced emission of the laser-ablated plume in backing gas

The effects of background gases on the optical emission of the excimer-laser-ablated plume from a brass target have been studied experimentally. It is found that the plume emission can be enhanced significantly in a proper gas ambient. In hydrogen, the highest peak intensity is detected, and in argon, there is a distinctive difference in the pressure-dependent emission between in He and in the other three gases, Ar, N₂ and H₂. Moreover, the monitored line peak intensity remains unchanged in Ar and N₂ and increases in H₂ within a distance above the target surface; but in He, the observed peak intensity decreases with distance like in vacuum. Furthermore, the emissions of several more atomic lines of Cu and Zn atoms from the plume are also found to be enhanced in the same manner in gas ambient. Some physical processes involved in the plume expansion and the possible mechanisms for the enhanced emission of the plume in backing gas are discussed.     

Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques

Amorphous carbon nitride (a-CN_x) thin films have been synthesised by three different deposition techniques in an Ar/N₂ gas mixture and have been deposited by varying the percentage of nitrogen gas in the mixture (i.e. the N₂/Ar + N₂ ratio) from 0 to 10%. The variation of the electrical conductivity and the gap values of the deposited films versus the N₂/Ar + N₂ ratio were investigated in relation with their local microstructure. Film composition was analysed using Raman spectroscopy and optical transmission experiments. The observed variation of electrical conductivity and optical properties are attributed to the changes in the atomic bonding structures, which were induced by N incorporation, increasing both the sp² carbon content and their relative disorder. The low N content samples seem to be an interesting material to produce films with interesting properties for optoelectronic applications considering the facility to control the gas composition as a key parameter.     

Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

N-doped ZnO films were deposited by RF magnetron sputtering in N₂/Ar gas mixture and were post-annealed at different temperatures (T_a) ranging from 400 to 800 °C in O₂ gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV-vis-NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T_a to become the preferred orientation at higher T_a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T_a, especially above 400 °C. The average visible transmittance (400-800 nm) of the as-deposited films (26%) was increased with the increasing T_a to reach a maximum of 75% at 600 °C but then decreased. In the PL spectra, A⁰X emission at 3.321 eV was observed for T_a = 400 °C besides the main D⁰X emission. The intensity of the A⁰X emission was decreased with the increasing T_a whereas D⁰X emission became sharper and more optical emission centers were observed when T_a is increased above 400 °C.     

Temperature Distributions Across the Plasma Layer of Planar Low Pressure Microwave Plasmas — A Comparative Investigation by Optical Emission Spectroscopy

Nowadays low temperature non-equilibrium plasmas received considerable attention in very different fields of plasma processing. The subject of the present paper is the comparative measurement of neutral gas temperature and optical excitation temperature to analyze the temperature distributions across the plasma layer of H₂ non-equilibrium plasmas (p = 0.2 – 1.5 kPa) with small admixtures of hydrocarbons in a novel planar microwave plasma source (2.45 GHz) used for plasmachemical deposition purposes by means of optical emission spectroscopy. Typical microwave power flux densities into the plasma lie within a range of 2 W cm^?2 to 20 W cm^?2. Results of neutral gas temperature measurements derived from H_α line Doppler profiles are compared with rotational temperatures of H₂ and N₂ molecules. The neutral gas temperature (800–1700 K) corresponds to the rotational temperature of the H₂ molecules (Fulcher band, R 0–0 branch) but shows a more distinct spatial gradient. The rotational temperature of admixtured N₂ molecules (2000–3000 K) is much more higher although Boltzmann distribution was ensured. The spatially resolved measured excitation temperature (1–3 eV) determined with the help of line intensity ratios of admixtured Ar well agrees with Langmuir probe measurements. The reported measurements as a whole demonstrate the feasibility of comparative investigations of different optically determined temperatures for expressive characterization of low pressure microwave plasmas.     

The morphology and optical properties of Cr-doped ZnO films grown using the magnetron co-sputtering method

Undoped ZnO and Zn_0.9Cr_0.1O films were prepared on Al₂O₃ (0 0 0 1) substrates using the magnetron co-sputtering technique. X-ray diffraction scans show that all films exhibit nearly single-phase wurtzite structure with c-axis orientation. Both chromium doping and growth ambient have a significant impact on the lattice constants and nucleation processes in ZnO film. A large quantity of subgrains (10 nm in size) has been observed on Zn_0.9Cr_0.1O film grown under Ar + O₂, while irregular plateau-like grains 40-50 nm in size were observed on Zn_0.9Cr_0.1O film grown under Ar + N₂. The ultraviolet-visible transmittance and optical bandgap of all films were also examined. The photoluminescence spectra of all films exhibit a broad emission located around 400 nm, which is composed of one weak ultraviolet luminescence and another rather intense near-violet one, as determined by Gaussian peak fitting. The near-violet emission centered on 400 nm might originate from the electron transition between the band tail state levels of surface defects and/or lattice imperfection in the ZnO film.