Enhanced infrared absorption of spatially ordered quantum dot arrays

We have investigated the intersubband absorption for spatially ordered and non-ordered quantum dots (QDs). It is found that the intersubband absorption of spatially ordered QDs is much stronger than that of non-ordered QDs. The enhanced absorption is attributed to the improved size uniformity concurrent with the spatial ordering for the growth condition employed. For the FTIR measurement under normal incidence geometry, using a undoped sample as reference can remove the interference effect due to multiple reflections.     

Nanophotonic waveguidance in quantum networks - A simulation approach for quantum state transfer

A cavity-assisted Raman process can initialize the inter-conversion of stationary spin qubits and flying photon qubits in quantum channels. The qubit transmission essentially requires the implementation of special laser fields to excite atoms at the transmitting node of the quantum cavity. The flying qubit is ultimately absorbed at the receiving node of the channel to regenerate the original spin state of the nanodot. The present paper deals with the phenomena involved in such nanophotonic waveguidance by the process of rigorous simulation, and it is reported that the results obtained by implementing suitable transmission protocol reflect well the reliable transfer/entanglement of the quantum states of the nanodot qubit.     

Two Electrons in a Quantum Dot: A Unified Approach

Low-lying energy levels of two interacting electrons confined in a two-dimensional parabolic quantum dot in the presence of an external magnetic field have been revised within the frame of a novel model. The present formalism, which gives closed algebraic solutions for the specific values of magnetic field and spatial confinement length, enables us to see explicitly individual effects of the electron correlation.     

Confined states in two-dimensional flat elliptic quantum dots and elliptic quantum wires

The energy spectrum and corresponding wave functions of a flat quantum dot with elliptic symmetry are obtained exactly. A detailed study is made of the effect of ellipticity on the energy levels and the corresponding wave functions. The analytical behavior of the energy levels in certain limiting cases is obtained.     

Control of the entanglement between triple quantum dot molecule and its spontaneous emission fields via quantum entropy

The time evolution of the quantum entropy in a coherently driven triple quantum dot molecule is investigated. The entanglement of the quantum dot molecule and its spontaneous emission field is coherently controlled by the gate voltage and the rate of an incoherent pump field. The degree of entanglement between a triple quantum dot molecule and its spontaneous emission fields is decreased by increasing the tunneling parameter.     

Novel effects produced on a two dimensional electron gas by introducing InAs dots in the plane of the quantum well

We show that the presence of InAs dots embedded in a host GaAs quantum well containing a two-dimensional electron gas dramatically modifies the cyclotron resonance (CR). Far-infrared CR measurements show two modes with different dispersions with applied magnetic field B. The lower-frequency mode, with a sub-linear dependence on B, is identified as a CR at low B, developing into a skipping orbit around the dot perimeters at higher B. This has not been previously observed for a system with randomly distributed scatterers. The higher-frequency mode is identified as a magnetoplasmon localised by the confining effect of the arrays of repulsive potentials due to the dots in the well.     

The carrier “antibinding” in quantum dots: a charge separation effect

We show that the carrier “antibinding” observed recently in semiconductor quantum dots, i.e., the fact that the ground state energy of two electron-hole pairs goes above twice the ground-state energy of one pair, can entirely be assigned to a charge separation effect, whatever its origin. In the absence of external electric field, this charge separation comes from different “spreading-out” of the electron and hole wavefunctions linked to the finite height of the barriers. When the dot size shrinks, the two-pair energy always stays below when the barriers are infinite. On the opposite, because barriers are less efficient for small dots, the energy of two-pairs in a dot with finite barriers, ends by behaving like the one in bulk, i.e., by going above twice the one-pair energy when the pairs get too close. For a full understanding of this “antibinding” effect, we have also reconsidered the case of one pair plus one carrier. We find that, while the carriers just have to spread out of the dot differently for the “antibinding” of two-pairs to appear, this “antibinding” for one pair plus one carrier only appears if this carrier is the one which spreads out the less. In addition a remarkable sum rule exists between the “binding energies” of two pairs and of one pair plus one carrier.     

Long-range radiative interaction between semiconductor quantum dots

We model the resonant excitation transfer between semiconductor quantum dots, accounting for the radiative nature of the electromagnetic field. The model based on Maxwell equations and on a non-local linear susceptibility accounts both for the instantaneous dipole–dipole coupling, decaying as R⁻³, and for retardation effects, decaying as R⁻¹. The coupling is strongly resonant and its spatial range is of the order of the wavelength, due to the radiative nature of the retarded contribution.     

Studies on the second-harmonic generations in cubical quantum dots with applied electric field

The second-harmonic generation (SHG) coefficient for cubical quantum dots (CQDs) with the applied electric field is theoretically investigated. Using the compact density-matrix approach and the iterative method, we get the analytical expression of the SHG coefficient. And the numerical calculations for the typical GaAs/AlAs CQDs are presented. The results show that the SHG coefficient can reach the magnitude of 10⁻⁵ m/V, about two orders higher than that in spherical quantum dot system. More importantly, the SHG coefficient is not a monotonic function of the length L of CQDs as well as the applied field F. If we select suitable values of F and L, we will get a higher value of the SHG coefficient. In addition, the relaxation rate also affects the SHG coefficient obviously.     

Temperature-induced broadening of the emission lines from a quantum-dot nanostructure

We report on the effect of temperature fluctuations on the midinfrared electroluminescence from a cascade of coupled AlInAs quantum dots and GaAs quantum wells. The observed line width is significantly broadened with increasing temperature. We then present our theoretical results on homogeneous line broadening due to temperature fluctuations for our experimental system. Our numerical simulations clearly indicate that, temperature fluctuations can account for the observed finite width of the emission lines at high-temperatures.     

Studies on the third-harmonic generations in cylindrical quantum dots with an applied electric field

The third-harmonic generation (THG) coefficient for cylinder quantum dots with an applied electric field is theoretically investigated. Using the compact density-matrix approach and the iterative method, we get the analytical expression of the THG coefficient, and the numerical calculations of the typical GaAs/AlAs cylinder quantum dots are presented. The results show that the THG coefficient can reach the magnitude of 10⁻⁹ m²/V ². Apart from the length L$L$ and radius R$R$ of cylindrical quantum dots, both the parabolic confining potential and an applied electric field can also influence the THG coefficient.     

Zeeman effect and magnetic anomalies in narrow-gap semiconductor quantum dots

We present a systematic theoretical study, based on the Kane–Weiler 8×8 k·p model, of the linear Zeeman splitting introduced by the interaction between the angular momentum and the magnetic field which can give a measure of the non-linear Zeeman effect associated with interband coupling and diamagnetic contributions. The conduction and valence bands g-factors are calculated for InSb spherical and semi-spherical quantum dots. The calculations of the g-factors showed an almost linear dependence, for the ground state, on the magnetic field. We have also found that the strong magnetic field dependence as well as the dependence on the dot size of the effective spin splitting can be unambiguously attributed to the strength of the inter-level mixing.     

Selecting wave function states in open quantum dots

We study how wave function scarring in an open quantum dot is influenced as the strength of its environmental coupling is varied and show evidence for groups of wave function scars that recur periodically with gate voltage. The precise form of these scars is found to evolve with gate voltage, which we discuss in terms of the properties of the semi-classical orbits that give rise to the scars. We also provide convincing experimental evidence for a correlation between the scars and the oscillations observed in the conductance when the gate voltage is varied.     

Linear and nonlinear optical properties in a disk-shaped quantum dot with a parabolic potential plus a hyperbolic potential in a static magnetic field

Linear and nonlinear optical properties in a disk-shaped quantum dot (DSQD) with a parabolic potential plus a hyperbolic potential in a static magnetic field are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy levels and the wave functions of an electron are obtained by three kinds of approximation methods. It is found that optical absorption coefficients and refractive index changes are not only by the characteristic parameters of the hyperbolic potential and the confinement frequency, but also by the magnetic field.     

Far-infrared spectroscopy of quantum wires and dots, breaking Kohn’s theorem

We review far-infrared experiments on quantum wires and dots. In particular, we show that with tailored deviations from a parabolic external lateral confinement potential one can break Kohn’s theorem. This allows a detailed investigation of the internal relative motion in quantum dots and wires and the study of electron–electron interaction effects, for example, the formation of compressible and incompressible states in quantum dots and antidots.     

Entanglement in S states of two-electron quantum dots with Coulomb impurities at the center

We study a system of two Coulombically interacting electrons in an external harmonic potential in the presence of an on-centre Coulomb impurity. Detailed results for the dependencies of the reduced von Neumann entropy on the control parameters of the system are provided for both the ground state and the triplet S states with the lowest energy. Among other features, it is found that in the weak confinement regime the entanglement is strongly affected by the presence of an acceptor impurity.     

Inversion of the exciton fine structure splitting in quantum dots

The fine structure splitting of exciton state was measured for a large number of single InAs quantum dots in GaAs. It is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Degeneracy of the exciton spin states is an important step to producing entangled photons from the biexciton cascade. Thermal annealing reduces the exciton confinement and thereby increases the number of degenerate dots in a particular sample.     

Raman study of Si–Ge intermixing in Ge quantum rings and dots

The Ge/Si (1 0 0) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75 nm and Si cap with thickness 2.5 nm were deposited by the method of molecular beam epitaxy at the temperature range 640–700 °C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift of the Raman signal we have found that the average concentration of Ge decreases considerably from 44% to 27%, when the growth temperature increases, whereas the degree of strain relaxation remains roughly the same. This allows us to conclude that intermixing is a dominating mechanism for strain relaxation in processes of transformation of Ge quantum dots to quantum rings.     

Optically induced mechanical interaction between semiconductor quantum dots under an electronic resonance condition

Assuming an electronic resonance condition, we study the shape-dependence of the radiation force (RF) on a semiconductor quantum dot (QD) floating in medium and the optically induced mechanical interaction (OIMI) between two QDs with Maxwell stress tensor (MST) method, where the response fields are calculated by the improved discrete dipole approximation (DDA). Main results are as follows: (1) Properties of the RF on an isolated QD drastically change due to its shape and polarization of an incident light, which can be used for shape-selective manipulation. (2) Anomalous OIMI between two QDs arises depending on the spatial structures of internal fields, which results from the interaction between polarizations in respective QDs when they are near each other.