Simulation of bulk-absorption thermal lensing in transmissive optics of gravitational waves detectors

This paper presents finite-element modelling simulations of thermal lensing and thermal lens compensation in transmissive optics for gravitational wave detectors. We compare the current candidate test mass materials, fused silica and sapphire, in terms of sample geometry and time-dependent phenomena. For both materials, the thermal-lensing time constant is a few minutes, yet the core temperature needs several tens of minutes to stabilize. Thermal lens compensation using simple radiative heating is limited in temperature by absorption in the test mass. This effect limits the maximum allowed absorption for sapphire to 10–20 ppm/cm. For reasonable parameters, optical path length compensation within 1 nm can be achieved over a beam radius of 5 mm. If the optical absorption of the transmissive optics is too high, compensation can be achieved by means of a separate compensation plate. PACS 42.25.Bs; 42.70.Ce     

Comparative study of UV absorption changes induced in germanosilicate glass by high-intensity femtosecond pulses at 267, 400 and 800 nm

We investigated UV absorption changes induced in 3.5 mol% Ge-doped fused silica at high-intensity (∼10¹¹-10¹³ W/cm²) femtosecond (130 fs) irradiation at 267, 400 and 800 nm. We have shown that the induced spectra in the region 190-300 nm are similar in all three cases. At 800 nm irradiation, in addition to the UV absorption changes, we observed small-scale damage due to self-focusing. This damage appears when the incident pulse fluence value of about 1 J/cm² (pulse intensity of about 7.5 × 10¹² W/cm²) is overcome, while the threshold for the induced absorption changes is twice lower.     

Production of defects in ZBLAN, ZBLAN:Tm and ZBLAN:Cr glasses by ultra-short pulses laser interaction

In this work we have studied pure and thulium- and chromium-doped ZBLAN glasses irradiated by ultra-short laser pulses. A Ti:sapphire CPA system was used, producing a 500 Hz train of pulses, centered at 830 nm, with 375 μJ of energy and 50 fs of duration (FWHM). The beam was focused by a 20 mm lens, producing a converging beam with a waist of 12 μm. The absorption spectra before and after laser irradiation were obtained showing production of color centers in pure, thulium-doped and chromium-doped ZBLAN glasses. A damage threshold of 9.56 T W/cm² was determined for ZBLAN.     

Rayleigh scattering in fused silica samples for gravitational wave detectors

Laser interferometer gravitational wave detectors require very high optical quality test masses. We report the bulk Rayleigh scattering in high quality fused silica samples. Results show that the scattering of the high quality fused silica is similar for various grades of fused silica from Heraeus. The total integrated scattering is about 0.7 ppm cm^− 1at 1064 nm wavelength, which agrees with the theoretical value calculated using known fused silica parameters. All samples show Rayleigh scattering ratio inhomogeneity of ~ 4%.     

Electron beam initiated grafting of methacryloxypropyl-trimethoxysilane to fused silica glass

The effect of electron beam pretreatment of fused silica glass upon its surface functional composition and possibility for subsequent immobilization of methacryloxypropyl-trimethoxysilane (MOPTMS) layer is studied using FTIR spectroscopy and adsorption of acid-base indicators. The content of Brensted acidic centers (silanol groups) on the irradiated fused silica surface is found to follow an “oscillatory” trend as function of the absorbed dose below 100 kGy at electron beam processing due to the alternating reactions of hydroxylation (probably as a result of Si-O-Si bond disruption and interaction with radiolyzed physically adsorbed water) and thermal dehydration/dehydroxylation at radiation heating. The best conditions for MOPTMS layer formation are based on the increased acidity of both silica surface (formation of acidic hydroxyls) and the reaction medium (MOPTMS deposition from acetic acid solution). The optimal value of absorbed dose at electron beam processing providing the highest efficiency of MOPTMS grafting is 50 kGy at accelerated electron energy 700 keV. Electron beam pretreatment of fused silica surface is shown to provide more efficient MOPTMS immobilization in comparison with conventional chemical and thermal grafting procedures. The obtained results are promising for the enhancement of the processes for the production of fused silica glass capillaries for electrochromatography and electrophoresis at the stage of an intermediate bifunctional layer formation required for the subsequent deposition of specific polymer coatings.     

Modulation of luciferase activity using high intensity focused ultrasound in combination with bioluminescence imaging, magnetic resonance imaging and histological analysis in muscle tissue

This study investigates the effect of high intensity focused ultrasound (HIFU) to muscle tissue transfected with a luciferase reporter gene under the control of a CMV-promoter. HIFU was applied to the transfected muscle tissue using a dual HIFU system. In a first group four different intensities (802 W/cm², 1401 W/cm², 2117 W/cm², 3067 W/cm²) of continuous HIFU were applied 20 s every other week for four times. In a second group two different intensities (802 W/cm², 1401 W/cm²) were applied 20 s every fourth day for 20 times. The luciferase activity was determined by bioluminescence imaging. The effect of HIFU to the muscle tissue was assessed by T1-weighted ± Gd-DTPA, T2-weighted and a diffusion-weighted STEAM sequence obtained on a 1.5-T GE-MRI scanner. Histology of the treated tissue was done at the end. In the first group the photon emission was at 3067.6 W/cm² 1.28 × 10⁷ ± 3.1 × 10⁶ photon/s (5.5 ± 1.2-fold), of 2157.9 W/cm² 8.1 ± 2.7 × 10⁶ photon/s (3.2 ± 1.1-fold), of 1401.9 W/cm² 9.3 ± 1.3 × 10⁶ photon/s (4.9 ± 0.4-fold) and of 802.0 W/cm² 8.6x ± 1.2 × 10⁶ photon/s (4.5 ± 0.6-fold) compared to baseline. In the second group the photon emission was at 1401.9 W/cm² and 802.0 W/cm² 14.1 ± 3.6 × 10⁶ photon/s (6.1 ± 1.5-fold), respectively, 5.1 ± 4.7 × 10⁶ photon/s (6.5 ± 2.0-fold). HIFU can enhance the luciferase activity controlled by a CMV-promoter.     

Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots

We have studied the effects of thermal annealing on the electrical properties of InAs/InP self-assembled quantum dots (QDs) using deep level transient spectroscopy (DLTS). It was found from the DLTS measurements that the activation energy of the QD signal varied from 0.47 to 0.60 eV and the emission cross section changed from 1.01×10⁻¹⁵ to 9.63×10⁻¹⁴ cm² when the annealing temperature increased up to 700 °C. As a result of the thermal annealing process at the temperature ranging from 500 to 600 °C, the higher activation energy and the larger emission cross section of the QD related signal were observed for the annealed samples compared to those for the as-grown sample. On the basis of the capture barrier height for the QDs structure being lowered from 0.24 to 0.06 eV at the annealing temperature of 700 °C, thermal damage was considered as the reason. The appropriate annealing process can provide a clue for the engineering of the energy levels in the self-assembled QD structures.     

Processing of transparent materials using visible nanosecond laser pulses

Laser micromachining of transparent materials is an intensively studied research area from the point of view of microoptical element fabrication. One of the most promising indirect processing methods is the laser-induced back-side dry etching (LIBDE). During this method, transparent targets are contacted with solid thin layers, which absorb and transform the pulse energy resulting in etching. The applicability of LIBDE technology for processing of fused silica using a visible nanosecond dye laser (λ=500 nm, FWHM=11 ns) and a 100-nm-thick aluminium absorbing layer was investigated. The applied fluence was varied in the range of 0–3050 mJ/cm²; the illuminated area was 0.1 mm². The threshold fluence of the LIBDE etching of fused silica was found to be approximately 540 mJ/cm². The chemical composition of the surface layers on and around the etched holes was investigated by field-emission scanning electron microscopy and energy-dispersive X-ray spectrometry. It was found that on average 0.4±0.3 at. % aluminium is built into the upper ∼1-μm-thick volume of the illuminated fused silica, while the aluminium content fell below the detection limit in the case of the original surface. Our experiments proved that the LIBDE procedure is suitable for microprocessing of transparent materials using visible nanosecond laser light. PACS 42.62.-b; 61.80.Ba; 81.16.Rf; 81.65.Cf     

Thermally tuned optical fiber for true time delay generation

A new technique for generating a continuous range of true time delay values is introduced. Heating optical fiber in order to change the effective index of the guided mode produces time delays. A 45-m section of single-mode silica fiber is demonstrated to produce a continuous range of time delay values from 0 to 211 ps over a temperature tuning range of 50°C (30–80°C). A thermal time delay factor is introduced and found to be 0.096 ps/m°C for Corning LEAF fiber. A 7.66-m section of multimode Lucina polymer fiber is demonstrated to produce a range of time delay values from 0 to 32 ps over a temperature tuning range of 30°C (30–60°C). The thermal time delay factor for this fiber is −0.1427 ps/m°C.     

Enhanced electrical and optical properties of room temperature deposited Aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing

High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10⁻³ Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10⁻⁴ Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm². Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.     

Thermal annealing effects on I–V–T characteristics of sputtered Cr/n-GaAs diodes

Sputtered Cr/n-GaAs Schottky diodes have been prepared and annealed at 200 and 400 °C. The current–voltage (I–V) characteristics of the as-deposited and annealed diodes have been measured in the temperature range of 60–320 K with steps of 20 K. The effect of thermal annealing on the temperature-dependent I–V characteristics of the diodes has been investigated experimentally. The ideality factor and barrier height (BH) values for 400 °C annealed diode approximately remain unchanged from 120 to 320 K, and those of the as-deposited sample from 160 to 320 K. The departures from ideality at low temperatures have been ascribed to the lateral fluctuations of the BH. The BH values of 0.61 and 0.74 eV for the as-deposited and 400 °C annealed diodes were obtained at room temperature, respectively. A Richardson constant value of 9.83 A cm⁻² K⁻² for 400 °C annealed Schottky diode, which is in close agreement with the known value of 8.16 A cm⁻² K⁻² for n-type GaAs. Furthermore, T₀ anomaly values of 15.52, 10.68 and 5.35 for the as-deposited and 200 and 400 °C annealed diodes were obtained from the nT versus T plots. Thus, it has been seen that the interface structure and quality improve by the thermal annealing at 400 °C.     

Impact of thermal effects induced by ultrasound on viability of rat C6 glioma cells

In order to have consistent and repeatable effects of sonodynamic therapy (SDT) on various cancer cells or tissue lesions we should be able to control a delivered ultrasound energy and thermal effects induced. The objective of this study was to investigate viability of rat C6 glioma cells in vitro depending on the intensity of ultrasound in the region of cells and to determine the exposure time inducing temperature rise above 43 °C, which is known to be toxic for cells. For measurements a planar piezoelectric transducer with a diameter of 20 mm and a resonance frequency of 1.06 MHz was used. The transducer generated tone bursts with 94 μs duration, 0.4 duty-cycle and initial intensity I_SATA (spatial averaged, temporal averaged) varied from 0.33 W/cm² to 8 W/cm² (average acoustic power varied from 1 W to 24 W). The rat C6 glioma cells were cultured on a bottom of wells in 12-well plates, incubated for 24 h and then exposed to ultrasound with measured acoustic properties, inducing or causing no thermal effects leading to cell death. Cell viability rate was determined by MTT assay (a standard colorimetric assay for assessing cell viability) as the ratio of the optical densities of the group treated by ultrasound to the control group. Structural cellular changes and apoptosis estimation were observed under a microscope. Quantitative analysis of the obtained results allowed to determine the maximal exposure time that does not lead to the thermal effects above 43 °C in the region of cells for each initial intensity of the tone bursts used as well as the threshold intensity causing cell death after 3 min exposure to ultrasound due to thermal effects. The averaged threshold intensity was found to be about 5.7 W/cm².     

Characteristics of filament induced Dammann gratings fabricated using femtosecond laser

To establish optimal processing conditions for direct write fabrication of diffractive optical elements such as gratings, waveguides, lenses, we have investigated the effect of process parameters such as scan speed, numerical aperture (NA) of objective lens, pulse energy on the characteristics of the filament induced inside fused silica with a femtosecond Ti:sapphire laser. The optimum process parameters were used to fabricate a number of Dammann gratings, 6×6 array, having different thicknesses and number of layers. The performance of these optical elements was evaluated by measuring their diffraction efficiencies. All gratings fabricated were strongly birefringent, the zero order spot with high intensity was not separated from the spot array, and the intensity distribution of 6×6 spot array exhibited some degree of nonuniformity. The single layer Dammann grating fabricated with a thickness of 80 μm attained a maximum diffraction efficiency of 38.8%.     

Ablation of transparent solids during self-limited deposition of diamond-like films from liquid hydrocarbons

A novel effect is studied of self-limitation of the diamond-like film thickness during laser irradiation of the interface of transparent substrates with liquid aromatic hydrocarbons. The interface is exposed through the transparent substrate to radiation of a copper vapor laser (wavelength of 510.6 nm, pulse duration of 20 ns). The thickness of diamond-like film increases linearly to 80-100 nm with the number of laser pulses and then saturates, while the substrate is ablated with nearly constant rate. This ablation rate depends on the thermal expansion coefficient of the substrate (glass, fused silica, sapphire, or CaF₂). The absorption of extinction coefficient of deposited films measured by ellipsometry is of order of 10⁴ cm^-1 and is sufficient to cause the significant heating of the interface. The ablation of the transparent substrates is due to their unequal thermal expansion compared to the diamond-like film having different thermal expansion coefficient. The measured ablation rates scale from 0.2 Å/pulse for glass to 4.5 Å/pulse for CaF₂. A 7m spatial resolution of the ablation process has been demonstrated for fused silica.     

Effect of surface roughness of TiO2 films on short-circuit current density of photoelectrochemical cell of ITO/TiO2/PVC-LiClO4/graphite

This paper reports the effect of surface topography of titanium dioxide films on short-circuit current density of photoelectrochemical solar cell of ITO/TiO₂/PVC-LiCLO₄/graphite. The films were deposited onto ITO-covered glass substrate by screen-printing technique. The films were tempered at 300 °C, 350 °C, 400 °C, 450 °C and 500 °C for 30 min to burn out the organic parts and to achieve the films with porous structure. The surface roughness of the films were studied using scanning electron microscope (SEM). Current–voltage relationship of the devices were characterized in dark at room temperature and under illumination of 100 mW cm⁻² light from tungsten halogen lamp at 50 °C. The device utilising the TiO₂ film annealed at 400 °C produces the highest short-circuit current density and open-circuit voltage as it posses the smoothest surface topography with the electrolyte. The short-circuit current density and open-circuit voltage of the devices increase with the decreasing grain size of the TiO₂ films. The short-circuit current density and open-circuit voltage are 0.6 μA/cm² and 109 mV respectively.     

Investigation on upconversion photoluminescence of Bi3TiNbO9:Er:Yb thin films

Bi₃TiNbO₉:Er³⁺:Yb³⁺ (BTNEY) thin films were fabricated on fused silica by pulsed laser deposition. It was demonstrated that different laser fluence and substrate temperature during growth of BTNEY upconversion photoluminescence (UC-PL) samples control the film’s grain size and hence influences the UC-PL properties. The average grain size of BTNEY thin films deposited on fused silica substrates with laser fluence 4, 5, 6, and 7 J/cm² are 30.8, 35.9, 40.6, and 43.4 nm, respectively. The 525 nm emission intensities increase with the deposition laser fluence and the emission intensities of BTNEY thin film deposited under 700 and 600 °C are almost 24 and 4 times, respectively, as strong as those of samples under 500 °C. The grain size of BTNEY thin film increases with the increasing temperature. UC-PL of BTNEY films is enhanced by increasing grain size of the films.     

Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF₂, MgF₂), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (t_p = 10 ps) lasers at UV wavelengths (λ₁ = 355 nm and λ₂ = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a λ₁ = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths (λ₁ = 266 nm and λ₂ = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm², respectively.     

Generation of high-contrast and high-intensity laser pulses using an OPCPA preamplifier in a double CPA, Ti:sapphire laser system

We demonstrate a high-contrast, high-intensity double chirped-pulse amplification (CPA) Ti:sapphire laser system using an optical parametric chirped-pulse (OPCPA) pre- amplifier. By injecting cleaned microjoule seed pulses into the OPCPA, a temporal contrast greater than 10¹⁰ within picosecond times before the main femtosecond pulse is demonstrated with an output pulse energy of 1.7 J and a pulse duration of 30 fs, corresponding to a peak power of 60 TW at a 10 Hz repetition rate. This system uses a cryogenically-cooled Ti:sapphire final amplifier and generates focused peak intensities in excess of 10²⁰ W/cm².     

Comparing study of subpicosecond and nanosecond wet etching of fused silica

The effectiveness of the laser induced backside wet etching (LIBWE) of fused silica produced by subpicosecond (600 fs) and nanosecond (30 ns) KrF excimer laser pulses (248 nm) was studied. Fused silica plates were the transparent targets, and naphthalene-methyl-methacrylate (c = 0.85, 1.71 M) and pyrene-acetone (c = 0.4 M) solutions were used as liquid absorbents. We did not observe etching using 600 fs laser pulses, in contrast with the experiments at 30 ns, where etched holes were found. The threshold fluences of the LIBWE at nanosecond pulses were found to be in the range of 360-450 mJ cm⁻² depending on the liquid absorbers and their concentrations. On the basis of the earlier results the LIBWE procedure can be explain by the thermal heating of the quartz target and the high-pressure bubble formation in the liquid. According to the theories, these bubbles hit and damage the fused silica surface. The pressure on the irradiated quartz can be derived from the snapshots of the originating and expanding bubbles recorded by fast photographic setup. We found that the bubble pressure at 460 mJ cm⁻² fluence value was independent of the pulse duration (600 fs and 30 ns) using pyrene-acetone solution, while using naphthalene-methyl-methacrylate solutions this pressure was 4, 5 times higher at 30 ns pulses than it was at 600 fs pulses. According to the earlier studies, this result refers to that the pressure should be sufficiently high to remove a thin layer from the quartz surface using pyrene-acetone solution. These facts show that the thermal and chemical phenomena in addition to the mechanical effects also play important role in the LIBWE procedure.     

Preparation and electrical properties of a pyrochlore-related Ce2Zr2O8−x phase

A pyrochlore-related Ce₂Zr₂O_8−x phase has been prepared in a reduction reoxidation process from Ce_0.5Zr_0.5O₂ powders. Ce₂Zr₂O_8−x, based on a cubic symmetry with a=1.053 nm, decomposes in nitrogen at 800 °C, but remains stable up to 900 °C in air. It shows mixed oxygen ionic and electronic conductivity. The bulk conductivity at 700 °C is 4×10⁻⁴ S cm⁻¹ in air and 1×10⁻² S cm⁻¹ in nitrogen, and the activation energy is 1.27 eV in air. In nitrogen, the Arrhenius law is not obeyed, and a curved plot was obtained from 400 to 700 °C; then, the conductivity decreased rapidly due to the thermal decomposition of Ce₂Zr₂O_8−x.