共查询到16条相似文献,搜索用时 62 毫秒
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分析了不同温度下超薄基区 Si Ge HBT中载流子温度及扩散系数随基区结构参数的变化 ,并给出了实验比较 相似文献
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提出了一个模拟SiGe基区HBT器件特性的物理模型。在基区部分考虑了发射结处的价带不连续、大注入效应、Ge组份变化及重掺杂效应引起的能带变化的影响;在集电区分析时考虑了基区推出效应、载流子速度饱和效应、电流引起的空间电荷区效应以及准饱和效应。在此基础上给出了SiGe基区HBT器件的电流和电荷公式。同时开发了SiGe基区HBT的直流瞬态模型和小信号模型。利用修改的SPICE程序模拟了实际SiGe基区 相似文献
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研究了p型Si1-xGex应变层中补偿浅能级杂质(P、As、Sb)的低温陷阱效应。研究发现,1)三种补偿浅能杂质P、As、Sb相比较,Sb的陷阱效应最小,As的最大;2)Ge组份x越大,低温陷阱效应越小;3)补偿浅能级杂质浓度ND越大,低温陷阱效应越显著,温度越低,陷阱作用越明显。 相似文献
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Sukla Basu 《中国电子科技》2010,8(2)
Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process.Speed of these devices is mainly determined by transit time of minority carriers across the device.Base transit time is the most important component of the total transit time.An analytical model is developed here to predict the variation of base transit time with Ge content,base doping concentration,temperature,and other device parameters.Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region.Band gap narrowing effect due to high doping concentration is also taken into account in the model. 相似文献
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We present an analysis of a modified double-polysilicon SiGe:C HBT module showing a CML ring oscillator gate delay τD of 2.5 ps, and fT/fmax/BVCEo values of 300 GHz/350 GHz/1.85 V (Fox et al., 2008) [1]. A key feature of the HBT module is a connection of the extrinsic and intrinsic base regions by lateral epitaxial overgrowth, which aims to overcome the limits of the conventional double-polysilicon architecture in simultaneously reducing RB and CBC. Potential benefits and barriers of the proposed device structure on the way to higher performance are reviewed with regard to the recently demonstrated performance gain of the classical double-polysilicon approach. The paper addresses technological challenges one is faced when the here presented device structure is scaled to minimum device dimensions. 相似文献
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建立了SiGe HBT热电反馈模型,对基区Ge组分矩形分布、三角形分布和梯形分布的SiGe HBT的热特性进行研究。结果表明,在Ge总量一定的前提下,Ge组分为三角形和梯形分布结构的SiGe HBT峰值温度较低、温差较小,温度分布的均匀性优于Ge组分矩形分布结构的SiGeHBT,具有更好的热特性。对不同Ge组分分布下器件增益与温度的依赖关系进行研究,发现当基区Ge组分为三角形和梯形分布时,随着温度升高,器件增益始终低于Ge组分矩形分布的器件,且增益变化较小,提高了器件的热学和电学稳定性,扩大了器件的应用范围。 相似文献