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1.
The determination of impurities in titanium dioxide pigments, such as Al, Cd, Cr, Fe, Mn, P, Zn and Zr, is relevant because trace elements affect pigment properties. The critical step in the analysis of this pigment is the conversion of the solid sample to a representative solution. This study compared four acid decomposition procedures for TiO2 for the determination of Al, P and trace impurities using inductively coupled plasma optical emission spectrometry. The decomposition procedures investigated involved acid digestion with: (i) (NH4)2SO4/H2SO4; (ii) HF/H2SO4; (iii) H3PO4; and (iv) HCl/HNO3/HF. This latter mixture was tested in a microwave-assisted procedure with closed vessels. Comparing the procedures using conventional conductive heating, the procedure using (NH4)2SO4/H2SO4 was the most suitable for complete decomposition of TiO2 samples, requiring approximately 30 min. Applying a paired t-test, it was shown that all strategies led to results in agreement at a 95% confidence level with those obtained using X-ray fluorescence. The accuracy for Cr, Fe, P and Zr was also checked using a certified reference material, and again all results were in agreement at a 95% confidence level. The performance of two ICP-OESs, one based on a mini-torch using a radial view configuration, and the other based on an axial view configuration, were compared. Both plasmas are intensely affected by matrix constituents. The mini-torch plasma is less able to cope with high amounts of solids; however this parameter also negatively affects the background level when using axial-viewed ICP-OES.  相似文献   

2.
The dominant chemical reaction kinetics occurring in the plasma environment are studied by small periodic power modulation and analyzed using transfer functions. A CF4/Ar rf plasma at 500 mTorr was chosen to validate this experimental methodology because the kinetics of the CF, system have been well studied previously.(1) The experimental results demonstrated that the modulation technique can determine dominant reactions in the plasma. The experimental results also confirmed the importance of surface recombination reactions and provided quantitative total sticking coefficients for F, CF2 and CF: F=0.02, CF2=0.05, and CF0.20. The results also indicated that an activated intermediate may be a precursor to the formation of both CF2 and CF from CF4. Energetic considerations and excited-.state lifetime calculations suggest that this activated intermediate may be an internally excited CF3* radical.  相似文献   

3.
The effects and benefits of N2 addition to the central channel of the ICP through the nebulizer gas used in ICP OES with axial view configuration were investigated in the present study. The N2 flow rate, nebulizer gas flow rate, RF power and sample uptake rate were evaluated and compared for two sample introduction systems (pneumatic nebulization/aerosol desolvation and conventional pneumatic nebulization). It was observed that N2 did not affect solution nebulization and aerosol transport but affects the ICP characteristics. The higher thermal conductivity of N2 (in comparison with Ar) changes energy distribution in the ICP, observed by monitoring the signals of Ar emission lines and sodium emission. The ratio Mg(II)-280.270 nm/Mg(I)-285.213 nm was utilized as a diagnostic tool for plasma robustness. The addition of N2 (20 mL min−1) increased plasma robustness significantly and mitigated effects caused by Na, K and Ca. For 40 spectral lines evaluated, it was observed that the emission signals of ionic spectral lines were in general more affected by N2 than those of atomic spectral lines. Detection limits, precision, sensitivity and linearity of calibration curves obtained using N2-Ar-ICP were almost similar to those obtained using Ar-ICP. The analysis of 5 different reference materials revealed that accuracy was not degraded by adding N2 to the Ar-ICP.  相似文献   

4.
Reaction rate coefficients have been measured at 295 K for both CF3 and CF2 with atomic and molecular fluorine. The reaction between CF3 and F was studied over a gas number density range of (2.4–23)×1016 cm–3 with helium as the bath gas. The measured rate coefficient increased from (1.1–1.7)×10–11 cm3 s–1 as the gas number density increased over this range. In contrast to this relatively small change in rate coefficient with gas number density, the rate coefficient for CF2+F increased from (0.4–2.3)×10–12 cm3 s–1 as the helium gas number density increased from (3.4–28.4)×1016 cm–3. Even for the highest bath gas number density employed, the rate coefficient was still more than an order of magnitude lower than earlier measurements of this coefficient performed at comparable gas number densities.Both these association reactions are examined from the standpoint of the Gorin model for association of radicals and use is made of unimolecular dissociation theory to examine the expected dependence on gas number density. The calculations reveal that CF3+F can be explained satisfactorily in these terms but CF2+F is not well described by the simple Gorin model for association.CF3 was found to react with molecular fluorine with a rate coefficient of (7±2)×10–14 cm3 s–1 whereas only an upper limit of 2×10–15 cm3 s–1 could be placed on the rate coefficient for the reaction between CF2 and F2. The values obtained for this set of reactions mean that the reaction between CF3 and F will play an important role in plasmas containing CF4. The high rate coefficient will mean that, under certain conditions, this particular reaction will control the amount of CF4 consumed. On the other hand, the much lower rate coefficient for reactions between CF2 and F means that CF2 will attain much higher concentrations than CF3 in plasmas where these combination reactions are dominant.  相似文献   

5.
Carbon‐like nanofiber (CNF) is synthesized using microwave plasma‐enhanced chemical vapor deposition. We present the effects of fluorocarbon and oxygen (CF4/O2) plasma‐treated on the microstructural, crystal, and field emission (FE) characteristics of CNF by SEM, transmission electron microscopy, micro‐Raman, and FE system. Results showed that the presence of the damaged CNF occurs at 2 min CF4/O2 plasma treatment and some amorphous carbon particles after 10 min CF4/O2 plasma treatment. One can also observe that turn‐on fields were enhanced (2.75 uA/cm2) at 2 min CF4/O2 plasma treatment; this indicates a remarkable FE enhancement of the local emission region in CNFs. Complementary information was obtained by thermal desorption atmospheric pressure ionization mass spectrometry and XPS. It can be found that the broken surface morphologies could be attributed to the chemical reaction exchanged via plasma excitation; a large number of bonding (C–F and C–O) in the CNF was detected. In addition, it is observed that the CNF has higher fluorine desorbed at 277.5 and 427 °C after CF4/O2 plasma treatment. Copyright © 2012 John Wiley & Sons, Ltd.  相似文献   

6.
A self-consistent, one-dimensional simulator for the physics and chemistry of radio frequency (rf) plasmas was developed and applied for CH4 and CF4. The simulator consists of a fluid model for the discharge physics, a commercial Boltzmann equation solver for calculations of electron energy distribution fuction (EEDF), a generalized plasma chemistry code, and an interface module among the three models. The CH4 and CF4 discharges are compared and contrasted: CH4 plasmas are electropositive, with negative ion densities one order of magnitude less than those of electrons, whereas CF4 plasmas are electronegative, with ten times more negative ions than electrons. The high-energy tail of tire EEDF in CH4, lies below both the Druyvensteyn and Maxwell distributions, whereas tire EEDF high-energy tail in CF4 lies between the two. For CH4, the chemistry model was applied for four species, namely, CH4 CH3 CH2, and H, whereas for CF4, five species were examined namely CF4, CF3, CF2, CF, and F The predicted densities and profiles compare favorably with experimental data. Finally, the chemistry results were fedback into the physics model until convergence was obtained.  相似文献   

7.
A 2.45 GHz low power microwave microstrip plasma (MSP) exiting the wafer and operated with Ar at atmospheric pressure was used for the optical emission spectrometric determination of Hg with the aid of a miniaturized optical fiber spectrometer with a CCD detector and the cold vapor (CV) generation technique using NaBH4 and SnCl2 as reductants. The experimental conditions were optimized with respect to the relative intensity of the Hg I 253.6 nm line and its signal-to-background intensity ratio (SBR). So as to understand the results of the optimization experiments, the excitation temperatures as measured from Ar I lines (T exc) and the electron number densities (n e) for the Ar MSP loaded with Hg vapors were determined and found to be in the range from 5500 to 6300 K and from 1.4 to 2.0 × 1014 cm−3, respectively. Under the optimized conditions, the detection limit for Hg of the CV-MSP-OES using SnCl2 as the reducing agent was found to be much lower (0.11 ng mL−1) than in the case where NaBH4 was used (9 ng mL−1). The linearity range was found to be up to 1 μg mL−1 while the precision was of the order of 0.7–5%. The procedure with SnCl2 as reductant was used for the determination of Hg at a concentration of 0.2 μg mL−1 in synthetic water samples containing 1 to 4% (m/v) of NaCl with an accuracy of 3% as well as in a solution of the domestic sludge standard reference material (NIST SRM 2781) with a certified concentration for Hg of 3.64 ± 0.25 μg g−1 for which 3.55 ± 0.41 μg g−1 was found. Correspondence: J. A. C. Broekaert, Institut für Anorganische und Angewandte Chemie, Universit?t Hamburg, 20146 Hamburg, Germany  相似文献   

8.
Plasma-chemical reduction of SiCl4 in mixtures with H2 and Ar has been studied by optical emission spectroscopy (OES) and laser interferometry techniques. It has been found that the Ar:H2 ratio strongly affects the plasma composition as well as the deposition (r D) and etch (r E) rates of Si: H, Cl films and that the electron impact dissociation is the most important channel for the production of SiClx species, which are the precursors of the film growth. Chemisorption of SiClx and the reactive surface reaction SiClx+H–SiCl(x–1)0+HCl are important steps in the deposition process. The suggested deposition model givesr D [SiClx][H], in agreement with the experimental data. Etching of Si: H, Cl films occurs at high Ar: H2 ratio when Cl atoms in the gas phase become appreciable and increases with increasing Cl concentration. The etch rate is controlled by the Cl atom chemisorption step.  相似文献   

9.
The rate constants of the hydrogen abstraction reactions of CF3CHFCF3 + H (R1) and CF3CF2CHF2 + H (R2) have been calculated by means of the dual-level direct dynamics method. Optimized geometries and frequencies of stationary points and extra points along the minimum-energy path (MEP) are obtained at the MPW1K/6-311+G(d,p) level, and the classical energetic information is further corrected with the interpolated single-point energy (ISPE) approach by the G3(MP2) level of theory. Using the canonical variational transition state theory (CVT) with small-curvature tunneling corrections (SCT), the rate constants are evaluated over a wide temperature range of 200-2000 K. The calculated CVT/SCT rate constants are in good agreement with available experimental values. It is found that the variational effect is very small and almost negligible over the whole temperature region. However, the small-curvature tunneling correction plays an important role in the lower temperature range. Furthermore, the heats of formation of species CF3CF2CHF2 (SC1 or SC2) and CF3CF2CF2 are studied using isodesmic reactions to further elucidate the thermodynamic properties.  相似文献   

10.
Laser-induced breakdown spectroscopy of helium plasma, initially at room temperature and pressures ranging from 12 to 101 kPa was investigated using a transverse excitation atmospheric CO2 pulsed laser (λ = 9.621 and 10.591 μm, a full width at half maximum of 64 ns, and an intensity from 1.5 to 5.36 GW cm−2). The helium breakdown spectrum is mainly due to electronic relaxation of excited He, He+ and H. Plasma characteristics were examined in detail on the emission lines of He and He+ by the time-integrated and time-resolved optical emission spectroscopy technique. Optical breakdown threshold intensities, ionization degree and plasma temperatures were obtained. An auxiliary metal mesh target was used to analyze the temporal evolution of the species in the plasma. The results show a faster decay of the continuum emission and He+ species than in the case of neutral He atoms. The velocity and kinetic energy distributions for He and He+ species were obtained from time-of-flight measurements. Electron density in the laser-induced plasma was estimated from the analysis of spectral data at various times from the laser pulse incidence. Temporal evolution of electron density has been used for the estimation of the three-body electron-ion recombination rate constant.  相似文献   

11.
The deposition of diamondlike carbon (DLC) film and the measurements of ionic species by means of mass spectrometry were carried out in a CH4/N2 RF (13.56 MHz) plasma at 0.1 Torr. The film deposition rate greatly depended on both CH4/N2 composition ratio and RF power input. It was decreased monotonically as CH4 content decreased in the plasma and then rapidly diminished to negligible amounts at a critical CH4 content, which became large for higher RF power. The rate increased with increasing RF power, reaching a maximum value in 40% CH4 plasma. The predominant ionic products in CH4/N2 plasma were NH+ 4 and CH4N+ ions, which were produced by reactions of hydrocarbon ions, such as CH+ 3, CH+ 2, CH+ 5, and C2H+ 5 with NH3 molecules in the plasma. It was speculated that the production of NH+ 4 ion induced the decrease of C2H+ 5 ion density in the plasma, which caused a reduction in higher hydrocarbon ions densities and, accordingly, in film deposition rate. The N+ 2 ion sputtering also plays a major role in a reduction of film deposition rate for relatively large RF powers. The incorporation of nitrogen atoms into the bonding network of the DLC film deposited was greatly suppressed at present gas pressure conditions.  相似文献   

12.
The use of a so-called trihedral and a T-shaped cross-flow pneumatic nebulizer with dual solution loading for inductively coupled plasma optical emission spectrometry has been studied. By these devices analyte clouds from two solutions can be mixed during the aerosol generation step. For both nebulizers the correction of matrix effects using internal standardization and standard addition calibration in an on-line way was investigated and compared to elemental determinations using a conventional cross-flow nebulizer and calibration with synthetic standard solutions without matrix matching. A significant improvement of accuracy, both for calibration with internal standardization and standard addition, was obtained in the case of four synthetic solutions containing each 40 mmol L− 1 Na, K, Rb and Ba as matrix elements and 300 μg L− 1 Cd, Co, Cr, Cu, Fe, Mn, Ni and Pb as analytes. Calibration by standard addition in the case of dual solution loading has been shown to be very useful in the determination of elements at minor and trace levels in steel and alumina reference materials. The results of analysis for minor concentrations of Cr, Cu and Ni in steel as well as for Ca, Fe, Ga, Li, Mg, Mn, Na, Si and Zn in alumina powder certified reference materials subsequent to sample dissolution were found to be in good agreement with the certificates. Limits of detection were found to be only slightly above those for a conventional cross-flow nebulizer and a precision better than 3% was realized with both novel nebulizers.  相似文献   

13.
The spectroscopic emission intensities from excited F atoms in SF6-O2 discharges at 1 torr have been correlated to the densities of atoms in their ground electronic state by measuring the excitation efficiencies of the electrons in the energy range 11 to 17 eV with a method which essentially consists in the analysis of the emission of Ar or N2, added as actinometer gases to the discharge mixtures. The general applicability of the method has been tested by a direct titration of F atoms with chlorine. The spectroscopic analysis has allowed the determination of useful information on the trends of both the electron densities and their energies as a function of the oxygen percent in the feed.  相似文献   

14.
The potential energy surface for the CF3O2 + OH reaction has been theoretically investigated using the DFT (B3LYP/6-311G(d,p)) level of theory. Both singlet and triplet potential energy surfaces are investigated. The reaction mechanism on the triplet surface is simple. However, the reaction mechanism on the singlet surface is more complicated. It is revealed that the formation of CF3O + HO2 is the dominant channel on the triplet surface. The potential energy surface (PES) for this reaction has been given according to the relative energies calculated at the DFT/B3LYP/6-311G(d,p) level. Because this reaction involves both triplet and singlet states, triplet–singlet intersystem crossing (ISC) crossing also have been investigated in this paper.  相似文献   

15.
A parametric study of the etching of Si and SiO2 by reactive ion etching (RIE) was carried out to gain a better understanding of the etching mechanisms. The following fluorocarbons (FCs) were used in order to study the effect of the F-to-Cl atom ratio in the parent molecule to the plasma and the etching properties: CF4, CF3Cl, CF2Cl2, and CFCl3 (FC-14, FC-13, FC-12, and FC-11 respectively). The Si etch rate uniformity across the wafer as a function of the temperature of the wafer and the Si load, the optical emission as a function of the temperature of the load, the etch rate of SiO2 as a function of the sheath voltage, and the mass spectra for each of the FCs were measured. The temperature of the wafer and that of the surrounding Si load strongly influence the etch rate of Si, the uniformity of etching, and the optical emission of F, Cl, and CF2. The activation energy for the etching reaction of Si during CF4 RIE was measured. The etch rate of Si depends more strongly on the gas composition than on the sheath voltage; it seems to be dominated by ion-assisted chemical etching. The etching of photoresist shifted from chemical etching to ion-assisted chemical etching as a function of the F-to-Cl ratio and the sheath voltage. The etch rate of SiO2 depended more strongly on the sheath voltage than on the F-to-Cl ratio.  相似文献   

16.
A new method has been developed for following the interaction between zinc ion and human serum albumin (HSA) by capillary electrophoresis-inductively coupled plasma optical emission spectrometry. Under optimized experimental conditions, the detection limit (3σ) for free Zn2+ ion was found to be 1.34 μM by running 11 replicates of the reagent blank. The RSD was less than 3% and the recovery was more than 98.13%. The linear range of zinc ion concentration was between 5.1 μM and 0.3 M. The measured Zn(II)-HSA combination values of n1 and K1 for primary binding of Zn2+ to HSA were 1.09 and 2.29 × 105 L mol−1, respectively. The measured values of n2 and K2 for the non-specific binding of Zn2+ to HSA were 8.96 and 6.65 × 103 L mol−1, respectively. This new method allows rapid analysis of a small amount of sample, simple operation, while avoiding long periods of dialysis and eliminating interference from other metal ions. This method provides a reliable and convenient new way for studying interactions between metal ions and biomolecules.  相似文献   

17.
Continuous flow generation of Br2, Cl2 and H2S coupled to a low-power 2.45 GHz microwave microstrip He plasma exiting from a capillary gas channel in a micro-fabricated sapphire wafer with microstrip lines has been used for the optical emission spectrometric determination of Br, Cl and S using a miniaturized optical fiber CCD spectrometer. Under optimized conditions, detection limits (3σ) of 330, 190 and 220 μg l− 1 for Br, Cl and S, respectively, under the use of the Br II 478.5 nm, Cl I 439.0 nm and S I 469.0 nm lines were obtained and the calibration curves were found to be linear over 2 orders of magnitude. In addition, when introducing CO2 and using the rotational line of the CN molecular band at 385.7 nm the detection limit for C was 4.6 μg l− 1. The procedure developed was found to be free from interferences from a number of metal cations and non-metal anions. Only the presence of CO32− and CN was found to cause severe spectral interferences as strong CN and C2 molecular bands occurred as a result of an introduction of co-generated CO2 and HCN into the plasma. With the procedure described Br, Cl and S could be determined at a concentration level of 10–30 mg l− 1 with accuracy and precision better than 2%.  相似文献   

18.
We are reporting observations of positive and negative variations of emission line intensities during the determination of boron and titanium in biological matrices by axial view inductively coupled plasma optical emission spectrometry with segmented charge-coupled device detection. The study included the testing of several elements (yttrium, palladium and platinum) and analytical wavelengths for internal standardization, aiming to compensate for variations in signal recovery due to matrix interferences. Human albumin was chosen as principal matrix component to assess the effect of variable chemical and instrumental operating conditions on boron response. A parametric study was performed by considering the application of two different nebulizer–aerosol chamber systems, the effect of plasma operating conditions on analyte and internal standard signals and the influence of common blood plasma electrolytes, added as salts of alkaline or alkaline earth elements. The pneumatic injection systems tested were a standard cross-flow nebulizer with a Scott type spray chamber and a concentric Meinhard type device coupled to a glass cyclonic spray chamber. The change from standard (i.e. medium RF power and relatively high aerosol carrier gas flow rate) to robust (i.e. higher RF power and lower carrier gas flow rate) conditions contributed to large, non-correlated variations in boron intensities and in some of the analyte/internal standard ratios. Significant memory effects were observed for injection of boron solutions prepared with boric acid and containing small amounts of acid, but those effects were negligible when the boron carrier compound was boronophenylalanyne. The injection of titanium solutions did not produce analyte carry-over effects. When internal standards were employed, a less effective signal compensation was consistently observed for boron at higher albumin concentrations when the difference in energies of the lines was between 4.5 and 6 eV. This effect was enhanced for some line pairs when robust conditions are employed. Differences in the response between nebulizers were minor, with a slight advantage in sensitivity for the cross-flow/Scott system. Yttrium was found to be useful for signal compensation in the determination of boron and titanium in blood and human plasma provided that the equivalent concentration of albumin in the nebulized sample dilutions was kept below 0.2% w/v. Simultaneous measurement of a reference strontium line was found to be useful as an additional verification of the response of yttrium as internal standard.  相似文献   

19.
The experiments are carried out in the system of continuous flow reactors with dielectric-barrier discharge (DBD) for studies on the conversion of natural gas to C2 hydrocarbons through plasma catalysis under the atmosphere pressure and room temperature. The influence of discharge frequency, structure of electrode, discharge voltage, number of electrode, ratio of H2/CH4, flow rate and catalyst on conversion of methane and selectivity of C2 hydrocarbons are investigated. At the same time, the reaction process is investigated. Higher conversion of methane and selectivity of C2 hydrocarbons are achieved and deposited carbons are eliminated by proper choice of parameters. The appropriate operation parameters in dielectric-barrier discharge plasma field are that the supply voltage is 20–40 kV (8.4–40 W), the frequency of power supply is 20 kHz, the structure of (b) electrode is suitable, and the flow of methane is 20–60 mL · min−1. The conversion of methane can reach 45%, the selectivity of C2 hydrocarbons is 76%, and the total selectivity of C2 hydrocarbons and C3 hydrocarbons is nearly 100%. The conversion of methane increases with the increase of voltage and decreases with the flow of methane increase; the selectivity of C2 hydrocarbons decreases with the increase of voltage and increases with the flow of methane increase. The selectivity of C2 hydrocarbons is improved with catalyst for conversion of natural gas to C2 hydrocarbons in plasma field. Methane molecule collision with radicals is mainly responsible for product formation.  相似文献   

20.
A continuous flow thin layer electrolysis cell with a Pt cathode in combination with a microwave plasma torch operated with Ar as working gas was used for the optical emission spectrometric determination of As with the hydride technique. Under the optimised conditions the limit of detection (3σ) in the case of the As(I) 228.81 nm emission line was 81 ng mL?1. Especially the influence of the transition metals Cu(II), Fe(III) and Ni(II), of the hydride forming elements Sb(III), Se(IV) and Sn(II) and of Na on the determination of As was studied. Cu(II) was found to be the strongest interferent, as in the presence of 100 µg mL?1 of Cu(II) the signal for 3 µg mL?1 of As was reduced to 4% of the signal without interferent. Sn(II) and Sb(III) were found to yield an increase of the signal for As. L-cysteine and KI/ascorbic acid (1 : 1) at a concentration of 2% were found effective to reduce the interferences of Cu(II), Fe(III) and Ni(II). For a solution containing 3 µg mL?1 of As and 100 µg mL?1 of Ni(II) it was shown that in the presence of L-cysteine or KI/ascorbic acid the signal for As was 99% and 94% of the one without interferent, whereas it was only 43% without masking reagents. The procedure could be used for the determination of As in a digested coal fly ash standard reference material (NIST SRM 1633a®) with a certified value of 145 ± 15 µg g?1 for As. A concentration of 131 ± 15 µg g?1 was found. Additionally, As could be determined in two process water samples from a copper refinery. It was found that the amount of As determined with ECHG-MPT-OES agrees well with the values determined by FAAS and ICP-OES at the 0.02 and 1.6 g L?1 level, respectively.  相似文献   

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