自锁模Cr^4＋：YAG激光器的色散补偿研究

从棱镜对补偿色散的原理出发，介绍了Cr^4 ：YAG锁模激光器中色散补偿的特点，发现熔融石英作为色散补偿元件，不仅可以完全补偿二阶色散，而且三阶色散也得到了一定的补偿，并得到了脉冲宽度最小为65fs，中心波长为1520nm，重复频率为120MHz的脉冲序列。     

用于固体自锁模的三元腔激光器的二阶、三阶色散的解析表示

给出在任意角度切割情况下,三元腔固体自锁模激光器二阶、三阶色散的解析表示,并系统地计算了切割角度、材料等因素的变化对二阶、三阶色散的影响.该计算为三元腔固体自锁模激光器的设计提供了理论依据. 关键词： 三元腔 二阶色散 三阶色散     

激光二极管泵浦Nd：FAP激光器

报道激光二极管泵浦的掺钕氟磷酸钙固体激光器，该器件在重复频率为１００Ｈｚ的准连续状态下运行，当耦合输出透过率为８％时，得到３１％的斜效率，比较了ＦＡＰ和ＹＡＧ这两种介质的激光器的性能，理论分析得出的两者的阈值泵浦功率的相对值与实验结果相一致，并证实ＦＡＰ是一种有前途的适合激光二极管泵浦的激光介质。     

半导体激光器输出功率的线性特性研究

本文从理论上研究了半导体激光器输出功率的线性特性.通过求出半导体激光器多模速率方程组的隐式解析解,我们获得了半导体激光器输出功率对电流的一阶至三阶导数的解析表达式.在此基础上,我们模拟了半导体激光器的输出功率和输出功率对电流的一阶至三阶导数随电流的变化曲线.     

采用双石英棱镜对的掺钛蓝宝石自锁模激光器

给出了双棱镜对二、三阶色散的解析式。报道了采用双石英棱镜对的掺钛蓝宝石自锁模激光器的实验结果，获得与理论分析一致的结论。     

Cr^4＋：YAG调Q特性的理论和实验研究

从理论和实验两个方面研究Ｃｒ＾４＋：ＹＡＧ的调Ｑ特性，测量了Ｃｒ＾４＋：ＹＡＧ调ＱＮｄ＾３＋：ＹＡＧ激光器在不同条件下脉冲能量和脉冲宽度，并与理论结果进行比较，结果显示脉冲能量的理论结果与实验结果能较发地符合，脉冲工的理论结果与实验结果变化趋势大致相一致，文中还对Ｃｒ＾４＋：ＹＡＧ调ＱＮｄ＾３＋：ＹＡＧ激光器的其它实验现象给出定性解释。     

自锁模Cr4+∶YAG激光器的色散补偿研究

从棱镜对补偿色散的原理出发,介绍了Cr4+∶ YAG锁模激光器中色散补偿的特点,发现熔融石英作为色散补偿元件,不仅可以完全补偿二阶色散,而且三阶色散也得到了一定的补偿,并得到了脉冲宽度最小为65 fs,中心波长为1520 nm,重复频率为120 MHz的脉冲序列.     

石墨烯被动锁模全正色散掺镱光纤激光器中的暗脉冲及其谐波

报道了一种基于石墨烯被动锁模的全正色散掺镱环形光纤激光器. 在激光器腔中应用激光诱导沉积法制备的石墨烯可饱和吸收体, 通过调节抽运光功率和偏振控制器的角度分别得到了明脉冲及其二阶谐波, 暗明脉冲对和暗脉冲及其二、三阶谐波这三类不同的脉冲. 其中, 暗明脉冲对和暗脉冲在基于石墨烯被动锁模的掺镱光纤激光器实验中都是第一次被观察到. 本文根据实验结果结合模拟分析了暗脉冲的产生机理, 并研究对比了明脉冲谐波和暗脉冲谐波产生的原因.     

TEACO2激光器中气体组分对放电状态的影响

采用自制实时取样系统及四极质谱仪测量ＴＥＡＣＯ２激光器放电过程中气体组分变化，分析了测量结果对ＴＥＡＣＯ２激光器放电状态的影响。     

激光二极管泵浦NYAB激光器的空间分布速率方程的研究

报道了用以描述激光二极管泵浦ＮＹＡＢ连续激光顺空间分布特性的非线性耦合的速率方程组，和以此方程组进行的理论计算，讨论了泵浦光和激光的空间分布、晶体的最佳长度、输出镜的最佳透过率对激光器输出的影响，给出了ＮＹＡＢ激光器设计的一些依据。     

非线性增益和波导结构对半导体激光器的谱线宽度的作用

本文采用半经典理论研究了非线性增益和波导结构对量子相位噪声引起的模式谱线增宽过程的作用,得出谱线宽度不但与线性增益而且与三阶增益有关,并且都受到波导结构的制书。从而提出新的谱线增宽因子和与功率无关的线宽的新机制。 关键词：     

Harmonic and intermodulation distortions and noise associated with two-tone modulation of high-speed semiconductor lasers

We present results of modeling and simulation of the harmonic and intermodulation distortions as well as the intensity noise of high-speed semiconductor lasers under two-tone modulation. Multiple quantum-well lasers are considered, which are characterized by large differential gain and a modulation bandwidth of about 25GHz. The study is based on the rate equation model of semiconductor lasers excited by injection current with two sinusoidal tones separated by a radio frequency. The modulated laser signal is modeled in both the time and frequency domains. The time domain characteristics include the fluctuating waveform, while the frequency domain characteristics include the frequency spectrum of the relative intensity noise (RIN), carrier-to-noise ratio, modulation response, harmonic distortion, and the second- and third-order intermodulation distortions (IMD2 and IMD3). The analysis is performed for three frequencies of 5, 15, and 24 GHz, which are, respectively, lower, comparable, and higher than the laser relaxation frequency. The range of the modulation depth covers the regimes of small and large-signal modulation. We show that both RIN and IMD3 of two-modulated laser are minimum when the modulation frequency is 5GHz, and maximum when the modulation frequency is 24 GHz. The second-order harmonic distortion, IMD2, and IMD3 values are larger in the vicinity of relaxation oscillations and increase with the modulation index, especially under large-signal modulation.     

半导体光放大器非线性失真特性实验研究

对半导体光放大器（SOA）用于1 310 nm残留边带幅度调制（AM-VSB）视频光信号放大时的非线性失真特性进行了实验研究.分析了非线性失真机理.给出了当输入光信号波长位于SOA增益谱下降沿且输入光信号功率较大时,SOA所引入的非线性失真主要由其增益随输入光信号功率变化而波动所造成的结论和对应表达式.提出了减小非线性失真的方法.设计了适合于AM-VSB视频光信号放大的SOA并用于有线电视（CATV）系统实验.研究结果表明,在300 mA的工作电流下,SOA在载频647.25 MHz处引入的组合二阶互调失真（CSO）在－42 dB～－38 dB之间,并随输入光信号功率的增加而变大.     

Holographic optical elements (HOE) for semiconductor lasers

A two step method is described to produce off-axis holographic lenses with high diffraction efficiency and without astigmatism for semiconductor lasers. The hologram is recorded in the visible (514 nm) and reconstructed in the infrared (800 nm). The principal parameters (recording and reconstruction angles, astigmatic focal lengths) for each hologram and wavelength are calculated analytically using second order approximation. Numerical methods, based on classical ray-tracing applied to holographic diffraction, have been developed to calculate spot diagrams and to investigate the effects of higher order aberrations.     

Static and dynamic bifurcations in semiconductor lasers for device applications

The properties of semiconductor lasers are reviewed within the framework of bifurcation theory and presented as a means for constructing new devices. Static bifurcations are shown to be related to two forms of non-reciprocity. One case of non-reciprocity is found to be analogous to effects in other non-linear waveguides; the second form appears to be novel. Dynamic bifurcations are considered in relation to delay-induced instabilities with particular attention given to multiple time-delay effects. The potential for exploiting properties of systems near bifurcations is examined and shown to be of great applications potential. The role to be played by semiconductor lasers in deepening knowledge of dynamic systems is indicated.     

Energy and elastic constants of lithium and aluminium

In the proposed model of the fourth order in the pseudopotential including the distortion effects of Fermi surface and the energies of the ground state, elastic constants of the second and third orders of lithium and aluminium are calculated. The agreement with the experiment is rather better than in the second order models.     

纳米孔径激光器出射孔径设计

采用三维时域有限差分（FDTD）方法计算和比较了不同形状和尺寸的纳米孔径半导体激光器的近场分布特性，结果表明采用C形孔径设计可使纳米孔径激光器的输出光强最大值比方孔和圆孔提高了3－4个数量级，通光效率也会有显著提高而聚焦光斑尺寸基本不变。并提出C形孔在孔径尺寸为1／3波长左右时输出光场分布最优。纳米孔径激光器可用于超高密度近场光存储、近场光学超衍射分辨成像、纳米光刻等。     

Square microcavity semiconductor lasers

Square microcavities, which support whispering-gallery modes with total internal reflections, can be employed as high-quality laser resonators for fabricating compact, low-threshold semiconductor lasers. In this paper, we review the recent progress of square microcavity semiconductor lasers. The characteristics of confined optical modes in the square microcavities are introduced briefly. Based on the mode properties of the square microcavities, dual-mode lasers with tunable wavelength intervals are realized for generating microwave signals. Furthermore, deformed square microcavity lasers with the sidewalls replaced by circular sides are proposed and experimentally demonstrated to enhance the mode confinement and increase the dual-mode interval to the THz range. In order to further reduce the device size, metal-confined wavelength-scale square cavity lasers are also demonstrated.     

大功率半导体激光器发展及相关技术概述

激光被称为"最快的刀"、"最准的尺"、"最亮的光",与原子能、计算机、半导体并称为20世纪新四大发明.大功率半导体激光器在工业加工、医疗美容、光纤通信、无人驾驶、智能机器人等方面有着广泛的应用.如何实现大功率半导体激光光源,一直以来都是国际的研究前沿和学科热点.为此,简述了大功率半导体激光器的发展历史,综述了大功率半导...     

Absorptive and dispersive bistability in semiconductor injection lasers

Recent progress in the study of both absorptive and dispersive bistability in semiconductor injection lasers is reported. Inhomogeneously excited semiconductor lasers as an absorptive case, and laser diode optical amplifiers and optical injection locking systems of laser diodes as dispersive cases, are described. Applications of bistable semiconductor lasers, such as optical memories, optical regenerative amplifiers and all-optical switching, are also discussed.