Effect of irradiation on CsNO3, RbNO3., and NaNO2 crystal structure

Studies of the structure changes in heated (20–200°C) and γ –irradiated (10⁹- 5×10⁹ R, E = 1.3 Mev, Tirrad. = 40°C) crystals CsNO₃, RbNO₃ and NaNO₂ have been carried out by means of X-ray diffraction methods. The investigation of temperature effect on the crystal structure has shown that the phase transformation in CsNO₃ and NaNO₂ are of continuous type while that in RbNO₃ is discontinuous. It has been found that crystal structures of CsNO₃ and NaNO₂ change under irradiation in the same way, as they change under heating, No changes of RbNO₃ crystal structure caused by irradiation have been found. Experimental results agree with an assumption that radiation-induced structure changes of high-temperature type can be observed only in the compounds, the phase transition of which is of continuous type.     

The contribution of anion disorder to ionic conductivity on single crystals of β-PbF2

The effect of the different cooling processes on the disorder of flourine ions and ionic conductivity in β-PbF₂ has been studied by X-ray method and ionic conductivity measurements on single crystals below the transition temperature T_c. The spike-like diffuse scattering was observed along the <111>¹ directions around the Bragg reflections. The activation energies for the conduction process are 0.40 eV for the sample quenched from 970 K and 0.54 eV for the one from 720 K. The higher the quenching temperature is, the higher the conductivity and the lower the activation energy become. The dependence of conductivity on the different cooling processes is more evident in single crystals than in polycrystalline samples. The contribution of the different cooling processes to ionic conductivity can be quantitatively explained by the extent of ordering of mobile fluorine ions. Time dependence of ionic conductivity has not been observed.     

Electrical conductivity studies of cobalt-precipitation in RbCl crystals

The results of electrical conductivity measurements in heavily doped RbCl:CoCl₂ crystals with 2500 and 6000 ppm of cobalt are being reported in this paper. The different regions of the conductivity plots for the crystals with the two concentrations of cobalt have been explained and relevant energy parameters determined. The crystals with 6000 ppm of cobalt have been found to contain two types of precipitates one of these being of the same type as that existing in RbCl crystals with 2500 ppm of cobalt while the other being of a different composition. Further, it has been found that the crystals appear blackened after heating during measurements. The blackening has been attributed to the expulsion of cobalt from the bulk of the crystal which forms an oxide at the surface.     

Low-temperature phase transition in Ba2TiGe2O8

Previous work on Ba₂TiGe₂O₈ crystals has shown an unusual low-temperature (～ 223 K on cooling, ～ 273 K on heating) phase transition. Precession x-ray photographs on Ba₂TiGe₂O₈ single crystals show an incommensurate modulation along b*, and, for the first time, also along a*. Single crystal intensity data confirm the average structure in space group Cmm2. There is positional disorder in the pyrogermanate groups, and this is the probable cause for the modulated structure. The low-temperature phase transition is proposed to be a lock-in transition, with the modulation along a* locking in at a value of 1/3. Several properties, as well as other unusual features of the low-temperature phase transition, are discussed in light of the proposed lock-in transition. Domain studies show that the ferroelastic domains are unstable in the low-temperature phase.     

Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals

The dependences of the permittivity and electrical conductivity of TlInS₂ and TlGaS₂ single crystals on the temperature and electron beam irradiation dose have been studied. It has been established that, as the electron irradiation dose increases, the electrical conductivity σ significantly increases, whereas the permittivity ? decreases over the entire temperature range covered (80–320 K). It has been shown that anomalies in the form of maxima in the temperature dependences σ(T) and ?(T) are observed in the regions characteristic of phase transitions in TlInS₂. Irradiation of the TlInS₂ and TlGaS₂ crystals with electrons to doses of 10¹⁵ and 10¹⁶ cm^?2 does not affect their phase transition temperatures. The dispersion curves of the permittivity ? of the TlGaS₂ crystal have been constructed.     

使用CNDO/S型近似方法计算NaNO2晶体的倍频系数

本文使用CNDO/S型近似方法,计算(NO₂)^-1的单电子分子轨道,然后按基团理论的通用计算程序计算NaNO₂晶体的倍频系数,计算值和实验值符合得较好,计算结果明确指出:NaNO₂晶体倍频系数各向异性的原因来自基团的共轭π轨道,另外,本文的计算表明,有可能对非线性光学新材料探索提供计算机的预测。本文还就非线性光学效应的双能级模型作了讨论,并指出了它的局限性。 关键词：     

Thermo-and photostimulated depolarization in self-compensated CdF2:Ga and CdF2:In crystals

A study is reported of the conductivity of CdF₂ semiconductor crystals doped by indium and gallium donor impurities and residing in a semi-isolated state. The latter results from self-compensation of the impurities, in the course of which one half of them creates two-electron DX centers, and the second is ionized. Photo-and thermostimulated depolarization of these crystals has been studied. It was shown that the observed polarization/depolarization phenomena have a nonlocal nature and are due to the charges present in these crystals changing their positions. These changes may be formally considered as charge displacement to macroscopic distances considerably in excess of the interatomic ones. The mechanisms responsible for these phenomena are discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 1575–1581 (September 1999)     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Thermoluminescence and opitical absorption of BaF2 crystals

Abstract

Nominally pure and Dy-doped BaF₂ crystals were investigated concerning their optical absorption (OA) and thermoluminescence (TL) properties. Peaks at 120—150 and 200°C were observed for a heating rate of 1.7°C/s. The TL response for γ-rays and the TL emission spectra were obtained for these peaks. Except for the purest crystal, all BaF₂ crystals produced OA bands before irradiation typical of Ce³⁺ ions. After irradiation, Dy doped crystals showed bands due to Dy²⁺ ions. A nominally pure sample gave bands related to Ce²⁺ ions and photochromic centers of Ce³⁺ ions. and photochromic centres of Ce³⁺ ions. The correlation between some OA bands and TL peaks is discussed.     

EPR of Mn2+ in single crystals of [Zn(H2O)6]SnF6 and [Co(H2O)6]SnF6; Co2+ spin-lattice relaxation time

EPR studies have been carried out in Mn²⁺-doped single crystals of [M(H₂O)₆]SnF₆ (M  Zn, Co) at different temperatures using X-band microwave frequency. Mn²⁺ has been found to substitute for Zn²⁺ or Co²⁺ exhibiting a unique magnetic complex with z-axis directed long the c-axis of the crystals. Observation of resolved Mn²⁺ spectrum in [Co(H₂O)₆]SnF₆ and broadening of the resonance lines on cooling the crystals have been explained on the basis of host spin-lattice relaxation narrowing. The T₁ of Co²⁺ has been estimated to be ≈ 1.8 × 10⁻¹² s at 293 K.     

Luminescent and photochemical processes in CdBr<Subscript>2</Subscript> : AgCl crystals

This paper reports on the results of the investigation into the optical luminescence properties of photochromic crystals CdBr₂ : AgCl grown by the Bridgman-Stockbarger method. It has been shown that, under X-ray, optical, and N₂-laser excitations of the grown crystals, there occurs emission due to Ag⁺ impurities in addition to emission from centers characteristic of CdBr₂. The photostimulated chemical reactions occurring in CdBr₂ : AgCl lead to a weakening of the luminescence and to a change in its spectral composition. Models of photosensitive centers and centers of photochemical coloring have been proposed. The mechanisms of the photochromic effect have been considered. The nature of luminescent and trapping centers has been discussed.     

Microhardness of crystals of KBr-KI solid solutions with Sr2+ and OH− impurities

The microhardness, conductivity, and dielectric-loss angle have been studied in KBr and KI single crystals and in their solid solutions with Sr²⁺ and OH^– impurities. It is shown that the Sr²⁺ impurity dissolves only slightly in KI crystals and in KBr-KI solid solutions having a large KI content. Addition of the anionic OH^– impurity to the molten salts reduces the micro-hardness of KBr but it does not affect that of KI crystals or KBr-KI solid solutions having a large KI content. The composition dependence of the microhardness for KBr-KI solid solutions is constructed on the basis of the microhardness values for the corresponding crystals purified of cationic impurities of different valence.Translated from Izvestiya VUZ. Fizika, No. 10, pp. 18–21, October, 1969.     

Thermally stimulated depolarization measurements on NaF:02-, NaCI:S2-.and KC1:S2-

In NaCl:S^2-, KC1:S² and NaF:0^2-(i) optical absorption and emission spectra and (ii) electric conductivity measurements show that after suitable heat treatment the bivalent anion impurities are paired with anion vacancies. Conventional dielectric absorption measurements and sensitive measurements of thermally stimulated depolarizing (t. s. d.) currents (ionic thermocurrent) have failed to detect the presence of bivalent anion-anion vacancy dipoles in these crystals. We suggest that derealization or sharing of the electron of the bivalent impurity ion, possibly with the vacancy, considerably reduces the dipole moment.     

Evolution of NaNO<Subscript>2</Subscript> in porous matrices

NMR and dielectric studies of NaNO₂ loaded into an SBA-15 mesoporous matrix are reported. The spin-lattice relaxation rate and the ²³Na NMR line shift, as well as the permittivity, were measured within a broad temperature interval including the ferroelectric phase transition in NaNO₂. The phase transition temperature of sodium nitrite in as-prepared samples was shown to differ substantially from that characteristic of a bulk crystal. The permittivity grows strongly in the vicinity of the phase transition. Heating a sample causes the properties of NaNO₂ embedded in pores to gradually approach those of bulk crystals.     

杂质对K2ZnCl4晶体无公度结构相变的影响

对K₂ZnCl₄铁电晶体在无公度-公度转变的相变点附近的孤子行为进行了研究。发现在相变点附近杂质使介电函数明显偏离居里-外斯定律,并导致介电峰值的明显下降;同时还发现杂质对升温相变点T_c^h较之对降温相变点T_c^c有更大的影响,这与Rb₂ZnCl₄等晶体中的情况恰好相反。采用朗道自由能理论可较好地描述杂质在相变点附近对介电函数的影响。分 关键词：     

Electrical conductivity of magnesium oxide single crystal below 1200 K

Using 2-, 3- and 4-electrodes configurations the direct current conductivity of MgO single crystals of nominally highest purity (with respect to cation impurities), grown by arc-fusion, was studied in argon or oxygen between 500–1200 K with special reference to both hysteresis effects during heating and cooling cycles and conductivity phenomena which occur underneath the surface in a thin subsurface zone. The samples contained 250–2500 at.-ppm carbon and typically 800 at.-ppm hydrogen.Below 1000 K the low temperature (LT) conductivity mechanism is characterized by an activation energy of 1.1 ± 0.2eV, distinctly lower than that of the high temperature region (HT) approximately 2.4 eV. By annealing at 300 K the LT mechanism progressively builds up and causes a very pronounced conductivity increase between 700–900 K, unaffected or even enhanced by O₂. Above 900 K, O₂ decreases the conductivity.The LT mechanism is proposed to be due to defect electrons on anion sites corresponding to O^? in the O^2? structure which are a consequence of the presence of carbon and hydrogen dissolved in the MgO and formally derived from the dissolution of traces of CO₂ and H₂O [J. Chem. Phys. Solids43, 129 (1982)].The dissolved carbon is known to segregate into the elastically relaxed subsurface zone (J. Chem. Phys. Solids43, 59 1982). The conductivity data suggest that between 700–900 K, defect species of C + 2O^?, the dipolar CO^?₂, which become strongly enriched in the subsurface zone upon annealing at 300 K, dissociate according to the equation CO₂^2?→CO^? + O^?, thus generating the defect electrons responsible for the LT mechanism.     

Observations on a high temperature peak in the thermoluminescence of fluorites

A new peak at about 650°C has been observed in the thermoluminescence emission of gamma irradiated natural fluorites containing significant quantities of lanthanide rare-earth (RE) elements as impurities. Thermal activation energy of the corresponding trap has been evaluated to be 2·99 eV with a frequency factor of 10¹⁶ sec⁻¹. The optical activation energy, as deduced from photo-transfer-induced-TL from this trap, is 5·36 eV. Many types of natural fluorites as well as synthetically grown CaF₂ crystals doped with single and pairs of rare earth elements have been studied and the results indicate that the high temperature peak is associated with Sm impurity coexisting with Y, La or Ce in CaF₂. There are indications that this newly observed TL peak can be gainfully employed in ultraviolet dosimetry and geological dating of fluorite deposits.     

Yb:CaF2-SrF2激光晶体光谱性能以及热学性能的研究

采用坩埚下降法生长了Yb: CaF₂-SrF₂晶体,测试了该晶体的吸收和荧光光谱 以及在不同温度下晶体的热扩散系数和热膨胀系数,并且计算了晶体的热膨胀系数以及在常温下的热导率. 采用对比的方法,对晶体的吸收光谱,荧光光谱,热学性能进行了分析.从吸收和荧光光谱结果表明: 在掺杂相对较高浓度的SrF₂的混晶中, Yb³⁺吸收截面和发射截面比较大. Yb: CaF₂-SrF₂ (19%)晶体在1040 nm附近的发射截面比较大,光谱也比较宽. 这说明在掺杂相同浓度Yb时,混晶中CaF₂, SrF₂的比例不同,晶体的光谱性质不同, 主要原因是在混晶中晶体的无序度不同,晶体对称性降低,形成低对称光学中心. 从热扩散系数计算的热导率结果看出晶体具有比较好的热导率.     

Investigation of superconductivity effects in single-phase and multiphase Bi2Sr2CaCu2O8 single-crystals at 2-MM wavelengths

Experimental investigations of superconductivity effects in single-phase and multiphase Bi₂Sr₂CaCu₂O₈ single-crystals have been carried out at 142 GHz frequency by means of the standing wave profile method [1]. Josephson harmonic generation has been observed to be responsible for the appearence of additional peaks on the standing wave profile of the open dielectric resonator loaded with a properly orientated multiphase high-T_c superconductor specimen. This leads to the conclusion that most of the Josephson junctions in multiphase crystals are located in certain crystallographic planes. The investigations of temperature dependencies showed that sharp resonant peaks of conductivity observed earlier [2] at 60 GHz could also be observed at 142 GHz.     

Anisotropic electrical conductivity,phase transition and thermal hysteresis of a charge-transfer salt dibutylammonium bis-7,7,8,8-tetracyanoquinodimethane DBA（TCNQ）2

This paper reports that a charge-transfer salt dibutylammonium bis-7,7,8,8-tetraeyanoquinodimethane [DBA （TCNQ）2] has been prepared. The temperature dependences of the DC electrical conductivity of the DBA （TCNQ）2 single crystal measured along the crystallographic a, b, and c axes are reported. The crystal shows semicondueting behaviour and the room-temperature conductivities are highly anisotropic （σa = 3.63× 10^-4S/cm, σb = 2.84× 10^-6S/cm, and （σe = 1.82 × 10^-5S/cm）. Particularly, a sharp semiconductor to semiconductor transition has been observed around 270 K on the resistivity curves measured under cooling and heating. In addition, thermal hysteresis phenomena on conductivity and differential scanning calorimetry curves are also reported.