Static properties of two-component kink in a non-linear discrete polarizability model

We study analytically, in the low-velocity regime, the static properties of two-component kink in a discrete polarizability model with a quartic electron–ion interaction in one ionic species. Using a discretized Hamiltonian formalism, we derive the exact equations of motion for the two-component kink centre of the mass X(t) and coupled field variables. Numerical analysis is performed to estimate the amplitude of the dressing and its effects on the static properties of the discrete lattice for the potassium selenate (K₂SeO₄) at T=40 K. We find that dressing has important effects on dynamical quantities such as the pinning frequency and the depth of the Peierls–Nabarro potential. Two-component kink contributions to the specific heat have been also analysed both in the continuum and the discrete limits.     

The characterization of an ultrasound spherical phased array for the ablation of deep-seated tissue

In this paper we have developed and evaluated a spherical phased array ultrasound applicator for deep tissue ablation. The 90-element prototype array has a 21 cm aperture and an 18 cm radius of curvature with a 5 cm wide central hole. Annular distribution with circular elements is used to reduce the number of elements. The array is constructed with piezoelectric (PZT-8) circular planar elements that are 1.4 cm in diameter and 0.2-cm thick. With the water-muscle propagation path, the array offers an effective beam focusing depth of at least 8 cm in the muscle layer. Simulation results show that the array provides good beam focusing and steering capability over a cylindrical volume of approximately π × 1 × 1 × 4 cm³ (up to 10 mm off center over ranges from 15 cm to 19 cm). We also present its beam focusing and steering capability in deep tissue through a series of ex vivo experiments by measuring discoloration areas after sonications. The ex vivo experiments show a similar focal range as that found in the simulations.     

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

Tm₂O₃ crystalline films have been deposited on Si (0 0 1) by molecular beam epitaxy (MBE). Band alignments of Tm₂O₃/Si gate stacks were studied by X-ray photoelectron spectroscopy (XPS). According to XPS measurements, it can be noted that a valence-band offset of ?3.1 ± 0.1 eV and a conduction-band offset of 2.3 ± 0.3 eV for the Tm₂O₃/Si heterojunction have been obtained. Based on analysis from O 1s energy-loss spectrum, the energy gap of Tm₂O₃ is determined to be 6.5 ± 0.3 eV. A relatively thicker interfacial SiO_x layer was observed for the as-annealed samples. However, no apparent change in band alignment has been observed for Tm₂O₃/Si heterojunction with the formation of interface layer, which has been discussed in detail.     

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Using double heterojunction structure with linearly graded In_xAl_1–xAs as buffer layer and In_0.9Al_0.1As as cap layer, wavelength extended In_0.9Ga_0.1As detectors with cutoff wavelength of 2.88 μm at room temperature have been grown by using gas source molecular beam epitaxy, their characteristics have been investigated in detail and compared with the detectors cutoff at 2.4 μm with similar structure as well as commercial InAs detectors. Typical resistance area product R₀A of the detectors reaches 3.2 Ω cm² at 290 K. Measured peak detectivity reaches 6.6E9 cm Hz^1/2/W at room temperature.     

Resistance oscillations in junctions of superconductor–magnetic system

Resistance oscillations as a function of magnetic field were observed in superconductor–magnetic tunnel junctions of Nb–Fe–FeO_x–SiO₂–Au–Nb. Junctions involving superconductor–magnetic layer superconductor system are exciting because for certain regime of ferromagnetic layer thickness, a Josephson coupling with an intrinsic phase difference of π might be stabilized. For fabrication of the tunnel junctions the thin films were deposited by RF/DC magnetron sputtering. Using photolithography and reactive ion etching, square junctions of size varying from 50 μm to 250 μm were defined. I–V characteristics and R vs. H characteristics were studied at 4.2 K. When the magnetic field is applied parallel to the junction plane, measurements of the junction resistance as a function of magnetic field at a fixed temperature show resistance peaks whenever the total magnetic flux through the junction equals an integral multiple of flux quantum. The penetration depth of the superconducting electrodes was estimated from the positions of the resistance peaks.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

Irradiation induced modifications in morphology and magnetic property of Mn/Si structure

Mn films of ∼50 nm has been deposited by electron beam evaporation technique on cleaned and etched Si [(1 0 0), 8–10 Ω cm] substrates to realize a Mn/Si interfacial structures. The structures have been irradiated from energetic (∼100 MeV) ion beam from Mn side. The irradiated and unirradiated structures have been characterized from atomic force microscopy, X-ray diffractometry, magnetic force microscopy, and vibrating sample magnetometer facilities. It has been found that surface/interfacial granular silicide phases (of Mn_xSi_y) are formed before and after the irradiation with a irradiation induced modifications of surface morphology and magnetic property. The surface/interface roughness has been found to increase on the irradiation from the atomic force microscopy data. The magnetic property on the irradiation shows an interesting and significant feature of an increased coercivity and a ferromagnetic like behavior in the Mn–Si structure. The observed increased coercivity has been related to the increased roughness on the irradiation. The ferromagnetism after the irradiation is a curious phenomenon which seems due to the formation of Mn–C–Si compound from the carbon dissolved in silicon.     

Ion irradiation induced nano pattern formation on TiO2 single crystal

Nanodots have been fabricated on rutile TiO₂(1 1 0) single crystals using Ar ion beam. Ion beam sputtering creates oxygen vacancies, leading to a 45 nm thick Ti rich layer, on the surface. Post-sputtering, rutile TiO₂ also exhibits a decrease in the inter planar separation along [1 1 0] direction. Additionally, blueshift in the E_g Raman mode, representing the vibrations of oxygen atoms along c-axis, is also observed. Both these results suggest the development of a compressive stress along c-axis upon sputtering. Enhancement in intensity of A_1g Raman mode also indicates modification in TiO vibrational influence.     

Ablation depth control with 40 nm resolution on ITO thin films using a square,flat top beam shaped femtosecond NIR laser

We reported on the ablation depth control with a resolution of 40 nm on indium tin oxide (ITO) thin film using a square beam shaped femtosecond (190 fs) laser (λ_p=1030 nm). A slit is used to make the square, flat top beam shaped from the Gaussian spatial profile of the femtosecond laser. An ablation depth of 40 nm was obtained using the single pulse irradiation at a peak intensity of 2.8 TW/cm². The morphologies of the ablated area were characterized using an optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS). Ablations with square and rectangular types with various sizes were demonstrated on ITO thin film using slits with varying x–y axes. The stereo structure of the ablation with the depth resolution of approximately 40 nm was also fabricated successfully using the irradiation of single pulses with different shaped sizes of femtosecond laser.     

Optical properties of amorphous Si/SiO2superlattice

Amorphous Si/SiO₂(a-Si/SiO₂) superlattices have been fabricated by the magnetron sputtering technique. The superlattice with an Si layer thickness of 1.8 nm has been characterized by transmission electron microscopy (TEM). The result indicates that most of the regions in the Si layer consist of amorphous phase, while regular structure appears in some local regions. This is in agreement with the Raman scattering spectroscopy. The optical absorption spectrum and photoluminescence (PL) spectrum have been measured. Moreover, the third-order optical nonlinearity χ⁽³⁾of this superlattice has been measured. To our knowledge, this is the first investigation of the nonlinear absorption and refractive index of an a-Si/SiO₂superlattice using the Z -scan technique. The real and imaginary parts of χ⁽³⁾have been found to be 1.316  ×  10 ^− 7eus and  − 5.596  ×  10 ^− 7eus, respectively, which are about two orders of magnitude greater than those of porous silicon. The results may be attractive for potential application in electro-optics devices.     

Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

We have demonstrated 384 × 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiN_x layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD ∼ 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices’ good temperature performance.     

Influence of the antireflection,window, and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules

In order to well study the influence of the thickness and doping concentration on optical properties of transmission-mode GaAs photocathode, three exponential-doping and one uniform-doping photocathode modules were prepared by molecular beam epitaxy with a structure of glass/Si₃N₄/Ga_1 ? xAl_xAs/GaAs. By use of the spectrophotometer, the optical properties were separately measured including the reflectivity and transmissivity curves. Based on thin film optical principles, the optical properties and their integral values are calculated by matrix formula for the four-layer photocathode module. The result shows that the antireflection and window layers affect the peak and valley of the optical property curves and the active layer influences the absorptivity values of the transmission-mode cathode modules. The photocathode module has high absorptivity within the response waveband when the optimal module has the Si₃N₄ antireflection layer of 0.1 μm, the Ga_1 ? xAl_xAs window layer of more than 0.4 μm, and the GaAs active layer of 1.5 μm–2 μm and low average doping concentration.     

Analysis of machining characteristics in electrochemical etching using laser masking

Electrochemical etching using laser masking (EELM), which is a combination of laser beam irradiation for masking and electrochemical etching, allows the micro fabrication of stainless steel without photolithography technology. The EELM process can produce various micro patterns and multilayered structures. In this study, the machining characteristics of EELM were investigated. Changes in characteristics of recast layer formation and the protective effect of the recast layer according to the laser masking conditions and electrochemical etching conditions were investigated by field emission scanning electron microscopy (FE-SEM), focused ion beam (FIB) and X-ray photoelectron spectroscopy (XPS). The oxidized recast layer with a thickness of 500 nm was verified to yield a superior protective effect during electrochemical etching and good form accuracy. Finally, micro patterns and structures were fabricated by EELM.     

Advanced ion beam technology for versatile oxide thin film formation

Various oxide films, such as SnO₂, In₂O₃, Al₂O₃, SiO₂, ZnO, and Sn-doped In₂O₃ (ITO) have been deposited on glass and polymer substrates by advanced ion beam technologies including ion-assisted deposition (IAD), hybrid ion beam, ion beam sputter deposition (IBSD), and ion-assisted reaction (IAR). Physical and chemical properties of the oxide films and adhesion between films and substrates were improved significantly by these technologies. By using the IAD method, non-stoichiometry, crystallinity, and microstructure of the films were controlled by changing assisted oxygen ion energy and arrival ratio of assisted oxygen ion to evaporated atoms. IBSD method has been carried out for understanding the growth mode of the films on glass and polymer substrate. Relationships between microstructure and electrical properties in ITO films on polymer and glass substrates were intensively investigated by changing ion energy, reactive gas environment, substrate temperature, etc. Smooth-surface ITO films (R_rms ⩽ 1 nm and R_p−v ⩽ 10 nm) for organic light-emitting diodes were developed with a combination of deposition conditions with controlling microstructure of a seed layer on glass. IAR surface treatment enormously enhanced the adhesion of oxide films to polymer substrate. In the case of Al₂O₃ and SiO₂ films, the oxygen and moisture barrier properties were also improved by IAR surface treatment. The experimental results of the oxide films prepared by the ion beam technologies and its applications will be represented in detail.     

Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

We report on photoluminescence and Raman scattering performed at low temperature (T =  10 K) on GaAs/Al_0.3Ga_0.7As quantum-well wires with effective wire widths ofL =  100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ο_L10 =  285.6 cm⁻¹forL =  11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderleinas applied to the GaAs/Al_0.3Ga_0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques.     

High-frequency magnetoresonance absorption in amorphous magnetic microwires

The Fe₆₉Si₁₆B₁₀C₅, Co₇₅Si₁₀B₁₅, Co₆₈Mn₇Si₁₀B₁₅ amorphous microwires have been studied by the magnetoresonance absorption technique in the X (9.5 GHz), K (20–27 GHz) and Q (30–37 GHz) frequency bands. The specimens under study were metal threads of about 5 μm in diameter coated with dielectric Pyrex layer with thickness 5 μm. The dependences of magnetic resonance spectra on frequency and wire orientation have been measured. The analysis of the resonance signal parameters has revealed that well-known classical equations for FMR in a cylindrical-shaped sample could not be applied for these microwires. It is shown that due to the skin depth effect the model of hollow cylindrical tube has to be applied to explain the experimental results in the frequency range measured. The values of saturation magnetization, g-factor and anisotropy field have been estimated from the frequency dependence of the field for resonance.     

Polarization-independent rapidly tunable optical add-drop multiplexer utilizing non-polarizing beam splitters in Ti:LiNbO3

A polarization-independent four-port wavelength-tunable optical add drop multiplexer (OADM) that utilizes non-polarizing relaxed beam splitters has been analyzed and demonstrated in Ti:LiNbO₃ at the 1530 nm wavelength regime. The design utilizes an asymmetric interferometer configuration with strain induced index grating for polarization coupling along its arms that are shifted in position relative to each other. Experimental results of the filter response agree with theoretical predictions. Electrooptic tuning over a range of 15.7 nm at a rate of 0.08 nm/V has been measured. A temporal response < 46 ns to a 20 V step change in tuning voltage has been demonstrated. Fiber-to-fiber insertion loss is ~ 6.5 dB.     

Studies on the optical and mechanical properties of non-linear optical 3-aminophenol orthophosphoric acid (3-amphph) single crystal

Single crystals of semiorganic material 3-aminophenol orthophosphoric acid (denoted as 3-amphph) of size 29 × 17 × 4 mm³ have been grown by the slow evaporation of an aqueous solution of deionized water at 50 °C. The crystal belongs to orthorhombic system with the non centrosymmetric space group P2₁2₁2₁. The lattice parameter values of 3-amphph crystal are a = 4.481(2) Å, b = 9.782(4) Å and c = 18.326(4) Å. The grown crystals are subjected to single crystal XRD studies to identify its morphology and structure. Optical transmittance and second harmonic generation of the grown crystals have been studied by UV–Vis–NIR spectrum and Kurtz powder technique respectively. The transmittance of 3-amphph crystal has been used to calculate the refractive index n, the extinction coefficient k, reflectance R and both the real (?_r) and imaginary (?_i) components of the dielectric constant as a function of wavelength. The optical band gap of 3-amphph is 4.05 eV with direct transition. The anisotropic mechanical behavior of 3-amphph has been analyzed using Vickers microhardness test. The mechanism of growth is revealed by carrying out chemical etching using water as etchant.     

Self-induced polarization rotation of laser beam in fullerene (C70) solutions

Nonlinear self-rotation of elliptically polarized laser pulses (λ = 532 nm, τ_FWHM ~ 12 ns) in toluene, benzene and binary mixture (toluene + ethanol) solutions of fullerene C₇₀ has been investigated experimentally. Absolute values and signs of the nonlinear refractive indices (n₂) and nonlinear optical susceptibilities χ⁽³⁾(ω, ? ω, ω) of C₇₀ solutions in toluene and benzene at different values of polarization ellipse (θ = 0.2 ÷ 0.8) have been determined. High-resolution transmission electron microscope studies of C₇₀ solutions showed that in toluene + ethanol mixtures ball-shaped C₇₀ clusters are formed with particle sizes in the range ~ 100 ÷ 500 nm. It has been demonstrated, that the clusters sizes depend on the C₇₀ concentration and volume fraction of ethanol in toluene. Correlation between the processes of C₇₀ clusters formation in solutions and the values of polarization self-rotation angle of transmitted laser beam has been demonstrated. Physical mechanisms of laser induced optical activity in fullerene solutions have been discussed.     

Effects of ultrasonic agitation and surfactant additive on surface roughness of Si (1 1 1) crystal plane in alkaline KOH solution

In the silicon wet etching process, the “pseudo-mask” formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (1 1 1) crystal plane during silicon wet etching process. The surface roughness R_q is smaller than 15 nm when using ultrasonic agitation and R_q is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5–20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30–50 W/L, the surface roughness R_q is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness R_q is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (1 1 1) crystal plane in silicon wet etching process.