A very low energy electron reflection study of hydrogen adsorption on W(100) and W(110) surfaces

Experimental results of the elastic backscattering of electrons with energies between 0 and 20 eV from the surface systems H/W(100) and H/W(110) are reported and interpreted on the basis of the Darwin model. On W(100) the adatom distance from the reconstructed substrate is found to be different from that on the relaxed surface. Large vertical displacements of the substrate atoms during reconstruction can be excluded. On W(110) the results indicate two different binding states which are occupied sequentially and which differ significantly in their distances from the surface. Work function change data are also reported for both systems.     

The adsorption entropy of H on W(110)

Recently, Nahm and Gomer have measured the increase in entropy associated with the adsorption of hydrogen on the W(110) surface. We discuss the implications of this data, and address it within the framework of a model introduced recently [Phys. Rev. Lett. 68 (1992) 2846; Surf. Sci. 287/288 (19930 837] to describe hydrogen dynamics on this surface.     

Investigation of the temperature dependent changes of work function induced by adsorption of Ag on W(011)

The adsorption of silver on the (011) face of tungsten has been studied at temperatures from 78 to 1200 K. Investigations were performed using LEED, AES and work function measurements. The work function changes appeared to depend on the nature of the adlayer, and its arrangement with respect to the substrate. An absolute coverage scale was determined for room temperature, and this scale was related to the work function changes observed at this temperature. An interpretation of the obtained curves of the work function changes is presented.     

Monte Carlo simulations of hydrogen adsorption on the W(110) and Mo(110) surfaces

Kinetics of low-temperature hydrogen and deuterium adsorption on W(110) and Mo(110) surfaces have been studied by the real-time Monte Carlo simulations. Recently reported qualitative dependence of the adsorption characteristics on variation of the H₂ flux is described in terms of the dynamical equilibrium between incident and desorption fluxes and improved conditions for accommodation for the hydrogen molecules at high incident fluxes. The role of the intrinsic precursor state in hydrogen dissociative adsorption is analyzed.Received: 16 February 2004, Published online: 28 May 2004PACS: 82.65. + r Surface and interface chemistry; heterogeneous catalysis at surfaces - 02.50.Ng Distribution theory and Monte Carlo studies - 82.20.Wt Computational modeling; simulation     

Interaction of cesium and oxygen on W(110): I. Cesium adsorption on oxygenated and oxidized W(110)

Cesium adsorption on oxygenated and oxidized W(110) is studied by Auger electron spectroscopy, LEED, thermal desorption and work function measurements. For oxygen coverages up to 1.5 × 10¹⁵ cm^?2 (oxygenated surface), preadsorbed oxygen lowers the cesiated work function minimum, the lowest (～1 eV) being obtained on a two-dimensional oxide structure with 1.4 × 10¹⁵ oxygen atoms per cm². Thermal desorption spectra of neutral cesium show that the oxygen adlayer increases the cesium desorption energy in the limit of small cesium coverages, by the same amount as it increases the substrate work function. Cesium adsorption destroys the p(2 × 1) and p(2 × 2) oxygen structures, but the 2D-oxide structure is left nearly unchanged. Beyond 1.5 × 10¹⁵ cm^?2 (oxidized surface), the work function minimum rises very rapidly with the oxygen coverage, as tungsten oxides begin to form. On bulk tungsten oxide layers, cesium appears to diffuse into the oxide, possibly forming a cesium tungsten bronze, characterized by a new desorption state. The thermal stability of the 2D-oxide structure on W(110) and the facetting of less dense tungsten planes suggest a way to achieve stable low work functions of interest in thermionic energy conversion applications.     

A LEED investigation of Xe adsorption on W(110)

Four ordered LEED patterns are observed for Xe adsorption on W(110) for temperatures between 77 and 90 K. A (2 × 2) structure with an area per Xe atom of 28.3 Ų is transformed into two coincidence structures which correspond to a disordered (100) Xe layer. The area per Xe atom in these structures is 17.6 and 20.2 Ų. Xe adsorption on oxygen covered W(110) leads to one-dimensional disorder in the structures observed on clean W(110) without the formation of new structures.     

The adsorption of nitric oxide on W(110) at 300 K: An electron spectroscopic study

Nitric oxide adsorbs dissociatively onto W(110) at 300 K. The simplest interpretation requires adsorption into three states. In the first of these N and O penetrate the surface. In the second state N and O form an overlay er on the W(110) surface. The third state also involves surface penetration but this is deeper than for state 1. The adsorbate stoichiometry was 1:1 throughout adsorption at 300 K. The occupancy of each state was similar after a 300 L exposure when the total amount adsorbed exceeded 17 (±2) × 10¹⁸ atoms m^?2.     

On the interaction of cesium with cleaved GaAs(110) and Ge(111) surfaces: Work function measurements and adsorption site model

The work function of UHV cleaved p-Ge(111) and n-GaAs(110) surfaces has been measured in dependence of the Cs coverage. At very low coverages θ < 0.001 the decrease of the contact potential difference is extremely steep. For GaAs the initial slope of the CPD versus coverage curve amounts to ?740 eV for Ge to ?130 eV per monolayer. Up to the saturation coverage the curves exhibit straight line segments with breaks at distinct coverages. Breaks are found for GaAs at approximately $\text{1}\text{12}$, $\text{1}\text{6}$, and $\text{1}\text{3}$ of a monolayer, for Ge at about $\text{1}\text{12}$, $\text{1}\text{4}$, $\text{1}\text{2}$, and $\text{3}\text{4}$. A new model is developed to explain this behaviour. It is based on the assumption of specific adsorption sites for the Cs atoms at the surfaces. With this model the experimental results, including the breaks, may be described in the whole coverage range from θ = 0.03 up to the saturation. Furthermore the dipole moments derived from the straight line segments are in excellent agreement with those values calculated for different surface molecules between the adsorbed cesium and substrate atoms at the specific adsorption sites.     

Accurate He-Ag(110) interaction potential determination by selective adsorption

The first accurate energy level measurements of a He-metal interaction potential are reported for the Ag(110) surface as obtained from selective adsorption data. The fitting of the experimental data with a suitable phenomenological potential leads to a well depth of 6.0 ± 0.1 meV. The potential curve is considerably softer than those obtained for He interaction with either insulators or semiconductors and is in good agreement with theoretical predictions.     

The adsorption of acetylene on W(100) at room temperature: An electron spectroscopic study

The adsorption of acetylene on W(100) at room temperature has been studied by AES, ELS, thermal desorption, mass spectrometry, work function and LEED in one vacuum chamber. AES line profile analysis shows that there are at least two adsorption processes occurring at room temperature. Further, it is possible to explain all the AES results by assuming non-sequential adsorption into just two states, denoted by α and β. This picture was substantiated and embellished by comparison with other standard surface techniques. The α-state comprises either a C₂H₂ unit with an activation energy for desorption of $\text{2.3}\text{eV}\text{molecule}\text{(53}\text{kcal mole}{}^{\mathrm{?1}}\text{)}$ or CH units bounded through the carbon of the β-state. Saturation coverage for the α-state is 3 × 10¹⁴ molecules cm^?2. The β-state is dissociative at low acetylene exposures and comparison between a carbon covered surface and the β-state suggest the latter to be dissociative up to saturation. There also appears to be ca. 10¹⁴ hydrogen atoms cm^?2 on W(100) on room temperature acetylene saturation, the carbon content of the β-state being 9 × 10¹⁴ atoms cm^?2. The residual C?C bond from the molecule in the β-state remains unknown. No sign of ordering in the adsorbed species was detected, save the possibility of (1 × 1) in the β-state. Acetylene adsorption at 580 K showed hydrogen from the β-state to block acetylene adsorption by 15% at saturation. A two-site adsorption model for the β-state is proposed to explain the results. The α-state is bonded through the carbon of the β-state and it is speculated that the former adsorbs onto “β” domains where there is a critical minimum size for the latter.     

Temperature dependent and other features in electron emission from W(110)

Five minor peaks near the N_4,5N_6,7X (X≡N_6,7orO_2,3) Auger emissions induced by electron bombardment of a tungsten surface have been studied. The 142 eV feature is mainly due to N₃N₅N₇ super-Coster- Kronig processes. The peak at 131 eV showed some temperature dependence and those at 116 eV, 219 eV and 229 eV showed considerable temperature dependence. The temperature sensitive electron emissions were thought to arise from the diffraction of secondary electrons. The analysis was inconclusive save perhaps for the 229 eV feature for which a Kikuchi mechanism is suggested.     

Femtosecond electron and spin dynamics in Ni/W(110) films

The collapse of the magnetic exchange splitting in 7 monolayer thick epitaxial Ni/W(110) films following a femtosecond laser pulse was measured using time-resolved photoemission spectroscopy. Ultrafast demagnetization during the laser induced hot electron cascade proceeds via spin-flip excitations with a relaxation time constant of 300+/-70 fs. At longer times the electronic system cools down and the magnetization is finally reestablished with a time constant of 3.2+/-0.2 ps.     

Low temperature adsorption of water on cleaved GaAs(110) surfaces

The adsorption and desorption of water on UHV-cleaved GaAs(110) surfaces was studied using synchrotron-excited photoelectron spectroscopy. Water was adsorbed at T = 100 K. Desorption was studied during heating to room temperature. At low coverages, dissociated species are observed followed by molecular adsorption. Molecular water is desorbed at T = 160 K. The dissociated species are also mainly desorbed after heating to room temperature. The chemical changes are accompanied by substrate binding-energy shifts, reflecting the movement of the Fermi level at the surface.     

Adsorption and electron properties of thin nickel films on W(110) surface

The evolution of the properties of ordered nickel films with thicknesses increasing from one to three atomic monolayers (ML) adsorbed on the W(110) single crystal surface is studied under ultrahigh vacuum conditions by the methods of reflection-absorption infrared spectroscopy (RAIRS) and ultraviolet photoelectron spectroscopy (UPS). The film structure corresponds to that of the Ni(111) single crystal face. The RAIRS technique is used to study the vibrational properties of the probing NO molecules adsorbed on the nickel films studied. In the course of the nickel film growth, whereby its thickness increases from 1 to 3 ML, both the vibrational and photoelectron spectra exhibit significant variation, which is indicative of a change in the adsorption and electron properties of the film. Stabilization of the IR and photoelectron spectra at a film thickness of 3 ML indicates that this thickness corresponds to the formation of the main adsorption and electron properties of the deposit. At the same time, the vibrational spectra of NO molecules adsorbed on a monoatomic nickel film exhibit features typical of adsorption on the W[110] surface of a massive tungsten crystal.     

Mirror Electron Microscopy (MEM): Work function and imaging of an electron beam biased junction of silicon (100)

We describe in this paper the use of MEM in ultra high vacuum to visualize surface potential, and to obtain projected shadow images and the work function, applied to a silicon (100) surface. We show that the work function does not depend on the n or p doping of the sample and, simultaneously, we show that it is possible to visualize surface potential of approximately 10 mV, the junction bias being ensured by the electron beam.