A (Ga,Mn)Sb magnetic semiconductor for spintronic applications

The structural, optical, and galvanomagnetic properties of (Ga, Mn)Sb layers grown by the laser sputtering of solid targets in H₂ flow are n studied. It is shown that at a growth temperature of 400°C, (Ga, Mn)Sb layers are single-crystal up to high Mn concentrations. The magnetic field dependence of the Hall resistance at measuring temperatures of 10–300 K contains a hysteresis loop; i. e., the layers are ferromagnetic semiconductors.     

Band-gap design of quaternary (In,Ga)(As,Sb) semiconductors via the inverse-band-structure approach

Quaternary systems illustrated by (Ga,In)(As,Sb) manifest a huge configurational space, offering in principle the possibility of designing structures that are lattice matched to a given substrate and have given electronic properties (e.g., band gap) at more than one composition. Such specific configurations were however, hitherto, unidentified. We show here that using a genetic-algorithm search with a pseudopotential "Inverse-band-structure (IBS) approach it is possible to identify those configurations that are naturally lattice matching (to GaSb) and have a specific band gap (310 meV) at more than one composition. This is done by deviating from randomness, allowing the IBS to find a partial atomic ordering. This illustrates multitarget design of the electronic structure of multinary systems.     

Mesa Architecture and Efficiency of InGaP/Ga(In)As/Ge Solar Cells

Technical Physics - It is shown that the mesa architecture and the achieved quality of the side surfaces of the mesa structure of multijunction concentrator solar cells provide an increase in their...     

Half-metallicity in Fe-based Heusler alloys Fe2TiZ (Z = Ga,Ge, As,In, Sn and Sb)

The electronic structure and magnetic properties of new Fe-based Heusler alloys Fe₂TiZ (Z = Ga, Ge, As, In, Sn and Sb) have been studied by first-principles calculations. In these alloys, the 24-electron Fe₂TiGe, Fe₂TiSn are nonmagnetic semiconductors and other compounds are all ferrimagnetic metals. Fe₂TiAs and Fe₂TiSb are predicted to be half-metals with 100% spin polarization. The spin polarization ratio in Fe₂TiGa and Fe₂TiIn is also quite high. The calculated total moment for Fe₂TiAs and Fe₂TiSb is 1 μ_B, which is mainly determined by the Fe partial moment. The half-metallicity of Fe₂TiSb is stable under lattice distortion. The spin polarization of Fe₂TiSb is found to be 100% for the lattice variation in a range of 5.6–6.1 Å, which is attractive in practical applications.     

轻质柔性GaInP/Ga(In)As/Ge三结太阳电池及其性能研究

为了研究柔性太阳能电池的性能,通过太阳能电池减薄工艺制备出轻质柔性Ga In P/Ga(In)As/Ge三结太阳能电池芯片。尺寸为40 mm×60 mm的电池芯片重量为0.7 g,仅为常规175μm厚度电池重量的30%。验证了柔性电池工艺的可行性,制得的柔性电池转换效率达到了30.64%,同常规厚度电池十分接近。对比测试了两种样品不同温度下的暗电流曲线,拟合了两种电池样品的温度系数,结果表明:电池的温度系数与衬底类型无关,只与电池PN结本身相关。     

Exploring the effect of dopant (Si,P, S,Ge, Se,and Sb) in arsenene: A DFT study

The structural, electronic and magnetic properties of arsenene were investigated using DFT (density functional theory). The charge transfer, large biding energies, and short bond lengths indicate that the doped structures are robust. Si, S, Ge and Se doping induce magnetic state in arsenene. The principal contribution to the magnetic moment is originated in the p-orbital of dopants and adjacent As atoms, as is suggested by the results of the application of PDOS (Projected Density of States). More importantly, the low effective mass of electrons in arsenene doped by Si, P and Sb implies high carrier mobility, which indicates the three types of structures are high efficiency n-type semiconductors.     

Formation of thermal vacancies in highly As and P doped Si

Using positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as V-As3. We determine the vacancy formation energy of E(f)=1.1(2) eV and the migration energy of E(m)=1.2(1) eV in highly doped Si. By associating these values with the vacancy-impurity pair, we get an estimate of 2.8(3) eV for the formation energy of an isolated neutral monovacancy in intrinsic Si.     

Silicon migration during MBE growth of doped (A1, Ga)As films

Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling. It is found to be concentration dependent, with no preferential migration towards or away from the growth front. At high concentrations, superlattice disordering during growth is observed using photovoltage and transmission electron microscopy (TEM) techniques. On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process. This is substantiated by measurements of the two-dimensional electron-gas mobility in selectively doped heterojunctions as a function of growth temperature and silicon concentration.     

Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry

Spectroscopic ellipsometry has been used to measure compositions and layer thicknesses of two-, three- and four-layer structures consisting of Al_0.2Ga_0.8As/GaAs and In_0.53Ga_0.47As/Al_0.48In_0.52As/InP materials. A simple procedure has been developed to obtain Al_0.48In_0.52As dielectric functions by scaling InP values. Very good agreement has been obtained with destructive techniques.     

Phase transitions and magnetocaloric effects in intermetallic compounds MnFeX（X=P,As,Si,Ge）

Since the discovery of giant magnetocaloric effect in MnFeP1-x As x compounds,much valuable work has been performed to develop and improve Fe2P-type transition-metal-based magnetic refrigerants.In this article,the recent progress of our studies on fundamental aspects of theoretical considerations and experimental techniques,effects of atomic substitution on the magnetism and magnetocalorics of Fe2P-type intermetallic compounds MnFeX(X=P,As,Ge,Si) is reviewed.Substituting Si(or Ge) for As leads to an As-free new magnetic material MnFeP1-xSi(Ge)x.These new materials show large magnetocaloric effects resembling MnFe(P,As) near room temperature.Some new physical phenomena,such as huge thermal hysteresis and ’virgin’ effect,were found in new materials.On the basis of Landau theory,a theoretical model was developed for studying the mechanism of phase transition in these materials.Our studies reveal that MnFe(P,Si) compound is a very promising material for room-temperature magnetic refrigeration and thermo-magnetic power generation.     

First-Principles Studies for the Electronic Structures of Diluted Magnetic Semiconductors (Ga, Fe)As

First-principles LMTO-ASA band calculations are performed for Ga1-xFexAs (x = 1, 1/4, 1/8) by assuming supercell structures. It is found that the antiferromagnetic (AFM) state is stable for x = 1/4. For x = 1/8, ferromagnetic(FM) state is more stable than AFM state, and no stable magnetic state exists for x = 1. In both the cases the magneticmoments of As and Ga atoms are parallel to those of the nearest Fe atoms due to the p-d hybridization. Further, theband structure shows rather localized Fe 3d state in the gap, and the parallel polarization is confined rather in thevicinity of Fe site.     

First-Principles Studies for the Electronic Structures of Diluted Magnetic Semiconductors （Ga, Fe）As

First-principles LMTO-ASA band calculations are performed for Ga1-xFezAs (x = 1, 1/4, 1/8) by assuming supercell structures. It is found that the antiferromagnetic (AFM) state is stable for x = 1/4. For x = 1/8, ferromagnetic (FM) state is more stable than AFM state, and no stable magnetic state exists for x = 1. In both the cases the magnetic moments of As and Ga atoms are parallel to those of the nearest Fe atoms due to the p-d hybridization. Fhrther, the band structure shows rather localized Fe 3d state in the gap, and the parallel polarization is confined rather in the vicinity of Fe site.     

NMR study of acceptor doped fullerenes (MF6)2C60 (M=As,Sb)

We report on ¹³C and ¹⁹F nuclear magnetic resonance study of acceptor doped fullerenes showing p-type semiconductor behavior. Room temperature ¹⁹F spectra are characteristic for rotating (MF₆⁻) complexes, while the ¹³C spectra show that fullerene molecules are not mobile at temperatures up to 365 K. Reduction of the ¹³C chemical shielding anisotropy of (MF₆)₂C₆₀ in comparison to solid C₆₀ is assigned to the charge transfer between C₆₀ and intercalated species.     

Ga sublattice defects in (Ga,Mn)As: thermodynamical and kinetic trends

We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga(1-x)MnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite concentration increases with increasing Mn content. This is in agreement with thermodynamical considerations for the electronic part of the formation energy of the Ga sublattice point defects. However, the absolute defect concentrations imply that they are determined rather by the growth kinetics than by the thermodynamical equilibrium. The As antisite concentrations in the samples are large enough to be important for compensation and magnetic properites. In addition, the Ga vacancies are likely to be involved in the diffusion and clustering of Mn at low annealing temperatures.     

A first-principles study on the lower-valence coexisting Cr2TiX (X=Al, Ga, Si, Ge, Sn, Sb) Heusler alloys

The electronic, magnetic, and bonding properties of the Cr₂TiX (X=Al, Ga, Si, Ge, Sn, Sb) Heusler alloys have been investigated using first-principles calculations. The results show that Cr₂TiSb exhibits a half-metallic nature and Cr₂TiGa and Cr₂TiSn exhibit a nearly half-metallic nature. From analysis of the density of states and the electron density difference along the Ga→Sn→Sb series for sp atoms, we found that the Cr-Ti bond demonstrates covalent character with more or less the ionic and metallic nature. In addition, the Cr-Ti bonding strength increases along this series. All the compounds have a negative total magnetic moment, most of which are confined to the Cr atoms. There exists a 1.0μ_B increasing trend of the total moment along the III→IV→V main group for sp atoms, and only the total moment of Cr₂TiSb coincides well with the Slater-Pauling behavior.