Self-catalytic growth of horizontal and straight Si nanowires on Si substrates using a sputter deposition technique

We report on the growth of horizontal and straight Si nanowires (NWs) on Si substrate using sputter deposition of the Si layer followed by thermal annealing at 1000 °C and above. The growth of horizontal NWs was achieved without the use of any metal catalyst. Uniform cylindrical shaped Si NWs with a diameter in the range of 50–60 nm and a length of up to 8 μm were synthesized. The as-synthesized Si NWs have a Si core covered with a thin amorphous native oxide layer, as revealed by high resolution transmission electron microscopy. The aspect ratio of these Si NWs is in the range of 100–160. Micro-Raman studies on the NWs reveal a tensile strain on the Si NW core due to presence of a thin oxide layer. From the Raman shift, we calculate a strain of 1.0% for the catalyst free Si NW. FTIR analysis indicates the presence of interstitial oxygen atoms in the Si NWs, as expected from oxidation of Si NWs. For comparison, metal catalyst (Au) assisted Si NWs have also been grown on Si(100) substrate by a similar process. These NWs have a similar diameter and a marginally higher aspect ratio. A model for the growth mechanism of horizontal NWs is presented. This represents one of the first examples of direct horizontal growth of straight Si NWs on commonly used Si substrates suitable for nanoelectronic device fabrication.     

Heterogeneity of surface potential in contact electrification under ambient conditions: A comparison of pre- and post-contact states

We measured the pattern of charging by contact electrification, following contact between a polydimethylsiloxane (PDMS) stamp and a glass substrate with gold electrodes. We used scanning Kelvin probe microscopy to map the surface potential at the same regions before and after contact, allowing a point-by-point comparison. After contact, the mean surface potential of the glass shifted by 360 mV and micron-scale heterogeneity appeared with a magnitude of ∼100 mV. The gold electrodes showed charge transfer but no discernible heterogeneity. These results show that contact electrification causes heterogeneity of surface potential even on non-polymer surfaces such as glass under ambient conditions.     

Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.     

Plasmonic resonance enhancement of single gold nanorod in two-photon photopolymerization for fabrication of polymer/metal nanocomposites

We investigated the plasmonic resonance enhanced two-photon photopolymerization (PETPP) using the isolated chemical synthesized gold nanorods for fabrication of polymer/metal nanocomposites. The isolated gold nanorods with the plasmonic resonance band around 750 nm covered by photoresist were irradiated by a femtosecond laser with the wavelength of 780 nm. The PETPP trigged by the plasmonic resonance enhancement of gold nanorods was localized only in the distance smaller than 30 nm from the surface of gold nanorods, which matched the distance of plasmonic resonant enhanced field of the gold nanorod. The shapes of obtained polymer/gold nanocomposites were changed from the “dumbbell” to the “ellipsoid” with the increase of laser irradiating intensity used for PETPP. This study would provide a potential method for fabricating the plasmonic nanomaterials and nanostructures of polymer/metal nanocomposites, which could be expected to be applied in the emerging fields such as nanophotonics, nanobiosensor, nanolithography.     

Swift heavy ion beam mixing at V/Si interface

Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 10¹³ to 1 × 10¹⁴ ions/cm² fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V₆Si₅ silicide phase at the interface at the highest ion irradiation dose.     

A comparative study of electron transport in benzene molecule covalently bonded to gold and silicon electrodes for pioneering the electron transport properties of silicon quantum dot-molecule hybrid polymers

In order to pioneer the electron transport properties of silicon (Si) quantum dot-molecule hybrid polymers, we investigate the electron transport properties of the benzene molecule in silicon (Si) semiconductor electrodes, based on nonequilibrium Green's function (NEGF) method coupled with density functional theory (DFT), in comparison with conventional gold (Au) metal electrodes, with three different anchoring linker groups: thiol for dithiol-benzene (DTB), methylene for dimethyl-benzene (DMB), and direct bonding for benzene (Ph). It is interestingly found that, due to band gap nature of the Si semiconductor electrodes, the molecular junctions with the Si electrodes show no current up to the bias voltage of around 0.8 V. In addition, the DTB molecular junctions in the Si semiconductor electrodes connected with Si–S bond show higher conducting properties than other DMB and Ph molecular junctions directly coupled to the electrodes with the Si–C bonds (DMB < Ph < DTB). The electron transport properties of the molecules in the two different electrodes are analyzed on the basis of the understanding transmission spectra, projected density of states (PDOS), and molecular orbitals. We believe that the use of thiol linker may open new possibility in the molecular electronics with the Si semiconductor electrodes and the Si QD-molecule hybrid polymers concept.     

Adsorption of bovine serum albumin on amorphous carbon surfaces studied with dip pen nanolithography

This article reports the use of dip pen nanolithography (DPN) for the study of adsorption of bovine serum albumin (BSA) proteins on amorphous carbon surfaces; tetrahedral amorphous carbon (t-aC) and silicon doped hydrogenated amorphous carbon (a-C:H:Si). Contact angle study shows that the BSA proteins reduce the contact angle on both carbon materials. We also noticed that the drop volume dependence is consistent with a negative line tension, i.e. due to an attractive protein/surface interaction. The DPN technique was used to write short-spaced (100 nm) BSA line patterns on both samples. We found a line merging effect, stronger in the case of the a-C:H:Si material. We discuss possible contributions from tip blunting, scratching, cross-talk between lever torsion and bending and nano-shaving of the patterns. We conclude that the observed effect is caused in large measure by the diffusion of BSA proteins on the amorphous carbon surfaces. This interpretation of the result is consistent with the contact angle data and AFM force curve analysis indicating larger tip/surface adhesion and spreading for the a-C:H:Si material. We conclude by discussing the advantages and limitations of DPN lithography to study biomolecular adsorption in nanoscale wetting environments.     

Fabrication of nanostructures on Si(1 0 0) and GaAs(1 0 0) by local anodic oxidation

Atomic force microscopes have become useful tools not only for observing surface morphology and nanostructure topography but also for fabrication of various nanostructures itself. In this paper, the application of AFM for fabrication of nanostructures by local anodic oxidation (LAO) of Si(1 0 0) and GaAs(1 0 0) surfaces is presented. A special attention is paid to finding relations between the size of oxide nanolines (height and half-width) and operational parameters as tip-sample voltage and tip writing speed. It was demonstrated that the formation of silicon oxide lines obeys the Cabrera-Mott theory, i.e. the height of the lines grow, linearly with tip-sample voltage and is inversely proportional to logarithm of tip writing speed. As for GaAs substrates, the oxide line height grows linearly with tip-sample voltage as well but LAO exhibits a certain deviation from this theory. It is shown that the selective chemical etching of Si or GaAs ultrathin films processed by LAO makes it possible to use these films as nanolithographic masks for further nanotechnologies, e.g. fabrication of metallic nanostructures by ion-beam bombardment. The ability to control LAO and tip motion can be utilized in fabrication of complex nanostructures finding their applications in nanoelectronic devices, nanophotonics and other high-tech areas.     

On the effectiveness of lateral excitation of shear modes in AlN layered resonators

We describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films. AlN films are deposited on moderately doped silicon substrates covered either with partially metallic or fully insulating Bragg mirrors, and on insulating glass plates covered with insulating acoustic reflectors. TiO_x seed layers are used to promote the growth of highly c-axis oriented AlN films, which is confirmed by XRD and SAW measurements. The excitation of the resonant modes is achieved through coplanar Mo electrodes of different geometries defined on top of the AlN films. All the structures analyzed display a clear longitudinal mode travelling at 11,000 m/s, whose excitation is attributed to the direction of the electric field (parallel to the c-axis) below the electrodes; this is enhanced when a conductive plane (metallic layer or Si substrate) is present under the piezoelectric layer. Conversely, only a weak shear resonance (6,350 m/s) is stimulated through the effect of coplanar electrodes, which is explained by the weakness of the electric field strength parallel to the surface between the electrodes. A significantly more effective excitation of shear modes can be achieved by normal excitation of AlN films with tilted c-axis.     

MeV carbon ion irradiation-induced changes in the electrical conductivity of silver nanowire networks

MeV carbon ion irradiation-induced changes in the electrical conductivity of Silver nanowire (Ag-NW) networks is demonstrated systematically at different C⁺ ion fluences ranging from 1 × 10¹² to 1 × 10¹⁶ ions/cm² at room temperature. At low C⁺ ion fluences, the electrical conductivity of Ag-NWs decreases and subsequently increases with increase fluence. Finally, at high C⁺ ion fluences, conductivity again decreases. The variation in the electrical conductivity of Ag NW network is discussed after analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques. The observed increase in electrical conductivity is thought to be due to ion induced coalescence of Ag-NWs at contact position, which causes reduction of wire–wire contact resistance, while the decrease in electrical conductivity may be due to defect production by C⁺ ions into Ag-NWs. Ion beam technology is therefore a very promising technology that is capable of fabricating highly conductive Ag-NW networks for transparent electrodes. Moreover, a method for thinning, slicing and cutting of Ag-NWs using ion beam technology is also reported.     

Multiple andreev reflections in topological insulator nanoribbons

Superconducting proximity junctions made of topological insulator (TI) nanoribbons (NRs) provide a useful platform for studying topological superconductivity. We report on the fabrication and measurement of Josephson junctions (JJs) using Sb-doped Bi₂Se₃ NRs in contact with Al electrodes. Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations of the axial magneto-conductance of TI NR were observed, indicating the existence of metallic surface states along the circumference of the TI NR. We observed the supercurrent in the TI NR JJ and subharmonic gap structures of the differential conductance due to multiple Andreev reflections. The interface transparency of the TI NR JJs estimated based on the excess current reaches τ = 0.83, which is among the highest values reported for TI JJs. The temperature dependence of critical current is consistent with the short and ballistic junction model confirming the formation of highly transparent superconducting contacts on the TI NR. Our observations would be useful for exploring topological Josephson effects in TI NRs.     

Antireflective properties of disordered Si SWSs with hydrophobic surface by thermally dewetted Pt nanomask patterns for Si-based solar cells

We have theoretically and experimentally investigated the antireflective properties of the disordered subwavelength structures (SWSs) with a hydrophobic surface on silicon (Si) substrates by an inductively coupled plasma (ICP) etching in SiCl₄/Ar plasma using thermally dewetted platinum (Pt) nanopatterns as etch masks for Si-based solar cells. The Pt thin films on the SiO₂/Si surface were properly changed into the optimized dot-like nanopatterns via the thermal dewetting by rapid thermal annealing process. The antireflection properties were definitely affected by the etched profile of SWSs which can be controlled by the conditions of etching process. For the tapered Si SWS with a high average height of 724 ± 78 nm, the reflectance was significantly reduced below 5% over a wide wavelength range of 350-1030 nm, leading to a relatively low solar weighted reflectance of 2.6%. The structure exhibited reflectances less than 14.8% at wide incident angles of 8-70°. The hydrophobic surface with a water contact angle of 113.2° was obtained. For Si SWSs, the antireflective properties were also analyzed by the rigorous coupled-wave analysis simulation. These calculated results showed similar behavior to the experimental results.     

Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors

We introduce a room temperature and solution-processible vanadium oxide (VO_x) buffer layer beneath Au source/drain electrodes for bottom-contact (BC) organic field-effect transistors (OFETs). The OFETs with the VO_x buffer layer exhibited higher mobility and lower threshold voltages than the devices without a buffer layer. The hole mobility with VO_x was over 0.11 cm²/V with the BC geometry with a short channel length (10 μm), even without a surface treatment on SiO₂. The channel width normalized contact resistance was decreased from 98 kΩ cm to 23 kΩ cm with VO_x. The improved mobility and the reduced contact resistance were attributed to the enhanced continuity of pentacene grains, and the increased work function and adhesion of the Au electrodes using the VO_x buffer layer.     

Advantages of STED-Inspired 3D Direct Laser Writing for Fabrication of Hybrid Nanostructures

We present a new method of additive laser technology referred to as STED nanolithography technique. This technique provides a means for fabrication of 3D dielectric and plasmonic composite nanostructures. The new technology is of the utmost interest for the electronics manufacturing industry, in particular, for formation of specific hybrid (metal–dye) nanostructures, which can be utilized as luminescent markers in biology, medicine, criminalistics, and the trade industry. In the present study, we demonstrate the advantages of STED-inspired nanolithography for fabrication of metallic and hybrid nanostructures. The 3D-scanning setup implemented offers the possibility to form both periodic and aperiodic nanostructured arrays. We show the possibility to decrease substantially the lateral size of the lines formed with the use of STED nanolithography as compared to the direct laser writing (DLW) method. The STED nanolithography technique proposed provides a means for synthesizing metallic nanoparticles in the specified points of the volume of the studied object in vivo. In addition, we demonstrate the synthesis of metallic lines by means of STED nanolithography. Moreover, nanometer spatial precision of positioning of the synthesized nanoobjects is achieved. Therefore, it is possible to obtain significant local enhancement of the emission of luminescent markers (surface enhanced luminescence) at any desired point or area of the sample due to plasmonic enhancement of the electromagnetic fields near the surface of metallic nanostructures.     

Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

The reverse current of lateral-type Schottky diodes fabricated on p-type homoepitaxial diamond was analyzed by changing the distance between Schottky and Ohmic electrodes and the metal materials in the Schottky electrodes. The maximum electric field at breakdown was 0.56 MV cm⁻¹ for the Au Schottky contact and less than 0.26 MV cm⁻¹ for the Al Schottky contact. The breakdown voltage depended on the electrode distance when the diamond surface was revealed in vacuum, whereas the Schottky diodes sustained the applied voltage of 500 V, corresponding to 0.69 MV cm⁻¹, after covering of the diamond surface with an insulating liquid. Diamond surface protection is an indispensable technique for fabrication of high-voltage Schottky diodes based on diamond.     

Laser microstructuring for fabricating superhydrophobic polymeric surfaces

In this paper we show the fabrication of hydrophobic polymeric surfaces through laser microstructuring. By using 70-ps pulses from a Q-switched and mode-locked Nd:YAG laser at 532 nm, we were able to produce grooves with different width and separation, resulting in square-shaped pillar patterns. We investigate the dependence of the morphology on the surface static contact angle for water, showing that it is in agreement with the Cassie-Baxter model. We demonstrate the fabrication of a superhydrophobic polymeric surface, presenting a water contact angle of 157°. The surface structuring method presented here seems to be an interesting option to control the wetting properties of polymeric surfaces.     

Self-connected horizontal silicon nanowire field effect transistor

We propose a technique to fabricate self-connected horizontal Si nanowire (NW) field effect transistors (FETs) by a self-assembly mechanism. We show direct growth of Si NWs between two predefined metallic electrodes along the SiO₂ gate oxide using the vapour–liquid–solid (VLS) growth mode. In our approach, the gold catalyst layer is covered by the contact metal, giving rise to selective and localized catalytic activity and growth of NWs from the gold edges. The diameter of the NWs can be adjusted by the thickness of the catalyst layer. Using such a process, we demonstrate field effect operation on the conductivity of a non-intentionally doped 20 nm diameter Si NW. This technique can be implemented in three dimensions, paving the way to three-dimensionalD integration using vertical stacks of self-connected FETs.     

Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF₄ plasma, anisotropic and isotropic, of SiO _x on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.     

The formation of sub-10 nm nanohole array on block copolymer thin films on gold surface using surface neutralization based on O2 plasma treatment and self-assembled monolayer

Blockcopolymer (BCP) lithography is an emerging nanolithography technique for fabrications of various nanoscale devices and materials. In this study, self-assembled BCP thin films having cylindrical nanoholes were prepared on gold by surface neutralization using self-assembled monolayer (SAM). Oxygen plasma treatment was investigated as a way to enhance the functionality of Au surface toward SAM formation. After surface neutralization, well-ordered nanoholes with 9 to 20 nm diameters were formed inside BCP thin films on Au surfaces through microphase separation. The effects of oxygen plasma treatment on the formation of BCP nanopattern were investigated using surface analysis techniques including X-ray photoelectron spectroscopy (XPS) and water contact angle measurement. Au nanodot arrays were fabricated on gold film by utilizing the BCP nanotemplate and investigated by atomic force microscopy (AFM).     

Tuning of ripple patterns and wetting dynamics of Si (100) surface using ion beam irradiation

Ripple patterns on Si (100) surface have been fabricated using 200 keV Ar⁺ oblique ion beam irradiation. Dynamical evolution of patterns is studied for the fluences ranging from 3 × 10¹⁷ ions/cm² to 3 × 10¹⁸ ions/cm². AFM study reveals that the exponential growth of roughness with stable wavelength of ripples up to higher fluence values is lying in the linear regime of Continuum models. Stylus Profilometer measurement was carried out to emphasize the role of sputtering induced surface etching in ripple formation. Rutherford Backscattering Spectroscopy shows the incorporation of Ar in the near surface region. Observed growth of ripples is discussed in the framework of existing models of surface patterning. Role of ion beam sputtering induced surface etching is emphasized in formation of ripples. In addition, the wetting study is performed to demonstrate the possibility of engineering the hydrophilicity of ripple patterned Si (100) surface.