Ultrathin Y2O3(111) films on Pt(111) substrates

The growth of ultrathin films of Y₂O₃(111) on Pt(111) has been studied using scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), and low energy electron diffraction (LEED). The films were grown by physical vapor deposition of yttrium in a 10^? 6 Torr oxygen atmosphere. Continuous Y₂O₃(111) films were obtained by post-growth annealing at 700 °C. LEED and STM indicate an ordered film with a bulk-truncated Y₂O₃(111)–1 × 1 structure exposed. Furthermore, despite the lattices of the substrate and the oxide film being incommensurate, the two lattices exhibit a strict in-plane orientation relationship with the [11?0] directions of the two cubic lattices aligning parallel to each other. XPS measurements suggest hydroxyls to be easily formed at the Y₂O₃ surface at room temperature even under ultra high vacuum conditions. The hydrogen desorbs from the yttria surface above ~ 200 °C.     

Yttrium doped La1−xYxO0.9F0.1FeAs superconductors: Hall and thermopower studies

The effect of yttrium substitution at the lanthanum site on the superconducting properties of La_1?xY_xO_0.9F_0.1FeAs (‘x’ = 0, 0.10, 0.20, 0.30, 0.50 and 0.60) oxypnictides has been studied. Powder X-ray diffraction studies confirm single phases till x = 0.1 beyond which minor amount of Y₂O₃ is observed. The temperature dependence of resistivity measurements confirm the superconducting transition temperature (T_c) of 34.8 (±0.05) K and corresponding Meissner transition at 34.3 K in the ‘x’ = 0.3 composition which is higher than that reported for the parent phase (LaO_0.9F_0.1FeAs (T_c = 28 K)). Further increase in the concentration of yttrium leads to broadening and suppression of the superconducting transition. The value of H_c2 at zero temperature is estimated to be about 60.5 T. The Seebeck coefficient (S) shows a negative sign indicating that the major contribution to the conductivity is by electrons. The Hall coefficient (R_H) also remains negative throughout the temperature range supporting the thermopower results. The lattice parameters (a and c) decreases and the charge-carrier density increases with yttrium doping.     

Effects of Y2O3 additions on the oxygen diffusion in top-seeded melt growth processed YBa2Cu3O7−y superconductors

To understand the effect of Y₂BaCuO₅ (Y211)/YBa₂Cu₃O_7?y (Y123) interfaces on the oxygen diffusion in single grain YBa₂Cu₃O_7?y superconductors, single grain Y123 superconductors with 0.05 and 0.3 moles of Y₂O₃ additions were fabricated by a top-seeded melt growth (TSMG) process. Y123 compacts with Y₂O₃ additions were subjected to melt growth heating cycles with a cooling rate of 1 °C/h through a peritectic temperature (1015 °C) and then annealed at 450 °C for 200 h in flowing oxygen. The superconducting temperature (T_c) and critical current density (J_c) were estimated for the three different regions (top surface (s), intermediate (i) and center (c)) of samples. The amount of Y211/Y123 interface area in single grain Y123 superconductors was successfully controlled by Y₂O₃ additions. The T_c values of s regions were higher than those of i and c regions, which indicates the presence of more oxygen at the sample surfaces. In addition, the T_c values of i and c regions of the Y123 sample with 0.3 mole Y₂O₃ addition were higher than those of the same regions of the Y123 sample with 0.05 mole Y₂O₃ addition due to the promoted oxygen diffusion through Y211/Y123 interfaces and other related defects. In spite of the promoted oxygen diffusion by Y₂O₃ addition, the large T_c difference among the regions still existed, which suggests sluggish oxygen diffusion into single Y123 grains.     

Synthesis and cathodoluminescent properties of Y2SiO5:Tb3+ phosphors prepared from uniform precursor

The luminescent properties of phosphors are sensitive to the size of phosphor particles. The commercial Y₂SiO₅:Tb³⁺ phosphors usually show relatively larger particle size (5–10 μm) due to the irregular morphology of rare earth oxide precursor and thus degrade the luminescent properties. In this paper, we report the Y₂SiO₅:Tb³⁺ phosphors synthesized from the uniform Tb-doped Y₂O₃ precursor by a homogeneous precipitation method. Compared with the commercial phosphors, the obtained Y₂SiO₅:Tb³⁺ phosphors manifest the uniform morphology with much smaller particles distributing from 0.8 μm to 1.9 μm. Consequently, the cathodoluminescent intensity under low excitation voltage (1–5 kV) was increased, demonstrating a strong green emission with a dominant wavelength of 545 nm. Our results indicate an effective way to develop the high-quality phosphors for field emission display.     

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

Adsorption and decomposition of NO on Pt (112)

Adsorption and decomposition of NO on Pt (1 1 2) have been studied by temperature programmed desorption (TPD), ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). NO adsorbs molecularly on Pt (1 1 2) at 95 K. About half amount of NO molecules adsorbs at the terrace sites and remaining half amount adsorbs at the step sites at a full monolayer coverage. Then about half of NO molecules adsorbed at step sites decomposes at around 483 K desorbing N₂, promptly.     

Electrical and structural investigations of perovskite structure reactively sputter deposited coatings

Sr(Zr_0.84Y_0.16)_0.91O_3 ? δ (SZY) and Ba(Zr_0.84Y_0.16)_0.96O_3 ? δ (BZY) protonic conductor coatings were co-sputter deposited from metallic targets in argon–oxygen reactive gas mixtures. The chemical and structural features were investigated by energy dispersive X-ray spectroscopy and X-ray diffraction, and their morphology was assessed by scanning electron microscopy of the surface and of brittle fracture cross sections. The electrical properties of the coating were determined by complex impedance spectroscopy as a function of temperature in air. Relationships are established between the electrical properties and the morphology of the coatings. The SZY as deposited coatings is amorphous and crystallises under the convenient perovskite structure after annealing treatment at 873 K under air. The BZY as deposited coatings is crystallised at 523 K in situ under perovskite structure and a further annealing treatment increases the grain size. Conductivities and activation energies of crystallised coatings were 3.1 · 10^? 5 S cm^? 1/2 · 10^? 5 S cm^? 1 and 0.65 eV/0.71 eV after stabilization at 773 K for strontium and barium zirconate, respectively.     

Identification of iron oxide phases in thin films grown on Al2O3(0 0 0 1) by Raman spectroscopy and X-ray diffraction

We report on the identification of Fe₃O₄ (magnetite) and α-Fe₂O₃ (hematite) in iron oxide thin films grown on α-Al₂O₃(0 0 0 1) by evaporation of Fe in an O₂-atmosphere with a thickness of a few unit cells. The phases were observed by Raman spectroscopy and confirmed by X-ray diffraction (XRD). Magnetite appeared independently from the substrate temperature and could not be completely removed by post-annealing in an oxygen atmosphere as observed by X-ray diffraction. In the temperature range between 400 °C and 500 °C the X-ray diffraction shows that predominantly hematite is formed, the Raman spectrum shows a mixture of magnetite and hematite. At both lower and higher substrate temperatures (300 °C and 600 °C) only magnetite was observed. After post-annealing in an O₂-atmosphere of 5 × 10^?5 mbar only hematite was detectable in the Raman spectrum.     

Critical temperature and orthorhombicity of Y2Ba4Cu7O15−δ

Superconducting properties have been systematically studied for oxygen content controlled Y₂Ba₄O₇O_15?δ (Y247) polycrystalline bulks sintered under various conditions, 940–975 °C and P(O₂) = 4–16 atm. T_c of oxygen annealed Y247 samples at 400 °C varied largely depending on the sintering conditions from ～60 to ～90 K. Samples sintered under higher P(O₂) exhibited lower T_c, whereas they were confirmed to be of Y247 single phase by powder X-ray analyses. Strong relationship between orthorhombicity defined as 1000(b ? a)/(a + b) and T_c was found in Y247 as in the cases of REBa₂Cu₃O_7?δ with light rare-earth elements, such as La, Nd, Sm, Eu and Gd. In addition, T_c‘s of samples with nominal compositions of Y_2+xBa_4?xO₇O_15?δ systematically decreased with an increase of x. These results indicated that partial substitution of Y for Ba occurred in the Y247 compounds possibly due to high occupancy ratio of oxygen at the Cu–O_1-δ chain during the sintering process.     

Adsorption of O2 and CO2 on the Si(111)-7 × 7 surfaces

The interaction of O₂ and CO₂ with the Si(111)-7 × 7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O₂ and CO₂ molecules can readily oxidize the Si(111)-7 × 7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~ 533 eV as well as to bridge sites of adatom/rest atom backbonds at ~ 532 eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO₂ has a lower O/Si ratio than that of O₂.     

Growth,structure, and thermal stability of epitaxial BaTiO3 films on Pt(111)

The growth of epitaxial ultrathin BaTiO₃ films upon rf magnetron sputter deposition on a Pt(111) substrate has been studied by scanning tunnelling microscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy. The BaTiO₃ films have been characterized from the initial stages of growth up to a film thickness of 4 unit cells. The deposited films develop a long-range order upon annealing at 1050 K in UHV. In the submonolayer regime a wetting layer is formed on Pt(111). Thicker films reveal a Stranski–Krastanov-like structure as observed with STM. By XPS a good agreement of the thin film stoichiometry with BaTiO₃ single crystal data is determined. Due to annealing at 1150 K BaTiO₃ forms large two-dimensional islands on the Pt(111) substrate. Different surface structures develop on the islands depending on the O₂ partial pressure during annealing.     

Luminescence enhancement by the reduction–oxidation synthesis in monoclinic RE2O3 (RE=Eu,Gd) phosphors containing Eu3+ activator

A novel synthesis was developed for enhanced luminescence in sesquioxide phosphors containing Eu³⁺ activator. It consisted of two annealing steps: reduction under vacuum with gaseous H₂ at 10 Torr and 1300 °C and re-oxidation at 300–1500 °C in air. The integrated luminescence intensity of the monoclinic Eu₂O₃ phosphor was enhanced ca. 21 times by this method compared with conventional processing. The photoluminescence (PL) intensity was maximized at re-oxidation temperatures of 500–1100 °C. The PL characteristics of monoclinic Eu₂O₃ and Gd₂O₃:0.06Eu samples were compared with a commercial cubic Y₂O₃:Eu phosphor. The evolution of physical characteristics during the two-step annealing was studied by Raman spectroscopy, XPS, XRD, PL decay analysis, and SEM. PL decay lifetime increased proportionally to the PL intensity over the range 0.5–100 μs. Additional vibrational modes appeared at 490, 497, and 512 cm^?1 after the two-step annealing. The increase in PL intensity was ascribed to the formation of excess oxygen vacancies and their redistribution during annealing. Resonance crossovers between the charge transfer state and the emitting ⁵D_J states are discussed in relation to reported luminescence saturation mechanisms for oxysulfides Ln₂O₂S:Eu³⁺ (Ln=Y, La).     

Preparation and characterization of Fe3O4(1 1 1) nanoparticles and thin films on Au(1 1 1)

Fe₃O₄ nanoparticles and thin films were prepared on the Au(1 1 1) surface and characterized using X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). Fe₃O₄ was formed by annealing α-Fe₂O₃(0 0 0 1) structures on Au(1 1 1) at 750 K in ultrahigh vacuum (UHV) for 60 min. Transformation of the α-Fe₂O₃(0 0 0 1) structures into Fe₃O₄ nanoparticles and thin films was supported by XPS. STM images show that during the growth procedure used, Fe₃O₄ initially appears as nanoparticles at low coverages, and forms thin films at ～2 monolayer equivalents (MLE) of iron. Two types of ordered superstructures were observed on the Fe₃O₄ particles with periodicities of ～50 and ～42 Å, respectively. As the Fe₃O₄ particles form more continuous films, the ～50 Å feature was the predominant superstructure observed. The Fe₃O₄ structures at all coverages show a hexagonal unit cell with a ～3 Å periodicity in the atomically resolved STM images.     

Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance

In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO₃/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O₂/(Ar + O₂) ratio. Our result showed that the EMR signal intensities were increased with increasing O₂/(Ar + O₂) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y₂O₃ layer and the amorphous Si-enriched Y–Si interface layer in YMnO₃/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO₃/Si film and the content of Mn nanoclusters within the polycrystalline Y₂O₃ layer and/or the amorphous Y–Si layer was discussed.     

Thermal-induced change in surface termination of DyScO3(110)

Auger electron spectroscopy using excitation by grazing impact of protons and by impact of electrons was applied to determine the elemental composition of the topmost and near-surface layers of DyScO₃(110). The vicinal DyScO₃ crystals were annealed at 1320 K in O₂ and Ar atmospheres by varying annealing time. The prepared surfaces show regularly arranged, smooth terraces with single-atomic steps. The surfaces have DyO termination after annealing in oxygen flow for 30–60 min. Annealing for 600 min of DyScO₃ in oxidizing or inert atmospheres resulted in a ScO_x termination.     

Annealing temperature dependent on structural,optical and electrical properties of indium oxide thin films deposited by electron beam evaporation method

In the present work the influence of annealing temperature on the structural and optical properties of the In₂O₃ films deposited by electron beam evaporation technique in the presence of oxygen was studied. The deposited films were annealed from 350 to 550 °C in air. The chemical compositions of In₂O₃ films were carried out by X-ray photoelectron spectroscopy (XPS). The film structure and surface morphologies were investigated as a function of annealing temperature by X-ray diffraction (XRD) and atomic force microscopy (AFM). The structural studies by XRD reveal that films exhibit preferential orientation along (2 2 2) plane. The refractive index (n), packing density and porosity (%) of films were arrived from transmittance spectral data obtained in the range 250–1000 nm by UV–vis-spectrometer. The optical band gap of In₂O₃ film was observed and found to be varying from 3.67 to 3.85 eV with the annealing temperature.     

Quantification of local oxygen defects around Yttrium ions for yttria-doped ceria–zirconia ternary system

Local coordination structure around Yttrium ions in CeO₂–Y₂O₃ binary and [(CeO₂)_x(ZrO₂)_1?x]_0.8(YO_1.5)_0.2 (x = 0.0 ~ 1.0) ternary system has been investigated by ⁸⁹Y MAS-NMR. NMR spectra are found to be consisted of multiple peaks that can be assigned to 6-, 7- and 8-oxygen coordinated Yttrium ions. Compositional dependence of the spectrum was observed and compared with the previous results for ZrO₂–Y₂O₃ binary system. The present investigation suggested the degree of localization of the oxygen vacancy around the cation is in the order of Zr⁴⁺ > Y³⁺ > Ce⁴⁺. The degree of the oxygen vacancy preference for each cation was quantitatively determined for CeO₂–ZrO₂–Y₂O₃ ternary system the first time.     

Interfacial reactions of Ba2YCu3O6+z with coated conductor buffer layer,LaMnO3

Chemical interactions between the Ba₂YCu₃O_6+x superconductor and the LaMnO₃ buffer layers employed in coated conductors have been investigated experimentally by determining the phases formed in the Ba₂YCu₃O_6+x–LaMnO₃ system. The Ba₂YCu₃O_6+x–LaMnO₃ join within the BaO–(Y₂O₃–La₂O₃)–MnO₂–CuO_x multi-component system is non-binary. At 810 °C (p_O2 = 100 Pa) and at 950 °C in purified air, four phases are consistently present along the join, namely, Ba_2?x(La_1+x?yY_y)Cu₃O_6+z, Ba(Y_2?xLa_x)CuO₅, (La_1?xY_x)MnO₃, (La,Y)Mn₂O₅. The crystal chemistry and crystallography of Ba(Y_2?xLa_x)CuO₅ and (La_1?xY_x)Mn₂O₅ were studied using the X-ray Rietveld refinement technique. The Y-rich and La-rich solid solution limits for Ba(Y_2?xLa_x)CuO₅ are Ba(Y_1.8La_0.2)CuO₅ and Ba(Y_0.1La_1.9)CuO₅, respectively. The structure of Ba(Y_1.8La_0.2)CuO₅ is Pnma (No. 62), a = 12.2161(5) Å, b = 5.6690(2) Å, c = 7.1468(3) Å, V = 494.94(4) Å³, and D_x = 6.29 g cm^?3. YMn₂O₅ and LaMn₂O₅ do not form solid solution at 810 °C (p_O2 = 100 Pa) or at 950 °C (in air). The structure of YMn₂O₅ was confirmed to be Pbam (No. 55), a = 7.27832(14) Å, b = 8.46707(14) Å, c = 5.66495(10) Å, and V = 349.108(14) Å³. A reference X-ray pattern was prepared for YMn₂O₅.     

Growth and characterization of CoSi2 films on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi₂ film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi₂. The CoSi₂ films prepared by this way are characterized by XTEM, XPS and AFM.     

The broadband NIR emission properties of Bi doped La2O3–Al2O3–SiO2 glass

Bi₂O₃ doped 65SiO₂–20Al₂O₃–15La₂O₃ (in mole%) glasses were prepared by the traditional melting–quenching method. The spectroscopic properties and mechanism of NIR broadband emission in these glasses were investigated in this work. Three excitation wavelengths of 500, 700 and 800 nm were used to test emission spectra. The emission band under 500 nm excitation can be regarded as combination of emission bands under 700 and 800 nm excitation. 2.0 mole% is found to be the optimal Bi₂O₃ doping level in this glass. Under 500 nm excitation its emission peak, FWHM and lifetime of emission band are 1160 nm, 300 nm and 569 μs, respectively. The longest fluorescent lifetime reaches 620 μs under 700 nm excitation. The valence state of Bi in these glasses is suggested to be lower than +3 by X-ray photoelectron spectroscopy. With the help of energy matching, we infer that both Bi⁰ and Bi⁺ centers are responsible for the NIR fluorescence of Bi₂O₃ doped 65SiO₂–20Al₂O₃–15La₂O₃ glass.