First-principles study on electronic and optical properties of Cu-doped LiF with Li vacancy

Taken into account the presences of Li vacancy (V_Li), we calculate the formation energy, electronic structure and optical properties of Cu doped LiF (LiF:Cu) by using the density functional theory. The presence of V_Li leads to a decrease of the formation energies of Cu, in favor of Cu doping into LiF. Due to Cu doping, an impurity band of Cu-3d states is formed at the Fermi level, which is then split by the introduction of V_Li. A wide absorption band and some new absorption peaks are obtained in LiF:Cu with an adjacent V_Li to Cu. There appears an absorption peak at 9.3 eV, which is consistent with the experiment observation (133 nm). The results are useful for understanding of the optical properties of the doped systems.     

Optical properties of methane to 288 GPa at 300 K

Optical properties of solid methane (CH₄) were studied at high pressure and room temperature using a diamond anvil cell. Reflectivity and transmission measurements were used to measure the refractive index to 288 GPa. Fabry-Perot interferometery was used to measure the sample thickness to 172 GPa. This data was fitted to the derived expression of thickness vs. pressure that was then used to calculate the thickness to 288 GPa. This in turn was combined with optical absorption experiments to obtain the absorption coefficient and hence the extinction coefficient k^*. From combined reflection and absorption experiments the refractive index n=n_s+ik^* was obtained. The index of refraction and the ratio of molar refraction to molar volume showed a large increase between 208 and 288 GPa. This behavior indicated that a phase transformation of insulator-semiconductor might have occurred in solid CH₄ by 288 GPa.     

Structural,electronic, optical and bonding properties of strontianite,SrCO3: First-principles calculations

The first-principles calculations are performed within the density functional theory to investigate the crystal structure, energy band structure, density of states, optical properties, and bonding properties of strontianite. The optimized structure parameters and bonding results with the generalized gradient approximation (GGA) functional and the localized density approximation (LDA) functional are in good agreement with the earlier experimental data. The band structure, density of states and chemical bonding of strontianite have been calculated and analyzed. The indirect band gap of strontianite is estimated to be ~4.45 eV (GGA) or ~4.24 eV (LDA). The absorption, reflectivity, refractive index and extinction coefficient have been calculated using the imaginary part of the dielectric function. The calculated results of the optical properties show that strontianite has an optical anisotropy along [100] (or [010]) and [010] polarization directions of incoming light. Furthermore, the calculated results of the density of states and Mulliken population indicate that the interactions among atoms are both ionic and covalent bonding in strontianite.     

The structural, electronic and optical properties of CdxZn1 − xSe ternary alloys

The structural, electronic, and optical properties of Cd_xZn_1 − xSe alloys are investigated using the first-principles plane-wave pseudopotential method within the LDA approximations. In particular, the lattice constant, bulk modulus, electronic band structures, density of state, and optical properties such as dielectric functions, refractive index, extinction coefficient and energy loss function are calculated and discussed. Our results agree well with the available data in the literature.     

First-principles calculations for electronic, optical and thermodynamic properties of ZnS

The electronic, optical and thermodynamic properties of ZnS in the zinc-blende （ZB） and wurtzite （WZ） structures are investigated by using the plane-wave pseudopotential density functional theory （DFT）. The results obtained are consistent with other theoretical results and the available experimental data. When the pressures are above 20.5 and 27 GPa, the ZB-ZnS and the WZ-ZnS are converted into indirect gap semiconductors, respectively. The critical point structure of the frequency-dependent complex dielectric function is investigated and analysed to identify the optical transitions. Moreover, the values of heat capacity Cv and Debye temperature θ at different pressures and different temperatures are also obtained successfully.     

First-principles calculations of structural, electronic, optical and elastic properties of magnesite MgCO3 and calcite CaCO3

Detailed ab initio calculations of the structural, electronic, optical and elastic properties of two crystals - magnesite (MgCO₃) and calcite (CaCO₃) - are reported in the present paper. Both compounds are important natural minerals, playing an important role in the carbon dioxide cycling. The optimized crystal structures, band gaps, density of states diagrams, elastic constants, optical absorption spectra and refractive indexes dependence on the wavelength all have been calculated and compared, when available, with literature data. Both crystals are indirect band compounds, with calculated band gaps of 5.08 eV for MgCO₃ and 5.023 eV for CaCO₃. Both values are underestimated by approximately 1.0 eV with respect to the experimental data. Although both crystals have the same structure, substitution of Mg by Ca ions leads to certain differences, which manifest themselves in noticeable change in the electronic bands profiles and widths, shape of the calculated absorption spectra, and values of the elastic constants. Response of both crystals to the applied hydrostatic pressure was analyzed in the pressure range of phase stability, variations of the lattice parameters and characteristic interionic distances were considered. The obtained dependencies of lattice constants and calculated band gap on pressure can be used for prediction of properties of these two hosts at elevated pressures that occur in the Earth's mantle.     

First-principles study of the structural, elastic, electronic and optical properties of the monoclinic BiScO3

The structural, elastic, electronic and optical properties of the monoclinic BiScO₃ are investigated in the framework of the density functional theory. The calculated structural parameters are in agreement with the experimental values. Moreover, the structural stability of BiScO₃ system has been confirmed by the calculated elastic constants. The band structure, density of states, charge transfers and bond populations are also given. The results indicate that BiScO₃ has a direct band gap of 3.36 eV between the occupied O 2p states and unoccupied Bi 6p states, and its bonding behavior is a combination of covalent and ionic nature. Finally, the absorption spectrum, refractive index, extinction coefficient, reflectivity, energy-loss function and dielectric function of the monoclinic BiScO₃ are calculated. In addition, the variation of the static dielectric constants ε₁(0) as a function of pressure for BiScO₃ is also discussed.     

高压下LiNbO3晶体电子结构与光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理超软赝势平面方法研究了外界压强对LiNbO3晶体波态密度,能带结构,电荷密度以及光学性质的影响.能带结构计算表明,价带顶主要由O-2p和Nb-4d态电子贡献,导带底主要由Nb-4d态电子贡献,且带隙随着压强的增加而线性增大.利用复介电函数计算了LiNbO3晶体在不同压强下光学性质的折射率、反射率、吸收系数,能量损失函数以及光电导率. 研究发现：外界压强大于10Gpa时,静态折射率保持不变,随外界压强的增加,反射率、吸收函数以及光电导率区间有一定程度的拓宽,损失函数峰发生“蓝移”.研究表明,高压可以有效调控LiNbO3晶体的电子结构和光学性质,为LiNbO3晶体的高压应用提供了有益的理论依据.     

高压下LiNbO_3晶体电子结构与光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理超软赝势平面方法研究了外界压强对LiNbO_3晶体态密度,能带结构,电荷密度以及光学性质的影响.能带结构计算表明,价带顶主要由O-2p和Nb-4d态电子贡献,导带底主要由Nb-4d态电子贡献,且带隙随着压强的增加而线性增大.利用复介电函数计算了LiNbO_3晶体在不同压强下光学性质的折射率、反射率、吸收函数,能量损失函数以及光电导率.研究发现:外界压强大于10GPa时,静态折射率保持不变,随外界压强的增加,反射率、吸收函数以及光电导率区间有一定程度的拓宽,损失函数峰发生"蓝移".研究表明,外界高压可以有效调控LiNbO_3晶体的电子结构和光学性质,为LiNbO_3晶体的高压应用提供了有益的理论依据.     

Calculated structural, electronic and optical properties of Ga-based semiconductors under pressure

The structural, electronic and optical properties of GaP, GaAs and GaSb at ambient and under hydrostatic pressure have been calculated using the full potential linear augmented plane wave (FP-LAPW) method. The calculated lattice constant, bulk modulus and its pressure derivative are compared with available experimental data. The first and second order pressure coefficients for the (Γ-Γ) energy gaps and hydrostatic deformation potential shows agreement with measurement. The linear pressure coefficients of the transition (Γ-Γ) increases significantly as anion atomic number increases (GaP→GaAs→GaSb). The magnitude of linear pressure coefficient of the transition (Γ-X) are small and usually negative. The variation of linear pressure coefficient of the transition (Γ-L) are relatively small and follow similar trend as (Γ-Γ). Overall the calculated linear and nonlinear pressure coefficients show good agreement with the experimental data. The obtained dielectric function, refractive index, extinction coefficient and reflectivity are compared with measured data and show qualitatively good agreement.     

Electronic and optical properties of CuGaS2: First-principles calculations

Electronic structure and optical properties of CuGaS₂ are calculated using the full potential linearized augmented plane wave plus local orbitals method. The calculated equilibrium lattice is in reasonable agreement with the experimental data. The electronic structures indicate that CuGaS₂ is a semiconductor with a direct bandgap of 0.81802 eV. Furthermore, other experiments and theory also show that this material has a direct bandgap. It is noted that there is quite strong hybridization between Ga 3d and S 3s orbitals, which belongs to the (GaS₂)⁻. The complex dielectric functions are calculated, which are in good agreement with the available experimental results.     

First-principles study on electronic,magnetic properties and optical absorption of vanadium doped rutile TiO2

The electronic, magnetic properties and optical absorption of vanadium (V) doped rutile TiO₂ have been studied by the generalized gradient approximation GGA and GGA+U (Hubbard coefficient) approach respectively. On the one hand, we consider the influence of vanadium with different doping concentration on the electronic structure. On the other hand, we study double V atoms doped TiO₂, mainly study four V-doped TiO₂ configurations, and find the magnetic ground states are ferromagnetic state. For the TiO₂@V-V1, TiO₂@V-V3 and TiO₂@V-V4 configurations without O ion as bridge between V-V atoms, there will have a metastable state of antiferromagnetic configurations, while, for the TiO₂@V-V2 configurations with an O ion as bridge between V-V atoms, due to the existence of superexchange between V-O-V, there will only exist the ground state of ferromagnetic state and there are no other metastable configurations. Furthermore, the optical properties of V-doped TiO₂ are calculated. The results show that the V-doped TiO₂ has strong infrared light absorption and visible light absorption.     

高压下LiF和NaF的结构稳定性及其电子和光学性质的第一性原理研究

基于密度泛函理论，采用全势线性缀加平面波加局域轨道方法，计算模拟了LiF高压下的相变行为，预测其在450GPa附近发生由NaCl结构(B1)到CsCl结构(B2)的结构相变.同时还计算了高压下LiF不同相的电学特性，LiF的复介电函数以及介电常数随压强变化关系.通过比较能带结构的变化行为，得出LiF在53GPa附近还存在等结构相变，即由直接带隙结构变为间接带隙结构.将LiF的计算结果与另外一个同构化合物NaF进行了比较讨论. 关键词： LiF 压致相变 从头计算     

Ab initio calculations of electronic and optical properties in O-doped LiF crystal

We present a first-principle study of electronic and optical properties in pure LiF and O-doped LiF crystals. The pure LiF crystal exhibits a wide band gap while the O-doped LiF crystal shows the less band gap due to the contribution of O 2p. Some optical constants, such as dielectric functions, reflectivity and the refractive index, have been performed. The calculated reflectivity and refractive index from the pure LiF crystal agree with the experimental and recently calculated results in the low-energy range. Meanwhile, the optical properties have also been predicted from the O-doped LiF crystal. The absorption band in 200 nm has been observed, which is relatively close to the experimental result.      

闪锌矿结构AlN、AlP、AlAs和AlSb电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论下的第一性原理平面波赝势从头算量子力学方法,对闪锌矿结构AlN、AlP、AlAs和AlSb的电子结构和光学性质进行了研究。分析比较了这些化合物的能带结构、态密度、介电函数及折射率等性质,总结Al与不同Ⅴ族元素形成化合物时的性质变化规律。结果表明,四种材料有着相似的能带结构,都是间接带隙宽禁带半导体,但是在导带底AlN的能态结构与其它三种材料明显不同。随着从AlN到AlSb的变化,光学性质曲线发生红移。     

Ab initio calculations of structural, electronic and dynamical properties of BeSe(1 1 0) surface

We use an ab initio pseudopotential method within the local-density approximation to determine the structural and electronic properties of the BeSe(1 1 0) surface. The relaxed geometry of this surface shows tilted cation-anion chains, with the anions being raised. The general pattern of the electronic structure of this surface is similar to that on other II-VI(1 1 0) surfaces. The phonon spectrum and corresponding surface density of states are also calculated using a linear response approach based on the density functional perturbation theory. In our calculations, we have found two localized phonon modes in the acoustic-optical gap region. The atomic displacement patterns of these surface phonon modes are presented and discussed.     

Structural,electronic and optical properties of Ca3Bi2: First-principles investigation

In this work by applying first principles calculations structural, electronic and optical properties of Ca₃Bi₂ compound in hexagonal and cubic phases are studied within the framework of the density functional theory using the full potential linearized augmented plane wave (FP-LAPW) approach. According to our study band gap for Ca₃Bi₂ in hexagonal phase are 0.47, 0.96 and 1?eV within the PBE-GGA, EV-GGA and mBJ-GGA, respectively. The corresponding values for cubic phase are 1.24, 2.08 and 2.14?eV, respectively. The effects of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths and anti-symmetry gap are investigated. It is found that the hydrostatic pressure increases the band widths of all bands below the Fermi energy while it decreases the band gap and the anti-symmetry gap. In our calculations, the dielectric tensor is derived within the random phase approximation (RPA). The first absorption peak in imaginary part of dielectric function for both phases is located in the energy range 2.0–2.5?eV which are beneficial to practical applications in optoelectronic devices in the visible spectral range. For instance, hexagonal phase of Ca₃Bi₂ with a band gap around 1?eV can be applied for photovoltaic application and cubic phase with a band gap of 2?eV can be used for water splitting application. Moreover, we found the optical spectra of hexagonal phase are anisotropic along E||x and E||z.     

Effects of N adsorption on the structural and electronic properties of SrTiO3(0 0 1) surface

The atomic configurations, bonding characteristics, and electronic structures of the N-adsorbed (directly and substitutionally) SrTiO₃(0 0 1) surface are studied by using first-principles method based on the density functional theory. From the analysis of the energetics and density of states, it is found that the stability of the directly adsorbed N depends on the relative position of N atom to the surface. To better understand the effects of the substitutionally adsorbed N on the surface, as an example, the behavior of Au atoms adsorbed on the N-substituted surface is discussed in detail. There is clearly a synergy effect between the substitution of N for O_s(I) and the adsorption of Au atoms on the SrTiO₃(0 0 1) surface.     

First-principles study of the structural, magnetic, and electronic properties of LiMBO3 (M = Mn, Fe, Co)

We present a first-principles calculation for the structural, magnetic, and electronic properties of LiMBO₃ (M = Mn, Fe, Co). Along the [0 0 1] direction, transition metals shows antiferromagnetic coupling in LiMBO₃ of both hexagonal and monoclinic lattices. The calculated magnetic moment of 5μB per formula unit is close to the experimental value. These compounds are semiconductors with band gap of 0.4-2 eV, and with average intercalation voltages of 2-4.8 V.     

First-principle study on the electronic and optical properties of Mn-doped SnO2

Using the full-potential linearized augmented plane wave method (FP-LAPW), we have investigated the electronic and optical properties of Sn_1−xMn_xO₂ (x=0, 0.0625, 0.125, 0.1875, 0.25). The doped Mn results in reduction of the band gap, which can be attributed to a series of impurity bands at the bottom of the conduction band caused by the strong hybridization between Mn 3d and O 2p. The results also show that the Mn-doped systems tend to convert into p-type semiconductor with direct band gaps. With the increase of Mn concentration, both the imaginary part of dielectric function and the absorption spectrum show red-shift corresponding to the change of band gaps.