Effect of substitution of Co ions on the structural and electrical properties of nanosized magnesium aluminate

Cobalt substituted nanosized magnesium aluminates having a nominal composition MgAl_2−xCo_xO₄ where x = 0.0, 0.5, 1.0, 1.5, 2.0 were synthesized by the chemical co-precipitation method. Aluminium (Al³⁺) ions were completely and successfully substituted by Co²⁺ ions, which yielded an electron rich terminal compound MgCo₂O₄. All the samples were characterized by means of X-ray diffraction (XRD), thermogravimetry and differential thermal analysis (TG/DTA) and dc electrical resistivity measurements. The investigated samples were found to be spinel single phase cubic close packed crystalline materials as demonstrated by XRD data. Using the Debye Scherer formula, the calculated crystallite size was found Co²⁺ concentration dependent and varied between 7 and 19 nm. The lattice constant, X-ray density and bulk density were found to increase while percentage porosity decreases on increasing the Co²⁺ concentration. The dc electrical resistivity was found to decrease as a function of temperature as expected for a typical semiconductor. The doped Co²⁺ ions are believed to form small polarons and hopping of these small polarons between the adjacent sites seems to be partially responsible for conduction in the system. The activation energy of hopping of small polarons was also calculated.     

Transport behavior and mechanism of conduction of simultaneously substituted Y and Fe in La0.7Ba0.3MnO3 perovskite

The electrical properties and the mechanism of conduction of the simultaneously substituted La_0.7−xY_xBa_0.3Mn_1−xFe_xO₃ perovskite (0≤x≤0.30) have been studied. The insertion of Y³⁺ and Fe³⁺ ions in the parent compound La_0.7Ba_0.3MnO₃ leads to an increase of the resistivity. The undoped sample (x=0) shows a metallic behavior, which can be fitted by the relation ρ(T)=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of electron-magnon scattering effects in this material. All the other samples (x≥0.10) are semiconductors throughout the studied temperature range (80-290 K). Several models have been used to fit their temperature-dependent resistivity: thermal activation, adiabatic nearest-neighbor hopping of small polarons (Holstein theory) and variable range hopping (VRH) models. The fits show that the electronic transport in semiconducting La_0.7−xY_xBa_0.3Mn_1−xFe_xO₃ is well described and dominated by the VRH mechanism, for which the hopping distance (a) grows with increasing Fe³⁺ doping, thus increasing the average hopping energy W.     

Non-adiabatic polaron hopping conduction in CaMn1−xCrxO3 (0?x?0.3)

DC electrical conductivity (σ_dc) of electron-doped antiferromagnetic CaMn_1−xCr_xO₃ (0?x?0.3) has been discussed elaborately in the light of polaron hopping conduction. The increase in Cr doping concentration increases the conductivity and decreases the activation energy. Non-adiabatic polaron hopping conduction is observed in all the manganites at high temperatures. The analysis of σ_dc data shows that small polarons are formed at lower concentrations (?5%) of Cr doping and undoped samples. However, large polarons are materialized at higher doping (?10%) concentrations. This is consistent with the fact that doped Cr³⁺ has larger ionic size compared to that of Mn⁴⁺. Again, strong electron-phonon (e-ph) interaction is perceived in undoped and 5% Cr-doped samples but not in manganites with larger doping concentration. This also confirms the formation of larger polarons with the increase of x. Mott's variable range hopping (VRH) model can elucidate the dc conductivity at very low temperatures. It has been detected that single phonon-assisted hopping is responsible for the dc conduction in the Cr-doped CaMnO₃ manganites.     

Electrical properties and spin fluctuations studies of Y(Co1−xNix)2 compounds

Synthesis by arc melting, the structural and the electric properties of Y(Co_1−xNi_x)₂ alloys were studied by X-ray diffraction (XRD) and four probe dc electrical measurements. XRD analysis (300 K) shows that all samples crystallize in a cubic MgCu₂-type structure. The lattice parameters linearly decrease with Ni content. Electrical resistivity for the Y(Co_1−xNi_x)₂ intermetallic series was measured in a temperature range of 15-1100 K. The parameters involved in the dependence of resistivity on temperature were determined. Residual, phonon and spin fluctuations resistivity were separated from electrical resistivity using both the Matthiesen formula and the Bloch-Gruneisen formula. The spin fluctuations resistivity of the Y(Co_1−xNi_x)₂ series are compared to the mean square amplitudes of spin fluctuations previously calculated by the Linear Muffin Tin Orbital-Tight Binding Approach method for these series in the literature. The contribution of spin fluctuations to total resistivity ρ_sf is proportional to T² at low temperatures. The proportionality parameter strongly reduces across the Y(Co_1−xNi_x)₂ series.     

Structure and superconductivity of Mg1−xPbxB2

A series of polycrystalline samples of Mg_1−xPb_xB₂ (0≤x≤0.10) were prepared by a solid state reaction method and their structure, superconducting transition temperature and transport properties were investigated by means of X-ray diffraction (XRD) and resistivity measurements. Mg_1−xPb_xB₂ compounds were shown to adopt an isostructural AlB2-type hexagonal structure in a relatively small range of lead concentration, x≤0.01. The crystalline lattice constants were evaluated and were found to exhibit slight length compression as x increases. The superconducting transition temperature (T_c) steadily decreases with Pb doping. It is suggested that the mechanism of superconductivity reduction by lead doping can be attributed to the chemical pressure effect.     

Preparation and optical properties of Ce activated (Ca1 − x,Srx)Al2Si2O8 phosphors

(Ca_1 − x, Sr_x)Al₂Si₂O₈:0.06Ce³⁺, M⁺ (M⁺ = Li⁺, Na⁺, K⁺) phosphors have been prepared by conventional solid-state reaction method. The structural and optical properties of the phosphors were characterized by X-ray diffraction (XRD) technique and spectrophotometer, respectively. A regular variation was found among the XRD patterns of (Ca_1 − x, Sr_x)Al₂Si₂O₈:0.06Ce³⁺ phosphors based on the changing of Sr content. With the increase of Sr content, the maximum of emission band presented slight blue shifts (~ 15 nm). The luminescence intensity of CaAl₂Si₂O₈:0.06Ce³⁺ and SrAl₂Si₂O₈:0.06Ce³⁺ were significantly enhanced when K⁺ and Li⁺ were incorporated, respectively.     

Electronic conductivity and thermopower of Ca2NaMg2V3O12−x garnet

Results are reported from conductivity and thermoelectric power measurements on partially reduced Ca₂NaMg₂V₃O_12?x, with x < 5.10^?2, at temperatures of 300–1100 K. The conductivity is thermally activated with activation energies 0.26 ? E_a ? 1.28 eV for differently reduced samples. The thermopower is temperature independent in the 300–800 K region. These results are shown to be consistent with the adiabatic hopping of small polarons localised on the vanadium sublattice, where defect interactions result in the formation of multiple conduction pathways.     

Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15

We report electric and magnetic properties of oxygen deficient Ba_5−xLa_xNb_4−xTi_xO_15−δ phases, which have been prepared by solid-state reaction method followed by a controlled reduction process under hydrogen atmosphere. The extra electrons added by the formation of the oxygen vacancies (δ) introduce localized spins and the magnetic susceptibility can be described by a temperature-independent contribution and a Curie-Weiss term associated to the Ti³⁺ ion formation. Besides, the experimental resistivity (ρ) data of these four reduced compounds are well described in a wide temperature range with the equation , which suggests the presence of small polarons in the system. Although, all samples present electrical insulating behavior, the electrical resistivity decreases four orders of magnitude for intermediate x values. We interpreted this fact as a consequence of the mix between the localized bands of the Nb and Ti ions, which favors the promotion of carriers due to reduction of the band gap.     

Characterization and electrical properties of V2O5-CuO-P2O5 glasses

Characterization and electrical properties of vanadium-copper-phosphate glasses of compositions xV₂O₅-(40−x)CuO-60P₂O₅ have been reported. X-ray diffraction (XRD) confirms the amorphous nature of these glasses. It was observed that, the density (d) decreases gradually while the molar volume (V_m) increases with the increase of the vanadium oxide content in such glasses. This may be due to the effect of the polarizing power strength, PPS, which is a measure of ratio of the cation valance to its diameter. The dc conductivity increases while the activation energy decreases with the increase of the V₂O₅ content. The dc conductivity in the present glasses is electronic and depends strongly upon the average distance, R, between the vanadium ions. Analysis of the electrical properties has been made in the light of small polaron hopping model. The parameters obtained from the fits of the experimental data to this model are reasonable and consistent with glass composition. The conduction is attributed to non-adiabatic hopping of small polaron.     

Local structures and transport properties of K ions in a hollandite superstructure KxMg(8 + x)/3Sb(16 − x)/3O16

Possible local structures of K ions in the tunnel of a hollandite superstructure K_xMg_(8 + x)/3Sb_{(16 − x)/3}O₁₆ (x ≈ 1.76) were presented, and the validity of the models was confirmed by the structure refinement using single-crystal X-ray diffraction data. Additional constraint conditions were introduced in refinements so that the average structure obtained from the refinement is consistent with assumed microscopic pictures. Joint-probability density functions were calculated for specific K ions concerning the hopping process between neighboring cavities, and converted to the one-particle potentials. Three types of the energy barrier for the hopping process were seen, which were uniformly reduced applying the anharmonic atomic displacement parameters.     

Structure and magnetic entropy change of suck-cast Gd60Co26Al6Ge8 alloy

The Gd₆₀Co₂₆Al₆Ge₈ alloy has been prepared by the copper-mold suck-casting and its phase component has been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). It is shown that this alloy consists of primary crystalline Gd₅Ge₃ phase and amorphous matrix. The glass transition temperature (T_g) and crystallization temperatures (T_x) occur at 292 and 320 °C, respectively. The maximal magnetic entropy change (ΔS_M) under 0-5 T field is about 7.6 J (kg⁻¹ K⁻¹) at 155 K and the refrigeration capacity (RC) is about 768 J kg⁻¹, which makes Gd₆₀Co₂₆Al₆Ge₈ bulk metallic glass matrix composite a promising candidate for magnetic refrigerant.     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

Electrical transport of (1−x)La0.7Ca0.3MnO3+xAl2O3 composites

We report the resistivity (ρ)-temperature (T) patterns in (1-x)La_0,7Ca_0,3MnO₃+xAl₂O₃ composites (0≤x≤0.05) over a temperature regime of 50-300 K. Al₂O₃ addition has increased the resistivity of these composites. The Curie temperature (T_C) is almost independent on the Al₂O₃ content and is about 250 K for all the samples, while the metal-insulator transition temperature (T_MI) decreases with increasing Al₂O₃ content. Based on the phenomenological equation for conductivity under a percolation approach, which is dependent on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the experimental data (ρ−T) from 50 to 300 K and find that the activation barrier increases as Al₂O₃ content increases.     

Structural and electrical characterization of SxSe100−x thin films

Thin films of samples of the glassy S_xSe_100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system S_xSe_100−x were discussed. The characteristic temperatures (T_g, T_c and T_m) were evaluated. Dark electrical resistivities, ρ, of S_xSe_100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.     

Influence of Al2O3 additions on crystallization mechanism and conductivity of Li2O-Ge2O-P2O5 glass-ceramics

The crystallization mechanism and conductivity of lithium aluminum germanium phosphate [LAGP] glass-ceramics fabricated from Li_1+xAl_xGe_2−x(PO₄)₃ (x=0.0-0.7) glass system were investigated as a function of Al₂O₃ additions. A non-isothermal analysis was performed to study the crystallization behavior of LAGP glass-ceramics at various heating rates (5-25K min⁻¹) by the Kissinger equation and the Augis-Bennett equation, illustrating volume crystallization for the glass-ceramics. The crystal identification and microstructure in glass-ceramics containing various Al₂O₃ contents were analyzed by means of XRD and FESEM. The main phase of the glass-ceramics was found to be LiGe₂(PO₄)₃, with AlPO₄ as the impurity phase. Additionally the highest total ionic conductivity (5.8×10⁻⁴ S/cm) at room temperature was obtained when x=0.5 for Li_1+xAl_xGe_2−x(PO₄)₃ (x=0.0-0.7) glass-ceramics, suggesting that it was a promising electrolyte for practical application in all-solid-state lithium batteries.     

Electrical conduction and magnetoelectric effect of (x) BaTiO3 + (1−x) Ni0.92Co0.03Cu0.05Fe2O4 composites in ferroelectric rich region

Particulate composites with composition (x)BaTiO₃+(1−x)Ni_0.92Co_0.03Cu_0.05Fe₂O₄ in which x varies as 1, 0.85, 0.70, 0.55 and 0 (in mol%) were prepared by the conventional double sintering ceramic technique. The presence of two phases viz. ferromagnetic (Ni_0.92Co_0.03Cu_0.05Fe₂O₄) and ferroelectric (BaTiO₃) was confirmed by X-ray diffraction analysis. The dc resistivity and thermo-emf measurements were carried out with variation of temperature. The ac conductivity (σ_ac) measurements investigated in the frequency range 100 Hz to 1 MHz conclude that the conduction in these composites is due to small polarons. The variation of dielectric constant and loss tangent with frequency (20 Hz to 1 MHz) was studied. The static magnetoelectric conversion factor, i.e. dc (dE/dH)_H was measured as a function of intensity of applied magnetic field. The changes were observed in electrical properties as well as in magnetoelectric voltage coefficient as the molar ratio of the constituent phases was varied. A maximum value of magnetoelectric conversion factor of 536.06 μV/cm Oe was observed for the composite with 70% BaTiO₃+30% Ni_0.92Co_0.03Cu_0.05Fe₂O₄ at a dc magnetic field of 2.3 K Oe. The maximum magnetoelectric conversion output has been explained in terms of ferrite-ferroelectric content, applied static magnetic field and resistivity.     

Structure, electric and dielectric studies of indium-substituted magnesium copper manganese ferrites

The structure, electric and dielectric properties of In-substituted Mg-Cu-Mn ferrites having the general formula of Mg_0.9Cu_0.1Mn_0.1In_xFe_1.9−xO₄ with 0.0≤x≤0.4 have been studied. X-ray diffraction (XRD) patterns of the samples indicated the formation of single-phase cubic spinel structure up to 0.2 and mixed phase (cubic and tetragonal phase) for samples x≥0.3. The relation of conductivity with temperature revealed a semiconductor to semimetal behavior as In⁺³ concentration increases. Variation in the universal exponent s with temperature indicates the presence of two hopping conduction mechanisms: the correlated barrier hopping (CHB) at low In⁺³ content x≤0.1 and small-polaron (SP) hopping at In⁺³ content x≥0.2. The variation in dielectric permittivity (ε′, ε″) with temperature at different frequencies shows a normal behavior for the studied compounds, while the variation in dielectric loss tangent with frequency at different temperatures shows abnormal behavior with more than relaxation peak. The conduction mechanism used in the present study has been discussed in the light of electron exchange between Fe³⁺ and Fe²⁺ ions and hole hopping between Mn²⁺ and Mn³⁺ ions at the octahedral B-sites.     

Substitutional effect of Cr ions on the properties of Mg–Zn ferrite nanoparticles

The effect of Cr³⁺ substitution in Mg–Zn ferrite, with a chemical formula Mg_0.5Zn_0.5Cr_xFe_2−xO₄ (x=0.0–1.0), synthesized by a sol–gel auto-combustion reaction is presented in this paper. The resultant powders were investigated by various techniques, including X-ray diffractometry (XRD), transmission electron microscopy (TEM), infrared spectroscopy (IR), vibrating sample magnetometry (VSM), and DC resistivity. The XRD pattern revealed that the cubic spinel structure is maintained for the all the compositions. The particle sizes measured from XRD and TEM are in good agreement with each other. The cation distribution suggests that Mg²⁺, Cr³⁺ and Fe³⁺ have strong preference towards octahedral B-site. The theoretical lattice constant and experimental lattice constant match each other very well. The IR analysis supports the presently accepted cation distribution. The saturation magnetization decreases linearly with increasing Cr³⁺ content. Curie temperatures are obtained by the Laoria and AC susceptibility techniques. The dc resistivity has been investigated as a function of temperature and composition.     

DC and AC conductivities of (As2S3)100−x(AsSe0.5Te0.5I)x chalcogenide glasses

The DC and AC conductivities of samples from the system (As₂S₃)_100−x(AsSe_0.5Te_0.5I)_x, where x=0, 5, 10, 15, 20, 25, 30, 35, 50, 70 and 90 mol%, were measured as a function of temperature. Besides, the AC conductivities of the samples with x=10 and 30 were measured as a function of frequency from room temperature to the glass transition temperature. The DC conductivity dependence on temperature is of the Arrhenius type, whereas the value of the pre-exponential factor suggests the electrical conduction by localized states in the band tails and by localized states near the Fermi level. The small values of the conduction activation energy (10⁻²-10⁻¹ eV) obtained at higher frequencies suggest that the conduction in these materials is due to hopping of charge carriers between close defect states near the Fermi level.     

Coordination of Mg2+ in oxide glasses determined by x-Ray emission spectroscopy

Chemical shifts of K_{α 1.2} of Mg²⁺ having octahedral or tetrahedral coordination in several oxide crystals were systematically measured using a high resolution spectrometer of the 2-crystal type. The shift between the emissions from 6- and 4-coordinated Mg²⁺ was small (≈0.25eV), but large enough to be measured, with the peak energy for 6-coordinated Mg²⁺ being higher. The fact is in accordance with the well established relation for Al³⁺. A nearly linear relation was obtained between the shift and Lewis basicity of the oxides. The relation was applied to the determination of the coordination number of Mg²⁺ in borate and silicate glasses. Magnesium in xK₂O·yMgO·(100?x?y)B₂O₃ glasses (x + y?40 mol%) was found to be in 6-coordination, while in the glass 25K₂O·25MgO·50SiO₂ it was found to be in 4-coordination. These results agreed well with expectations from the chemical shift-basicity relationship.