Effect of Cr substitution on the multiferroic properties of BiFe1 − xCrxO3 compounds

Single-phase BiFe_1 − xCr_xO₃ (x=0, 0.05 and 0.1) compounds are synthesized by a sol-gel process. The lattice parameters decrease and the magnetizations increase with the Cr content. Moreover, the magnetoelectric coupling between magnetic order and ferroelectric order at room temperature was enhanced.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Magnetic and transport property studies of nanocrystalline ZnxFe3−xO4

The magnetic and transport properties of nanocrystalline Zn_xFe_3−xO₄ with x=0.0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0, respectively, fabricated by the sol-gel method have been investigated. Large magnetoresistance (MR) was observed and found to be originated both from the tunneling of the spin-polarized electrons across the adjacent ferromagnetic grains and the scattering by the canted spins at the grain surface near the grain boundaries. It has been revealed that the MR for the Zn_xFe_3−xO₄ samples (x=0, 0.5 and 1.0) increases with the temperature decreasing from room temperature until a maximum is reached at around 55 K. Then a sharp drop occurs with the further decrease in temperature, regarded as a spin (cluster) glass transition. For the samples studied, a biggest low field (0.5 T) MR value of about 20% for x=0 at 55 K has been obtained. The mechanism of the MR behavior of the materials was discussed.     

Magnetic/structural phase diagram and enhanced giant magnetoresistance in Zn-doped antiperovskite compound Ga1−xZnxCMn3

The structural, magnetic and electrical transport properties of Zn-doped antiperovskite compounds Ga_1−xZn_xCMn₃ (0≤x≤0.30) have been investigated. After partial substitution of Zn for Ga, the Curie temperature increases monotonously and the ground antiferromagnetic (AFM)-ferromagnetic intermediate (FI) phase transition is gradually suppressed. With increasing the doping level x, the saturated magnetizations decreases gradually firstly for x≤0.20, then increases with increasing x. The electrical transport properties of Ga_1−xZn_xCMn₃ are studied at different magnetic fields. Enhanced giant magnetoresistance (GMR) was observed around the AFM-FI transition. With increasing x, the maximal values and peak widths of GMR increase. Particularly, for x=0.20, GMR reaches a maximum value of 75%, spanning a temperature range of 80 K at 50 kOe and displays the behavior of strongly depending on the magnetization history. The possible origins are discussed.     

Magnetic entropy change in GdCo13−xSix intermetallic compounds

The magnetic entropy change in GdCo_13−xSi_x (x=3.8, 4, 4.1, and 4.2) intermetallic compounds has been investigated by means of magnetic measurements in the vicinity of their Curie temperature. It was found that the magnetic ordering temperatures decrease from 60 K at x=3.8 to 28 K for x=4.2. The magnetic entropy change is calculated from isothermal magnetization versus magnetic field at various temperatures using the Maxwell relation. As a result, the maximum magnetic entropy changes of the investigated compounds, at their Curie temperatures, decrease from 11.5 J/kg K for x=4.2 to 6.86 J/kg K for x=3.8 in a field change of 0-3 T, whereas it decreases from 5.13 J/kg K for x=4.2 to 2.60 J/kg K for x=3.8 in a field change of 0-1 T. Moreover, the maximum value of the magnetic entropy change obtained at a higher field for GdCo_13−xSi_x with x=4 (23.75 J/kg K at 5 T) is comparable to that of various types of compounds with a cubic NaZn₁₃-type structure. Finally, the maximum of the magnetic entropy change is found to decrease with increasing Si content.     

Hf1−xSixOy dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD)

Hf_1−xSi_xO_y is an attractive candidate material for high-k dielectrics. We report in this work the deposition of ultra-thin Hf_1−xSi_xO_y films (0.1 ≤ x ≥ 0.6) on silicon substrate at 450 °C by UV-photo-induced chemical vapour deposition (UV-CVD) using 222 nm excimer lamps. Silicon(IV) and hafnium(IV) organic compounds were used as the precursors. Films from around 5 to 40 nm in thickness with refractive indices from 1.782 to 1.870 were grown. The deposition rate was found to be of 6 nm/min at a temperature of 450 °C. The physical, interfacial and electrical properties of hafnium silicate (Hf_1−xSi_xO_y) thin films were investigated by using X-ray photoelectron spectroscopy, ellipsometry, FT-IR, C-V and I-V measurements. XRD showed that they were basically amorphous, while Fourier transform infrared spectroscopy (FT-IR), clearly revealed Hf-O-Si absorption in the photo-CVD deposited Hf_1−xSi_xO_y films. Surface and interfacial properties were analysed by TEM and XPS. It is found that carbon content in the films deposited by UV-CVD is very low and it also decreases with increasing Si/(Si + Hf) ratio, as low as about 1 at.% at the Si/(Si + Hf) ratio of 60 at.%.     

Magnetic/structural diagram, chemical composition-dependent magnetocaloric effect in self-doped antipervoskite compounds Sn1−xCMn3+x (0≤x≤0.40)

The effects of Mn substitutions on the crystal structure, magnetic properties, and magnetocaloric effect (MCE) of antiperovskite Sn_1−xCMn_3+x (0≤x≤0.40) have been investigated detailedly. Both the Curie temperature (T_C) and the magnetizations at 40 kOe decrease with increasing x firstly for x≤0.10, and then increase with increasing x further. The type of magnetic transition changes from first-order to second-order around x=0.10 with increasing x. Chemical composition-dependent MCE is also studied around T_C. With increasing x, the maximal magnetic entropy changes decrease and the magnetic phase transitions broaden. Accordingly, the relative cooling power (RCP) increases with increasing x, reaching the largest values of ∼0.56 J/cm³ (∼75 J/kg) and ∼1.66 J/cm³ (∼221 J/kg) with the magnetic changes of 20 kOe and 48 kOe, respectively. Considering the large RCP, inexpensive, and innoxious raw materials, these serial samples Sn_1−xCMn_3+x are suggested to be potential room-temperature magnetic refrigerant materials.     

Room-temperature ferromagnetism in Zn1−xMnxO

In view of recent controversies on above room-temperature ferromagnetism (RTFM) in transition-metal-doped ZnO, the present paper aims to shed some light on the origin of ferromagnetism by investigating annealing effects on structure and magnetism for polycrystalline Zn_1−xMn_xO powder samples prepared by solid-state reaction method and annealed in air at different temperatures. Magnetic measurements indicate that the samples are ferromagnetic at room temperature (RTFM). Room temperature ferromagnetism has been observed in the sample annealed at a low temperature of 500 °C with a saturated magnetization (M_s) of 0.159 emu/g and a coercive force of 89 Oe. A reduction in RTFM is clearly observed in the sample annealed at 600 °C. Furthermore, the saturation magnetic moment decreases with an increase in grain size, suggesting that ferromagnetism is due to defects and/or oxygen vacancy confined to the surface of the grains. The experimental results indicate that the ferromagnetism observed in Zn_1−xMn_xO samples is intrinsic rather than associated with secondary phases.     

Near room temperature magnetocaloric properties of melt-spun Gd100−xBx (x=0, 5, 10, 15, and 20 at%) alloys

The magnetocaloric properties of melt-spun Gd-B alloys were examined with the aim to explore their potential application as magnetic refrigerants near room temperature. A series of Gd_100−xB_x (x=0, 5, 10, 15, and 20 at%) alloys were prepared by melt spinning. With the decrease in Gd/B ratio, Curie temperature (T_C) remains constant at ∼293 K, and saturation magnetization, at 275 K, decreases from ∼100 to ∼78 emu/g. Negligible magnetic hysteresis was observed in these alloys. The peak value of magnetic entropy change, (−ΔS_M)_max, decreased from ∼9.9 J/kg K (0-5 T) and ∼5.5 J/kg K (0-2 T) for melt-spun Gd to ∼7.7 J/kg K (0-5 T) and ∼4.0 J/kg K (0-2 T), respectively for melt-spun Gd₈₅B₁₅ and Gd₈₀B₂₀ alloys. Similarly, the refrigeration capacity (q) decreased monotonously from ∼430 J/kg (0-5 T) for melt-spun Gd to ∼330 J/kg (0-5 T) for melt-spun Gd₈₀B₂₀ alloy. The near room temperature magnetocaloric properties of melt-spun Gd_100−xB_x (0≤x≤20) alloys were found to be comparable to few first-order transition based magnetic refrigerants.     

Magnetic transitions in Ni1−xMox and Ni1−xWx disordered alloys

We present a mean-field study of the magnetic phase diagram of Ni_1−xMo_x and Ni_1−xW_x alloys. The pair energies that enter the internal energy part of the free energy are obtained from a first-principles calculation. We try to understand why spin-glass phase is not observed in these alloys.     

Magnetocaloric properties of LaFe13−x−yCoxSiy and commercial grade Gd

The magnetocaloric properties of three samples of LaFe_13−x−yCo_xSi_y have been measured and compared to measurements of commercial grade Gd. The samples have (x=0.86, y=1.08), (x=0.94, y=1.01) and (x=0.97, y=1.07) yielding Curie temperatures in the range 276-288 K. The magnetization, specific heat capacity and adiabatic temperature change have been measured over a broad temperature interval. Importantly, all measurements were corrected for demagnetization, allowing the data to be directly compared. In an internal field of 1 T the maximum specific entropy changes were 6.2, 5.1 and 5.0 J/kg K, the specific heat capacities were 910, 840 and 835 J/kg K and the adiabatic temperature changes were 2.3, 2.1 and 2.1 K for the three LaFeCoSi samples respectively. For Gd in an internal field of 1 T the maximum specific entropy change was 3.1 J/kg K, the specific heat capacity was 340 J/kg K and the adiabatic temperature change was 3.3 K. The adiabatic temperature change was also calculated from the measured values of the specific heat capacity and specific magnetization and compared to the directly measured values. In general an excellent agreement was seen.     

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Hydrogenated amorphous SiC films (a-Si_1−xC_x:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_1−xC_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_1−xC_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_0.80C_0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_1−xC_x:H) has been investigated.     

Analysis of the Ge1−xCx films deposited by MFMST

Ge_1−xC_x films deposited by using a medium frequency magnetron sputtering technique (MFMST) were analyzed with X-ray photoelectron and Raman spectroscopy. The deposited Ge_1−xC_x films consist of C, Ge, GeC and GeO_y. The GeC content in the Ge_1−xC_x films linearly decreases, and the C content linearly increases with increasing deposition temperature from 150 to 350 °C. The GeC content decreases from 11.6% at a substrate bias of 250 V to a lowest value of 9.6% at 350 V, then increases again to 10.4% at 450 V. While the C content increases from 49.0% at the bias of 250 V to a largest value of 58.0% at 350 V and then maintains this level at 450 V. It is found that selecting a bias parameter seems more effective than deposition temperature if we want to obtain a higher content of GeC in the deposited films. In addition, a new method is presented in this paper to estimate the changes of GeC content in the Ge_1−xC_x films by observing the shifts of Ge-Ge LO phonon peak in Raman spectra for the Ge_1−xC_x films. The related mechanism is also discussed in this paper.     

Synthesis, characterization and electromagnetic properties of Fe1−xCox alloy flower-like microparticles

Fe_1−xCo_x alloy microparticles with size 3-5 μm and novel flower-like shapes were prepared by a simple low temperature reduction method. The electromagnetic properties for the paraffin matrix composites containing Fe_1−xCo_x alloy microparticles were measured using a vector network analyzer in the 2-18 GHz frequency range. As a consequence of large surface- and shape-anisotropy energy for the flower-like shaped 3D microstructures, the strong natural resonance around 8-12 GHz and remarkable dielectric relaxation were observed in the complex permittivity and permeability spectrum, which are dominant in the enhanced electromagnetic wave absorption (EMA) performance. It was found that both the electromagnetic parameters of complex permittivity and permeability and the intensity and location of absorption band were remarkably dependent on the Co/Fe molar ratio. The enhanced EMA performance was obtained in these Fe_1−xCo_x-paraffin (x=0.4, 0.5, and 0.6) composites system. For the Fe_0.5Co_0.5 alloy, the reflection loss (RL) exceeding −20 dB was obtained in the broad frequency range of 5.4-18 GHz with a thin sample thickness of between 1.0 and 2.9 mm. In particular, an optimal RL of −59 dB was obtained at 3.61 GHz with a thin thickness of 3.6 mm for the Fe_0.4Co_0.6 sample. The Fe_1−xCo_x alloy microparticles may be attractive candidates for applications of microwave absorption materials with a wide frequency range and strong absorption in the high frequency region.     

High-temperature electrical properties of magnesiowustite Mg1 − xFexO and spinel Fe3 − x − yMgxCryO4 ceramics

Phase relationships, thermal expansion and electrical properties of Mg_1 − xFe_xO (x = 0.1-0.45) cubic solid solutions and Fe_{3 − x − y}Mg_xCr_yO_4 ± δ (x = 0.7-0.95; y = 0 or 0.5) spinels were studied at 300-1770 K in the oxygen partial pressure range from 10 Pa to 21 kPa. Increasing iron content enlarges the spinel phase stability domain at reduced oxygen pressures and elevated temperatures. The total conductivity of the spinel ceramics is predominantly n-type electronic and is essentially p(O₂)-independent within the stability domain. The computer simulations using molecular dynamics technique confirmed that overall level of ion diffusion remains low even at high temperatures close to the melting point. Temperature dependencies of the total conductivity in air exhibit a complex behavior associated with changing the dominant defect-chemistry mechanism from prevailing formation of the interstitial cations above 1370-1470 K to the generation of cation vacancies at lower temperatures, and with kinetically frozen cation redistribution in spinel lattice below 700-800 K. The average thermal expansion coefficients of the spinel ceramics calculated from dilatometric data in air vary in the range (9.6-10.0) × 10^− 6 K^− 1 at 300-500 K and (13.2-16.1) × 10^− 6 K^− 1 at 1050-1370 K. Mg_1 − xFe_xO solid solutions undergo partial decomposition on heating under oxidizing and mildly reducing conditions, resulting in the segregation of spinel phase and conductivity decrease.     

BiFeO3/Zn1−xMnxO bilayered thin films

BiFeO₃/Zn_1−xMn_xO (x = 0-0.08) bilayered thin films were deposited on the SrRuO₃/Pt/TiO₂/SiO₂/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P_r ∼ 121.0-130.6 μC/cm² was measured for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO (x = 0.04) bilayer exhibits a highest M_s value of ∼15.2 emu/cm³, owing to the presence of the magnetic Zn_0.96Mn_0.04O layer with an enhanced M_s value.     

Theoretical investigation of the conduction and valence band offsets of GaAs1−x Nx/GaAs1−yNy heterointerfaces

Theoretical investigations of the conduction band offset (CBO) and valence band offset (VBO) of the relaxed and pseudo-morphically strained GaAs_1−xN_x/GaAs_1−yN_y heterointerfaces at various nitrogen concentrations (x and y) within the range 0-0.05 and along the [0 0 1] direction are performed by means of the model-solid theory combined with the empirical pseudopotential method under the virtual crystal approximation that takes into account the effects of the compositional disorder. It has been found that for y < x, the CBO and VBO have negative and positive signs, respectively, whereas the reverse is seen when y > x. The band gap of the GaAs_1−xN_x over layer falls completely inside the band gap of the substrate GaAs_1−yN_y and thus the alignment is of type I (straddling) for y < x. When y > x, the alignment remains of type I but in this case it is the band gap of the substrate GaAs_1−yN_y which is fully inside the band gap of the GaAs_1−xN_x over layer. Besides the CBO, the VBO and the relaxed/strained band gap of two particular cases: GaAs_1−xN_x/GaAs and GaAs_1−xN_x/GaAs_0.98N_0.02 heterointerfaces have been determined.     

Characterization and properties of ZnO1−xSx alloy films fabricated by radio-frequency magnetron sputtering

A series of ZnO_1−xS_x alloy films (0 ≤ x ≤ 1) were grown on quartz substrates by radio-frequency (rf) magnetron sputtering of ZnS ceramic target, using oxygen and argon as working gas. X-ray diffraction measurement shows that the ZnO_1−xS_x films have wurtzite structure with (0 0 2) preferential orientation in O-rich side (0 ≤ x ≤ 0.23) and zinc blende structure with (1 1 1) preferential orientation in S-rich side (0.77 ≤ x ≤ 1). However, when the S content is in the range of 0.23 < x < 0.77, the ZnO_1−xS_x film consists of two phases of wurtzite and zinc blende or amorphous ZnO_1−xS_x phase. The band gap energy of the films shows non-linear dependence on the S content, with an optical bowing parameter of about 2.9 eV. The photoluminescence (PL) measurement reveals that the PL spectrum of the wurtzite ZnO_1−xS_x is dominated by visible band and its PL intensity and intensity ratio of UV to visible band decrease greatly compared with undoped ZnO. All as-grown ZnO_1−xS_x films behave insulating, but show n-type conductivity for w-ZnO_1−xS_x and maintain insulating properties for β-ZnO_1−xS_x after annealed. Mechanisms of effects of S on optical and electrical properties of the ZnO_1−xS_x alloy are discussed in the present work.     

The magnetic susceptibility of hydrogen-doped partially crystalline (Zr76Ni24)1−xHx metallic glasses

The magnetizations of Zr₇₆Ni₂₄ metallic glass and hydrogen-doped partially crystalline (Zr₇₆Ni₂₄)_1−xH_x metallic glasses have been measured in the temperature range 10-300 K and magnetic fields up to 2 T for various dopant concentrations (x=0, 0.024, 0.043, 0.054). It is found that the samples are paramagnetic and magnetic susceptibility at room temperature, χ(300 K), shows a nonmonotonic behaviour upon hydrogenation. The values of χ(300 K) of the hydrogen-doped partially crystalline (Zr₇₆Ni₂₄)_1−xH_x metallic glasses are reduced with increase in hydrogen content up to x=0.043, whereas for x=0.054, an enhancement of χ(300 K) has been revealed. The magnetic susceptibility is weakly temperature dependent down to 110 K, below which an increase is observed. A shallow minimum exists between 90 and 120 K. The form and magnitude of the observed temperature dependence of the magnetic susceptibility are well accounted for by the sum of the quantum corrections to the magnetic susceptibility. Hydrogen reduces the electronic diffusion constant and influences strongly the quantum interference at defects, slowing down the spin diffusion and enhancing the magnetic susceptibility in the temperature range from 110 down to 10 K.     

Phase and electrical behaviour in the Bi14W1 − xLaxO24 − 3x/2 system

The compositional and thermal dependencies of phase and electrical behaviour of compositions in the system Bi₁₄W_1 − xLa_xO_{24 − 3x/2} (0.00 < x < 1.00) have been studied by X-ray powder diffraction, differential thermal analysis and a.c. impedance spectroscopy. The system exhibits polymorphism and phase separation, which shows both compositional and thermal dependence. Compositions with x = 0.25 and x = 0.50 exhibit a single phase tetragonal structure at room temperature. In contrast, the x = 0.75 composition at room temperature shows a mixture of a cubic phase and a secondary β-Bi₂O₃ related tetragonal phase. A full solid solution is observed at high temperatures, corresponding to the occurrence of a δ-Bi₂O₃ type phase. The appearance of the various phases correlates well with the observed electrical behaviour. The x = 0.75 composition exhibits exceptionally high conductivity at high temperatures (σ₈₀₀ = 1.34 S cm^− 1), but also shows significant phase separation at lower temperatures.