The structural, electronic and optical properties of CdxZn1 − xSe ternary alloys

The structural, electronic, and optical properties of Cd_xZn_1 − xSe alloys are investigated using the first-principles plane-wave pseudopotential method within the LDA approximations. In particular, the lattice constant, bulk modulus, electronic band structures, density of state, and optical properties such as dielectric functions, refractive index, extinction coefficient and energy loss function are calculated and discussed. Our results agree well with the available data in the literature.     

Effect of pressure on the energy band gaps of wurtzite GaN and AlN and electronic properties of their ternary alloys AlxGa1−xN

Using the Empirical Pseudopotential Method (EPM) combined with an improved Virtual Crystal Approximation (VCA), where the effect of compositional disorder is included as an effective periodic potential, we have calculated the electronic band structure of GaN and AlN under hydrostatic pressure up to 200 kbar and 160 kbar, respectively. The behavior of electronic properties of their alloys Al_xGa_1−xN in the wurtzite structure have been predicted at zero pressure, for the entire range of alloy concentrations.     

AlN, GaN, AlxGa1 − xN nanotubes and GaN/AlxGa1 − xN nanotube heterojunctions

Semiconductor optoelectronic devices based on GaN and on InGaN or AlGaN alloys and superlattices can operate in a wide range of wavelengths, from far infrared to near ultraviolet region. The efficiency of these devices could be enhanced by shrinking the size and increasing the density of the semiconductor components. Nanostructured materials are natural candidates to fulfill these requirements. Here we use the density functional theory to study the electronic and structural properties of (10,0) GaN, AlN, Al_xGa_1 − xN nanotubes and GaN/Al_xGa_1 − xN heterojunctions, 0<x<1. The Al_xGa_1 − xN nanotubes exhibit direct band gaps for the whole range of Al compositions, with band gaps varying from 3.45 to 4.85 eV, and a negative band gap bowing coefficient of −0.14 eV. The GaN/Al_xGa_1 − xN nanotube heterojunctions show a type-I band alignment, with the valence band offsets showing a non-linear dependence with the Al content in the nanotube alloy. The results show the possibility of engineering the band gaps and band offsets of these III-nitrides nanotubes by alloying on the cation sites.     

First principles investigation of optical properties of zinc-blende AlxGa1−xAs1−yNy materials

We have performed a first-principle Full Potential Linearized Augmented Plane Waves calculation within the local density approximation (LDA) to the zinc-blende Al_xGa_1−xAs_1−yN_y to predict its optical properties as a function of N and Al mole fractions. The accurate calculations of electronic properties such as band structures and optical properties like refractive index, reflectivity and absorption coefficient of Al_xGa_1−xAs and Al_xGa_1−xAs_1−yN_y with x≤0.375 and y up to 4% are presented. Al_xGa_1−xAs on GaAs have a lattice mismatch less than 0.16% and the lattice constant of Al_xGa_1−xAs has a derivation parameter of 0.0113±0.0024. The band gap energies are calculated by LDA and the band anticrossing model using a matrix element of C_MN=2.32 and a N level of E_N=(1.625+0.069x) eV. The results show that Al_xGa_1−xAs can be very useful as a barrier layer in separate confinement heterostructure lasers and indicate that the best choice of x and y Al_xGa_1−xAs_1−yN_y could be an alternative to Al_xGa_1−xAs when utilized as active layers in quantum well lasers and high-efficiency solar cell structures.     

Electronic and structural properties of zincblende AlxIn1−xN

Numerical calculations based on first-principles are applied to study the electronic and structural properties of ternary zincblende AlInN alloy. The results indicate the lattice constant has a small deviation from the Vegard’s law. The direct and indirect bowing parameters of 4.731 ± 0.794 eV and 0.462 ± 0.285 eV are obtained, respectively, and there is a direct-indirect crossover near the aluminum composition of 0.817. The bulk modulus is monotonically increased with an increase of the aluminum composition, and the deviation parameter of bulk modulus of 10.34 ± 9.37 GPa is obtained. On the contrary, the pressure derivative of bulk modulus is monotonically decreased with an increase of the aluminum composition.     

Electronic structure and optical properties of TbNi5−xCux

In this paper we present theoretical investigation of optical conductivity for intermetallic TbNi_5−xCu_x series. Within the framework of LSDA+U calculations, electronic structure for x=0, 1, 2 is calculated and additionally optical conductivity is obtained. Disorder effects of Cu for Ni substitution on a level of LSDA+U densities of states (DOS) are taken into account via averaging over all possible Cu ion positions in the unit cell for given doping level x. Gradual smoothing of optical conductivity structure at 2 eV together with simultaneous intensity growth at 4 eV corresponds to increase of Cu and decrease of Ni content.     

Effect of Si substitution on electronic structure and magnetic properties of Heusler compounds Co2TiAl1−xSix

The electronic structures of Co-based Heusler compounds CoTiAl_1−xSi_x (x=0, 0.25, 0.5, 0.75 and 1) are calculated by first-principles using the full potential linearized augmented plane wave (FP-LAPW) method within GGA and LSDA+U scheme. Particular emphasis was put on the role of the main group elements. In recent years, the GGA calculations of Co₂TiAl (x=0) and Co₂TiSi (x=1) indicated that they are half-metallic, but the electronic structure of this compound with x=0.25, 0.5 and 0.75 has not been reported yet, neither theoretically nor experimentally. The calculated results reveal that these are half-metallic and exhibit an energy gap in the minority spin state and also show 100% spin polarization. The substitution of Al by Si leads to an increase in the number of valence electrons, with increasing x. Our calculated results clearly show that with the Si doping, the lattice parameter linearly decreases; bulk modulus increases, and the total magnetic moment increases. The calculated energy gap in the minority spin state, using GGA scheme, was smaller than that obtained by using LSDA+U scheme. The outcomes of this research also show that the Co-3d DOS and therefore, the magnetic properties of compounds are dependent on electron concentration of the main group elements and it will affect the degree of p-d orbital occupation.     

First-principles study of structural, electronic and magnetic properties in Cd1−xFexS diluted magnetic semiconductors

In this paper, we report theoretical investigations of structural, electronic and magnetic properties of ordered dilute ferromagnetic semiconductors Cd_1−xFe_xS with x=0.25, 0.5 and 0.75 in zinc blende (B3) phase using all-electron full-potential linear muffin tin orbital (FP-LMTO) calculations within the density functional theory and the generalized gradient approximation. The analysis of band structures, density of states, total energy, exchange interactions and magnetic moments reveals that both the alloys may exhibit a half-metallic ferromagnetism character. The value of calculated magnetic moment per Fe impurity atom is found to be 4 μ_B. Moreover, we found that p-d hybridization reduces the local magnetic moment of Fe from its free space charge value of 4 μ_B and produces small local magnetic moments on Cd and S sites.     

Electronic structure and elastic constants of TiCxN1−x, ZrxNb1−xC and HfCxN1−x alloys: A first-principles study

The structural, electronic and elastic properties of TiC_xN_1−x, Zr_xNb_1−xC and HfC_xN_1−x alloys have been investigated by using the plane-wave pseudopotential method within the density-functional theory. The calculations indicate that the variations of the equilibrium lattice constants and bulk modulus with the composition are found to be linear. The calculated elastic constants C₄₄ and shear constants as a function of alloy concentration reveal the anisotropic hardness of these compounds. The partial and total density of states (DOS) for the binary and ternary compounds had been obtained, and the metallic behavior of these alloys had been confirmed by the analysis of DOS.     

Electronic structures of zigzag AlN, GaN nanoribbons and AlxGa1−xN nanoribbon heterojunctions: First-principles study

The electronic and structural properties of zigzag aluminum nitride (AlN), gallium nitride (GaN) nanoribbons and Al_xGa_1−xN nanoribbon heterojunctions are investigated using the first-principles calculations. Both AlN and GaN ribbons are found to be semiconductor with an indirect band gap, which decreases monotonically with the increased ribbon width, and approaching to the gaps of their infinite two dimensional graphitic-like monolayer structures, respectively. Furthermore, the band gap of Al_xGa_1−xN nanoribbon heterojunctions is closely related to Al (and/or Ga) concentrations. The Al_xGa_1−xN nanoribbon of width n=8 shows a continuously band gap varying from about 2.2 eV-3.1 eV as x increases from 0 to 1. The large ranged tunable band gaps in such a quasi one dimension structure may open up new opportunities for these AlN/GaN based materials in future optoelectronic devices.     

Magnetotransport, optical, and electronic subband properties in AlxGa1−xN/AlN/GaN heterostructures

The Shubnikov-de Haas (S-dH) results at 1.5 K for Al_xGa_1−xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional electron gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al_xGa_1−xAs/AlN/GaN heterostructures.     

The investigation of structural,electronic, elastic and thermodynamic properties of Gd1−xYxAuPb alloys: A first principle study

First principle calculations have been employed to investigate the effects of Y concentration, pressure and temperature on various properties of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ ($x=0,0.25,0.5,0.75,1$) alloys using density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) is used to perform the calculated results of this paper. Phase stability of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ alloys is studied using the total energy versus unit cell volume calculations. The equilibrium lattice parameters of these alloys are in good agreement with the available experimental results. The mechanical stability of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ alloys is proved using elastic constants calculations. Also, the influence of Y concentration on elastic properties of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ alloys such as Young's modulus, shear modulus, Poisson's ratio and anisotropy factor are investigated and analyzed. By considering both Pugh's ratio and Poisson's ratio, the ductility and brittleness of these alloys are studied. In addition, the total density of states and orbital's hybridizations of different atoms are investigated and discussed. Moreover, the effect of pressure and temperature on some important thermodynamic properties is investigated.     

Study on the doping stability and electronic structure of wurtzite Zn1−xCdxO alloys by first-principle calculations

An ab initio calculation based on density functional theory is applied to study the doping stability and electronic structure of wurtzite Zn_1−xCd_xO alloys. It is found that the different alloy configurations of Zn_1−xCd_xO with a given Cd content are possible thermodynamically, but having different band gaps. With increasing Cd content, the formation enthalpy of Zn_1−xCd_xO alloy increases sharply. The Cd-content dependence of the band-gap values can be fitted with a second-order polynomial. The reduction of band gap can be attributed to the contributions of the hybridization of Zn-4s and Cd-5s, the enhancement of p-d repulsion, and the tensile strain due to Cd-doping.     

Structure and magnetic properties of Ca1−x−yMgxCu2+yO3 influenced by isoelectronic substitution x

Phases of the composition Ca_1−x−yMg_xCu_2+yO₃ have been prepared for the first time. The compounds are isostructural with the known end-members CaCu₂O₃ and MgCu₂O₃ showing a two-leg spin-ladder-like connection of copper and oxygen atoms within the Cu₂O₃-layer. Opposite the spin ladders this layer is folded, which results in a long-range antiferromagnetic ordering of these phases. The Néel temperature can be adapted by variation of x in Ca_1−x−yMg_xCu_2+yO₃ between 24 and 80 K. Several structural features, which influence the magnetic ordering, are discussed.     

Sn1−xBixO2 and Sn1−xTaxO2 (0≤x≤0.75): A first-principles study

The structural, elastic, electronic and optical (x=0) properties of doped Sn_1−xBi_xO₂ and Sn_1−xTa_xO₂ (0≤x≤0.75) are studied using the first-principles pseudopotential plane-wave method within the local density approximation. The independent elastic constants C_ij and other elastic parameters of these compounds have been calculated for the first time. The mechanical stability of the compounds with different doping concentrations has also been studied. The electronic band structure and density of states are calculated and the effect of doping on these properties is also analyzed. It is seen that the band gap of the undoped compound narrowed with dopant concentration, which disappeared for x=0.26 for Bi doping and 0.36 for Ta doping. The materials thus become conductive oxides through the change in the electronic properties of the compound for x≤0.75, which may be useful for potential application. The calculated optical properties, e.g. dielectric function, refractive index, absorption spectrum, loss-function, reflectivity and conductivity of the undoped SnO₂ in two polarization directions are compared with both previous calculations and measurements.     

Theoretical research on optical properties and quantum efficiency of Ga1−xAlxN photocathodes

In order to design the optimal component structure of transmission-mode (t-mode) Ga_1−xAl_xN photocathode, the optical properties and quantum efficiency of Ga_1−xAl_xN photocathodes are simulated. Based on thin film principle, optical model of t-mode Ga_1−xAl_xN photocathodes is built. And the quantum efficiency formula is put forward. Results show that Ga_1−xAl_xN photocathodes can satisfy the need of detectors with “solar blind” property when the Al component is bigger than 0.375. There is an optimal thickness of Ga_1−xAl_xN layer to get highest quantum efficiency, and the optimal thickness is 0.3 μm. There is close relation between absorptivity and quantum efficiency, which is in good agreement with the “three-step” model. This work gives a reference for the experimental research on the Ga_1−xAl_xN photocathodes.     

Principal energy band gaps of the quaternary alloy AlxGa1−xSbyAs1−y

The correlated function expansion (CFE) interpolation procedure was presented to efficiently estimate principal energy band gaps and lattice constants of the quaternary alloy Al_xGa_1−xSb_yAs_1−y over the entire composition variable space. The lattice matching conditions between x and y for the alloy Al_xGa_1−xSb_yAs_1−y substrated to InAs and GaSb were obtained by optimizing the alloy lattice constant to that of the substrates. The corresponding principal band gaps (E(Γ), E(L), and E(X)) were also calculated along the lattice matching condition on each substrate (InAs and GaSb).     

Theoretical study of the electronic and magnetic properties of Co2Cr1−xVxAl

We have investigated the electronic and magnetic properties of the doped Heusler alloys Co₂Cr_1−xV_xAl(x=0, 0.25, 0.5, 0.75, 1) using first-principles density functional theory within the generalized gradient approximation (GGA) scheme. The calculated results reveal that with increasing V content the lattice parameter slightly increases; both cohesive energy and bulk modulus increase with increasing x. The magnetic moment of the Co(Cr) sites increases with V doping; the total spin moment of these compounds linearly decreases. We also have performed the electronic structure calculations for Co₂Cr_1−xV_xAl with positional disorder of Co-Y(Cr,V)-type and Al-Y(Cr,V)-type. It is found that formation of Al-Y-type disorder in Co₂Cr_1−xV_xAl alloys is more favorable than that of Co-Y-type disorder. Furthermore, we found that Co₂Cr_1−xV_xAl of the L2₁-type structure have a half-metallic character. And the stability of L2₁ structure will enhance, however, the Curie temperature decreases as the V concentration increases. The disorder between Cr(V) and Al does not significantly reduce the spin polarization of the alloys Co₂Cr_1−xV_xAl.     

Microstructural and optical properties of strain compensated InxGa1−xAs/InyAl1−yAs multiple quantum wells

Transmission electron microscopy (TEM) and photocurrent (PC) measurements were carried out to investigate the microstructural and excitonic transitions in In_0.52Ga_0.48As/In_0.55Al_0.45As multiple quantum wells (MQWs). TEM images showed that high-quality 11-period strain-compensated In_0.52Ga_0.48As/In_0.55Al_0.45As MQWs had high-quality heterointerfaces. Based on the TEM results, a possible crystal structure for the In_0.52Ga_0.48As/In_0.55Al_0.45As MQWs is presented, and their strains are compensated. The results for the PC data at 300 K for several applied electric fields showed that several excitonic transitions shifted to longer wavelengths as the applied electric field increased. These results indicate that the strain-compensated In_0.52Ga_0.48As/In_0.55Al_0.45As MQWs hold promise for electroabsorption modulator devices.     

Effect of Cu deficiency on the optical properties and electronic structure of CuIn1−xGaxSe2

Spectroscopic ellipsometry measurements of CuInSe₂ (CIS) and CuIn_1−xGa_xSe₂ (CIGS) over a range of Cu compositions reveal that there are important differences in electronic and optical properties between α-phase CIS/CIGS and Cu-poor CIS/CIGS. We find a reduction in the imaginary part of the dielectric function ?₂ in the spectral region, 1-3 eV. This reduction can be explained in terms of the Cu-3d density of states. An increase in band gap is found for Cu-poor CIS and CIGS due to the reduction in repulsive interaction between Cu-3d and Se-4p states. We also characterize the dielectric functions of polycrystalline thin-film α-phase CuIn_1−xGa_xSe₂ (x=0.18 and 0.36) to determine their optical properties and compare them with similar compositions of bulk polycrystalline CuIn_1−xGa_xSe₂. The experimental results have important implications for understanding the functioning of polycrystalline optoelectronic devices.