Theoretical investigation on structural, magnetic and electronic properties of ferromagnetic GdN under pressure

The tight-binding linear muffin tin orbital (TB-LMTO) method within the local density approximation is used to calculate structural, electronic and magnetic properties of GdN under pressure. Both nonmagnetic (NM) and magnetic calculations are performed. The structural and magnetic stabilities are determined from the total energy calculations. The magnetic to ferromagnetic (FM) transition is not calculated. Magnetically, GdN is stable in the FM state, while its ambient structure is found to be stable in the NaCl-type (B₁) structure. We predict NaCl-type to CsCl-type structure phase transition in GdN at a pressure of 30.4 GPa. In a complete spin of FM GdN the electronic band picture of one spin shows metallic, while the other spin shows its semiconducting behavior, resulting in half-metallic behavior at both ambient and high pressures. We have, therefore, calculated electronic band structures, equilibrium lattice constants, cohesive energies, bulk moduli and magnetic moments for GdN in the B₁ and B₂ phases. The magnetic moment, equilibrium lattice parameter and bulk modulus is calculated to be 6.99 μ_B, 4.935 Å and 192.13 GPa, respectively, which are in good agreement with the experimental results.     

First-principles study of electronic structure of transition metal nitride: ReN under normal and high pressure

First-principles calculation was performed using tight-binding LMTO method with local density approximation (LDA) and atomic sphere approximation (ASA) to understand the electronic properties of rhenium nitride. The equilibrium geometries, the electronic band structure, the total and partial DOS are obtained under various pressures and are analyzed in comparison with the available experimental data. The most stable structure of ReN is NiAs like structure. Our results indicate that ReN can be used as a super-hard conductor. We estimated the average electron-phonon coupling constant to be 1.65 and superconducting transition temperature (T_c) is 5.1 K. The T_c value increases with the increase in pressure.     

Second-order phase transition with coexistence of short-range and long-range ferromagnetic interactions in Ba1.7La0.3FeMoO6 compound

In this work, the magnetic properties and critical behavior around ferromagnetic–paramagnetic (FM–PM) phase transition in Ba_1.7La_0.3FeMoO₆ compound have been investigated in detail. This compound exhibits a second-order magnetic phase transition with Curie temperature T_C = 345 K. The critical exponents β, γ, and δ that are determined by using the modified Arrott plots (MAP), the Kouvel–Fisher (KF) and the critical isotherm analysis agree very well. Our results indicate a coexistence of short-range and long-range ferromagnetic (FM) interactions in Ba_1.7La_0.3FeMoO₆ compound. The existence of long-range FM interactions in this compound can be associated with the crystal structure of materials with long-range Fe/Mo ordering parameter and strength of double-exchange interaction, whereas the existence of the short-range FM interactions can be explained by magnetic inhomogeneity and FM clusters.     

Theoretical studies on the electronic structure and magnetic properties of Cu(2,5-dmpz)Cl2

First-principles calculations have been performed to study the electronic structure, the metallic and magnetic properties of Cu(2,5-dmpz)Cl₂. The calculations are based on the density functional theory (DFT) with the generalized gradient approximation (GGA) and the full-potential-linearized-augmented plane wave (FPLAPW) method. The total energy, magnetic moment, density of states (DOS) and electronic band structure are calculated. The results reveal that the compound has a stable semiconductive antiferromagnetic (AFM) ground state and a semiconductive ferromagnetic (FM) metastable state, which is in good agreement with the experimental results. Based on the spin distribution and the DOS, it is found that the spin magnetic moment is mainly from the Cu²⁺, and with relative small contribution from Cl, N atoms.     

The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

Based on the free-electron approximation,we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance(TMR) and tunnelling conductance(TC)in the double magnetic tunnel junctions(DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM,where FM,NM and I(S) represent the ferromagnetic metal,nonmagetic metal and insulator(Semiconductor),respectively,The FM,I(S)and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite.The calculated results show that,due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations,and a much higher TMR can be obtained for suitable thicknesses of FM layers.     

The electronic structure and the ferromagnetic intermolecular interactions in the crystal of a diphenyl nitroxide derivative

Based on the generalized gradient approximation, full potential linearized augmented plane-wave calculations have been performed to study the electronic band structure and the ferromagnetic (FM) interactions of the 9,9-dipropyl-9,10-dihydroacridin-10-yloxyl (DPAO) organic radical. The total and partial density of states and the atomic spin magnetic moments are calculated and discussed. It is found that the unpaired electrons in this radical are localized in a molecular orbital constituted primarily of the π* (NO) orbital, and the main contribution of the spin magnetic moment comes from the NO free radical, with little contributions from other C atoms. The origin of FM interactions is also studied in detail.     

TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算

使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现：用V，Cr和Mn掺杂时体系将出现铁磁状态，而Fe掺杂时将出现反铁磁状态，Co和Ni掺杂时，其磁性则不稳定.其中，Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中，V离子的磁矩大于理论期待值，Fe，Co和Ni离子的磁矩小于理论期待值，Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外，使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂，将有利于DMS表现为铁磁状态，并可以使体系的T_C进一步提高. 关键词： 稀磁半导体 过渡金属 掺杂 共掺杂     

The electronic structure and the ferromagnetic intermolecular interactions in the crystal of TEMPO radicals

Based on the generalized gradient approximation, full potential linearized augmented plane wave (FP-LAPW) calculations have been performed to study the electronic band structure and the intermolecular ferromagnetic (FM) interactions for the two TEMPO radicals 4-Benzylideneamino-2,2,6,6-tetramethylpiperidin-1-oxyl (1) and 4-(2-naphtylmethyleneamino)-2,2,6,6-tetramethylpiperidin-1-oxyl (2). The total and the partial density of states and the atomic spin magnetic moments are calculated and discussed. The calculation revealed that the two TEMPO radicals have the intermolecular FM interactions, and the spontaneous magnetic moment is 1.0 μ_B per molecule of each crystal, which is in good agreement with the experimental value. It is found that the unpaired electrons in these compounds are localized in a molecular orbital constituted primarily of π* (NO) orbital, and the main contribution of the spin magnetic moment comes from the NO-free radical. The origin of FM is also studied in detail.     

The electronic and magnetic properties of （Mn,C）-codoped ZnO diluted magnetic semiconductor

The electronic and magnetic properties of (Mn,C)-codoped ZnO are studied in the Perdew-Burke-Ernzerhof form of generalized gradient approximation of the density functional theory. By investigating five geometrical configurations, we find that Mn doped ZnO exhibits anti-ferromagnetic or spin-glass behaviour, and there are no carriers to mediate the long range ferromagnetic (FM) interaction without acceptor co-doping. We observe that the FM interaction for (Mn,C)-codoped ZnO is due to the hybridization between C 2p and Mn 3d states, which is strong enough to lead to hole-mediated ferromagnetism at room temperature. Meanwhile, we demonstrate that ZnO co-doped with Mn and C has a stable FM ground state and show that the (Mn,C)-codoped ZnO is FM semiconductor with super-high Curie temperature (T C = 5475 K). These results are conducive to the design of dilute magnetic semiconductors with codopants for spintronics applications.     

Magnetic moment collapse induced by high-pressure in semi-borides TM2B (TM = Fe,Co). A first-principles study

The high-pressure effects are investigated on the structure, magnetic phase transition, and anisotropic elastic properties of the 3d transition-metal semi-borides TM₂B (TM?=?Fe, Co) by using the generalized gradient approximation (GGA) within the framework of density functional theory (DFT). At equilibrium spin polarization, calculations show that the Fe₂B and Co₂B compounds are ferromagnetic (FM). In the applied pressure range from 0 to 90?GPa, the magnetic moment of Fe₂B and Co₂B slowly decreases and then abruptly drops to zero at 85?GPa, indicating a state transition from the ferromagnetic to the nonmagnetic (NM) state (a first-order quantum phase transition). The collapse of the magnetic moment is accompanied by an abrupt change in the lattice parameters and elastic constants. In addition to this phenomenon, the density of states (DOS), and anisotropic elastic properties are presented at 0?GPa and at the critical transition pressure. Furthermore, I have plotted the three-dimensional (3D) surfaces and planar contours for the Young and bulk moduli of the compounds at several crystallographic planes, ((100) and (001)) to reveal their elastic anisotropy. On the basis of anisotropic elastic properties, I have predicted the easy and hard axes of magnetization for the TM₂B compounds.     

高温高压下过渡金属Ru的结构相变

采用基于密度泛函理论的第一性原理和准简谐晶格动力学方法对Ru的六角密排 (hcp)、面心立方 (fcc)、体心四方 (bct) 和体心立方 (bcc) 结构的磁性、晶格结构稳定性和高温高压下的相变进行了系统的研究. 计算获得了各相结构的磁性基态及其稳定性范围, 结果表明: 零温下在计算的压力范围内, NM-hcp 结构是Ru最稳定的结构, 压力的单独作用下并没有相变的发生; NM-fcc结构是Ru的亚稳定结构, 而NM-bcc和FM-bct结构在动力学上并不稳定. 高温高压下Ru将发生从NM-hcp到NM-fcc结构的相变, 并给出了Ru的温度压力相图. 关键词： 相变 晶格稳定性 磁性 第一性原理     

Structural, electronic, and magnetic properties of CrN under high pressure

The structural,electronic and magnetic properties of CrN under high pressure are investigated by first-principles calculations.The antiferromagnetic orthorhombic structure is identified to be the preferred ground state structure.It possesses a bulk modulus of 252.8 GPa and the nonzero magnetic moment of 2.33 μ B per Cr ion,which agree well with the experimental results.CrN undergoes structural and magnetic transitions from an antiferromagnetic rocksalt structure to a non-magnetic Pnma phase at 132 GPa.Under compression,the magnetic moment of the Cr ion reduces rapidly near the equilibrium and phase transition point,and the distribution of the density of states is broadened,but the form of overlap between the orbitals of Cr d and N p remains unchanged.The broadening of the band induces spin flipping,which consequently results in the smaller magnetic moment of the Cr ion.     

Competition between ferromagnetic and anti-ferromagnetic couplings in Co doped ZnO with vacancies and Ga co-dopants

Spin-polarized first-principles electronic structure and total energy calculations have been performed to better understand the magnetic properties of Co doped ZnO (ZnO:Co) with vacancies and Ga co-dopants. The paramagnetic state of ZnO:Co, in which Co ions lose their magnetic moments, has been found to be unstable. The total energy results show that acceptor-like Zn vacancies and donor-like Ga co-dopants render the anti-ferromagnetic (AFM) and ferromagnetic (FM) states to be more favorable, respectively. With O vacancies, ZnO:Co has been found to be in the weak FM state. These magnetic properties can be understood by the calculated O- and Zn-vacancies and Ga co-dopant induced changes of the electronic structure, which suggest that AFM and FM Co-Co couplings are mediated by O 2p-Co majority (↑)-spin 3d hybridized states in the valence band of ZnO and O-vacancy-derived p states or Ga sp states in the ZnO band gap, respectively. For ZnO:Co with Zn vacancies (Ga co-dopants) the AFM (FM) coupling outweighs the FM (AFM) coupling and results in the AFM (FM) state, while for ZnO:Co with O vacancies, both the FM and AFM couplings are enhanced by similar degrees and result in the weak FM state. This study reveals a competition between FM and AFM couplings in ZnO:Co with vacancies and Ga co-dopants, the detailed balancing between which determines the magnetic properties of these materials.     

First-principles investigation of structural,elastic, electronic and magnetic properties of Be0.75Co0.25Y (YS,Se and Te) compounds

We have theoretically investigated the structural, elastic, electronic and magnetic properties of Be_0.75Co_0.25Y (YS, Se and Te) alloys, in their zinc-blend phase. This study is carried out by using the full-potential augmented plane wave plus local orbitals method within the density functional theory. Foe computing the exchange-correlation potential, the Wu and Cohen generalized gradient approximation is employed to calculate structural and elastic properties whereas the modified Becke and Johnson potential local density approximation is utilized to examine electronic and magnetic properties. By minimizing the total energy in paramagnetic (PM) and ferromagnetic (FM) phases, it is found the studied compounds are stable in FM structure. The mechanical behavior of the studied compounds is reported with the calculation of shear modulus, Young's modulus, and Poisson's ratio provides. Such mechanical aspects might be useful for the experimentalists to study the mechanical properties upon alloying BeY compounds with Co. We also compute electronic structures, density of states (total and partial), pd-exchange splitting and magnetic moments. Moreover, bond nature is studied by estimating the spin polarized charge densities of Be_0.75Co_0.25Y (YS, Se and Te).     

Structure and magnetic properties of CrN thin films on La0.67Sr0.33MnO3

High crystalline quality CrN thin films have been grown on La_0.67Sr_0.33MnO₃ (LSMO) templates by molecular beam epitaxy. The structure and magnetic properties of CrN/LSMO heterojunctions are investigated combining with the experiments and the first-principles simulation. The Nėel temperature of the CrN/LSMO samples is found to be 281 K and the saturation magnetization of CrN/LSMO increases compared to that of LSMO templates. The magnetic property of CrN/LSMO heterostructures mainly comes from Cr atoms of (001) CrN and Mn atoms of (001) LSMO. The (001) LSMO induces and couples the spin of the CrN sublattice at CrN/LSMO interface.     

Tunable electronic structure and magnetic coupling in strained two-dimensional semiconductor MnPSe<Subscript>3</Subscript>

The electronic structures and magnetic properties of strained monolayer MnPSe₃ are investigated systematically via first-principles calculations. It is found that the magnetic ground state of monolayer MnPSe₃ can be significantly affected by biaxial strain engineering, while the semiconducting characteristics are well-preserved. Owing to the sensitivity of the magnetic coupling towards structural deformation, a biaxial tensile strain of approximately 13% can lead to an antiferromagnetic (AFM)- ferromagnetic (FM) transition. The strain-dependent magnetic stability is mainly attributed to the competition of the direct AFM interaction and indirect FM superexchange interaction between the two nearest-neighbor Mn atoms. In addition, we find that FM MnPSe₃ is an intrinsic half semiconductor with large spin exchange splitting in the conduction bands, which is crucial for the spin-polarized carrier injection and detection. The sensitive interdependence among the external stimuli, electronic structure, and magnetic coupling makes monolayer MnPSe₃ a promising candidate for spintronics.     

Large reversible magnetocaloric effect induced by metamagnetic transition in antiferromagnetic HoNiGa compound

The magnetic properties and magnetocaloric effects(MCE) of Ho Ni Ga compound are investigated systematically.The Ho Ni Ga exhibits a weak antiferromagnetic(AFM) ground state below the Neel temperature TNof 10 K, and the AFM ordering could be converted into ferromagnetic(FM) ordering by external magnetic field. Moreover, the field-induced FM phase exhibits a high saturation magnetic moment and a large change of magnetization around the transition temperature,which then result in a large MCE. A large-?S_M of 22.0 J/kg K and a high RC value of 279 J/kg without magnetic hysteresis are obtained for a magnetic field change of 5 T, which are comparable to or even larger than those of some other magnetic refrigerant materials in the same temperature range. Besides, the μ_0H~(2/3)dependence of |?S_M~(pk)| well follows the linear fitting according to the mean-field approximation, suggesting the nature of second-order FM–PM magnetic transition under high magnetic fields. The large reversible MCE induced by metamagnetic transition suggests that Ho Ni Ga compound could be a promising material for magnetic refrigeration in low temperature range.     

Electronic and magnetic properties of pristine and hydrogenated borophene nanoribbons

The groundbreaking works in graphene and graphene nanoribbons (GNRs) over the past decade, and the very recent discovery of borophene naturally draw attention to the yet-to-be-explored borophene nanoribbons (BNRs). We herein report a density functional theory (DFT) study of the electronic and magnetic properties of BNRs. The foci are the impact of orientation (denoted as BxNRs and ByNRs with their respective periodic orientations along x- and y-axis), ribbon width (N_x, N_y=4–15), and hydrogenation effects on the geometric, electronic and magnetic properties of BNRs. We found that the anisotropic quasi-planar geometric structure of BNR and the edge states largely govern its electronic and magnetic properties. In particular, pristine ByNRs adopt a magnetic ground state, either anti-ferromagnetic (AFM) or ferromagnetic (FM) depending on the ribbon width, while pristine BxNRs are non-magnetic (NM). Upon hydrogenation, all BNRs exhibit NM. Interestingly, both pristine and hydrogenated ByNRs undergo a metal-semiconductor-metal transition at N_y=7, while all BxNRs remain metallic.     

Half-metallic ferromagnetism in cubic perovskite type NdInO3

ABSTRACT

Based on the full-potential linearised augmented plane wave plus local orbitals (FP-L/APW?+?lo) method within the density functional theory (DFT), the structural, electronic, and magnetic calculations of the cubic oxide perovskite NdInO₃ compound have been done under the generalised gradient approximation (GGA). The exchange and correlation (XC) potential is defined as GGA framework in the analyses of structural properties, while both GGA and GGA?+?U (U is the Hubbard correlation term) approximations are taken to treat the electronic and magnetic properties. It is found that ferromagnetic (FM) configuration is reported as the most stable ground state of the cubic NdInO₃ material; however, the equilibrium lattice parameters such as lattice constant (a₀ ), bulk modulus (B₀ ), its first-pressure derivative (B’), and the minimum of total energy (E₀ ) are given in paramagnetic (PM), ferromagnetic (FM), and anti-ferromagnetic (AFM) states. The spin-polarized electronic structure calculations (band structure and density of states) of the cubic oxide perovskite NdInO₃ compound verify the half-metallic feature due to the spin-up case which has the metallic nature, whereas the spin-down case presents the semiconducting character. Moreover, the magnetic properties show the integer value of the total magnetic moment for the studied compound (3μ_B ), where it is manly contributed by Nd atoms with apparition of weak local magnetic moments in non magnetic In and O sites.