Dielectric relaxation and anisotropy of nematic mixture E-24

The dielectric anisotropy and dispersion of the real and imaginary part of permittivity of commercially important nematic mixture E-24 were investigated in the frequency range from 1 kHz to 10 MHz and temperature range 287-328 K. The measurements in nematic phase indicate Debye-type dispersion with relaxation time of 1.07 μs at 313 K and activation energy 41.01 kcal/mol. The results have been explained by assuming the molecular rotation about the long molecular axis under a hindering nematic potential. The dielectric anisotropy Δε is positive and the mean dielectric permittivity falls with rising temperature. Δε is also used to determine the order parameter for varying temperature.     

Dielectric properties and relaxation behavior of [TMA]2Zn0.5Cu0.5Cl4 compound

The [TMA]₂Zn_0.5Cu_0.5Cl₄ hybrid material was prepared and its dielectric spectra were measured in the 10⁻¹ Hz-10⁶ Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σ_dc+Aωⁿ. The temperature dependent of the dc conductivity (σ_dc) was well described by the Arrhenius equation: σ_dcT=σ_o×exp(−E_a/kT).     

Study of (Bi2O3)(BaxMo1−xO3) polycrystalline ceramic as relaxor ferroelectric

Solid solutions of bismuth layered (Bi₂O₃)(Ba_xMo_1−xO₃) (0.2≤x≤0.8, x is in step of 0.2) ceramics were prepared by conventional solid-state reaction of the constitutive oxides at optimized temperatures with a view to study its electrical properties. Powder X-ray diffraction has been employed for physical characterization and an average grain size of ∼16 to 22 nm was obtained. XRD study reveals the single phase structure of the samples. Dielectric properties such as dielectric constant (ε′), dielectric loss (tanδ) and ac electrical conductivity (σ_ac) of the prepared ceramics sintered at various temperatures in the frequency range 10¹–10⁷ Hz have been studied. A strong dispersion observed in the dielectric properties shows the relaxor type behavior of the ceramic. The presence of maxima in the dielectric permittivity spectra indicates the ferroelectric behavior of the samples. Impedance plots (Cole–Cole plots) at different frequencies and temperatures were used to analyze the electric behavior. The value of grain resistance increases with the increase in Ba ion concentration. The conductivity mechanism shows a frequency dependence, which can be ascribed to the space charge mainly due to the oxygen vacancies. The relaxation observed for the M″ (ω) or Z″ (ω) curves is correlated to both localized and long range conduction. A single ‘master curve’ for the normalized plots of all the modulus isotherms observed for a given composition indicates that the conductivity relaxation is temperature independent.     

Minimizing of power loss in Li-Cd ferrite by nickel substitution for power applications

The effect of Ni substitution on the microstructure, dielectric, impedance, magnetic and power loss properties has been investigated on a series of Li_0.35-0.5xCd_0.3Ni_xFe_2.35-0.5xO₄ (0.00≤x≤0.08) ferrite prepared by citrate precursor method. Dielectric and impedance measurements have been determined in the frequency range 100 Hz-10 MHz. An enhancement in permittivity was observed with Ni concentration and exhibits the maximum value of ∼7×10³ for x=0.02 sample. The impedance spectroscopy technique has been used to study the effect of grain and grain boundary on the electrical properties of all the samples. Power loss measurements have been carried out in the frequency range 50 kHz-5 MHz at induction condition of B=10 mT. Power loss has been found to be quite low, less than 100 kW/m³ up to 500 kHz, with the substitution of Ni in Li_0.35-0.5xCd_0.3Ni_xFe_2.35-0.5xO₄ ferrite, which is useful for technological aspects.     

Magnetic and dielectric studies of nanocrystalline zinc substituted Cu-Mn ferrites

Ferrites with the general formula Cu_1−xZn_xFeMnO₄ (where 0≤x≤1) were prepared through a citrate gel auto-combustion route. Structural characterizations carried out by X-ray diffraction reveal that the lattice constant increases with increase in zinc content. Transmission electron microscopic measurements confirm the nanoscale nature of the particles. Room temperature saturation magnetization was measured as a function of zinc concentration. The saturation magnetization increases up to x=0.25 and then decreases as zinc concentration increases. Dielectric permittivity, dielectric loss tangent, ac conductivity and complex dielectric impedance were studied in the frequency range 20 Hz-1 MHz. The results indicated a usual dielectric dispersion due to the Maxwell-Wagner type of interfacial polarization. Dielectric loss showed similar behavior as dielectric permittivity. The ac conductivity increased linearly with frequency. Complex impedance spectroscopic studies confirmed that conduction in the samples is via grain boundaries. In general, substitution of zinc plays an important role in changing the structural, electrical and magnetic properties of these ferrites.     

Structural,optical and dielectric properties of Ni substituted NdFeO3

Present study reports the structural, optical and dielectric properties of Ni substituted NdFe_1−xNi_xO₃ (0 ≤ x ≤ 0.5) compounds prepared through the ceramic method. X-ray diffraction (XRD) confirmed an orthorhombic crystal structure of all the samples. Both unit cell volume and grain size were found to decrease with an increase in Ni concentration. Morphological study by Scanning electron microscope (SEM) shows less porosity with Ni substitution in present system. From UV–vis spectroscopy, the optical band gap was found to increase with Ni doping. This observed behavior was explained on the basis of reduction in crystallite size, unit cell volume and its impact on the crystal field potential of the system after Ni substitution. The dielectric properties (?′ and tanδ) as a function of frequency or temperature, and the ac electrical conductivity (σ_ac) as a function of frequency have been studied. Hopping of charge carriers between Fe²⁺ → Fe³⁺ ions and Ni²⁺ → Ni³⁺ ions are held responsible for both electrical and dielectric dispersion in the system. Wide optical band gap and a very high dielectric constant of these materials promote them to be a suitable candidate for memory based devices in electronic industry.     

Dielectric relaxation in single crystal NH4H2PO4 in the high-temperature regime

The dispersion curves of the dielectric response in single crystal NH₄H₂PO₄ were obtained in the radio frequency range and below the high-temperature transition at T_p−160 °C. The results reveal dielectric relaxation at low frequency, which is about 10⁵ Hz at 70 °C, and it shifts to higher frequencies (∼3×10⁶ Hz) as the temperature increases. The relaxation frequency was determined from the peak obtained in the imaginary part of the permittivity as well as from the derivative of the real part of the permittivity. The activation energy E_a=0.55 eV, obtained from the relaxation frequency is very close to that derived from the dc conductivity. We suggest that this dielectric relaxation could be due to the proton jump and phosphate reorientation that cause distortion and change the local lattice polarizability inducing dipoles like      

Dielectric characteristics of cation deficient TbMnO3

Cation deficient polycrystalline Tb_1−xMnO₃ (x= 0.05, 0.10) and TbMn_1−yO₃ (y =0.05, 0.10) samples were fabricated by conventional solid-state reaction. The complex dielectric properties of the cation deficient TbMnO₃ were investigated as the function of temperature (77 K≤T≤350 K) and frequency (100 Hz≤ f≤ 200 kHz) separately. Compared to the parent TbMnO₃, the cation deficient TbMnO₃ samples exhibit not only high dielectric constant but also low dissipation factor. Nyquist plots of complex impedance show that the dielectric properties originate from two main relaxation sources, i.e. bulk contributions and grain boundary effects.     

Sintering temperature dependence of room temperature magnetic and dielectric properties of Co0.5Zn0.5Fe2O4 prepared using mechanically alloyed nanoparticles

Co_0.5Zn_0.5Fe₂O₄ nanoparticles were prepared using mechanical alloying (MA) and sintering. The crystallite size, coercivity, retentivity and saturation magnetization were also measured. The frequency dependence of dielectric and the magnetic parameters, namely, real permittivity ε′, loss tanget tan δ, real permeability μ′ and loss factor μ″ were measured at room temperature for samples sintered from 600 to 1000 °C, in the frequency range 10 MHz to 1.0 GHz. The results show that the crystallite size of the resulting products ranges between 16 and 67 nm for as-milled sample and the sample sintered at 1000 °C, respectively. The sample sintered at 1000 °C, measured at room temperature exhibited a saturation magnetization of 37 emu g⁻¹. The values of permittivity remain constant within the measured frequency, but vary with sintering temperature. The permeability values, on the other hand however vary with both the sintering temperature and the frequency, thus, the absolute value of the permeability decreased after the natural resonance frequency.     

BiFeO3 ceramic matrix with Bi2O3 or PbO added: Mössbauer, Raman and dielectric spectroscopy studies

In this paper Mössbauer, Raman and dielectric spectroscopy studies of BiFeO₃ (BFO) ceramic matrix with 3 or 10 wt% of Bi₂O₃ or PbO added, obtained through a new procedure based on the solid-state method, are presented. Mössbauer spectroscopy shows the presence of a single magnetically ordered phase with a hyperfine magnetic field of 50 T. Raman spectra of BFO over the frequency range of 100-900 cm⁻¹ have been investigated, at room temperature, under the excitation of 632.8 nm wavelength in order to evaluate the effect of additives on the structure of the ceramic matrix. Detailed studies of the dielectric properties of BiFeO₃ ceramic matrix like capacitance (C), dielectric permittivity (ε) and dielectric loss (tan δ), were investigated in a wide frequency range (1 Hz-1 MHz), and in a temperature range (303-373 K). The complex impedance spectroscopy (CIS) technique, showed that these properties are strongly dependent on frequency, temperature and on the added level of impurity. The temperature coefficient of capacitance (TCC) of the samples was also evaluated. The study of the imaginary impedance (−Z″) and imaginary electric modulus (M″) as functions of frequency and temperature leads to the measurement of the activation energy (E_ac), which is directly linked to the relaxation process associated with the interfacial polarization effect in these samples.     

Effect of nickel doping on structural, optical and electrical properties of TiO2 nanoparticles by sol-gel method

Nickel-doped anatase TiO₂ nanoparticles have been prepared by sol-gel method. The X-ray powder diffraction study reveals that all the prepared samples have pure anatase phase tetragonal system. The average crystallite size of the prepared sample is 14 nm, when found through transmission electron microscope. A strong frequency dependence of both dielectric constant (?′) and dielectric loss (tan δ) were observed for various dopant levels at room temperature in the frequency range of 42 Hz to 5 MHz. At low frequency, the piling up of mobile charge carriers at the grain boundary produces interfacial polarization giving rise to high dielectric constant. The asymmetric shape of frequency dependence of the dielectric loss for the primary relaxation process is observed for each concentration. From the ac conductivity studies, the reduction in conductivity may arise due to the decreasing particle with the increase in Ni-dopant level.     

Oxygen-defects-related dielectric response in CaCu3Ti4O12 ceramics

A 10 mm thickness columned CaCu₃Ti₄O₁₂ ceramic was fabricated by the conventional solid-state reaction method and the dielectric properties of different parts in ceramic had been investigated. For the sample close to the surface, only one Debye-type relaxation around 10⁷ Hz was observed at room temperature. However, for the sample close to the core, another relaxation peak was observed at about 10⁴ Hz. The results were explained in terms of the equivalent circuit model by showing in the impedance spectroscopy. Moreover, it was introduced that the low-frequency dielectric relaxation is associated with the electrode-sample contact effect based on varying sample thickness and an annealing treatment in the nitrogen atmospheres.     

AC conductivity and dielectric relaxation in Ba(Sm1/2Nb1/2)O3 ceramic

The complex perovskite oxide a barium samarium niobate (BSN) synthesized by solid-state reaction technique has single phase with cubic structure. The scanning electron micrograph of the sample shows the average grain size of BSN∼1.22 μm. The field dependence of dielectric response and loss tangent were measured in the temperature range from 323 to 463 K and in the frequency range from 50 Hz to 1 MHz. The complex plane impedance plots show the grain boundary contribution for higher value of dielectric constant in the low frequency region. An analysis of the dielectric constant (ε′) and loss tangent (tan δ) with frequency was performed assuming a distribution of relaxation times as confirmed by the scaling behaviour of electric modulus spectra. The low frequency dielectric dispersion corresponds to DC conductivity. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with an activation energy of 0.71 eV. The frequency dependence of electrical data is also analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary part of electric modulus M″ and dielectric loss spectra suggest that the relaxation describes the same mechanism at various temperatures in BSN. All the observations indicate the polydispersive relaxation in BSN.     

Dielectric relaxation study of poly(ethylene glycols) using TDR technique

Temperature dependent dielectric relaxation and thermodynamic properties of polyethylene glycols HO[CH₂CH₂O)_nH with number average molecular weight 200 (n = 4), 300 (n = 7), 400 (n = 9) and 600 (n = 14) g mol^− 1 have been studied using Time Domain Reflectometry (TDR) in the frequency range 10 MHz to 20 GHz. The frequency dependence of the complex dielectric permittivity is analyzed by the Havriliak-Negami expression. The static permittivity ε₀, high frequency limiting static permittivity ε_∞, average relaxation time τ₀ and thermodynamic energy parameters such as free energy, enthalpy of activation and entropy of activation have been determined. The average free energy of activation ΔF_τ for PEG molecules was found to be in the range 4-5 kcal mol^− 1. The values of entropy ΔS_τ for PEG-200, PEG-400 and PEG-600 molecules were found to be positive while entropy ΔS_τ for PEG-300 molecules was found negative, which confirms that the configuration of PEG-300 involved in the dipolar orientation has an activated state, which is more ordered than the normal state compared to PEG-200, PEG-400 and PEG-600 molecules.     

Electrical conduction and dielectric properties of vanadium phosphate glasses doped with lithium

AC conductivity and dielectric studies on vanadium phosphate glasses doped with lithium have been carried out in the frequency range 0.2-100 kHz and temperature range 290-493 K. The frequency dependence of the conductivity at higher frequencies in glasses obeys a power relationship, σ_ac=Aω^s. The obtained values of the power s lie in the range 0.5≤s≤1 for both undoped and doped with low lithium content which confirms the electron hopping between V⁴⁺ and V⁵⁺ ions. For doped glasses with high lithium content, the values of s≤0.5 which confirm the domination of ionic conductivity. The study of frequency dependence of both dielectric constant and dielectric loss showed a decrease with increasing frequency while they increase with increasing temperature. The results have been explained on the basis of frequency assistance of electron hopping besides the ionic polarization of the glasses. The bulk conductivity increases with increasing temperature whereas decreases with increasing lithium content which means a reduction of the V⁵⁺.     

Electrical conductivity and complex electric modulus of titanium doped nickel-zinc ferrites

The samples Ni_1+x−yZn_yTi_x Fe_2−2xO₄; y=0.1, 0.0≤x≤0.5 were prepared in a single-phase spinel structure as indicated from X-ray analysis. Electrical conductivity and dielectric measurements at different temperatures from 300 K to 600 K in the frequency range from 42 Hz to 5 MHz have been analyzed. The relation of conductivity with temperature revealed a semiconductor to semimetallic behavior as Ti⁴⁺ concentration increases. The conduction mechanism depends mainly on the valence exchange between the different metal ions in the same site or in different sites. The dielectric constant as a function of temperature and frequency showed that there is a strong dependence on the compositional parameter x. The electrical modulus has been employed to study the relaxation dynamics of charge carriers. The result indicates the presence of correlation between motions of mobile ion charges. The activation energies extracted from M′(ω) and M″(ω) peaks are found to follow the Arrhenius law. The electrical conductance of the samples found to be dependent on the temperature and frequency.     

Dielectric relaxation study of dipropylsulfoxide/water mixtures

The complex dielectric spectra of dipropylsulfoxide (DPSO)/water mixtures in the whole concentration range have been measured as a function of frequency between 100 MHz and 20 GHz at four temperatures between 298.15 K and 328.15 K. The dielectric parameters, static dielectric constant (ε_s), relaxation time (τ) and relaxation strength (Δε) have been obtained by the least squares fit method. The relaxation in these mixtures can be described by two Debye functions, whereas for pure DPSO Cole-Davidson type is valid. The relaxation times of the mixtures show a maximum at about x(DPSO) ≈ 0.3. In the concentration range where a maximum appears, the interaction of DPSO with water is presumably the result of hydrogen bonding between water and the sulfonyl group of the sulfoxide molecule. The concentration and temperature dependent excess dielectric constant and effective Kirkwood correlation factor of the binary mixtures have been determined. The excess permittivity is found to be negative for all concentrations.     

Dielectric and AC ionic conductivity investigations in K3H(SeO4)2 single crystal

Optical observation under the polarizing microscope and DSC measurements on K₃H(SeO₄)₂ single crystal have been carried out in the temperature range 25-200 °C. It reveals a high-temperature structural phase transition at around 110 °C. The crystal system transformed from monoclinic to trigonal. Electrical impedance measurements of K₃H(SeO₄)₂ were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The temperature dependence of electrical conductivity indicates that the sample crystal became a fast ionic conductor in the high-temperature phase. The frequency dependence of conductivity follows the Jonscher's universal dynamic law with the relation σ(ω)=σ(0)+Aωⁿ, where ω is the frequency of the AC field, and n is the exponent. The obtained n values decrease from 1.2 to 0.1 from the room temperature phase to fast ionic phase. The high ionic conductivity in the high-temperature phase is explained by the dynamical disordering of protons between the neighboring SeO₄ groups, which provide more vacant sites in the crystal.     

Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

The complex dielectric and AC conductivity response of BaBi₂Nb₂O₉ relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the ‘universal relaxation law’. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law σ(ω)=σ₀+Aωⁿ. The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of n followed the Vogel-Fulcher relation with activation energy of about 0.14 eV.     

Dielectric relaxation spectroscopy of phlogopite mica

An in-depth investigation of the dielectric characteristics of annealed phlogopite mica has been conducted in the frequency range 0.1 Hz–10 MHz and over the temperature range 653–873 K through the framework of dielectric permittivity, electric modulus and conductivity formalisms. These formalisms show qualitative similarities in relaxation processes. The frequency dependence of the M″ and dc conductivity is found to obey an Arrhenius law and the activation energy of the phlogopite mica calculated both from dc conductivity and the modulus spectrum is similar, indicating that same type of charge carriers are involved in the relaxation phenomena. The electric modulus and conductivity data have been fitted with the Havriliak–Negami function. Scaling of M′, M″, ac conductivity has also been performed in order to obtain insight into the relaxation mechanisms. The scaling behaviour indicates that the relaxation describes the same mechanism at different temperatures. The relaxation mechanism was also examined using the Cole–Cole approach. The study elaborates that the investigation regarding the temperature and frequency dependence of dielectric relaxation in the phlogopite mica will be helpful for various cutting edge applications of this material in electrical engineering.