Intersubband absorption in modulation doped p-type Si1-xGex quantum wells: theory and experiment

A study of intersubband infrared absorption in modulation doped p-type Si/SiGe quantum wells is presented for SiGe wells with thicknesses between 22 Å and 64 Å and Ge contents in the range from 23% to 58%. The peak positions of the absorption lines are observed between 500 cm^-1 and 2200 cm^-1. Depending on the barrier height (i.e., on the Ge content of the wells), the heavy-hole states excited by the infrared radiation are either localized in the wells or strongly mixed with barrier-bound states and therefore delocalized. The shape of the absorption line correspondingly changes from a narrow Lorentz line to a rather broad absorption band. Using the structural parameters determined by high-resolution triple-axis x-ray diffraction, the results of a self-consistent Luttinger-Kohn type envelope function approach with the explicit inclusion of the strain in the quantum wells are in excellent agreement with the measured spectra.     

Intersubband absorption in strained AlxGa1−xN/GaN quantum wells with InyGa1−yN nanogroove layers

The intersubband absorption in a four-energy-level system consisting of a strained Al_xGa_1?xN/GaN quantum well with an In_yGa_1?yN nanogroove layer is calculated by considering the strain modification on the material parameters and polarization effect. It is found that the In_yGa_1?yN nanogroove layer in the middle of quantum well can enhance the confinement of electrons and their energy levels which consequently affect the intersubband absorption. With increasing the In composition and the groove thickness or applying a moderate compressive stress, an inflexion of energy levels appears when the lowest energy potentials of the left well and the groove are equivalent. The intersubband absorption spectrum exhibits multiple peaks contributed by different transitions. The position and height of absorption peaks are sensitive to the structural parameters (i.e., In composition and nanogroove thickness) and the strain induced by the groove layer.     

Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

We have studied the cyclotron-resonance absorption and photoluminescence properties of the modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells.It is shown that only the doped sample shows electron cyclotron-resonance absorption.Also,the undoped sample shows two distinctive peaks in the spatially indirect photoluminescence spectra,and the doped one shows only one peak.The results reveal that the high concentration electrons accumulated in ZnSe quantum well layers from n-doped layers can tunnel through BeTe barrier from one well layer to the other.The electron concentration difference between these two well layers originating from the tunneling results in a new additional electric field,and can cancel out a built-in electric field as observed in the undoped structures.     

有机多层量子阱结构的光致发光特性的研究

采用多源高真空有机分子束沉积系统(OMBDs),将两种有机小分子材料PBD和Alq₃以交替生长的方式,制备了不同厚度的PBD/Alq₃有机多层量子阱结构(OMQWs), 并利用电化学循环伏安法和光吸收分别测定了PBD和Alq₃的最低空分子轨道(LUMO)和最高占据分子轨道(HOMO)。该结构类似于无机半导体中的Ⅰ型量子阱结构,PBD层作为势垒层,Alq3层作为势阱层和发光层,并进行了小角X射线衍射(XRD)的测量。利用荧光光谱研究了OMQWs光致发光(PL)特性,得到随着阱层厚度的降低,光致发光的峰位将蓝移;同时随垒层厚度的减小,PBD的发光峰逐渐消失。利用量子阱结构可以使PBD的能量有效的传递给Alq₃,从而增强Alq₃的发光。     

Linear and nonlinear intersubband optical absorption in symmetric double semi-parabolic quantum wells

The linear and the nonlinear intersubband optical absorption in the symmetric double semi-parabolic quantum wells are investigated for typical GaAs/AlxGa1−xAs. Energy eigenvalues and eigenfunctions of an electron confined in finite potential double quantum wells are calculated by numerical methods from Schrödinger equation. Optical properties are obtained using the compact density matrix approach. In this work, the effects of the barrier width, the well width and the incident optical intensity on the optical properties of the symmetric double semi-parabolic quantum wells are investigated. Our results show that not only optical incident intensity but also structure parameters such as the barrier and the well width really affect the optical characteristics of these structures.     

Linear and nonlinear intersubband optical absorption coefficients and refractive index changes in symmetric double semi-V-shaped quantum wells

In this study, the changes in the refractive index and intersubband optical absorption coefficients in symmetric double semi-V-shaped quantum wells are investigated theoretically. The energy levels and the envelope wave functions of an electron confined in finite potential double semi-V-shaped quantum wells are calculated within the effective-mass approximation framework. The analytical expressions of the refractive index and intersubband optical absorption coefficients are obtained using the compact density matrix approach. The effects of the incident optical intensity and structure parameters, such as the barrier width, confinement potential and the well width, on the optical properties of the double semi-V-shaped quantum wells are investigated. The numerical results show that both the incident optical intensity and structure paremeters have a great effect on the optical characteristics of these structures.     

Absorption measurements at high pressure (0–10kbar) on strained superlattices

Absorption data on strained GaAs_1?xP_x-GaAs superlattices (SL, 128-period, barrier size L_B≈75 Å, quantum-well size L_z≈75 Å, alloy composition x≈0.25) are presented in the range 0–10 kbars. The absorption curves obtained show no exciton show no exciton peaks such as seen in lattice- matched Al_xGa_1?xAs-GaAs SL's, and the pressure coefficient decreases from 11.5 meV/kbar to ≈ 10.5 meV/kbar in the wells and ≈6.5 meV/kbar at energies approaching and above the barrier energies. This behavior is attributed to the fluctuations in strain caused by the alloy disorder, and clustering, of the barriers.     

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

In this work we investigate electron–impurity binding energy in GaN/HfO₂ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron–impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron–impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO₂ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.     

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

The structural and optical properties of InGaN/GaN multiple quantum wells(MQWs) with different barrier thicknesses are studied by means of high resolution X-ray diffraction(HRXRD), a cross-sectional transmission electron microscope(TEM), and temperature-dependent photoluminescence(PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodicity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization potentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence,and the corresponding activation energy(or the localization potential) increases with the increase of the barrier thickness.The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers,i.e., clusters with lower In contents aggregate into clusters with higher In contents.     

Brownian motion in potential wells: i) Fine structure in the far infra-red absorption of dipolar liquids

The theory of Brownian motion in cosine potential wells is used to produce fine structures in the far infra-red power absorption coefficient of dipolar liquids in the low friction limit for finite barrier heights. The broad far infra-red absorption profile evolves into many sharp, resonance peaks as the friction coefficient, β→o. The theory lends qualitative support to the recent experimental observation of fine structure in the far infra-red power absorption of acetonitrile - a highly structured liquid whose viscosity is, nonetheless, low in comparison with other molecular liquids at room temperature.     

Hybrid stable-chaotic states in coupled quantum well stadia

We use tunnel current spectroscopy to investigate the quantum states of two GaAs quantum wells coupled by a low (100 meV) (AlGa)As tunnel barrier. A high tilted magnetic field is used to generate strongly chaotic electron motion in the two wells which act as coupled chaotic ‘stadia'. The effect of the tunnel barrier on the dynamics of the system depends on the magnitude of the applied bias voltage V. For V375 mV, the central potential barrier acts as a perturbation which modifies the trajectories of selected periodic orbits in the quantum well. Scattering off the central barrier also generates new periodic orbits involving multiple collisions on all three barriers. These orbits ‘scar' distinct sets of eigenstates which generate periodic resonant peaks in the current–voltage characteristics of the device. When the device is biased such that the injected electrons just surmount the central barrier, our calculations reveal novel hybrid scarred states with both stable and chaotic characteristics.     

Performance of T-shape barriers with top surface covered with absorptive quadratic residue diffusers

A previous paper [Applied Acoustics 66 (2005) 709-730] has shown that adding a quadratic residue diffuser (QRD) to the top of a T-shape barrier can provide better barrier performance than an equivalent purely absorptive barrier. In here, we extend the study to look at the performance when a QRD is made absorptive. This paper presents an investigation on the acoustic performance of a few welled-diffusers with different absorption ability on top of a T-shape noise barrier. The absorption properties of the diffusers are modified with different sequences, by filling the wells with fiberglass, by covering the well entrance with wire meshes, and by putting perforated sheet either on the top surface or inside the wells. A 2D Boundary Element Method (BEM) is used to calculate the barrier insertion loss. The numerical and experimental results on diffuser barriers with rigid and absorptive covers are compared. Among the tested models the best method of treating diffuser barriers with absorbent agents in the QRD is found to be a perorated sheet on top or inside the diffuser wells. It is found that increasing the absorption ability of QRD by fiberglass or high resistance wire meshes has negative effect on the efficiency of a QRD barrier. It is shown that, if the increase in absorption destroys the effect of resonance in wells, it will also have negative effect on the insertion loss performance of the QRD edge barrier.     

Infrared absorption in SiGe/Si multiple quantum wells

Infrared absorption has been used to investigate the subband structures in SiGe/Si quantum wells. The quantum wells are prepared using RRH/VLP-CVD and consist of 20 periods of and 60 periods of . The good periodical and interface sharpness of the SiGe/Si quantum wells have been shown by Auger Electron Spectroscopy (AES). The absorption peaks due to transitions between the hole subbands and the conduction band have been observed in infrared absorption spectra. The transverse photocurrent spectrum parallel to the growth plane have also shown absorption peaks due to transitions between the heavy and light hole band states and the conduction band states in quantum wells.     

Improvement of the carrier distribution with GaN/InGa N/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode

In Ga N light-emitting diodes(LEDs) with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer(EBL)and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.     

Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究

在研究大量实验曲线的基础上,指出势阱所有能级均有一定的宽度,电子或空穴在各能级中出现的概率符合正态分布,从理论上分析了I类超晶格和双势垒单势阱的发光光谱与吸收光谱.解释了GaAs/Ga1－xAlxAs多量子阱和超晶格吸收光谱吸收边及量子阱变窄时各吸收峰的“蓝移现象”及GaAs/Ga1－xAlxAs双势垒单量子阱样品的电流—电压特性曲线及电导—电压特性曲线的特征和出现的“负阻效应”.     

Electroluminescence from Si/SiGe quantum cascade emitters

Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of 20 ps between 4 and 150 K.     

非对称量子阱中非线性光学吸收系数的计算

非对称量子阱中的非线性光学效应因其潜在的实用价值而引起人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.以Pschl-Teller势阱为例研究了影响非对称量子阱中的非线性光学吸收系数的因素.考虑到带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pschl-Teller势阱中的线性与三阶非线性光学吸收系数的表达式.因该势阱中有两个可调参数,通过调节系统的参数,发现该系统的非线性光学吸收系数呈规律性的变化.以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算,通过调节系统的参数,数值计算结果表明,入射光强以及系统的非对称性对量子阱的非线性光学吸收系数有较大的影响,从而为实验上研究非对称量子阱的非线性光学效应提供了必要的理论依据.     

缓冲层对量子阱二能级系统中电子子带间跃迁光吸收的影响

由于ZnO缓冲层对纤锌矿ZnO/Mg_xZn_(1-x)O有限深单量子阱结构左垒的限制作用,导致阱和右垒的尺寸、Mg组分值等因素将影响系统中形成二能级.本文考虑内建电场、导带弯曲及材料掺杂对实际异质结势的影响,利用有限差分法数值求解Schr?dinger方程,获得电子的本征能级和波函数,探讨ZnO缓冲层对此类量子阱形成二能级系统的尺寸效应及三元混晶效应的影响;利用费米黄金法则探讨缓冲层、左垒、阱及右垒宽度和三元混晶效应对此类量子阱电子子带间跃迁光吸收的影响.计算结果显示:对于加入ZnO缓冲层的ZnO/Mg_xZn_(1-x)O有限深单量子阱二能级系统,左垒宽度临界值会随着阱宽和Mg组分值的增大而逐渐减小,随着右垒宽度和缓冲层厚度的增大而逐渐增大;量子阱中电子子带间跃迁光吸收峰会随着左垒、右垒尺寸以及Mg组分的增大发生蓝移,随着阱宽增大而发生红移.本文所得结果可为改善异质结器件的光电性能提供理论指导.     

Influence of time-periodic potentials on electronic transport in double-well structure

Within the framework of the Floquet theorem, we have investigated single-electron photon-assisted tunneling in a double-well system using the transfer matrix technique. The transmission probability displays satellite peaks on the both sides of main resonance peaks and these satellite peaks originate from emission or absorption photons. The single-electron resonance tunneling can be control through changing applied harmonically potential positions, such as driven potential in wells, in barriers, or in whole double-well system. This advantage should be useful in the optimization of the parameters of a transmission device.     

Ⅱ—Ⅵ族稀磁半导体ZnSe／Zn1—xMnxSe超晶格中的应力效应

本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ／Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。样品的组分ｘ＝０．２，０．３，０．４，测量温度为Ｔ＝１１￣３００Ｋ。结果表明：由于应力效应，ＺｎＳｅ／Ｚｎ１－ｘＭｎｘＳｅ超晶格中的激子能量随ｘ值增加而发生红移。在相同组分下，不同阱、垒宽度比使应力的分布产生明显变化，从而影响超晶格中激子能量。实验与理论计算结果相一致。超晶格中光致发光峰随温度