Efficient second-harmonic generation by scattering from porous gallium phosphide

We experimentally study second-harmonic generation by femtosecond Cr: forsterite-laser radiation scattered on the surface of porous gallium phosphide with characteristic pore sizes and distances between the pores comparable with the second-harmonic wavelength. The intensity of the second-harmonic signal from samples with initial crystallographic surface orientations (110) and (111) is more than an order of magnitude higher than the intensity of the second harmonic generated in reflection from single-crystal gallium phosphide. The efficiency of second-harmonic generation by macroporous gallium phosphide substantially increases as the pump wave-length becomes shorter. The influence of light localization and scattering effects on the enhancement of second-harmonic generation and polarization properties of the second-harmonic is discussed.     

Optical phonons of circular wires in porous GaP

The reflection spectra of porous gallium phosphide samples are investigated in the far infrared region of wave numbers (10–700 cm^?1). In addition of the longitudinal and transverse optical phonon modes corresponding to the bulk material, additional vibrational modes are detected. Their number and spectral position are correctly described by a model of a dispersive dielectric medium under the assumption that porous gallium phosphide is formed by crystallites whose shape is close to cylindrical. It is concluded that such vibrational modes are optical phonons confined by the volume of the quantum wire. The experimental optical reflection spectra are used to obtain estimates of the average diameter of nanocrystallites forming the porous GaP layer.     

Disorder-correlated enhancement of second-harmonic generation in strongly photonic porous gallium phosphide

We report an order of magnitude enhancement of second-harmonic generation (SHG) from porous gallium phosphide relative to SHG in crystalline gallium phosphide. Optical heterodyning measurements of photon free-path length reveal a correlation between SHG enhancement and disorder of the porous material.     

Phase-matched third-harmonic generation in anisotropically nanostructured silicon

A frequency-tunable laser system based on an optical parametric oscillator is used to implement phase-matched third-harmonic generation in porous silicon films with a strong form birefringence. Phase matching, orientation dependences, and the behavior of the third harmonic as a function of the thickness of an absorbing film are confirmed by calculations and linear-optical measurements.     

Dynamically phase-matched terahertz generation

We present the generation of intense terahertz pulses by optical rectification of 780 nm pulses in a large area gallium phosphide crystal. The velocity mismatch between optical and terahertz pulses thereby limits the bandwidth of the terahertz pulses. We show that this limitation can be overcome by a dynamic modification of the refractive index of the gallium phosphide crystal through generation of hot phonons. This is confirmed by excellent agreement between experimental results and model calculations.     

Optical third-harmonic generation in coupled microcavities based on porous silicon

The resonance features of the third-harmonic generation have been observed in 1D coupled microcavities consisting of three Bragg reflectors and two identical half-wave layers of mesoporous silicon. The third-harmonic intensity increases by a factor of about 10³ in the resonance of fundamental radiation with each of the modes of coupled microcavities. It has been shown that the resonance positions in the angular spectra of the third-harmonic intensity depend on the coupling between microcavities that is determined by the transmission of the intermediate Bragg reflector. In the framework of the transfer-matrix method with nonlinear sources, it has been shown that the basic mechanism of the enhancement of the third-harmonic generation in coupled microcavities based on porous silicon is the constructive interference of the partial third-harmonic waves that are generated by near-surface layers.     

Effect of photonic crystal structure on the nonlinear optical anisotropy of birefringent porous silicon

Anisotropic photonic crystal structures consisting of birefringent porous silicon layers with alternating porosity were fabricated. The in-plane birefringence formed as a result of anisotropic etching in Si(110) results in unique multilayered structures with two distinct photonic bandgaps for orthogonal light polarizations. Nonlinear optical studies based on the third-harmonic generation from these structures demonstrate variation in the symmetry of the nonlinear optical response.     

Giant third-harmonic in porous silicon photonic crystals and microcavities

A giant enhancement (no less than by 10³) of the optical third-harmonic generation in one-dimensional porous silicon microcavities and photonic crystals was observed experimentally. The enhancement is due to the resonant enhancement of the fundamental field in the cavity mode and the fulfillment of the phase matching condition at the photonic band gap edges of the photonic crystal and in the vicinity of the microcavity mode.     

Microscopic structure of semiconductor surfaces

To study the initial reaction steps of hydrogen, oxygen, and water, on differently prepared single crystal surfaces of silicon, germanium/silicon alloys, indium phosphide and gallium arsenide, we used high-resolution electron energy-loss spectroscopy (HREELS) in combination with low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Very recently, we started a program on the hydrogenation of III–V compound semiconductors, and on the oxidation of Si and III–V compound semiconductors, using alkali metals as a catalyst. This paper summarizes the present stage of our investigations, describing in particular aspects of the microscopic structure of differently prepared semiconductor surfaces.     

Optical third-harmonic generation in one-dimensional photonic crystals and microcavities

The formalism of nonlinear transfer matrices is used to develop a phenomenological model of a cubic nonlinear-optical response of one-dimensional photonic crystals and microcavities. It is shown that third-harmonic generation can be resonantly enhanced by frequency-angular tuning of the fundamental wave to the photonic band-gap edges and the microcavity mode. The positions and amplitudes of third-harmonic resonances at the edges of a photonic band gap strongly depend on the value and sign of the dispersion of refractive indexes of the layers that constitute the photonic crystal. Model calculations elucidate the role played by phase matching and spatial localization of the fundamental and third-harmonic fields inside a photonic crystal as the main mechanisms of enhancement of third-harmonic generation. The experimental spectrum of third-harmonic intensity of a porous silicon microcavity agrees with the calculated results.     

Forbidden optical transitions between impurity levels in silicon and gallium phosphide

Experimental estimates are made of absorption cross sections for forbidden optical transitions from the ground state to long-lived excited states of P, As, Sb, In, and Ga impurities in silicon and Te impurities in gallium phosphide. The results can be used to predict the possibility of long-wavelength stimulated emission being excited as a result of the population inversion of long-lived impurity states in these materials.     

磷砷化镓黄色发光二极管

采用掺氨砷压法在磷化镓衬底上外延生长掺碲n型的GaAs0.15P0.85:N/GaP材料,制成磷砷化镓黄色发光二极管,测量了其光学和电学性能.讨论了影响器件发光效率的因素.     

Compact and cost-effective scheme for THz generation via optical rectification in GaP and GaAs using novel fs laser oscillators

We demonstrate a compact and cost-effective setup to generate broadband THz radiation. As pump source we use a diode-pumped solid-state femtosecond oscillator or a femtosecond fiber laser system, partially in combination with an optical parametric oscillator. For the THz generation we utilize optical rectification in gallium phosphide (GaP) and gallium arsenide (GaAs). The THz power is on the order of 1 μW and we demonstrate imaging and spectral measurements with this setup.     

Highly efficient direct third-harmonic generation based on control of the electro-optic effect in quasi-periodic optical superlattices

We present a method for controlling the efficiency of direct third-harmonic generation in quasi-periodic optical superlattices by means of the electro-optic effect. The calculated results manifest that this method is extremely efficient for achieving high efficiency of direct third-harmonic generation in predesigned quasi-phase-matched coupled parametric processes and is feasible at any given fundamental intensity. In addition, we demonstrate that the electro-optic control approach is significantly better than the temperature-control method.     

Efficient energy conversion for cubic third-harmonic generation that is phase matched in KTiOPO(4)

We demonstrate, for the first time to our knowledge, that efficient third-harmonic generation can be achieved with a cubic contribution much larger than the quadratic processes. An energy-conversion efficiency of 2.4% is achieved for cubic third-harmonic generation that is phase matched along the x axis of a KTiOPO(4) crystal by use of a picosecond fundamental laser emitting at 1618 nm. The associated cascading processes are only 10% of the pure cubic interaction, which is very suitable for study of the specific quantum optical correlations. Calculations of the third-harmonic generation conversion efficiency with respect to group-velocity dispersion and to the longitudinal Gaussian beam profile account well for our experimental results.     

Electrical and optical properties of gallium phosphide films

The electrical and optical properties of gallium phosphide films, prepared by the explosive evaporation and three-temperature methods, are studied. It is shown that film properties are strongly dependent on method of preparation and substrate temperature. Gallium phosphide films prepared by explosive evaporation having perfect structure possess the best electrical and optical properties.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 54–58, June, 1971.     

Simulation of kinetics of water temperature-programmed desorption from n-GaAs(100) and n-GaP(100) semiconductor surfaces

The energy spectra of adsorption centers on the n-GaAs(100) and n-GaP(100) surfaces are studied using temperature-programmed desorption of water. The desorption spectra are analyzed in terms of the model of discrete adsorption centers, which assumes the presence of a loosely bound precursor state. The values of frequency factors and activation energies of desorption are in good agreement with the frequency of electronic transitions and energies of surface electronic states in gallium arsenide and gallium phosphide. It is concluded that the water desorption kinetics is limited by slow electronic processes on the surface of the semiconductors.     

Terahertz generation based on parametric conversion: from saturation of conversion efficiency to back conversion

By stacking alternatively rotated gallium phosphide (GaP) plates, the maximum photon conversion efficiency of 40% for the terahertz (THz) generation based on difference-frequency generation has been achieved. The corresponding peak power generated inside the four GaP plates approaches 4 kW. As the number of plates is increased from four to five, the THz output power is significantly decreased, due to back parametric conversion.     

Third-harmonic generation in cylindrical parabolic quantum wires with static magnetic fields

The third-harmonic generation (THG) and its conversion efficiency in Al_xGa_1-xAs/GaAs cylindrical parabolic quantum wires with static magnetic fields are studied in detail. The calculated results show that the parabolic confining potential and the static magnetic field have evident influence on the THG and its conversion efficiency. In addition, the conversion efficiency of the THG is also related to the input optical intensity. It is noted that very high conversion efficiency of the THG can be obtained by increasing properly the input optical intensity and choosing an optimized parabolic confining potential and applied static magnetic field.     

GaN基发光二极管衬底材料的研究进展

GaN基发光二极管(LED)作为第三代照明器件在近年来发展迅猛.衬底材料作为LED制造的基础,对器件制备与应用具有极其重要的影响.本文分析综述了衬底材料影响LED器件设计与制造的关键特性(晶格结构、热胀系数、热导率、光学透过率、导电性),对比了几种常见衬底材料(蓝宝石、碳化硅、单晶硅、氮化镓、氧化镓)在高质量外延层生长、高性能器件设计和衬底材料制备方面的研究进展,并对几种材料的发展前景做出了展望.