On the engulfment of spherical particles by a moving ice-liquid interface

Second phase particles suspended in a liquid undergoing solidification are either repelled and swept along by the advancing solid-liquid interface or, beyond a critical velocity of the solidification front, engulfed and encapsulated into the solid phase. In this study critical encapsulation velocities were determined for spherical latex particles at an advancing ice-water interface by means of a gradient freezing stage attached to a light microscope. The influence of the particle radius, the temperature gradient at the planar solidification interface, and the viscosity of the melt has been investigated. The experimental data confirm the theoretically predicted 1/R relationship between the particle radius and the critical growth velocity V_c. The effect of the temperature gradient can be described by a power law (V_c ∝ G^1/4), but its influence on V_c may be even weaker. The inverse proportionality between V_c and the dynamic viscosity of the melt may also be weaker than it would result from Stokes' law. The critical distance between particle and solidification interface was calculated to be in the range of 0.76 to 16.3 nm depending on the theoretical model applied. The resulting Hamaker constant of the system ice/polystyrene/water is -1.7 x 10^-21 J.     

吡啶鎓盐配体构筑的多钼酸基配合物的合成、结构及光催化性能

本文在水热条件下合成了一例同多钼酸阴离子[δ-Mo₈O₂₆]^4-基配合物[Co(bipbc)(δ-Mo₈O₂₆)_0.5(H₂O)₃] (bipbc=4,4-双[(4-羧基吡啶)甲基]联苯),其为一维链状结构,包含环型双核钴配合物[Co₂(bipbc)₂]⁴⁺和[δ-Mo₈O₂₆]^4-簇。该配合物结晶于单斜晶系,P2₁/n空间群,a=1.147 9(8) nm,b=1.440 9(11) nm,c=2.082 9(16) nm,β=93.469(2)°,V=3.438 8(4) nm³,Z=4,M_r=1 129.18,F(000)=2 204,μ=1.979 mm^-1,D_c=2.181 mg·m^-3,S=1.019,R₁=0.056 2,wR₂=0.137 7。光催化性质研究表明,在可见光、近红外光和全光谱的光照条件下,标题配合物对龙胆紫(GV)和亚甲基蓝(MB)的降解,表现出一定的光催化活性。     

草酸配体修饰的锆取代型硅钨-氧簇合物的合成、结构和电化学性质研究

通过水热反应,成功合成了一个草酸配体修饰的四核锆取代的夹心型硅钨-氧簇合物H₁₂Na₂[Zr₄(μ₃-O)₂(μ₂-OH)₂(Ox)₂(α-SiW₁₀O₃₇)₂]·22H₂O (Ox=oxalic acid)。该夹心型硅钨-氧簇是由两个{α-SiW₁₀O₃₇}簇块通过一个{Zr₄(μ₃-O)₂(μ₂-OH)₂(Ox)₂}簇连接构成的。通过X-射线单晶衍射、IR、TG以及元素分析对该簇合物进行表征。晶体结构分析表明: 该簇合物结晶于单斜晶系,P2₁/c空间群,a=2.132 2 (6) nm, b=1.271 6 (4) nm, c=2.223 1 (7) nm, β=110.933(4)°,V=5.629 9(3) nm³,Z=2,R₁=0.061 5,wR₂=0.164 4。电化学和电催化性质研究表明标题簇合物对NO^-₂的还原有很好的电催化效果。     

Keggin型多酸基超分子化合物H3[{H(4-AP)}6(PMoⅤ6MoⅥ6O40)]的结构和电催化性能

通过水热合成方法,以钼酸铵、氯化镍和4-氨基吡啶为原料成功合成了一个Keggin型多酸基超分子化合物H₃[{H(4-AP)}₆(PMo^V₆Mo^VI₆O₄₀)] (4-AP=4-氨基吡啶)。该化合物的结构单元包含一个[PMo^V₆Mo^VI₆O₄₀]^9-阴离子和6个质子化的配体。而[PMo^V₆Mo^VI₆O₄₀]^9-阴离子与配体之间通过N(1)—H(1)…O(3)、N(2)—H(2A)…O(5)和N(2)—H(2B)…O(1)三种氢键相互作用,进而形成二维超分子层。通过X射线单晶衍射、IR和粉末X射线衍射对其进行表征。晶体结构分析表明:该标题化合物属于三方晶系,R-3空间群,a=2.191 2 (10) nm, b=2.191 2 (10) nm, c=1.042 3(5) nm, α=β=90°, γ=120°, V=4.333 8(4) nm³, Z=3, R₁=0.036 2, wR₂=0.095 6, 电催化性质研究表明该标题化合物对H₂O₂和K₂Cr₂O₇具有良好的电催化还原效果,以及对抗坏血酸具有良好的电催化氧化效果。     

基于神经网络和遗传算法的铸锭晶体硅质量控制及工艺优化

铸锭晶体硅是太阳能级晶硅材料的重要来源之一,为了进一步降低硅片成本,需要在保证晶体质量的同时发展大尺寸铸锭晶硅。影响铸造晶体硅质量的热场控制核心参数包括晶体生长速度与生长界面温度梯度之比V/G、壁面热流q、生长界面高度差Δh和硅熔体内部温差ΔT等。针对铸锭晶体硅生长过程中的质量控制问题,本研究基于人工神经网络(ANN)模型对晶体生长过程建立了工艺控制优化方法,利用实验测量数据和数值仿真模拟结果构建铸锭晶体硅生长过程的工艺控制数据集,以底部隔热笼开口和侧、顶加热器功率比作为主要工艺控制参数,V/G、|q|、|Δh|和ΔT为优化目标,建立用于研究晶体生长工艺控制参数和热场参数之间映射关系的神经网络模型。使用训练完成的模型分析底部隔热笼开口及侧、顶加热器功率比对晶体生长过程热场的影响规律,并采用遗传算法(GA)对铸锭晶体硅生长过程的工艺控制参数以提高晶体质量为目标进行优化,最后结合实际生产中的检测图像讨论了V/G对晶体质量的影响。研究表明晶体生长中期的V/G沿横向变化较平缓,对应缺陷较少且分布均匀,因此增大V/G在横向上的均匀度也是提高晶体质量的一个重要因素。     

Development of dendrite array growth during alternately changing solidification condition

To investigate competitive growth in a dendrite array a directional solidification study was carried out on a succinonitrile–acetone alloy. In the experiment the temperature gradient G applied is alternately altered over a wide range, increased from a lower to a higher limit, and then decreased back to the lower one. It was found that source dendrites, i.e. parent dendrites, are not superior to derived dendrites in terms of growth competition. The orientation deviation between neighbouring dendrites impacts both local dendrite creation and elimination. At lower gradients, the new dendrites grow out from the ternary arms, while at the higher gradients new dendrites originate directly from the secondary arms. During increasing and decreasing G, average primary dendrite spacing λ measured traces out different paths, revealing an unclosed hysteresis loop in the λ–G-diagram.     

铜(Ⅱ)配合物{[Cu(OMBA)2]2·(DMF)2}的合成、CT-DNA结合及细胞毒性

合成了配合物{[Cu(OMBA)₂]₂·(DMF)₂}(OMBA =邻甲基苯甲酸,DMF = N,N-二甲基甲酰胺),配合物结构经元素分析、IR和X射线单晶衍射表征,该配合物属于三斜晶系,P1空间群,晶胞参数为a=1.037 0(5) nm, b=1.053 6(4) nm, c=1.105 9(5) nm, α=62.737(6)°, β=73.355(7)°, γ=63.231(7)°, Z=1, D_c=1.416 g·cm^-3, F(000)=422,最终结构残差因子R₁=0.051 5, wR₂=0.140 4。采用紫外、荧光和黏度法研究了配合物和小牛胸腺DNA (CT-DNA)的相互作用方式。结果表明,配合物与DNA的结合常数K_b=939.61 L·mol^-1,K_sv=3.00×10³ L·mol^-1,猝灭速率常数K_q=3.00×10¹¹ L·mol^-1·s^-1。配合物静态猝灭CT-DNA的荧光,结合常数K_a=5.38×10³ L·mol^-1,结合位点n=1,配合物对胃癌细胞A549、宫颈癌细胞Hela和肝癌细胞HepG2有抗增殖作用。     

Profiling band structure in GaN devices by electron holography

Electron holography in a field emission gun transmission electron microscope has been used to profile the inner potential V₀ across GaN/x nm In_0.1Ga_0.9N/GaN/(0 0 0 1) sapphire samples (x=10, 40 nm) grown by molecular beam epitaxy and viewed in cross-section. Results are presented which suggest a decrease in V₀ of 3–4 V across the InGaN layer in the [0 0 0 1] direction. It is proposed that the results can be explained by charge accumulation across the InGaN layer and that the opposing contributions due to piezoelectric and polarisation fields are effectively masked by Fermi level pinning.     

MeCeOx(Me=In,Zr)固溶催化剂制备及催化合成碳酸二甲酯研究

采用液相共沉淀法制备了MeCeOx(Me=In,Zr)双金属氧化物固溶催化剂.借助X射线衍射(XRD)、X射线光电子能谱(XPS)、程序升温还原(H2-TPR)、程序升温脱附(CO2-TPD、CH3OH-TPD)及漫反射傅里叶变换红外光谱(DRIFTS)等手段对催化剂物化性质进行了分析表征.在系统考察不同金属氧化物种类...     

手性镝(III)-酒石酸配合物的合成、单晶转换及热稳定性研究

以2,3-二乙酰对甲苯-D-酒石酸(D-H₂DTTA)为原料,与金属Dy(III)盐反应,经过单晶-单晶转换,得到一种新的酒石酸(H₂tar)配合物[Dy(Htar)₃(H₂O)₃]_n(1),对该配合物用元素分析、红外光谱、X-射线单晶衍射、粉末衍射以及差热-热重等进行了表征。晶体结构分析表明,配合物1属三方晶系,R3空间群,晶胞参数为a=b=2.723 16(14) nm,c=0.762 75(6) nm,α=β=90.00°,γ=120.00°,V=4.898 5 (6) nm³,Z=3, 剑桥晶体数据库(Cambridge Crystallographic Data Centre, CCDC)编号为1498504。配合物中的金属Dy³⁺分别与三个酒石酸离子配体Htar^-上的六个氧原子和三个配位水分子上的三个氧原子配位,形成九配位三帽三棱柱构型。配合物1在c方向上通过O1和O5原子连接成一维链状结构,相邻Dy³⁺之间的距离为0.762 8(1) nm。配合物1是由[Dy(HDTTA)₃(CH₃OH)₃]_n经单晶-单晶转换过程得到,其转换过程包括酯基水解及水分子取代两类反应。配合物1具有一定的热稳定性,45~166 ℃失去配位水分子,高于166 ℃配合物骨架坍塌。     

4-硝基氮氧化吡啶-2-甲酸构筑的镧、镨配合物的合成、晶体结构及荧光性质

选择刚性有机化合物4-硝基氮氧化吡啶-2-甲酸(POA)作为配体,与稀土金属La(III)、Pr(III)反应,合成了2个一维配位聚合物。X射线单晶衍射结果表明：配合物1的分子式为{[La(POA)₃H₂O]·CH₃OH}_n,属于单斜晶系,空间群是P2₁/c。该晶胞参数分别为a=1.756 8 nm,b=0.663 6 nm,c=2.048 6 nm,α=90°,β=96.96°,γ=90°,V=2.370 7 nm³,M_r=738.28。配合物2的分子式为{[Pr(POA)₃H₂O]·H₂O}_n,属于单斜晶系,空间群是P2₁/c。该晶胞参数分别为a=1.757 8 nm,b=0.656 9 nm,c=2.046 7 nm,α=90°,β=97.20°,γ=90°,V=2.344 8 nm³,M_...     

吡嗪席夫碱银配位聚合物的晶体结构、发光性质和抗菌活性

利用2-乙酰基吡嗪和异烟肼在无水乙醇中反应得到席夫碱化合物N-[(1-吡嗪基)-1-亚甲基]异烟酰肼(L)。以L和硝酸银为原料,通过扩散法合成了配位聚合物{[Ag₃L₂(NO₃)₂]CH₃CN}_n,并通过X-射线单晶衍射、元素分析、红外光谱、荧光光谱对其进行结构解析和性质表征。单晶衍射分析结果表明,该配位聚合物属单斜晶系,P2₁/c空间群,晶胞参数为a=0.611 70(10) nm,b=1.347 08(3) nm,c=2.018 69(4) nm,V=1.661 06(6) nm³,Z=2,Mr=970.19,Dc=1.940 g/cm³,配体分子以银离子为连接点形成二维网状结构。荧光光谱分析表明配体和配位聚合物均有较好的发光性能,且配位聚合物荧光强度优于配体。抗菌活性表明,配位聚合物对白色葡萄球菌、藤黄八叠球菌及枯草芽孢杆菌有较好的特异性,具有良好的医药应用前景。     

EXAFS and XANES joint analyses for semiconducting vanadium phosphate glasses

Vanadium EXAFS spectra of 50V₂O₅-50P₂O₅ glasses with different C = V⁺⁴/V_tot have been measured. The V-O distances increase by ΔR₁ = (0.03 ± 0.02) Å to ΔR₂ = (0.07 ± 0.03) Å going from a glass with C = 0.64 to C = 0.84 and from C = 0.51 to C = 0.84, respectively. The EXAFS data show a basically similar structure of the vanadium sites for both the V⁴⁺ and V⁵⁺ ionic states. The density of the glasses increases with C from the value d₁ = 2.81 g/cm³ for C = 0.51 to d₂ = 2.92 g/cm³ for C = 0.84 indicating a more random packing of glass units.     

Synthesis, thermal and magnetic properties of new metal iodate: (LiFe1/3)(IO3)2

This paper reports the detail synthesis of a new kind of metal iodate, anhydrous (LiFe_1/3)(IO₃)₂, from aqueous solutions. The synthesized compound shows spinal morphology and is chemical stable up to 400°C. The iodate shows paramagnetic behavior from room temperature down to 4.2 K. At room temperature, the new compound has a hexagonal structure with the lattice parameters a=5.4632(2) Å, c=5.0895(6) Å, Z=1, space group of P6₃.     

NMR studies of Na2O---B2O3---SiO2 glasses of mid-alkali content

¹¹B Fourier transform spectra have been used to study the structure of Na₂O---B₂O₃---SiO₂ glasses of mid-alkali content. Based on the measurements of the fraction N₄ of four-coordinated borons, it has been found that for K = mol.% SiO₂/mol.% B₂O₃ 8 and R = mol.% Na₂O/mol.% B₂O₃ = 1, N₄ is obviously smaller than 1 rather than equal to 1 as assumed in the relevant literature. Only when R reaches a value appropriately greater than 1, can the case where N₄ = 1 occur. A structural model suggested in this paper can satisfactorily explain the fact.     

制备方法对Al2O3-CeO2物化性质及CO2加氢制甲醇催化性能的影响

复合氧化物界面性质与CO₂加氢制甲醇反应的催化性能有着重要的关系。本文对比考察了物理共混法、浸渍法、传统共沉淀法和微流控连续共沉淀法对Al₂O₃-CeO₂复合氧化物界面性质和催化性能的影响。浸渍作用尽管使Al₂O₃/CeO₂界面产生了一定的结构性质调变,但贫瘠的氧空位缺陷导致催化反应效率低。共沉淀样品中固溶结构的存在增强了Al₂O₃/CeO₂界面的相互作用,增大了电子结合能,形成的大量氧空位缺陷有利于CO₂活化转化。而微流控连续共沉淀法合成样品因具有更小的晶粒尺寸、均匀的复合相结构和丰富的氧空位缺陷,表现出更为优异的催化性能。在原料气配比为V(H₂)∶V(CO₂)∶V(N₂)=72∶24∶4,反应温度为320 ℃,反应压力为3 MPa,体积空速为9 000 mL·g^-1·h^-1的条件下,Al₂O₃-CeO₂复合氧化物的CO₂转化率、甲醇选择性及甲醇时空产率分别达到15.3%,86.4%和0.076 g·mL^-1·h^-1。     

双向低触发电压横向晶闸管放电管研究

依据触发电压V_S、触发电流I_S、维持电流I_H及触发电压、维持电流高低温变化率指标要求,利用Silvaco-TCAD半导体器件仿真软件完成了双向低触发电压横向晶闸管(SCR)放电管的设计。详细分析了对触发特性产生显著影响的结构参数(N^-衬底区、寄生PNP晶体管P^-集电区、寄生NPN晶体管P^-基区、N⁺阴极区、N⁺触发区、寄生PNP晶体管P^-集电区与寄生NPN晶体管P^-基区间距、寄生NPN晶体管表面基区宽度)对器件输出I-V特性及抗瞬态电流烧毁能力的影响。根据设计得到的器件结构参数,绘制版图、制定双向低触发电压横向SCR放电管工艺方案并进行试制。通过实际流片,对关键的设计及工艺进行攻关,研制出样片触发电压V_S、触发电流I_S、维持电流I_H及触发电压、维持电流高低温变化率完全满足电参数指标要求。     

高居里温度铁电单晶PIN-PT的机电性能

弛豫铁电单晶Pb(In_1/2Nb_1/2)O₃-PbTiO₃(PIN-PT)相较于常用的Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃(PMN-PT)具有更高的居里温度,在高稳定性、高性能的传感器、换能器方面具有应用前景。本工作采用谐振法研究了[001]方向极化的0.66PIN-0.34PT铁电单晶的全矩阵机电性能参数。0.66PIN-0.34PT 单晶的三方-四方相变温度(T_RT)约为160 ℃,居里温度(T_C)约为260 ℃,室温压电系数d₃₃、d₃₁、d₁₅分别为1 340 pC/N、-780 pC/N、321 pC/N,介电常数ε^T₃₃、ε^S₃₃、ε^T₁₁、ε^S₁₁分别为2 700、905、2 210、1 927,机电耦合系数 k₃₃、k₃₁、k₁₅、k_t分别为 87%、58%、38%、61%。其纵向压电常数(d₃₃)和纵向机电耦合系数(k₃₃)小于 PMN-PT 单晶,但是横向压电性能(d₃₁)和剪切压电性能(d₁₅)都略高于PMN-PT单晶。另外,研究了机电耦合性能随温度的变化趋势,发现0.66PIN-0.34PT单晶在150 ℃以下有较好的温度稳定性。     

Mg掺杂调制铜铁矿结构CuAlO2多晶的微结构和电热传导

采用固相反应法制备铜铁矿结构的CuAl_1-xMg_xO₂ (x=0、0.005、0.01、0.02、0.03、0.04)多晶,研究了Mg掺杂对CuAlO₂多晶结构和性能的影响。Mg掺杂量x从0增加到0.02,样品均为菱方R3m单相,密度依次提高;所有样品呈半导体的热激活电输运行为,x=0.02样品在室温下的电阻率是未掺杂样品的1/19,热激活能显著下降(x=0时,ρ_{300 K}~5.54 Ω·m,E_a~0.328 eV;x=0.02时,ρ_{300 K}~0.29 Ω·m,E_a~0.218 eV),载流子浓度增加1个量级,主要因为Mg²⁺取代Al³⁺,引入新的受主能级。x>0.02时,MgAl₂O₄尖晶石杂相出现,使其电导率和热导率降低。CuAl_1-xMg_xO₂多晶的晶格热导率在总热导率中占绝对优势,且随温度升高(300~500 K)而下降,晶格热导Callaway模型模拟表明,所有样品的热阻主要源于点缺陷-声子散射。与x=0相比,x=0.02样品的室温热导率增大1倍(κ~13.065 0 W/(m·K)),声速增大,点缺陷-声子散射减弱,分析认为掺Mg形成强的Mg—O键,提高了晶体的弹性模量和声子频率,减弱了本征点缺陷、Mg掺杂引起的质量波动和应变场波动对声子的散射,同时Mg掺杂样品的密度提高也有利于增加热导率。     

Periodic structure during unidirectional solidification for peritectic Cd–Sn alloys

Unidirectional solidification for the peritectic Sn–1.0, 1.5, 2.0 at% Cd alloys was carried out under temperature gradients of 2.7×10³ K/m for 4 mm diameter specimens, and 5.3×10³ K/m for 2 mm diameter specimens. A banded structure in which the two constituent phases alternatively form perpendicular to the growth direction was observed in the 2 mm diameter specimens. On the other hand, a competitive microstructure was obtained in the 4 mm diameter specimens, in which the two phases interlace and the three-phase junction fluctuated in the radial direction during unidirectional solidification. Formation of the banded structure depended on the specimen diameter, while the transition from the cellular interface to the planar interface was not affected by the specimen diameter. In the high G/V region for peritectic alloys, the growth morphology in which the phases grow side by side is unstable, even if the pulling rate and temperature profile are constant. The banded structure and the competitive structure originate through the same mechanism; this is intrinsic for peritectic alloys with two-phase composition.