Study of the luminescence properties of a novel rare earth complex Tb(DPC)22H2O

Rare earth complex Tb(DPC)₂2H₂O was synthesized by introducing Pyridine-2,6-dicarboxylic acid(H₂DPC) as the ligand and characterized by UV, fluorescent and infrared spectra as well as elemental analysis. The complex exhibited ligand-sensitized green emission, and it has the higher sensitized luminescent efficiency and longer lifetime. The effect and mechanism of the ligand (H₂DPC) on the luminescence properties of terbium complex was discussed. In device ITO/PVK/Tb(DPC)₂2H₂O/Al, Tb³⁺ may be excited by intramolecular energy transfer from ligand as observed by electroluminescence. The main emitting peak at 545 nm can be attributed to the transition of ⁵D₄→⁷F₅ of Tb³⁺ ion and this process results in the enhancement of green emission from electroluminescence device.     

Micro-Raman and photoluminescence study of urchin-like ZnO structure assembled with nanorods synthesized by hydrothermal method

Urchin-like ZnO structures assembled with nanorods have been synthesized by cetyltrimethylammonium bromide-assisted hydrothermal method. The as-obtained products were characterized by powder X-ray diffraction, field-emission scanning electron microscopy for the study of crystal structure and morphology. The ZnO urchin is constructed of well-assembled nanorods of length ~3 μm range and diameter ~20 nm. Micro-Raman study shows characteristic Raman-active mode of hexagonal ZnO at 439 cm⁻¹ and also mode related to defects at ~581 cm⁻¹. The ZnO urchin assembled with nanorods possessed band edge emission at 3.085 eV and defect related visible emission at 2.97, 2.57, and 2.36 eV.     

Rare-earth metal 8-hydroxyquinolinate complexes as materials for organic light-emitting diodes

Rare-earth metal 8-hydroxyquinolinates (q) were studied as emission layers for organic light-emitting diodes. Compounds Dyq₃, Tbq₃, and Smq₃ possess weak electroluminescence due to the emission of the ligand, and the electroluminescence of Hoq₃, Tmq₃, and Ybq₃ is due to electronic transitions of the lanthanide ion. The best electroluminescence characteristics were demonstrated by Scq₃ and Yq₃. The power efficiency of the organic light emitter based on ITO/TPD/Scq₃/Yb (ITO is tin-alloyed indium oxide, TPD is N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine) is 2.6 lm W⁻¹ at a luminance of the device of 300 cd m⁻².     

Using an excellent near-UV-excited cyan-emitting phosphor for enhancing the color rendering index of warm-white LEDs by filling the cyan gap

White light-emitting diodes (LEDs) with high color rendering index (CRI) and low correlated color temperature (CCT) are desirable for next-generation solid-state lighting. In this work, we demonstrated an efficient near-UV-excited cyan-emitting phosphor based on Ce³⁺-doped Ca₂LuHf₂Al₃O₁₂ (CLHAO) garnet, which could be used to cover the cyan gap for fabricating high-CRI warm-white LEDs. We found that the CLHAO:Ce³⁺ samples exhibited a broad excitation band in the 300–450 nm wavelength range peaking at 400 nm, and upon 400 nm excitation they showed broad cyan emission bands in the 420–600 nm spectral region with peak positions ranging from 477 to 493 nm. The optimal CLHAO:0.02Ce³⁺ sample had CIE color coordinates of (0.160, 0.255), and its internal and external quantum efficiencies were measured to be 84.3% and 60.8%, respectively. Impressively, the luminescence intensity of CLHAO:0.02Ce³⁺ sample at 423 K still remained at 62% of the initial value at 303 K, and the chromaticity shift was calculated to be as low as 1.7 × 10^?2, revealing its high thermal stability and color stability at a higher temperature. Finally, a warm-white LED device (CCT = 3,194 K) was fabricated by combining CLHAO:0.02Ce³⁺ cyan phosphors with commercial blue/green/red tricolor phosphors, showing bright white-light emission with a high CRI of 89.4, which was superior to that of another warm-white LED device (CRI = 83.2) fabricated without CLHAO:0.02Ce³⁺ cyan phosphors. These outstanding luminescence properties of CLHAO:Ce³⁺ cyan phosphors illustrated that they offer a new feasible approach for the production of high-CRI warm-white LEDs toward high-color-quality solid-state lighting.     

Excitation and decay of the C2Σ+u state of N+2 following collisions of He+ ions with N2 isotopes

A quantitative analysis is made of the N⁺₂ “2nd negative” emission (“2N”: C²Σ⁺_u → X²Σ⁺_g) produced by the impact of 500 eV to 25 keV He⁺ beams on ¹⁴N₂, ¹⁴N¹⁵N and ¹⁵N₂. Above about 5 keV, the relative 2N emission rates from the various vibrational levels of the C state are the same as those observed for ? 2 keV Ne⁺, or > / 90 eV electron-impact. These limiting distributions are compared to those predicted for a Franck-Condon excitation of the C state, modified by configuration interaction. The weakening in 2N emission at the vibrational levels ν′ > / 3 is ascribed to spontaneous C-state predissociation. The data fully confirm recent reports that this predissociation extends over a wide range of ν′ and that it is subject to a strong isotope effect. The ratios of the rates of C-state predissociation to 2N emission are obtained for the levels ν′ = 3 to 8 of each nitrogen isotope. By means of these data it is shown that near-resonant charge transfer dominates the distribution of vibrational excitation probabilities only at energies below about 10 eV. A comparison is made of absolute cross-sections for C-state emission with those for N⁺ and N⁺₂ production in He⁺/¹⁴N₂ collisions at energies between 5.5 eV and 25 keV.     

Blue-light-excitable broadband yellow-emitting CaGd2HfSc(AlO4)3:Ce3+ garnet phosphors for white light-emitting diode devices with improved color rendering index

The current commercial white light-emitting diodes (LEDs) are generally based on the combination of blue LED chips and Y₃Al₅O₁₂:Ce³⁺ yellow phosphors. However, because of the lack of red component, such white LED devices exhibit cool white-light emissions with low color rendering index (Ra < 75, R9 < 0). Therefore, it is urgent to discover new blue-light-excitable yellow-emitting phosphors with enhanced red emissions for fabricating high color-quality white LEDs. In the present work, we demonstrate a novel broadband yellow-emitting CaGd₂HfScAl₃O₁₂:Ce³⁺ garnet phosphor for blue-light-excited white LEDs with improved color rendering index. The as-prepared CaGd₂HfScAl₃O₁₂:Ce³⁺ garnet phosphor possesses a cubic structure with Ia$\overline{3}$d space group, and the unit cell parameters of the representative CaGd₂HfScAl₃O₁₂:2%Ce³⁺ phosphor are a = b = c = 12.450 Å, α = β = γ = 90°, and V = 1,929.59(4) ų. Impressively, we find that the CaGd₂HfScAl₃O₁₂:Ce³⁺ garnet phosphor shows an intense absorption band in the 300–500 nm wavelength range with a maximum at 452 nm owing to the 4f→5d transition of Ce³⁺ ions. On 452 nm excitation, the optimal CaGd₂HfScAl₃O₁₂:2%Ce³⁺ sample exhibits a broad asymmetric yellow emission band in the wavelength range of 470–750 nm with peak at 564 nm and full width at half maximum of 151 nm. The Commission Internationale de l’Eclairage chromaticity coordinates and internal quantum efficiency of the CaGd₂HfScAl₃O₁₂:2%Ce³⁺ sample are (0.4485, 0.5157) and 30.4%, respectively. Finally, a white LED device is fabricated by combing a 450 nm blue LED chip with commercial Y₃Al₅O₁₂:Ce³⁺ yellow-emitting phosphor, which generates white light with low color rendering index (CRI; Ra = 74.7, R9 = ?12.7) and high correlated color temperature (CCT = 6,554 K) under the 60 mA driving current. In sharp contrast, another white LED device, which is made by coating our as-prepared CaGd₂HfScAl₃O₁₂:2%Ce³⁺ yellow-emitting phosphors onto the surface of a 450 nm blue LED chip, produces white-light emission with high CRI value (Ra = 84.5, R9 = 26.3) and relatively low CCT of 5,649 K. This work reveals that the newly discovered broadband yellow-emitting CaGd₂HfScAl₃O₁₂:Ce³⁺ phosphors can serve as a potential color converter in high-color-quality phosphor-converted white LEDs.     

Photoluminescence properties and application of yellow Ca0.65Si10Al2O0.7N15.3:xEu2+ phosphors for white LEDs

A series of yellow-emitting oxynitride Ca_0.65Si₁₀Al₂O_0.7N_15.3:xEu²⁺ phosphors with α-sialon structure were synthesized. The phase composition and crystal structure were identified by X-ray diffraction and the Rietveld refinement. The excitation and emission spectra, reflectance spectra and thermal stability were investigated in detail, respectively. Results show that Ca_0.65Si₁₀Al₂O_0.7N_15.3:0.12Eu²⁺ phosphors can be efficiently excited by UV-Vis light in the broad range of 290–450 nm and exhibit broad emission spectra peaking at 550–575 nm. The concentration quenching mechanism are discussed in detail and determined to be the dipole-dipole interaction. When the temperature increased to 150 °C, the emission intensity of Ca_0.65Si₁₀Al₂O_0.7N_15.3:0.12Eu²⁺ phosphor is 88.46% of the initial value at room temperature. White LED was fabricated with N-UV LED chip combined with blue Ca₃Si₂O₄N₂:Ce³⁺ and yellow Ca_0.65Si₁₀Al₂O_0.7N_15.3:Eu²⁺ phosphors. The color rendering index and correlated color temperature of this white LED were measured to 78.94 and 6728.12 K, respectively. All above results demonstrate that the as-prepared Ca_0.65Si₁₀Al₂O_0.7N_15.3:xEu²⁺ may serve as a potential yellow phosphor for N-UV w-LEDs.     

Finding an efficient far-red-emitting CaMg2La2W2O12:Mn4+ phosphor toward indoor plant cultivation LED lighting

The development of high-brightness far-red-emitting phosphors with emission wavelength within 650–750 nm is of great significance for indoor plant cultivation light-emitting diode (LED) lighting. Herein, we demonstrate a novel efficient far-red-emitting phosphors CaMg₂La₂W₂O₁₂:Mn⁴⁺ (abbreviated as CMLW:Mn⁴⁺) toward application in plant cultivation LEDs. Interestingly, the CMLW:Mn⁴⁺ phosphors show a broad excitation band in the 250–600 nm spectral range with two peaks at 352 and 479 nm, indicating they could be efficiently excited by near-ultraviolet and blue light. Under 352 nm excitation, the CMLW:Mn⁴⁺ phosphors exhibit an intense far-red emission band in the wavelength range of 650–800 nm peaking at 708 nm, corresponding to the ²E_g → ⁴A_2g transition of Mn⁴⁺ ions. Mn⁴⁺ doping concentration-dependent luminescence properties are studied in detail, and the concentration quenching mechanism is also investigated. Particularly, the internal quantum efficiency of CMLW:Mn⁴⁺ phosphors reaches as high as 44%, and their PL spectra match well with the absorption spectrum of phytochrome P_FR (P_FR stands for far-red-absorbing form of phytochrome). Furthermore, a prototype LED device is fabricated by coating the as-prepared CMLW:0.8%Mn⁴⁺ phosphors on a 460 nm blue LED chip, which produces bright far-red emissions upon 20–300 mA driving currents. This work reveals that the newly discovered far-red-emitting CMLW:Mn⁴⁺ phosphors hold great potential for application in indoor plant cultivation.     

Structural and optical properties of ZnO thin films by the spin coating Sol-Gel method

ZnO thin films were deposited onto glass subsrates by a Sol-gel spin coating method. The structural and optical properties of ZnO thin films were investigated. The molar ratios of the zinc acetate dihydrate to Monoethanolamine were maintained 1:1. The as-grown film was sintered 250 °C for 10 min, then annealed in air at 500 °C for 30 min. The XRD results indicate that ZnO films were strongly oriented to the c-axis of the hexagonal nature. Absorption measurements were carried out as a function of temperature with 10 K steps in the range 10–320 K. The band gap energy was measured 3.275 and 3.267 eV for 0.5 and 1.0 molarity (M) ZnO thin films at 300 K. The steepness parameters were observed between 10 and 320 K and their extrapolations converged at (E₀, α₀) = 3.65 eV, 172,819 cm⁻¹ and 3.70 eV, 653,436 cm⁻¹ for 0.5 and 1.0 M ZnO thin films, respectively.     

Cathodoluminescence study of defects in thermal treatment of zinc titanate thin films deposited by a cosputtering process

The effects of thermal treatment of polycrystalline ZnO–TiO₂ systems on their luminescence emission and phase properties were investigated using ex situ cathodoluminescence and backscattering electron microscopy. The main features of the spectrum are a blue band at 2.75 eV for the phase of TiO and a complex visible band at 2.18 eV for the phase of ZnO, whose peak intensity depends on the annealing temperature. The spectrum intensity is dominated by the ZnO phase when annealing temperature was 720°C, which is attributed to abnormal grain growth. Competition is observed between the broad band peaked at 2.18 eV and visible band peaked at 2.75 eV as the annealing temperature changed (820°C‐920°C). The cathodoluminescence density is gradually governed by the TiO₂ phase, and the emission in polychromatic and monochromatic imaging is stronger equally at 920°C. The nucleation of the TiO₂ and ZnO grains is present in the backscattering electron images as well.     

A near-infrared phosphor doped with Cr3+ towards zero-thermal-quenching for high-power LEDs

Cr³⁺-doped phosphors show significant application potential in near-infrared (NIR) light-emitting diodes (LEDs). However, the development of thermally stable and efficient NIR phosphors still faces enormous challenges. Herein, NIR phosphors K₂NaMF₆:Cr³⁺ (M³⁺ = Al³⁺, Ga³⁺, and In³⁺) were synthesized by the hydrothermal method. The represented K₂NaAlF₆:Cr³⁺ phosphor can be effectively excited by blue light (～430 nm) to present broadband emission at half a maximum of 96 nm peaking at ～ 728 nm. Meanwhile, the K₂NaAlF₆:Cr³⁺ phosphor exhibits excellent internal quantum efficiency (IQE = 68.08%) and nearly zero-thermal-quenching behavior, which is able to maintain 96.5% emission intensity at 150 °C of the initial value at 25 °C. The NIR phosphor-converted LED was fabricated based on K₂NaAlF₆:Cr³⁺ phosphor and a blue LED chip, showing a NIR output power of 394.39 mW at 300 mA with a high photoelectric conversion efficiency of 10.9% at 20 mA. Using the high-power NIR LED as a lighting source, transparent and quick veins imaging as well as non-destructive testing were demonstrated, suggesting the NIR phosphor has a wide range of practical applications.     

Physical properties of suspension ZnO nanoparticles prepared by wet chemical method: Comparison study

In this work a suspension of Nano-crystalline of ZnO particle is prepared by wet chemical at different temperature and concentration. From FTIR spectral exhibit present of Zn–O bond which indicate to formation ZnO particles. While all suspension and nano films exhibit a high transmittance in visible region about 90% which falls sharply in the UV region. The particle size is measured by using effective mass approximation (EMA), which was approximation (1.7–1.96 nm), and the band gap changes from 3.95 to 4.52eV for nanoparticles in suspension, and change from 3.76 to 3.94 eV for nanoparticles in ZnO film, which is change as function of concentration, temperature and aging time. Hall Effect measurements for ZnO films exhibit n-type conductivity for films deposited with activation energy 0.742eV at high temperature and 0.178eV at low temperature which is different as prepared sample conditions. Also the nanoparticle suspension and nanoparticle film could be implemented as a filter with variable cut off (8.9 × 10¹⁴–1.28 × 10¹⁵) H_Z.     

Enhanced photoluminescence properties of Gd (x-1) Sr x O: CdO nanocores and their study of optical,structural, and morphological characteristics

Synthesis of Gd doped Sr_x O: CdO (x = 1.4, 1.6, 1.8) nanostructures (NS) was achieved through the coprecipitation method by using CTAB (cetyl trimethyl ammonium bromide) with the purpose to investigate the effect of Gd doping on the optical, structural, morphological, and photoluminescence properties at room temperature. Mixed phase of tetragonal crystal structure verified via X-ray diffraction technique, no structural variation was observed except lattice distortion. Size of the crystallites (D), morphology studied by SEM (scanning electron microscopy) analysis, nanoparticles (NPs) crystalized roughly flake-like morphology with homogeneous particle distribution centered at ~ 78 nm, ~56 nm, ~65 nm, ~88 nm for pure and Gd _(x-1) doped Sr _xO: CdO nanostructure, respectively. Fourier transform infrared spectroscopic investigation (FTIR) revealed the presence of Gd–O–Gd, Cd–O, Sr–O, and OH peaks appeared at ~1321 cm ^?1, ~1550 cm ^?1, ~1400 cm ^?1–3300 cm ^?1 with small variation in vibration modes due to Gd doping. Optical absorptivity observed in the range of 325 nm–359 nm (redshifted) with absorption edges at 346 nm, 364 nm, and 380 nm for Gd _(x-1) doped Sr _xO: CdO nanostructure, respectively. This redshift on the bandgap was discussed in terms of new band levels below conduction band. The energy gap was calculated using Kubelka-Munk theory and was found to be in the range of 3.22 eV–2.61 eV. X-ray photoelectron spectroscopy (XPS) performed to determine chemical composition and binding energies of Gd 3d _3/2, Sr 3d _3/2, and Cd 3d _3/2, O1s, and C1s observed at 150.8 eV, 141.6 eV, 411.0 eV, 530.4 eV, and 285.6 eV indicating Gd⁺³ ion replaces Sr⁺² in all concentrations. Our results showed that Gd-doped Sr _xO: CdO nanoparticles exhibited enhanced photoluminescence (PL) properties in contrast to the pure Gd₂O₃ with Gd⁺³ randomly incorporated into crystal structure, probably in tetrahedral sites. The composition of Gd _0.6 doped Sr _x O: CdO NS exhibited photoluminescent emission spectra, peaks centered at 433 ± 3 nm, 449 ± 3 nm, and 469 ± 2 nm (λ _excitation = 318 nm) and for Gd _0.8 doped Sr _x O: CdO nanostructure showed broad emission peak at 412 ± 2 nm to 433 ± 2 nm (λ _excitation = 380 nm), which indicates a reduction in defects with an increase in Gd doping. The transitions can be ascertained with shielding of 4f shells of Gd ⁺³ ions by 6s, 5d shells by the interaction of other Gd ⁺³ ions.     

Approaching compositional limits of perovskite – type oxides and oxynitrides by synthesis of Mg0.25Ca0.65Y0.1Ti(O,N)3, Ca1–xYxZr(O,N)3 (0.1 ≤ x ≤ 0.4), and Sr1–xLaxZr(O,N)3 (0.1 ≤ x ≤ 0.4)

Partial substitution of cations and anions in perovskite-type materials is a powerful way to tune the desired properties. The systematic variation of the cations size, the partial exchange of O²⁻ for N³⁻ and their effect on the size of the optical band gap and the thermal stability was investigated here. The anionic substitution resulted in the formation of the orthorhombic perovskite-type oxynitrides Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃, Ca_1-xY_xZr(O,N)₃, and Sr_1–xLa_xZr(O,N)₃. A two-step synthesis protocol was applied: i) (nano-crystalline) oxide precursors were synthesized by a Pechini method followed by ii) ammonolysis in flowing NH₃ at T = 773 K (Ti) and T = 1273 K (Zr), respectively. High-temperature synthesis of such oxide precursors by solid–state reaction generally resulted in phase separation of the different A-site cations. Changes of the crystal structures were investigated by Rietveld refinements of the powder XRD data, thermal stability by DSC/TG measurements in oxygen atmosphere, oxygen and nitrogen contents by O/N analysis using hot gas extraction technique, and optical band gaps by photoluminescence spectroscopy. By moving from Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃ via Ca_1–xY_xZr(O,N)₃ to Sr_1–xLa_xZr(O,N)₃, the degree of tilting of the octahedral network is reduced, as observed by an increase in the B–X–B angles caused by the simultaneously increasing effective ionic radius of the A-site cation(s). In general, increasing substitution levels on the A-site (Y³⁺ and La³⁺) are accompanied by an enhanced replacement of O²⁻ by N³⁻. In all three systems, this anionic substitution resulted in a reduction of the optical band gap by approximately 1 eV (Ti) and up to 2.1 eV (Zr) compared to the respective oxides. For Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃ an optical band gap of 2.2 eV was observed, appropriate for a solar water splitting photocatalyst. The Zr-based oxynitrides required a by a factor of 2 higher nitrogen contents to significantly reduce the optical band gap and the measured values of 2.9 eV–3.2 eV are larger compared to the Ti-based oxynitride. Bulk thermal stability was revealed up to T = 881 K. In general, the thermal stability decreased with increasing substitution levels due to an increasing deviation from the ideal anionic composition as demonstrated by O/N analysis.     

Enhanced photoelectrochemical performance of Bi2S3/Ag2S/ZnO novel ternary heterostructure nanorods

The current work investigates the morphology, crystallinity and photoelectrochemical (PEC) performance of bismuth sulfide/silver sulfide/zinc oxide nanorods (Bi₂S₃/Ag₂S/ZnO NRAs) photoelectrodes as prepared at different annealing temperature. ZnO NRAs was initially grown hydrothermally, deposited in sequence with Ag₂S and Bi₂S₃ via successive ionic layer adsorption and reaction (SILAR) method before undergoing the annealing treatment. The optimised photoelectrode (Bi₂S₃/Ag₂S/ZnO NRAs-400 °C) possesses an optical bandgap of 1.60 eV extending the absorption edge of ZnO to visible light spectrum. The current-voltage characterization of Bi₂S₃/Ag₂S/ZnO NRAs photoelectrodes revealed that the photocurrent density and photoconversion efficiency were strongly dependent on the annealing temperature. The PEC study shows that the photoelectrode annealed at 400 °C achieved impressive photocurrent density of 12.95 mA/cm² at +0.5 V (vs Ag/AgCl/saturated KCl) under 100 mW/cm² illumination with superior photoconversion efficiency of 12.63%. This improvement is due to the cascade-designed band structure alignment of Bi₂S₃/Ag₂S/ZnO/ITO and to the brilliant role of Ag₂S as an intermediate layer that reduced random chance of electron-hole (e⁻_-h⁺) pairs recombination and improved the electrons collection efficiency. This work is highly anticipated to give contribution on further utilisation of Bi₂S₃/Ag₂S/ZnO NRAs as a promising semiconductor material in PEC related applications.     

Intense white light luminescent Dy3+ doped lithium borate glasses for W-LED: A correlation between physical,thermal, structural and optical properties

In this article the physical, thermal structural and optical properties of Dy³⁺ doped lithium borate glasses have been studied for white LED application. The emission spectra shows two intense emission bands at around 483 nm and 574 nm corresponds to the ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁶H_13/2 transitions along with one feeble band at 663 nm corresponds to ⁴F_9/2 → ⁶H_11/2 transition. The average lifetime <τ> of Dy³⁺ were found to be about 2.95 and 4.94 ns for blue and yellow emission bands respectively. CIE chromaticity diagram shows glass LBD-4 containing 0.5 mol% Dy₂O₃ with colour co-ordinates x = 0.33 and y = 0.37 have highest emission intensity. These glasses having emission in the white region and thus can be used for bright white LED's and modern white LED bulbs.     

The effects of ZnGa2O4 formation on structural and optical properties of ZnO:Ga powders

Gallium-doped zinc oxide (ZnO:Ga 1, 2, 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa₂O₄) with the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa₂O₄ in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga³⁺ at regular octahedral symmetry and its surrounding O²⁻ ions. The amount of ZnGa₂O₄ increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method.     

Fluorene copolymers containing bithiophene/2,5‐ or 2,6‐pyridine units: A study of their optical,electrochemical, and electroluminescence properties

Two alternating copolymers, poly[(2,5‐di(2‐thienyl)‐pyridine‐5,5′‐diyl)‐alt‐(9,9‐dioctylfluorene‐2,7‐diyl)], PFO‐TPy25T, and poly[(2,6‐di(2‐thienyl)‐pyridine‐5,5′‐diyl)‐alt‐(9,9‐dioctylfluorene‐2,7‐diyl)], PFO‐TPy26T, were synthesized by the Pd‐catalyzed Suzuki polymerization method. The pyridine units are present as trimeric monomers in these copolymers and have different connectivities to their two neighboring thiophenes, para‐ and meta‐linkages. We investigated the variations in the optical and electrochemical properties of the copolymers that arise from these different connectivities. The two polymers exhibit 5% weight loss above 410 °C and high glass transition temperatures (T_g: 113 °C for PFO‐TPy25T, 142 °C for PFO‐TPy26T). The UV–vis absorption maximum peaks of PFO‐TPy25T and PFO‐TPy26T in the solid state were found to be 449 and 398 nm respectively, with photoluminescence maximum peaks in the solid state of 573 and 490 nm respectively. Using cyclic voltammetry, we determined their energy band gaps: 3.08 eV for PFO‐TPy25T and 3.49 eV for PFO‐TPy25T. The cyclic voltammetry study of these polymers revealed that there are some differences. The electroluminescence (EL) properties of the copolymers were measured for the device configuration of ITO/PEDOT/polymers/Ca/Al. The device fabricated with the polymer containing 2,5‐pyridine exhibits pale orange emission, whereas the device fabricated with the polymer containing 2,6‐pyridine exhibits pale blue emission. The EL device fabricated with PFO‐TPy25T has a higher brightness (2010 cd/m²) and external quantum efficiency (0.1%) than the PFO‐TPy26T device (260 cd/m², 0.008%), because it has a smaller energy barrier to the injection of charges from PEDOT and Ca into the HOMO and LUMO levels. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 4611–4620, 2006     

Synthesis and characterization of thiophene and fluorene based donor–acceptor conjugated polymer containing 1,3,4-oxadiazole units for light-emitting diodes

A new donor–acceptor (D–A) conjugated polymer (PDTOF) containing 3,4-didodecyloxythiophene, fluorene and 1,3,4-oxadiazole units is synthesized by using Wittig reaction methodology. The synthesized polymer is characterized by ¹H NMR, FTIR, GPC, and elemental analysis. The optical energy band gap of the polymer is found to be 2.42 eV as calculated from the onset absorption edge. The electrochemical studies of PDTOF reveal that, the HOMO and LUMO energy levels of the polymer are ?5.45 eV and ?3.58 eV, respectively. The polymer is thermally stable up to 320 °C. Polymer light-emitting diode devices are fabricated with a configuration of ITO/PEDOT: PSS/PDTOF/Al using PDTOF as the emissive layer. The electroluminescence (EL) spectrum of the device showed green emission with CIE coordinate values (0.34, 0.47). By current density–voltage characteristics, threshold voltage of the PLED device is found to be 6.5 V.     

Structural,thermal, optical and conductivity studies of Co/ZnO nanoparticles doped CMC polymer for solid state battery applications

In this study, a simple chemical precipitation method was used to synthesize ZnO: Co²⁺ as nanoparticles. The solution casting technique was used for the preparation of polymer films of Carboxymethyl cellulose (CMC) doped with different contents (0.5, 1.5, 3, and 5 wt%) of ZnO/Co NPs. As shown by the X-ray diffraction, the average size of ZnO/Co crystallite of the NPs is 25.6 nm. Meanwhile, the addition of ZnO/Co reduced the semi-crystallinity of CMC. The Fourier transform infrared (FTIR) confirmed the interaction between the ZnO/Co NPs and the polymer CMC. The direct and indirect band gap (Eg) was reduced from (5.32–5.01 eV and 5.20 to 4.99 eV respectively) with the increase in ZnO/Co NPs content up to 3 wt% after this content the Eg is increased as shown by the UV–Vis spectra. In addition, the results of TGA displayed the decomposition of the nanocomposite to be little compared to that of the pure CMC indicating the success of fabrication of products. The improvement of the ionic conductivity was noticed upon the addition of ZnO/Co NPs into the polymer CMC system which can be explained in terms of an increase in amorphicity as shown by the impedance spectroscopic study. It was found that the optimum ionic conductivity (3.209 × 10⁻⁶ Scm⁻¹) at ambient temperature was higher for the sample containing 1.5 wt% ZnO/Co NPs with highest of amorphicity and the lowest total loss of weight. Therefore, the improvements in optical properties, thermal stability, and AC conductivity which were observed represent a strong support for the use of the nanocomposite films in the solid state battery applications.