体材料结晶能力的理论预测

引入评价晶体材料缺陷的残缺度及描述晶面表面势场的结晶势两个概念,针对Ni,Cu,Al,Ar单质在不同温度条件下的再结晶过程进行了大量的分子动力学模拟,发现残缺度随结晶势的增大而单调地减小,即结晶势越大则形成单晶体能力越强.由于结晶势能够唯一地确定结晶能力并且其计算简单,因此可从理论上快速方便地预测材料形成单晶体的能力. 关键词： 单晶 结晶 分子动力学 材料设计     

单晶铁金属表面污染物的激光烧蚀机理

激光惯性约束核聚变装置中要求光学元件能够承受极高的激光通量,因此对装置内部洁净度有很高的要求.研究表明装置内部的颗粒污染物主要来源于装置内的机械结构件,杂散光作用下机械结构件表面的损伤将产生颗粒污染物.精密金属构件的激光诱导损伤问题是制约高功率激光装置超洁净制造的重要因素.由于机械结构件表面不可避免地存在污染物,因此本文基于传统的分子动力学能量耦合方式,模拟了激光与表面吸附污染物单晶铁的相互作用过程,探讨了铁材料在激光作用下的烧蚀行为,并分析了激光加载方式和激光能量密度对铁材料烧蚀的作用情况,对比研究了材料表面有无污染物对材料烧蚀的影响情况.研究表明：激光作用下铁材料表面原子在污染物原子的剧烈碰撞下呈现出不同的运动状态;激光能量瞬时加载时更容易烧蚀铁材料;当激光能量密度低于0.0064 J/cm²时,将去除铁材料表面的污染物并不会对铁材料产生烧蚀现象,进一步分析表明铁材料表面吸附污染物时更容易被激光烧蚀.研究结果可为提高高功率激光装置的内部洁净度、实现系统超洁净控制提供理论依据.     

镍基单晶高温合金界面位错网在剪切载荷作用下的演化

运用分子动力学方法,研究了镍基单晶高温合金γ/γ' 相界面错配位错网在剪切载荷作用下的演化特征.结果表明:(100),(110) 和 (111) 三种相界面形成的位错网在载荷作用下有不同形式和不同程度的损伤,其变形和损伤随温度的增加而增加.在相同的剪切载荷和温度作用下,(100) 相界面形成的正方形位错网最稳定. 关键词： 镍基单晶高温合金 界面位错网 分子动力学     

Effect of 100 keV N+ ion irradiation on the organic single crystal of hippuric acid for nonlinear optical applications

The potential organic nonlinear optical material of hippuric acid (HA) single crystal has been grown by the slow evaporation solution growth technique using N, N-dimethylformamide as the solvent. Single crystals of pure HA were irradiated at room temperature with 100 keV Nitrogen (N⁺) ions at fluence 1×10¹⁶ and 5×10¹⁶ ions/cm². The pure and irradiated HA single crystals were characterized by different characterization technique. The photoluminescence and UV–visible absorption were performed at room temperature. The crystalline perfection of the pure and irradiated single crystals has been examined by high-resolution X-ray diffraction. Vickers microhardness technique was used to study the effect on the mechanical strength of the crystal at different ion fluences. The structural changes were analyzed by powder X-ray diffraction analysis. The functional groups of the synthesized compound have been identified by Fourier transform infrared spectroscopy. The dielectric constant and dielectric loss as a function of frequency were analyzed at room temperature.     

原子掺杂对单元材料结晶能力的影响

2009年我们建立了一个凝结势模型用以预测材料形成单晶体的能力,表明单元体材料(Ni,Al,Cu,Ar,Mg)的结晶能力随凝结势的增大而单调增强.本文将凝结势模型应用于二元材料体系,并结合分子动力学模拟研究了6% Al原子掺杂对于Ni单晶材料结晶能力的影响.模拟结果发现,Al元素的掺杂会大大减弱Ni单晶的结晶能力,在此基础上提出了二元材料体系凝结势的定义,表明凝结势模型可广泛应用于预测二元体材料的结晶能力.     

A thermal-mechanical constitutive model for b-HMX single crystal and cohesive interface under dynamic high pressure loading

Due to the significant thermal-mechanical effects during hot spot formation in PBX explosives,a thermodynamic constitutive model has been constructed for HMX anisotropic single crystal subjected to dynamic impact loading. The crystal plasticity model based on dislocation dynamics theory was employed to describe the anisotropic plastic behavior along the preferential slip systems. A modified equation of state (EOS) was introduced into the constitutive equations through the decomposing stress tensor and the n...     

PMN-PT single crystal focusing transducer fabricated using a mechanical dimpling technique

A ∼5 MHz focusing PMN-PT single crystal ultrasound transducer has been fabricated utilizing a mechanical dimpling technique, where the dimpled crystal wafer was used as an active element of the focusing transducer. For the dimpled focusing transducer, the effective electromechanical coupling coefficient was enhanced significantly from 0.42 to 0.56. The dimpled transducer also yields a −6 dB bandwidth of 63.5% which is almost double the bandwidth of the plane transducer. An insertion loss of the dimpled transducer (−18.1 dB) is much lower than that of the plane transducer. Finite element simulation also reveals specific focused beam from concave crystal surface. These promising results show that the dimpling technique can be used to develop high-resolution focusing single crystal transducers.     

Crack growth on the basal plane in single crystal zinc: experiments and computations

Crack propagation on the basal planes in zinc was examined by means of in situ fracture testing of pre-cracked single crystals, with specific attention paid to the fracture mechanism. During quasistatic loading, crack propagation occurred in short bursts of dynamic crack extension followed by periods of arrests, the latter accompanied by plastic deformation and blunting of the crack-tip. In situ observations confirmed nucleation and propagation of microcracks on parallel basal planes and plastic deformation and failure of the linking ligaments. Pre-existing twins in the crack path serve as potent crack arrestors. The crystallographic orientation of the crack growth direction on the basal plane was found to influence both the fracture load as well as the deformation at the crack-tip, producing fracture surfaces of noticeably different appearances. Finite element analysis incorporating crystal plasticity was used to identify dominant slip systems and the stress distribution around the crack-tip in plane stress and plane strain. The computational results are helpful in rationalizing the experimental observations including the mechanism of crack propagation, the orientation dependence of crack-tip plasticity and the fracture surface morphology.     

Thiourea-doped ammonium dihydrogen phosphate: A single crystal neutron diffraction investigation

Thiourea-doped ammonium dihydrogen phosphate (TADP) exhibits nonlinear optical property and the second harmonic generation efficiency of these crystals is three times that of pure ammonium dihydrogen phosphate (ADP) crystal. In this context, the study of structural distortion in the thiourea-doped ADP crystal is significant, hence single neutron diffraction investigations were undertaken. The final R-factors are: R[F ² > 2σ(F ²)] = 0.11, Goodness of fit(S) = 1.15. Though the dopant could not be located from the difference Fourier map, the cell parameters (a = b = 7.531(3) A, c = 7.544(5) Å) were found to be significantly greater than that of pure ADP at RT (a = b = 7.502(1) Å, c = 7.546(1) Å). This indicates that the dopant concentration in the crystals is small but enough to bring changes in the overall average structure.     

Growth,optical, mechanical,dielectric and theoretical properties of picolinium maleate NLO single crystal

Nonlinear optical single crystals of picolinium maleate (PM) were grown by slow evaporation method. The grown crystal was subjected to single crystal X-ray diffraction analysis to confirm that the crystal belongs to the monoclinic crystal structure with space group P2₁/c. The optical transmission range of the grown crystal was measured by UV–Vis–NIR region with the lower cut-off wavelength as 330 nm. The optical bandgap is found to be 3.75 eV. Mechanical strength of the grown crystal was analyzed using Vickers microhardness tester. Dielectric constant and dielectric loss of picolinium maleate are measured in the frequency range from 50 Hz to 5 MHz at different temperatures. Further, electronic properties, such as valence electron plasma energy, Penn gap, Fermi energy and electronic polarizability of the grown crystal have been estimated.     

Molecular dynamics study on the evolution of interfacial dislocation network and mechanical properties of Ni-based single crystal superalloys

The evolution of misfit dislocation network at $\gamma /{\gamma }^{\prime }$ phase interface and tensile mechanical properties of Ni-based single crystal superalloys at various temperatures and strain rates are studied by using molecular dynamics (MD) simulations. From the simulations, it is found that with the increase of loading, the dislocation network effectively inhibits dislocations emitted in the γ matrix cutting into the ${\gamma }^{\prime }$ phase and absorbs the matrix dislocations to strengthen itself which increases the stability of structure. Under the influence of the temperature, the initial mosaic structure of dislocation network gradually becomes irregular, and the initial misfit stress and the elastic modulus slowly decline as temperature increasing. On the other hand, with the increase of the strain rate, it almost has no effect on the elastic modulus and the way of evolution of dislocation network, but contributes to the increases of the yield stress and tensile strength. Moreover, tension–compression asymmetry of Ni-based single crystal superalloys is also presented based on MD simulations.     

A theoretical result on dispersion in a photonic crystal

A theoretical result on the type of dispersion of a photonic crystal is derived by using the fact that the refractive index of the crystal is a periodic function of wavelength whose period is the atomic lattice spacing of the crystal as well as by using Rolle's theorem of differential calculus.     

MEAM势与Tersoff势比较研究——碳化硅熔化与凝固行为

运用分子动力学方法对比模拟研究了碳化硅的体熔化、表面熔化和晶体生长过程.分别采用MEAM 势和Tersoff势两种势函数描述碳化硅.结果表明:体熔化时,两种势函数描述的SiC的原子平均能量、 Lindemann指数和结构有序参数与温度的变化关系相似,但MEAM势对应的体熔点(4250 K)比Tersoff势(4750 K) 的要高.表面熔化时,两种势函数描述的SiC在相同的过热度下熔化速度相近;而在相同的温度条件下,MEAM 作用的SiC表面熔化速度更快.这是由于MEAM势SiC的热力学熔点(3338 K)低于Tersoff势SiC的热力学熔点 (3430 K)的缘故.两种势函数作用的SiC在晶体生长方面差异很大.MEAM势SiC的晶体生长速度与过冷度有关, 过冷度约为400 K时晶体生长速度最快.但Tersoff势SiC晶体却在过冷度为0—1000 K的范围内均不能生长. 综合考虑,MEAM势比Tersoff势能更好地描述碳化硅的熔化和凝固行为.     

大尺寸硅镜超光滑表面加工的面型控制

 使用机械-化学抛光法加工大尺寸单晶硅可获超光滑表面,但很难保证良好的面型。提出通过采用开圆孔并连续注入抛光剂的方法来避免抛光盘中心蜂窝眼的出现,可以保证得到良好的面型。最后实验达到较好的面型精度,PV值0.268λ,rms值0.065λ。     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.     

一个单滑移取向铜单晶体疲劳位错结构的热稳定性研究

利用扫描电镜电子通道衬度(SEM-ECC)技术观察研究了[4 18 41]单滑移取向铜单晶体在不同塑性应变幅下的疲劳饱和位错结构及其在不同温度等时退火条件下的热稳定性. 结果表明, 在退火温度为300 °C时, 疲劳位错结构(如脉络结构、驻留滑移带PSB楼梯结构、PSB胞结构和迷宫结构等)均发生了明显回复. 当退火温度高于500 °C, 上述这些疲劳位错结构基本消失, 均发生了明显的再结晶现象, 并大都伴随有退火孪晶的形成. 分析认为, 再结晶的发生和退火孪晶的出现不仅与退火温度和外加塑性应变幅有关, 还与累积循环塑性应变量有着密切的关系.     

Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

<正>In this paper,we investigate the laser irradiation of ZnO single crystals and its influence on photoluminescence.Our study shows that the photoluminescence of ZnO single crystals strongly depends on surface morphologies.The ultraviolet emissions of laser treated-ZnO under 200 mJ/cm~2 become stronger,whereas for those deteriorated by irradiation above 200 mJ/cm~2,the green emissions centred at 2.53 eV are significantly enhanced with a red-shift to 2.19 eV,probably due to the changes in the charge states of the defects.Enhanced yellow-green emissions are well resolved into four peaks at around 1.98,2.19,2.36,and 2.53 eV due to a shallow irradiation depth.Possible origins are proposed and discussed.     

一元溶剂体系HNBP结晶形貌的理论研究

本文计算了苯、甲苯、氯苯、苯甲醚4种溶剂作用下HNBP的晶面层与溶剂层的相互作用能,并对附着能进行了修正,预测了不同溶剂作用下HNBP的晶体形貌.结果表明加入不同的溶剂后,HNBP晶体的重要晶面与溶剂都呈吸引作用.苯溶剂使晶体形貌呈长形柱体状,纵横比为8.54;甲苯溶剂使晶体形貌呈片状,纵横比为7.38;氯苯溶剂使晶体形貌呈现出长方体状,纵横比为4.53;苯甲醚溶剂使晶体形貌呈菱柱状,纵横比为4.15.     

诊断LiF单晶弹性变形的瞬态X射线衍射

利用瞬态X射线衍射技术对LiF单晶沿晶向[100]方向冲击加载的晶格变形进行了诊断研究。实验在神光Ⅱ装置的球形靶上进行,北四路激光驱动Cu靶获得的类He线作为X射线背光源,第九路为加载光源,对大小为7mm×7mm、厚300μm的受激光加载的LiF单晶衍射,实验获得了LiF单晶晶面(200)压缩和未压缩状态的衍射信号。实验结果表明:LiF单晶在激光沿[100]方向冲击加载下,晶格发生了弹性变形,(200)晶面间距变小,衍射线上移,晶格压缩量为11%;该瞬态X射线衍射技术可用于冲击加载下的微观动态响应特性测量。