Acoustic wave effects on catalysis: design of surfaces with artificially controllable functions for chemical reactions

The effects of surface acoustic wave (SAW) and resonance oscillation (RO) of bulk acoustic waves on the catalysis of metals were studied in an attempt to design a catalyst surface with artificially controllable functions for chemical reactions. In ethanol decomposition on a thin Cu film catalyst deposited on the propagation path of a shear horizontal leaky SAW, the SAW-on increased the activity for ethylene production remarkably but a little for acetaldehyde production. A poled ferroelectric z-cut LiNbO₃ with a thickness extensional mode RO (TERO) and a x-cut LiNbO₃ with a thickness shear mode RO (TSRO) were employed as a substrate, on which a thin Ag film catalyst was deposited. For ethanol decomposition, TERO increased ethylene production activity and the selectivity for ethylene production from 79 to 96%, whereas TSRO caused little activity enhancement for both ethylene and acetaldehyde production. The combination with the results of laser Doppler measurements showed that the activity enhancement and selectivity changes with SAW and RO of the acoustic waves are associated with dynamic large lattice displacement vertical to the surface.     

Surface acoustic wave device properties of (B, Al)N films on 128° Y-X LiNbO3 substrate

A c-axis orientated aluminium nitride (AlN) film on a 128° Y-X lithium niobate (LiNbO₃) surface acoustic wave (SAW) device which exhibit a large electromechanical coupling coefficient (k²) and a high SAW velocity property, is needed for future communication applications. In this study, a c-axis orientated (B, Al)N film (with 2.6 at.% boron) was deposited on a 128° Y-X LiNbO₃ substrate by a co-sputtering system to further boost SAW device properties. The XRD and TEM results show that the (B, Al)N films show highly aligned columns with the c-axis perpendicular to the substrate. The hardness and Young's modulus of (B, Al)N film on 128° Y-X LiNbO₃ substrates are at least 17% and 7% larger than AlN films, respectively. From the SAW device measurement, the operation frequency characteristic of (B, Al)N film on 128° Y-X LiNbO₃ is higher than pure AlN on it. The SAW velocity also increases as (B, Al)N film thickness increases (at fixed IDT wavelength). Furthermore, the k² of (B, Al)N on the IDT/128° Y-X LiNbO₃ SAW device shows a higher value than AlN on it.     

Nonlinear acoustoelectronic interaction in thin superconducting lead films

The effect of high-power surface acoustic waves (SAW) on the superconducting state of Pb films has been studied in different transverse magnetic fields. It was established that a high-intensity sound wave affects the T _c of the film and the character of the superconducting transition, and that the observed changes are the larger, the higher is the SAW intensity. It was found that high-power SAW are capable of inducing vortex depinning in the film and reducing the critical current. Various mechanisms which are responsible for the nature of these effects are discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 1753–1760 (October 1997)     

Principles of X-ray diffractometry of surface acoustic waves

Theoretical fundamentals of modern methods of X-ray diffractometry of surface acoustic waves (SAW) are considered briefly. X-ray diffraction on SAW-modulated crystals under total external reflection conditions and the Bragg conditions for the YZ-cut of the LiNbO₃ crystal is considered. Agreement of theoretical and experimental results makes it possible to use them for SAW diagnostics. Possibilities and limitations of listed methods for determining the SAW field parameters are discussed.     

The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

ZnO film is attractive for high frequency surface acoustic wave device application when it is coupled with diamond. In order to get good performance and reduce insertion loss of the device, it demands the ZnO film possessing high electrical resistivity and piezoelectric coefficient d₃₃. Doping ZnO film with some elements may be a desirable method. In this paper, the ZnO films undoped and doped with Cu, Ni, Co and Fe, respectively (doping concentration is 2.0 at.%) are prepared by magnetron sputtering. The effect of different dopants on the microstructure, piezoelectric coefficient d₃₃, and electrical resistivity of the film are investigated. The results indicate that Cu dopant can enhance the c-axis orientation and piezoelectric coefficient d₃₃, the Cu and Ni dopant can increase electrical resistivity of the ZnO film up to 10⁹ Ω cm. It is promising to fabricate the ZnO films doped with Cu for SAW device applications.     

Transport of magnetic vortices by surface acoustic waves

In a thin film of superconducting Y Ba₂Cu₃O₇ the impact of surface acoustic waves (SAWs) traveling on the piezoelectric substrate is investigated. A pronounced interaction between the ultrasonic waves and the vortex system in the type II superconductor is observed. The occurrence of a SAW-induced dc voltage perpendicular to the sound path is interpreted as dragging of vortices by the piezoacoustic SAW, which acts as a conveyor for the flux quanta. The antisymmetry of this voltage with respect to the magnetic field directly evidences the induced, directed flux motion. This dynamic manipulation of vortices can be seen as an important step towards flux-based electronic devices.     

在C70固体/p-GaAs结构中的甚深深能级

发展了恒温电容瞬态数据处理方法，称新方法为恒温电容瞬态时间积谱(ICTTS).用ICT TS方法测量分析了C₇₀固体/p GaAs异质结的深能级，结果发现在C₇₀固体中存在两个很深的空穴陷阱，H C₁和H₂，它们的能级位置分别为Ev⁺⁰856eV和 Ev+1037eV. 关键词： 70')" href="#">C₇₀ 深能级 恒温电容瞬态     

Propagation of surface acoustic waves in structures incorporating high-temperature superconductors

Analysis of the propagation of surface acoustic waves (SAW) was carried out in piezoelectric-high-temperature superconductor (HTSC) film-dielectric structure near the superconducting transition of the HTSC film. By considering a change in the resistive state of the film, its inhomogeneity in a direction perpendicular to the substrate, and the mechanical load of the piezoelectric, equations describing the temperature dependence of the velocity and attenuation of the SAW were obtained. Our calculations agree with experimental results for LiNbO₃-YBa₂Cu₃O₇ structures if possible inhomogeneities in the film are taken into account.Institute for Automated Control Systems and Radio Electronics, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 38–45, July, 1992.     

Surface and quasi-longitudinal acoustic waves in KTiOAsO4 single crystals

Surface and quasi-longitudinal acoustic wave properties have been investigated in potassium titanyl arsenate (KTiOAsO₄, KTA) single crystals for the first time. Surface acoustic wave (SAW) velocity, electromechanical coupling coefficient and power flow angle characteristics have been obtained in rotated Y-cut of KTA crystals. High SAW electromechanical coupling coefficient (0.4%) is found in Z-cut of KTA crystals. For high-frequency devices it is promising the resonators on quasi-longitudinal acoustic wave in X-cut of KTA crystals with sharp response in interdigital transducer conductance at resonance frequency.     

The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering

This paper describes experimental relationship between surface acoustic wave (SAW) properties of two-port SAW resonators based on polycrystalline aluminum nitride (AlN) thin films grown on Si substrates by using a pulsed reactive magnetron sputtering system and their geometry's parameters. Moreover, the influence of post-deposition heat treatment on SAW properties of AlN thin films was investigated at different annealing temperature (600 °C and 900 °C). The measurement results show the number of the inter-digital transducers (IDT) finger pairs (N), the number of reflectors grating pairs (R) and the IDT center-to-center distance (L) related to insertion loss of SAW resonators. The best result of insertion loss was 15.6 dB for SAW resonators with R = 160 pair, N = 5 pair and L = 750 μm. At the same geometry parameters, the SAW velocity and insertion loss were improved slightly after annealing at 600 °C and were worse for the films annealed at 900 °C by changes in the surface morphology and stress on the film.     

X-ray diffraction analysis of the surface acoustic wave propagation in langatate crystal

X-ray diffraction on a langatate crystal (La₃Ga_5.5Ta_0.5O₁₄, LGT) modulated by a Λ=12 μm Rayleigh surface acoustic wave (SAW) was studied in a double axis X-ray diffractometer scheme at the BESSY synchrotron radiation source. SAW propagation in the crystal causes sinusoidal modulation of the crystal lattice and the appearance of diffraction satellites on the rocking curves, with their number, angular positions, and intensities depending on the wavelength and amplitude of acoustic vibrations of the crystal lattice. Strong absorption of X-ray radiation in LGT enables the observation of the diffraction spectra extinction at certain SAW amplitudes. X-ray diffraction spectra analysis makes it possible to determine SAW amplitudes and wavelengths, to measure the power flow angles, and investigate the diffraction divergence in acoustic beam in LGT.     

Acousto-optic light deflection in an Al2O3 optical waveguide structure

The total deflection of an optical guided wave by a surface acoustic wave (SAW) in a silicon-based SiO₂/AL₂O₃/SiO₂ optical waveguide structure is reported. The SAW is generated by an interdigital transducer with piezoelectric ZnO deposited on top of the optical waveguide structure.     

Effects of Mn‐doping on surface acoustic wave properties of ZnO films

Surface acoustic wave (SAW) filters based on Mn‐doped ZnO films have been fabricated and effects of Mn‐doping on SAW properties are investigated. It is found that the electromechanical coupling coefficient (K²) of Zn_0.913Mn_0.087O films is 0.73 ± 0.02%, which is 73.8% larger than that of undoped ZnO films (0.42 ± 0.02%). Zn_0.913Mn_0.087O film filters also exhibit a lower absolute value of insertion loss (|IL|) of 16.1 dB and larger bandwidth (BW) of 5.9 MHz compared with that of undoped ZnO film filter. However, Zn_0.952Mn_0.048O film filters exhibit a smaller K² of 0.34 ± 0.02%, larger |IL| of 26.9 dB and smaller BW of 3.5 MHz. It is suggested that the SAW properties can be improved by appropriate Mn‐doping and Mn–ZnO/Si multilayer structure with large d₃₃ is promising for wide‐band and low‐loss SAW applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The characteristics of surface acoustic waves on AlN/LiNbO3 substrates

The characteristics of surface-acoustic-wave (SAW) devices on various substrates were measured by a network analyzer in the temperature range from 0 to 80 °C. Based on the structure of IDT/AlN/LiNbO₃, it was revealed that the magnitude of the temperature coefficient of frequency (TCF) of a SAW on a LiNbO₃ substrate was significantly decreased due to the thickness increase of AlN thin film deposited on the LiNbO₃ substrate. The TCF of a SAW on an AlN/LiNbO₃ device was measured to be about -51 ppm/°C at h/λ=0.1, where h is the thickness of the AlN film and λ is the wavelength of the SAW. This indicates that the deposition of an AlN film on a LiNbO₃ substrate could improve the temperature stability, as compared with that of a SAW on a LiNbO₃ substrate (-73 ppm/°C). The SAW device on the ST-X quartz is shown to have a positive TCF as the AlN thin film is deposited on the surface of the ST-X quartz. In addition, the phase velocity (V_p) of the SAW on an AlN/LiNbO₃ substrate was significantly increased by the increase of AlN thickness (h/λ). Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +886-7/525-4199, E-mail: ycc@ee.nsysu.edu.tw     

Study of well adherent DLC film deposited on piezoelectric LiTaO3 substrate

A well adherent diamond-like carbon (DLC) film was deposited on piezoelectric LiTaO₃ substrate using PECVD by inserting SiO₂ interlayer. DLC film was characterized using Raman spectroscopy and AFM. Physical and mechanical properties were measured using XRR, ellipsometry, scratch test and nano-indentation. The DLC film exhibits the characteristics of hydrogenated amorphous carbon and a very smooth surface with a 0.25 nm RMS. Scratch test shows that critical load (L_c) is 18 N, which is good enough for applying DLC film to SAW device. The measured mass density, refractive index, hardness and Young’s modulus of DLC film deposited on LiTaO₃ are comparable to the reported values for hydrogenated amorphous carbon film, irrespective of substrates on which the films were deposited.     

Modulation of the electronic properties of GaAs quantum wells induced by surface acoustic waves

We investigated the modulation of the optical properties of GaAs-based structures by a surface acoustic wave (SAW) by microscopic measurements of reflectance and photoluminescence. We demonstrate that for photon energies away from electronic resonances, the modulation of the optical properties is associated with the strain field of the SAW (elastooptical mechanism). Close to the E₀ resonance, the electrooptical modulation due to the SAW piezoelectric fields becomes important and leads to a spatial modulation of the photoluminescence intensity.     

Exfoliation of metal-organic framework nanosheets using surface acoustic waves

Two-dimensional (2D) metal–organic framework (MOF) nanosheets have recently received extensive attention due to their ultra-thin thickness, large specific surface area, chemical and functional designability. In this study, an unconventional method using surface acoustic wave (SAW) technology is proposed to exfoliate large quantities and uniform layers of 2D MOF-Zn₂(bim)₄ nanosheets in a microfluidic system. We successfully demonstrated that the thickness of 2D MOF is effectively and accurately controlled by optimizing the SAW parameters. The mechanisms for the efficient exfoliation of 2D MOF nanosheets is attributed to both the electric and acoustic fields generated by the SAWs in the liquid. The electric field ionizes the methanol to produce H⁺ ions, which intercalate Zn₂(bim)₄ sheets and weaken the interlayer bonding, and the strong shear force generated by SAWs separates the MOF sheets. A yield of 66% for monolayer MOFs with a maximum size of 3.5 μm is achieved under the combined effect of electric and acoustic fields. This fast, low-energy exfoliation platform has the potential to provide a simple and scalable microfluidic exfoliation method for production of large-area and quantities of 2D MOFs.     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(μW/cm²) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(μW/cm²) in ZnO/Si structures with UV intensity varied until 600 μW/cm².