Summary of ISO/TC 201 standard: XIII,ISO 18114:2003—surface chemical analysis—secondary ion mass spectrometry—determination of relative sensitivity factors from ion‐implanted reference materials

This International Standard specifies a method of determining relative sensitivity factors (RSFs) for secondary ion mass spectrometry (SIMS) from ion‐implanted reference materials. The method is applicable to specimens in which the matrix is of uniform chemical composition, and in which the peak concentration of the implanted species does not exceed one atomic percent. Published in 2006 by John Wiley & Sons, Ltd.     

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometer analysis of the grain boundary segregation/precipitation of boron in steel

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometry (FIB‐TOF‐SIMS) analysis was performed to investigate the grain boundary segregation/precipitation of boron in steel. To overcome the low secondary ion yield from the primary Ga⁺ source and the sensitivity using a high‐resolution Ga‐FIB source, a low energy oxygen ion beam was used prior to the Ga‐FIB‐TOF‐SIMS analysis. As a result, it was found that Ga‐FIB‐TOF‐SIMS is a very powerful tool for mapping boron segregation and/or precipitation in steel with a spatial resolution of ~200 nm. In addition, the results were strongly dependent on the surface composition. Copyright © 2014 John Wiley & Sons, Ltd.     

Matrix‐enhanced secondary ion mass spectrometry: the influence of MALDI matrices on molecular ion yields of thin organic films

In this work the effect in secondary ion mass spectrometry (SIMS) of several frequently used matrix‐assisted laser desorption/ionisation (MALDI) matrices on the secondary ion intensities of low molecular weight (m/z 400–800) organic dyes and a pharmaceutical is tested. Matrix (10^?1 M) and analyte (10^?2 M) solutions were made in methanol. Mixtures with several concentration ratios were prepared from these solutions and spincoated on Si substrates prior to time‐of‐flight (TOF)‐SIMS analysis. In some cases the presence of the MALDI matrices caused a considerable increase in the positive secondary (protonated) molecular ion signals. Enhancements of a factor of 20 and more were recorded. Generally, of the matrices used, 2,5‐dihydroxybenzoic acid and 2,4,6‐trihydroxyacetophenone brought about the highest intensity increases. It was also shown that matrix‐enhanced (ME‐)SIMS is capable of lowering the detection limits for molecule ions. However, the enhancement effect is strongly influenced by the analyte/matrix combination and its concentration ratio. As a result, finding an optimal analyte/matrix mixture can be a very time‐consuming process. Mostly, the presence of the matrices causes changes in the relative ion intensities in the TOF‐S‐SIMS spectra. Compared to the spectra recorded from samples without matrices, only a few additional peaks, such as signals that originate directly from the applied matrix or adduct ions, are observed in the mass spectra. Sometimes molecule ions and some characteristic fragments at high m/z values, that cannot be recorded without matrix, do appear in the spectrum when a matrix is present. In the negative mode no enhancement effect is observed on applying the studied MALDI matrices. The results obtained from samples treated with MALDI matrices are also compared to SIMS results for the same samples after Ag and Au metallisation (MetA‐SIMS). For three of the four tested compounds Au MetA‐SIMS resulted in higher ion yields than ME‐SIMS. For both techniques possible mechanisms that can account for the enhancement effect are proposed. Copyright © 2005 John Wiley & Sons, Ltd.     

Enhanced surface sensitivity in secondary ion mass spectrometric analysis of organic thin films using size‐selected Ar gas‐cluster ion projectiles

A size‐selected argon (Ar) gas‐cluster ion beam (GCIB) was applied to the secondary ion mass spectrometry (SIMS) of a 1,4‐didodecylbenzene (DDB) thin film. The samples were also analyzed by SIMS using an atomic Ar⁺ ion projectile and X‐ray photoelectron spectroscopy (XPS). Compared with those in the atomic‐Ar⁺ SIMS spectrum, the fragment species, including siloxane contaminants present on the sample surface, were enhanced several hundred times in the Ar gas‐cluster SIMS spectrum. XPS spectra during beam irradiation indicate that the Ar GCIB sputters contaminants on the surface more effectively than the atomic Ar⁺ ion beam. These results indicate that a large gas‐cluster projectile can sputter a much shallower volume of organic material than small projectiles, resulting in an extremely surface‐sensitive analysis of organic thin films. Copyright © 2010 John Wiley & Sons, Ltd.     

Quantitative analysis of styrene‐pentafluorostyrene random copolymers by ToF‐SIMS and XPS

Poly(styrene) (PS), poly(2,3,4,5,6‐pentafluorostyrene) (5FPS) and their random copolymers were prepared by bulk radical polymerization. The spin‐cast polymer films of these polymers were analyzed using X‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS). The surface and bulk compositions of these copolymers were found to be same, implying that surface segregation did not occur. The detailed analysis of ToF‐SIMS spectra indicated that the ion fragmentation mechanism is similar for both PS and 5FPS. ToF‐SIMS quantitative analysis using absolute peak intensity showed that the SIMS intensities of positive styrene fragments, particularly C₇H₇⁺, in the copolymers are higher than the intensities expected from a linear combination of PS and 5FPS, while the SIMS intensities of positive pentafluorostyrene fragments are smaller than expected. These results indicated the presence of matrix effects in ion formation process. However, the quantitative approach using relative peak intensity showed that ion intensity ratios are linearly proportional to the copolymer mole ratio when the characteristic ions of PS and 5FPS are selected. This suggests that quantitative analysis is still possible in this copolymer system. Copyright © 2005 John Wiley & Sons, Ltd.     

Time‐of‐flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

Silicon oxynitride has been used as a shallow gate oxide material for microelectronics and its thickness has been reduced over the years to only a few tens of angstroms due to device size scaling. The nitride distribution and density characteristic in the gate oxide thus becomes imperative for the devices. The shallow depth profiling capability using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has huge potential for the nitrogen characterization of the shallow gate oxide film. In this article, both positive and negative spectra of TOF‐SIMS on silicon oxynitride have been extensively studied and it was found that the silicon nitride clusters Si_xN^? (x = 1–4) are able to represent the nitrogen profiles because their ion yields are high enough, especially for the low‐level nitride doping in the oxide, which is formed by the annealing of nitric oxide on SiO₂/Si. The gate oxide thickness measured by the TOF‐SIMS profiling method using ¹⁸O or CsO profile calibration was found to correlate very well with transmission electron microscope measurement. The nitrogen concentration in the gate oxide measured using the TOF‐SIMS method was consistent with the results obtained using the dynamic SIMS method, which is currently applied to relatively thicker oxynitride films. Copyright © 2012 John Wiley & Sons, Ltd.     

Reduction of matrix effects in TOF‐SIMS analysis by metal‐assisted SIMS (MetA‐SIMS)

We investigated reduction of the matrix effect in time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) analysis by the deposition of a small amount of metal on the sample surfaces (metal‐assisted SIMS or MetA‐SIMS). The metal used was silver, and the substrates used were silicon wafers as electroconductive substrates and polypropylene (PP) plates as nonelectroconductive substrates. Irganox 1010 and silicone oil on these substrates were analyzed by TOF‐SIMS before and after silver deposition. Before silver deposition, the secondary ion yields from the substances on the silicon wafer and PP plate were quite different due to the matrix effect from each substrate. After silver deposition, however, both ion yields were enhanced, particularly the sample on the PP plate, and little difference was seen between the two substrates. It was therefore found that the deposition of a small amount of metal on the sample surface is useful for reduction of the matrix effect. By reducing the matrix effect using this technique, it is possible to evaluate from the ion intensities the order of magnitude of the quantities of organic materials on different substrates. In addition, this reduction technique has clear utility for the imaging of organic materials on nonuniform substrates such as metals and polymers. MetA‐SIMS is thus a useful analysis tool for solving problems with real‐world samples. Copyright © 2005 John Wiley & Sons, Ltd.     

Investigation of ionic liquids under Bi‐ion and Bi‐cluster ions bombardment by ToF‐SIMS

A systematic study of five different imidazolium‐based room temperature ionic liquids, 1‐butyl‐3‐methylimidazolium acetate, 1‐butyl‐3‐methylimidazolium nitrate, 1‐butyl‐3‐methylimidazolium iodide, 1‐butyl‐3‐methylimidazolium hexafluorophosphate and 1‐butyl‐3‐methylimidazolium bis(trifluoromethylsulfonyl)imide were carried out by means of time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) in positive and negative ion mode. The compounds were measured under Bi‐ion and Bi‐cluster ions (Bi_2–7⁺, Bi_{3, 5}²⁺) bombardment, and spectral information and general rules for the fragmentation pattern are presented. Evidence for hydrogen bonding, due to high molecular secondary cluster ions, could be found. Hydrogen bonding strength could be estimated by ToF‐SIMS via correlation of the anionic yield enhancement with solvent parameters. Copyright © 2010 John Wiley & Sons, Ltd.     

Quantitative surface analysis of Fe?Ni alloy films by XPS,AES and SIMS

A comparison of quantitative surface analyses of Fe? Ni alloy thin films by various methods has been proposed as a pilot study by the Surface Analysis Working Group of the Consultative Committee for Amount of Substance (CCQM). To test the suitability of Fe? Ni for this purpose, alloy films with different compositions were grown on Si(100) wafers by ion‐beam sputter deposition and the compositions were certified by an isotope dilution method using inductively coupled plasma‐mass spectrometry. The alloy compositions measured with X‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) using sensitivity factors determined from pure Fe and Ni metal films agreed with the certified mean values to better than 2%. The alloy compositions quantified by secondary ion mass spectrometry (SIMS) with a C₆₀ ion source agreed to better than 4% with the certified compositions if one of the alloys was used to establish the relative sensitivity factors (RSFs). These results indicate that the quantification of the Fe? Ni alloy is a good method for a CCQM pilot study because matrix effects and ion‐sputtering effects are small for these analytical methods. Copyright © 2007 John Wiley & Sons, Ltd.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 3. Poly(hydroxyethyl methacrylate) with chemical derivatization

Molecular depth profiling of polymers by secondary ion mass spectrometry (SIMS) has focused on the use of polyatomic primary ions due to their low penetration depth and high damage removal rates in some polymers. This study is the third in a series of systematic characterizations of the effect of polymer chemistry on degradation under polyatomic primary ion bombardment. In this study, time‐of‐flight SIMS (ToF‐SIMS) was used to assess 5 keV SF₅⁺‐induced damage of ～90 nm thick spin‐cast poly(2‐hydroxyethyl methacrylate) (PHEMA) and ～130 nm thick trifluoroacetic anhydride‐derivatized PHEMA (TFAA‐PHEMA) films. The degradation of these polymers under extended SF₅⁺ bombardment (～2 × 10¹⁴ ions cm^?2) was compared to determine the effect of the pendant group chemistry on their degradation. The sputter rate and ion‐induced damage accumulation rate of PHEMA were similar to a poly(n‐alkyl methacrylate) of similar pendant group length, suggesting that the addition of a terminal hydroxyl group to the alkyl pendant group does not markedly change the stability of poly(n‐alkyl methacrylates) under SF₅⁺ bombardment. The sputter rate and ion‐induced damage accumulation rate of TFAA‐PHEMA were much higher than a poly(n‐alkyl methacrylate) of similar pendant group length, suggesting that derivatization of the terminal hydroxyl group can significantly reduce degradation of the polymer under SF₅⁺ bombardment. This result is in good agreement with the literature on the thermal and radiation‐induced degradation of fluorinated poly(alkyl methacrylates), which suggests that the electron‐withdrawing fluorinated pendant group increases the probability of depolymerization. Copyright © 2004 John Wiley & Sons, Ltd.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 1. Effect of main chain and pendant methyl groups

Polyatomic primary ions have been applied recently to the depth profiling of organic materials by secondary ion mass spectrometry (SIMS). Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, but the relationship between polymer chemistry and degradation under polyatomic primary ion bombardment has not been studied systematically. In this study, positive and negative ion time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～100 nm thick spin‐cast poly(methyl methacrylate) (PMMA), poly(methyl acrylate) (PMA) and poly(methacrylic acid) (PMAA), films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. These polymers were compared to determine the effect of the main chain and pendant methyl groups on their degradation under SF₅⁺ bombardment. The sputter rate of PMMA was approximately twice that of PMA or PMAA and the rate of damage accumulation was higher for PMA and PMAA than PMMA, suggesting that the main chain and pendant methyl groups played an important role in the degradation of these polymers under SF₅⁺ bombardment. These results are consistent with the literature on the thermal and radiation‐induced degradation of these polymers, which show that removal of the main chain or pendant methyl groups reduces the rate of depolymerization and increases the rate of intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 2. Poly(n‐alkyl methacrylates)

Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, facilitating their use in the molecular depth profiling of these polymers by secondary ion mass spectrometry (SIMS). This study is the second in a series of systematic characterizations of the effect of polymer chemistry on degradation under polyatomic primary ion bombardment. In this study, time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～90 nm thick spin‐cast poly(methyl methacrylate), poly(n‐butyl methacrylate), poly(n‐octyl methacrylate) and poly(n‐dodecyl methacrylate) films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. The degradation of the poly(n‐alkyl methacrylates) were compared to determine the effect of the length of the alkyl pendant group on their degradation under SF₅⁺ bombardment. The sputter rate and stability of the characteristic secondary ion intensities of these polymers decreased linearly with alkyl pendant group length, suggesting that lengthening the n‐alkyl pendant group resulted in increased loss of the alkyl pendant groups and intra‐ or intermolecular cross‐linking under SF₅⁺ bombardment. These results are partially at variance with the literature on the thermal degradation of these polymers, which suggested that these polymers degrade primarily via depolymerization with minimal intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

Denoising and multivariate analysis of time‐of‐flight SIMS images

Time‐of‐flight SIMS (ToF‐SIMS) imaging offers a modality for simultaneously visualizing the spatial distribution of different surface species. However, the utility of ToF‐SIMS datasets may be limited by their large size, degraded mass resolution and low ion counts per pixel. Through denoising and multivariate image analysis, regions of similar chemistries may be differentiated more readily in ToF‐SIMS image data. Three established denoising algorithms—down‐binning, boxcar and wavelet filtering—were applied to ToF‐SIMS images of different surface geometries and chemistries. The effect of these filters on the performance of principal component analysis (PCA) was evaluated in terms of the capture of important chemical image features in the principal component score images, the quality of the principal component score images and the ability of the principal components to explain the chemistries responsible for the image contrast. All filtering methods were found to improve the performance of PCA for all image datasets studied by improving capture of image features and producing principal component score images of higher quality than the unfiltered ion images. The loadings for filtered and unfiltered PCA models described the regions of chemical contrast by identifying peaks defining the regions of different surface chemistry. Down‐binning the images to increase pixel size and signal was the most effective technique to improve PCA performance. Copyright © 2003 John Wiley & Sons, Ltd.     

Nanodomain analysis with cluster‐SIMS: application to the characterization of macromolecular brush architecture

We present the application of cluster‐SIMS for the analysis of the nanoscopic surface of diblock brush terpolymers (DBTs). This novel SIMS technique differs from conventional SIMS. It uses Au₄₀₀⁴⁺ projectiles at 520 keV and an event‐by‐event bombardment/detection regime for the analysis of co‐localized molecular species. The performance of this SIMS method was tested on ‘bottle brush’ block molecules featuring a vertical aligned backbone structure. We were able to assess the extent of secondary ion emissions from the surface and analyze the degree of ordered alignment for DBTs by the fluorocarbon surface coverage. We demonstrate the feasibility of characterizing the homogeneity of macromolecular films at the nanoscale. Copyright © 2015 John Wiley & Sons, Ltd.     

ZnS nanoparticle decorated ZnO nanowall network: investigation through electron microscopy and secondary ion mass spectrometry

We report on the fabrication of ZnO nanowall networks decorated with ZnS nanostructures on aluminum substrates using simple chemical route. The structural features and elemental constituents of the ZnS/ZnO heterostructure systems have been extensively studied using electron microscopy and energy dispersive X‐ray spectroscopy. The light emission characteristics of the bare and heterostructured systems have been analyzed using room temperature photoluminescence spectroscopy. The decoration of ZnS nanostructures over ZnO nanowalls has been evidenced through secondary ion mass spectrometry (SIMS). The ‘matrix effect’ has been found to be prominent during SIMS analysis of the bare and heterostructured nanowalls indicating the presence of ZnS phase over ZnO surface. ‘MCs⁺‐SIMS’ has been employed to suppress the matrix effect and is found to be potentially effective in making a semi‐quantitative estimation of Zn and O surface–atom concentrations in both systems. The luminescence responses of the ZnS/ZnO heterostructures have been found to be strongly dependent on the extent of ZnS phase over ZnO. The higher luminescence responses in ZnS/ZnO heterostructures fabricated with smaller ZnS nanoparticles have been explained in terms of a mechanism of charge‐carrier transfer from ZnS to ZnO. Copyright © 2014 John Wiley & Sons, Ltd.     

Depth profiling in secondary ion mass spectrometry for ultra‐thin layer with nanometer order thickness by mesa‐structure fabrication

We attempted to make an accurate depth profiling in secondary ion mass spectrometry (SIMS) including backside SIMS for ultra‐thin nanometer order layer. The depth profiles for HfO₂ layers that were 3 and 5 nm thick in a‐Si/HfO₂/Si were measured using quadrupole and magnetic sector type SIMS instruments. The depth profiling for an ultra‐thin layer with a high depth resolution strongly depends on how the crater‐edge and knock‐on effects can be properly reduced. Therefore, it is important to control the analyzing conditions, such as the primary ion energy, the beam focusing size, the incidence angle, the rastered area, and detected area to reduce these effects. The crater‐edge effect was significantly reduced by fabricating the sample into a mesa‐shaped structure using a photolithography technique. The knock‐on effect will be serious when the depth of the layer of interest from the surface is located within the depth of the ion mixing region due to the penetration of the primary ions. Finally, we were able to separately assign the origin of the distortion to the crater‐edge effect and knock‐on effect. Copyright © 2012 John Wiley & Sons, Ltd.     

Comparative studies of MCs+-SIMS and e?-beam SNMS for quantitative analysis of bulk materials and layered structures

For the quantification of heterostructure depth profiles the knowledge of relative sensitivity factors (RSF) and the influence of matrix effects on the measured profiles is necessary. Matrix dependencies of the measured ion intensities have been investigated for sputtered neutral mass spectrometry (SNMS) and MCs⁺-SIMS. The use of Cs as primary ions for SNMS is advantageous compared to Ar because the depth resolution is improved without changing RSFs determined under Ar bombardment. No significant amount of molecules has been found in the SNMS spectra under Cs bombardment. Using MCs⁺-SIMS the RSFs are matrix dependent. An improvement of depth resolution can be achieved by biasing the sample against the primary ion beam for SNMS due to a reduction of the net energy of the primary ions and a resulting more gracing impact angle.     

Hydroxylation of the silica in microfabricated thin layer chromatography plates as probed by time‐of‐flight secondary ion mass spectrometry and diffuse reflectance infrared Fourier transform spectroscopy

Microfabricated silica thin layer chromatography (TLC) plates have previously been prepared on patterned carbon nanotube forests. The high temperatures used in their fabrication reduce the number of hydroxyl groups on their surfaces. Fortunately, silica can be rehydroxylated. In diffuse reflectance infrared Fourier transform spectroscopy (DRIFT), a silanol peak below 3740 cm^?1 indicates a well‐hydroxylated silica surface that is fit for chromatography. Hydroxylations of our materials with HF are so effective that it is not possible to discern the position of this peak. In contrast, this signal is discernable when the plates are treated with NH₄OH. To find a more convenient method for studying the surfaces of TLC plates, time‐of‐flight secondary ion mass spectroscopy (ToF‐SIMS) was considered. ToF‐SIMS is advantageous because multiple microfabricated TLC plates must be scraped to obtain enough silica for one DRIFT analysis, while static SIMS can be performed on very small regions (500 × 500 µm² or less) of individual plates. Ratios of the SiOH⁺ and Si⁺ ToF‐SIMS signals for microfabricated TLC plates correlated well with ~3740 cm^?1 silanol peaks from DRIFT. Thus, SIMS allows direct analysis of all of our treated and untreated plates, including those hydroxylated with HF. The best hydroxylation condition for HF, which was better than any studied for NH₄OH, was around 150 ppm at room temperature. The best hydroxylation condition for NH₄OH was 50 °C for 72 h. ToF‐SIMS versus DRIFT results of commercial TLC plates were also obtained and evaluated. Copyright © 2014 John Wiley & Sons, Ltd.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Surface characterization of pre‐formed alginate fibres incorporated with a protein by a novel entrapment process

A novel physical entrapment process has been explored as an approach to surface incorporation of proteins within pre‐formed alginate fibres under mild conditions. Entrapment of the protein of choice was achieved by exposing the alginate fibres to a Na⁺‐rich NaCl/CaCl₂ mixture solution, which caused the formation of a moderate dissociation layer into which the protein could diffuse. Subsequent addition of a large excess of multi‐valent cations led to the collapse of the surface and entrapment of the protein within the surface. Bovine serum albumin (BSA) was used as a model protein to investigate the effect of process parameters on the entrapment efficiency. Scanning electron microscopy revealed that there was an increase in the surface roughness and a slight increase in the average diameter of the fibres after protein entrapment. The presence of the protein at the surface of alginates after the entrapment process was confirmed by means of confocal laser‐scanning microscopy, X‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS). The ion exchanges at the surface were evident, as detected by XPS and ToF‐SIMS. It was found that under fixed pre‐swelling conditions, the entrapment efficiency increased with increasing treatment time and, particularly, with protein concentration in the exposure solution. Copyright © 2005 John Wiley & Sons, Ltd.