The high‐temperature tribological properties of Si‐DLC films

The tribological properties of Silicon‐containing diamond‐like‐carbon (Si‐DLC) films, deposited by magnetron sputtering Si target in methane/argon atmosphere, were studied in comparison with diamond‐like‐carbon (DLC) films. The DLC films disappeared because of the oxidation in the air at 500 °C, whereas the Si‐DLC films still remained, implying that the addition of Si improved significantly the thermal stability of DLC films. Retarded hydrogen release from DLC film at high temperature and silicon oxide on the surface might have contributed to lower friction coefficient of the Si‐DLC films both after annealing treatment and in situ high‐temperature environment. Copyright © 2012 John Wiley & Sons, Ltd.     

Epitaxy‐like orientation of nanoscale Ag islands grown on air‐oxidized Si(110)‐(5 × 1) surfaces

Growth of Ag islands under ultra‐high vacuum condition on air‐oxidized Si(110)‐(5 × 1) surfaces has been investigated by in situ reflection high energy electron diffraction and ex situ scanning electron microscopy and cross‐sectional transmission electron microscopy. A thin oxide is formed on Si via exposure of the clean Si(110)‐(5 × 1) surface to air. The oxide layer has a short range order. Deposition of Ag at different thicknesses and at different substrate temperatures reveal that the crystalline qualities of the Ag film are almost independent of the thickness of the Ag layer and depend only on the substrate temperature. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher temperatures. For deposition at 550 °C sharp spots in the reflection high energy electron diffraction pattern corresponding to an epitaxial orientation with the underlying Si substrate are observed. The presence of a short range order on the oxidized surface apparently influences the crystallographic orientation of the Ag islands. Copyright © 2011 John Wiley & Sons, Ltd.     

BaCe0.8Ho0.2O3-a陶瓷的性质与应用

Ceramic BaCe0.8Ho0.2O3-α with orthorhombic perovskite structure was prepared by conventional solid state reaction, and its conductivity and ionic transport number were measured by ac impedance spectroscopy and gas concentration cell methods in the temperature range of 600-1000 ℃ in wet hydrogen and wet air, respectively. Using the ceramics as solid electrolyte and porous platinum as electrodes, the hydrogen-air fuel cell was constructed, and the cell performance at temperature from 600-1000 ℃ was examined. The results indicate that the specimen was a pure protonic conductor with the protonic transport number of 1 at temperature from 600-900 ℃ in wet hydrogen, a mixed conductor of proton and electron with the protonic transport number of 0.99 at 1000 ℃. The electronic conduction could be neglected in this case, thus the total conductivity in wet hydrogen was approximately regarded as protonic conductivity. In wet air, the specimen was a mixed conductor of proton, oxide ion and electron hole. The protonic transport numbers were 0.01-0.09, and the oxide-ionic transport numbers were 0.27-0.32. The oxide ionic conductivity was increased with the increase of temperature, but the protonic conductivity displayed a maximum at 900 ℃, due to the combined increase in mobility and depletion of the carriers. The fuel cell could work stably. At 1000 ℃, the maximum short-circuit current density and power output density were 346 mA/cm^2 and 80 mW/cm^2, respectively.     

Study of formation and thermal stability of the Fe/ZnO(000‐1) interface

Formation and thermal stability of the Fe/ZnO(000‐1) interface have been studied by means of X‐ray photoelectron spectroscopy and low energy electron diffraction. The results indicated a pseudo 2D growth mode for iron on ZnO. In addition, it could be shown that under ultra high vacuum conditions deposited Fe⁰ on a ZnO(000‐1) single crystal was partially oxidized by a small fraction of residual ? OH‐groups and ZnO to FeO. A strong temperature dependence of the interface reactivity was found upon annealing at temperatures up to 600 °C. Starting from 200 °C iron was first oxidized to bivalent iron oxide. After complete oxidation of Fe⁰ to Fe²⁺ at 375 °C, Fe²⁺ reacted to Fe³⁺. Above temperatures of 500 °C the deposited metallic iron was completely oxidized to trivalent iron. Further experiments with FeO on ZnO showed the oxidation state and the oxide film thickness of the deposited iron to be mainly dependent on the annealing temperature. Copyright © 2008 John Wiley & Sons, Ltd.     

Oxidation Behaviour of PACVD-(Ti,Al)N Wear Resistance Layers

 Sputtered (Ti,Al)N hard coatings are successfully used for dry high speed cutting. These films show a lower oxidation rate than TiN or TiC coatings. In our work (Ti,Al)N films were deposited on WC-6%Co substrates at a temperature of 490°C by plasma-assisted chemical vapour deposition (PACVD) using a gas mixture of TiCl₄/AlCl₃/N₂/Ar/H₂. Investigation of microstructure, crystalline structure and chemical composition was carried out using SEM, WDXS, TEM, AES and XRD techniques. The chemical composition of the deposited films showed a Al to Ti ratio of 1.33. The film thickness was 5.5 μm. Films showed a fine crystalline size, the metastable fcc crystal structure and a columnar growth. The film surface was under low compressive stress up to several 100 MPa. For (Ti,Al)N/WC-Co compounds the oxidation behaviour up to 1100°C (high temperature range) was studied. Therefore, samples were annealed or rapidly heated in air and under high vacuum condition using the laser shock method. The results show decomposition of the (Ti,Al)N structure to the TiN and the AlN phases at temperature values above 900°C. Heating in air causes growing of a thin aluminum oxide layer at the film surface, which is a barrier for further oxygen diffusion to the alumina-film boundary. Additionally, at temperatures above 900°C oxidation of the WC-6%Co substrate surface was obtained in regions of opened cracks and film delamination.     

Changes in the surface structure of Pd/Ta2O5 by oxygen and CO studied using X‐ray Photoelectron Spectroscopy (XPS)

Behaviors of Pd structures with different thicknesses supported by Ta₂O₅/Ta in the reaction with oxygen and CO were studied by XPS and SEM. For the samples with a Pd thickness of 3 nm, a new low‐binding‐energy component appeared in the Pd 3d level upon O₂ exposure at ～200 °C and was reduced in intensity after a subsequent CO exposure at 150 and 200 °C. The change in the Ta 4f state could also be found upon oxygen and CO exposure, indicating that both Pd and the Ta‐oxide substrate participate in the chemical reactions. For the sample with a higher Pd thickness, a positive shift in the Pd 3d level due to the oxidation of Pd was observed after exposure to O₂ at a higher temperature (280 °C). A subsequent CO exposure at ～150 °C could not reduce Pd‐oxide layers, as confirmed by the unchanged Pd 3d spectra after CO treatment, i.e. Pd‐oxide was not reactive for CO oxidation. Copyright © 2010 John Wiley & Sons, Ltd.     

XPS study of the oxidation of nanosize Ni/Si(100) films

The XPS (X-ray photoelectron spectroscopy) study of nickel oxide nanolayers obtained by magnetron sputtering of the metal and its subsequent oxidation in air at different temperatures (400°C and 1000°C) was performed. Silicon(100) was used as a substrate. Surface of the initial Ni/Si structure was shown to contain not only Ni metal, but also the NiO oxide. Annealing at 400°C results in a complete oxidation of the metal film. At a high-temperature annealing (1000°C), nickel interacts both with oxygen and silicon substrate to form NiSi silicide and a composite Ni-Si-O phase in transition layer. Electronconductivity of NiO films is determined by intercrystallite barriers. Activation energies of film electroconductivity in model gases (O₂, Ar, H₂) were found.     

Relationships between strain,microstructure and oxide growth at the nano‐ and microscale

In the present article, the relationships between oxidation processes, surface strains and the microstructure of duplex stainless steels were investigated. Specimens were oxidized at 500 °C under secondary vacuum for 1 h to form a thin oxide film (thickness in the range of 20–50 nm). Such specimens were considered as the model system for developing novel methods of analysis in understanding the behavior of passive films. The interfacial strain field after oxidation was measured experimentally at the microscale using the point grid method. On the other hand, the chemical composition of the oxide film was determined at the submicroscopic scale by means of local scanning Auger spectroscopy (with a spot diameter of 50 nm). Local variations of the chemical composition of the oxide film were analyzed according to the specimen microstructure and the strain field. Copyright © 2008 John Wiley & Sons, Ltd.     

Thin films of vanadium oxide grown on vanadium metal: oxidation conditions to produce V2O5 films for Li‐intercalation applications and characterisation by XPS,AFM, RBS/NRA

Thin films of vanadium oxide were grown on vanadium metal surfaces (i) in air at ambient conditions, (ii) in 5 mM H₂SO₄ (aq), pH 3, (iii) by thermal oxidation at low oxygen pressure (10^?5 mbar) at temperatures between 350 and 550 °C and (iv) at near‐atmospheric oxygen pressure (750 mbar) at 500 °C. The oxide films were investigated by atomic force microscopy (AFM), X‐ray photoelectron spectroscopy (XPS), X‐Ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). The lithium intercalation properties were studied by cyclic voltammetry (CV). The results show that the oxide films formed in air at room temperature (RT), in acidic aqueous solution, and at low oxygen pressure at elevated temperatures are composed of V₂O₃. In air and in aqueous solution at RT, the oxide films are ultra‐thin and hydroxylated. At 500 °C, nearly atmospheric oxygen pressure is required to form crystalline V₂O₅ films. The oxide films grown at pO₂ = 750 mbar for 5 min are about 260‐nm thick, and consist of a 115‐nm outer layer of crystalline V₂O₅. The inner oxide is mainly composed of VO₂. For all high temperature oxidations, the oxygen diffusion from the oxide film into the metal matrix was considerable. The oxygen saturation of the metal at 450 °C was found, by XPS, to be 27 at.% at the oxide/metal interface. The well‐crystallized V₂O₅ film, formed by oxidation for 5 min at 500 °C and 750 mbar O₂, was shown to have good lithium intercalation properties and is a promising candidate as electrode material in lithium batteries. Copyright © 2005 John Wiley & Sons, Ltd.     

Oxidation Behaviour of A Boron Carbide Based Material in Dry and Wet Oxygen

The oxidation behaviour of a B₄C based material was investigated in a dry atmosphere O₂(20 vol.%)-CO₂(5 vol.%)-He and also in the presence of moisture H₂O (2.3 vol%) as boron oxide is very sensitive to water vapour. The mass changes of samples consisting of a chemical vapour deposit of B₄C on silicon nitride substrates were continuously monitored in the range 500–1000°C during isothermal experiments of 20 h. The stability of boron oxide formed by oxidation of B₄C was also studied in dry and wet atmospheres to explain the kinetic curves. In both atmospheres, oxidation is diffusion controlled at 700 and 800°C and enhanced by water vapour. At 900°C and higher temperatures, boron oxide volatilisation and consumption by reaction with water vapour modifies the properties of the oxide film and the material is no more protected. At 600°C, B₄C oxidation is weak but the process remains diffusion controlled in dry conditions as boron oxide volatilisation is negligible. However, in the presence of water vapour, B₂O₃ consumption rate is significant and mass losses corresponding to this consumption and to the combustion of the excess carbon are observed. This revised version was published online in August 2006 with corrections to the Cover Date.     

High‐temperature oxidation behavior of Ni‐based superalloys with Nb and Y and the interface characteristics of oxidation scales

Ni‐based superalloys with niobium (Nb) or/and yttrium (Y) were prepared by vacuum melting. The oxidation kinetics of these alloys was studied by thermogravimetry at 800 °C for 100 h in static air. Morphology of oxides was studied using SEM, and the composition was analyzed by X‐ray diffraction. Energy‐dispersive X‐ray spectrometer was employed to examine the linear element distribution of the cross section of the oxidation films. Results showed that the oxidation kinetics all followed a parabolic law at different stages. The oxide films were mainly comprised of Cr₂O₃, NiCr₂O₄, Al₂O₃ and TiO₂. All the oxide films exhibited layered structure owing to different oxidation stages. With the addition of Nb or Y, the high‐temperature oxidation resistance of the superalloy was improved significantly and the surface morphology of the oxidation film was ameliorated. The comprehensive effect of Nb and Y was remarkable in improving the high‐temperature oxidation resistance of Ni‐based alloys. Copyright © 2014 John Wiley & Sons, Ltd.     

Ionic Conduction in Ba0.95Ce0.8Ho0.2O3-α

Ba0.95Ce0.8Ho0.2O3-a was prepared by high temperature solid-state reaction. X-ray diffraction （XRD） pattern showed that the material was of a single perovskite-type orthorhombic phase. Using the material as solid electrolyte and porous platinum as electrodes, the measurements of ionic transport number and conductivity of Ba0.95Ce0.8Ho0.2O3-a were performed by gas concentration cell and ac impedance spectroscopy methods in the temperature range of 600---1000 ℃in wet hydrogen, dry and wet air respectively. Ionic conduction of the material was investigated and compared with that of BaCe0.8Ho0.2O3-a. The results indicated that Ba0.95Ce0.8Ho0.2O3-a was a pure protonic conductor with the protonic transport number of 1 during 600---700℃ in wet hydrogen, a mixed conductor of protons and electrons with the protonic transport number of 0.97--0.93 in 800---1000 ℃. But BaCe0.8Ho0.2O3-a was almost a pure protonic conductor with the protonic transport number of 1 in 600---900 ℃ and 0.99 at 1000 ℃ in wet hydrogen. In dry air and in the temperature range of 600---1000 ℃, they were both mixed conductors of oxide ions and electronic holes, and the oxide-ionic transport numbers were 0.24--0.33 and 0.17--0.30 respectively. In wet air and in the temperature range of 600---1000 ℃, they were both mixed conductors of protons, oxide ions and electronic holes, the protonic transport numbers were 0.11--0.00 and 0.09--0.01 respectively, and the oxide-ionic transport numbers were 0.41--0.33 and 0.27--0.30 respectively. Protonic conductivity of Ba0.95Ce0.8Ho0.2O3-a in both wet hydrogen and wet air was higher than that of BaCe0.8Ho0.2O3-a in 600--- 800 ℃, but lower in 900--1000 ℃. Oxide-ionic conductivity of the material was higher than that of BaCe0.8Ho0.2O3-a in both dry air and wet air in 600---1000 ℃.     

Studies of the oxidation of iron by air after being exposed to water vapour using angle‐resolved x‐ray photoelectron spectroscopy and QUASES™

Air oxidation of Fe was compared with and without a pre‐exposure to water vapour. Angle‐resolved x‐ray photoelectron spectroscopy (ARXPS) and QUASES^? were used to determine the thickness of the oxide layer formed and its composition. The extent of oxidation was found to be much less if the surface was pre‐exposed to water rather than air alone. Studies performed using ARXPS were able to show that the hydroxyl‐containing layer located at the surface after Fe was exposed to water vapour was located below the surface after exposure to air. This observation suggested that the oxidation of Fe in air is mediated by cation diffusion. Copyright © 2004 John Wiley & Sons, Ltd.     

Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films

Amorphous hydrogenated carbon-rich silicon–carbon alloy film (a-Si_0.3C_0.7:H) was deposited by reactive dc-magnetron sputtering of silicon target in argon–methane gas mixture. As-deposited film exhibits white photoluminescence at room temperature. After the deposition the samples were thermally annealed in dry Ar, wet Ar, or dry O₂ flow at 450 °C for 30 minutes that resulted in the enhancement of the photoluminescence intensity by a factor of about 5, 8 and 12 respectively. Spectral distribution of light emission was almost unchanged at the annealing in dry and wet argon while the oxidation in pure oxygen resulted in strong enhancement of a “blue” shoulder in the spectrum. EPR measurements at room temperature showed the decrease of spin concentration after thermal treatment in dry and wet argon and no EPR signal was detected after annealing in oxygen. FTIR and XPS measurements evidenced the formation of a-Si:O:C:H composite material after dry oxidation. Based on the measurements of photoluminescence in the temperature range 7–300 K it is suggested that light-emitting efficiency of a-Si_0.3C_0.7:H is determined by migration of the photo-excited carriers to non-radiative recombination centers. The physical mechanisms that can be involved in the strong enhancement of visible photoluminescence in Si:C:O:H layers are discussed.     

High glass transition and thermally stable polynorbornenes containing fluorescent dipyrene moieties via ring‐opening metathesis polymerization

A high‐glass‐transition‐temperature polynorbornene, poly(NBEDPY), containing chromophore groups was synthesized by ring‐opening metathesis polymerization (ROMP) using Grubbs' catalysts; poly(HNBEDPY) was obtained by the reduction of poly(NBEDPY). The glass transition temperatures (T_g) of poly(NBEDPY) and hydrogenated poly(HNBEDPY) were as high as 250 °C and 220 °C, respectively, because of the rigid dipyrene groups, which are higher than those of commercially available ring‐opened hydrogenated polynorbornenes (JSR ARTON®; 120–165 °C). The 10% weight‐loss temperatures of hydrogenated poly(HNBEDPY) and poly(NBEDPY) were up to 450 °C and 400 °C, respectively. A hydrogenated poly (HNBEDPY) film showed excellent transparency (over 91%). The photoluminescence emission spectra of poly(HNBEDPY) showed strong solvent‐polarity dependence, revealing that poly (HNBEDPY) underwent remarkable bathochromic shifts with an increase in solvent polarity. Poly(HNBEDPY) also showed remarkable fluorescent solvatochromism (blue in toluene, greenish yellow in dimethyl sulfoxide). The cyclic voltammogram of poly(HNBEDPY) film cast onto an indium tin oxide (ITO)‐coated glass substrate exhibited one reversible oxidation redox couple at 0.55 V versus Ag/Ag⁺ in acetonitrile solution. The electrochromic characteristics of poly(HNBEDPY) showed reversibility, with a color change from its green neutral form to dark red upon the application of potentials from 0 to 1.0 V. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

The chemistry and thermal stability of HfTaO/Si interface by x‐ray photoelectron spectroscopy

The chemistry and thermal stability of HfTaO/Si interface as a function of annealing temperature have been investigated by x‐ray photoelectron spectroscopy. For the as‐deposited sample, the formation of Hf‐silicate bond is observed on Hf 4f core‐level spectra, which contributes to bulk HfO₂ and SiO₂. Besides, the suboxide of tantalum (Ta⁺¹) is formed at the interface at room temperature because of oxygen‐deficient conditions. HfSi₂, Hf_xSi_yO_4, and HfO₂ coexists in interfacial region at 850 °C, meanwhile, an evidence for transforming from the Ta¹⁺ to tantalum oxide (Ta⁵⁺) is verified. The peaks of Hf–O–Si and Hf–O have disappeared, only one peak of Hf silicide remained after the annealing at 950 °C. A stable SiO₂ phase in HfTaO/Si is formed under different annealing conditions. Copyright © 2011 John Wiley & Sons, Ltd.     

Synthesis and characterization of a novel electrochromic aromatic polyamide from AB‐type triphenylamine‐based monomer

A new triphenylamine‐based polyamide I was prepared by direct polycondensation of AB‐type monomer, 4‐amino‐4′‐carboxy‐4″‐methoxytriphenylamine ( 4 ), in the presence of triphenyl phosphite and pyridine as condensation agents. The obtained polyamide I showed excellent solubility in aprotic polar solvents such as NMP, DMAc, DMF, and DMSO and could be cast into transparent film with weight‐average molecular weight (M_w = 63,400) and polydispersity index (PDI = 1.79). The polyamide I exhibited good thermal stability with relatively high glass‐transition temperature (282 °C), 10% weight‐loss temperature above 470 °C under a nitrogen atmosphere, and char yield at 800 °C in nitrogen higher than 64%. It also showed maximum ultraviolet‐visible absorption at 362 nm and exhibited fluorescence emission maxima at 493 nm in NMP solution with fluorescence quantum yield 4.4%. Cyclic voltammogram of polyamide I film cast onto an indium tin oxide coated glass substrate exhibited one oxidative redox couple at 0.72 V (oxidation onset potential) versus Ag/AgCl in acetonitrile solution and revealed good stability of the electrochromic characteristic with a color change from colorless to green at applied potentials ranging from 0.00 to 1.10 V. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 1988–2001, 2009     

Preparation of porous polyimide/in‐situ reduced graphene oxide composite films for electromagnetic interference shielding

Herein we report an easy and efficient approach to prepare lightweight porous polyimide (PI)/reduced graphene oxide (RGO) composite films. First, porous poly (amic acid) (PAA)/graphene oxide (GO) composite films were prepared via non‐solvent induced phase separation (NIPS) process. Afterwards PAA was converted into PI through thermal imidization and simultaneously GO dispersed in PAA matrix was in situ thermally reduced to RGO. The GO undergoing the same thermal treatment process as thermal imidization was characterized with thermogravimetric analysis, Raman spectra, X‐ray photoelectron spectroscopy and X‐ray diffraction to demonstrate that GO was in situ reduced during thermal imidization process. The resultant porous PI/RGO composite film (500‐µm thickness), which was prepared from pristine PAA/GO composite with 8 wt% GO, exhibited effective electrical conductivity of 0.015 S m^?1 and excellent specific shielding efficiency value of 693 dB cm² g^?1. In addition, the thermal stability of the porous PI/RGO composite films was also dramatically enhanced. Compared with that of porous PI film, the 5% weight loss temperature of the composite film mentioned above was improved from 525°C to 538°C. Moreover, tensile test showed that the composite film mentioned above possessed a tensile strength of 6.97 MPa and Young's modulus of 545 MPa, respectively. Copyright © 2016 John Wiley & Sons, Ltd.     

Ba1.03Ce0.8 Ho0.2O3-α固体电解质的制备和电性能

采用高温固相反应法制备了非化学计量组成的Ba1.03Ce0.8 Ho0.2O3-α 固体电解质,用XRD和SEM对其相组成和表面及断面形貌进行了表征。用气体浓差电池方法测定了材料在600～1000 ℃温度范围内,干燥空气、湿润空气和湿润氢气气氛中的离子迁移数;用交流阻抗谱技术测定了它们在各实验气氛中的电导率。研究了材料的离子导电特性,并与BaCe0.8Ho0.2O3-α 和Ba0.97Ce0.8Ho0.2O3-α 的性能进行了比较。结果表明：该材料为单相钙钛矿型斜方晶结构。在600～1000 ℃温度范围内、干燥空气中,是氧离子与电子空穴的混合导体,氧离子迁移数为0.10～0.36;在湿润空气中,是质子、氧离子与电子空穴的混合导体,质子迁移数为0.11～0.01,氧离子迁移数为0.34～0.30;在湿润氢气气氛中,是纯质子导体,质子迁移数为1。在600～1000 ℃温度范围内,干燥空气、湿润空气和湿润氢气气氛中,非化学计量组成材料(x = 1.03,0.97)的电导率高于化学计量组成材料(x = 1)的电导率,其中,Ba1.03Ce0.8 Ho0.2O3-α的电导率最高 (1000 ℃时、在干燥空气气氛中：3.92×10-2 S·cm-1;在湿润空气气氛中：3.46×10-2 S·cm-1;在湿润氢气气氛中：2.10×10-2 S·cm-1)。Ba1.03Ce0.8 Ho0.2O3-α材料的离子导电性优于BaCe0.8Ho0.2O3-α 和Ba0.97Ce0.8Ho0.2O3-α。     

Thickness and temperature‐dependent study of Co/Si interface

Thin films of cobalt (10, 40, and 100 nm) are deposited on Si substrate by electron beam physical vapor deposition technique. After deposition, 4 pieces from each of the wafers of silicon substrate were cut and annealed at a temperature of 200°C, 300°C, and 400°C for 2 hours each, separately. X‐ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM) are used to study the structural and morphological characteristics of the deposited films. To obtain TEM images, Co films are deposited on Cu grids; so far, no such types of TEM images of Co films are reported. Structural studies confirm nanocrystalline nature with hexagonal close packed structure of the deposited Co film at lower thickness, while at higher thickness, film structure transforms to amorphous with lower surface roughness value. The particle sizes in all the cases are in the range of 3 to 5 nm. Micro‐Raman spectroscopy is also used to study the phase formation and chemical composition as a function of thickness and temperature. The results confirm that the grown films are of good quality and free from any impurity. Studies show the silicide formation at the interface during deposition. The appearance of new band at 1550 cm⁻¹ as a result of annealing indicates the structural transformation from CoSi to CoSi₂, which further enhances at higher annealing temperatures.