Swift heavy ion induced effects at Mo/Si interface and silicide formation

Swift heavy ion (SHI) induced modification at metal/Si interfaces has emerged as an interesting field of research due to its large applications. In this study, we investigate SHI‐induced mixed molybdenum silicide film with ion fluences. The molybdenum thin films were deposited on silicon substrates using e‐beam evaporation at 10^?8 torr vacuum. Thin films were irradiated with Au ions of energy 120 MeV to form molybdenum silicide. The samples were characterized by grazing incidence X‐ray diffraction (GIXRD) technique for the identification of phase formation at the interface. Rutherford backscattering spectrometry (RBS) was used to investigate the elemental distribution in the films. The mixing rate calculations were made and the diffusivity values obtained lead to a transient melt phase formation at the interface according to thermal spike model. Irradiation‐induced effects at surface have been observed and roughness variations at the surface were calculated using atomic force microscopy (AFM) technique. Copyright © 2009 John Wiley & Sons, Ltd.     

Unidirectional Pt silicide nanowires grown on vicinal Si(100)

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.     

Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si (111) sample

The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. Hie results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer     

Growth,characterization and interfacial reaction of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4 substrates

Growth of magnetron sputtered Pt/CeO₂ thin films on Si and Si₃N₄ were characterized by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X‐ray photoelectron spectroscopy (XPS). Interaction of Pt/CeO₂ films with Si on Si and Si₃N₄ substrates was extensively investigated by XPS. XRD studies show that films are oriented preferentially to (200) direction of CeO₂. XPS results show that Pt is mainly present in +2 oxidation state in Pt/CeO₂/Si film, whereas Pt⁴⁺ predominates in Pt/CeO₂/Si₃N₄ film. Concentration of Pt⁴⁺ species is more than four times on Si₃N₄ substrate as compared with that on Si. Ce is present as both +4 and +3 oxidation states in Pt/CeO₂ films deposited on Si and Si₃N₄ substrates, but concentration of Ce³⁺ species is more in Pt/CeO₂/Si film. Interfacial reaction between CeO₂ and Si substrate is controlled in the presence of Pt. Pt/Ce concentration ratio decreases in Pt/CeO₂/Si₃N₄ film upon successive sputtering, whereas this ratio decreases initially and then increases in Pt/CeO₂/Si film. Copyright © 2015 John Wiley & Sons, Ltd.     

DNA immobilization onto electrochemically functionalized Si(100) surfaces

N-type Si(1 0 0) surfaces were modified by reduction of 4-nitrobenzenediazonium through cyclic voltammetry. Contact mode AFM was employed to produce holes in the deposited layers and cross-sectional profiles were obtained to determine their thicknesses. Layer thickness was found to increase with the number of cyclic potential scans in both aqueous and non-aqueous media. In acetonitrile, the single scan thickness was determined to be approximately 15 nm, whereas for three scans the layer thickness was found to be approximately 35 nm. These thicknesses were also measured and confirmed by ellipsometry. Both thicknesses are indicative of multilayer formation on the silicon surface. Layers formed in acetonitrile were more uniform and of better quality (without holes), compared to those prepared in water. This type of functionalized surface, after further cyclic voltammetric reduction of the nitro groups and treatment with glutaraldehyde, was then used to immobilize single strand DNA-C₆H₁₂NH₂ probe sequences for hybridization with complementary DNA sequences. Fluorescein-labeled probe and target oligonucleotide sequences were used to validate the immobilization of the probe layer and hybridization with the complementary sequence. No binding was observed when using a non-complementary sequence as probe.     

LiNi0.3Co0.7O2的结构及其锂电池行为的研究

利用XRD、XPS、CV等方法研究了LiNi_0.3Co_0.7O₂的结构及其锂电池行为。结果表明:LiNi_0.3Co_0.7O₂具有六方晶系空间群结构,其晶胞参数a=0.2826nm,c=1.4130nm;其表面存在Li₂O;Li⁺在其中的化学扩散系数为1～7×10^-8cm²·s^-1;其锂电池在4.30～3.00V间放电容量可达120～140mA·h·g^-1,放电机理为Li⁺在其中进行两步嵌入反应。     

催化褪色光度法测定痕量钴

钴是人体健康不可缺少的微量元素，本文用酸碱指示剂间甲酚紫作为指示物质，催化动力学测定结果显示间甲酚紫在pH：10．0的NH3-NH4Cl缓冲溶液中呈紫色。Co(Ⅱ)对H2O2氧化这种紫色溶液褪色反应有催化作用，从而建立了测定钴的方法。该法可直接用于维生素B12和生物样品及地下水中Co(Ⅱ)含量的测定。     

Nanoscale relaxation in Ru–Si growth on a silicon (111) surface

The formation and growth of Ru–Si islands were observed on a ruthenium‐deposited Si(111) surface during successive cycles of heating for 30 s at 1423 K and cooling. Lateral and vertical growth is analysed. The large lattice mismatch of small Ru2Si3 islands with the Si substrate modulates a Volmer–Weber type growth mode. When the islands are large, Ru2Si3 crystals are situated on a metastable buffer layer. Copyright © 2013 John Wiley & Sons, Ltd.     

Synthesis and Crystal Structure of Trans-diaquabis(hexamethylenetetramine-N)bis(isothiocyanato)cobalt(Ⅱ) trans-tetraaquabis(isothiocyanato)cobalt(Ⅱ) dihydrate

1 INTRODUCTION Supramolecular compounds assembled by coordination covalent bonding or hydrogen bonding are of considerable interest due to their potential applications in developing new materials with magnetic, optical and catalytic properties[1]. One of the synthesis methods used to construct the functional compounds is that octahedral metal ion connects to polydentate ligand such as 4, 4?bipyridine, pyrazine and so on to form multi-dimensional supramolecular polymer[2]. Hmt (hexamethyl…     

Studies on solid state synthesis and the oxygenation property of cobalt (II) Schiff base (vanilline polyamine) complexes

Three new cobalt complexes were synthesized by solid-state reaction at room temperature and the resultant Co complexes reacted with two equivalent oxygen molecules at room temperature to produce the oxygenated complexes [Co·(L₁)₂·(O₂)₂](NO₃)₂·2H₂O (L₁ = N, N’-bis(4-hydroxyl-3-methoxy-benzyl)-diethylenetriamine), [Co·(L₂)₂·(O₂)₂](NO₃)₂·2H₂O (L₂ = N, N’-bis(4-hydroxyl-3-methoxy-benzyl)-triethylenetetramine), and [Co·(L₃)₂·(O₂)₂](NO₃)₂·2H₂O (L₃ = N, N’-bis(4-hydroxyl-3-methoxy-benzyl-tetraethylenepentamine). The oxygenated complexes were characterized by elemental analysis, IR (Infrared), ¹H-NMR (Nuclear Magnetic Resonance), and UV-Vis (Ultraviolet Visual) spectrometry, and TG/DTA (Thermogravimetry/Differential Thermal Analysis) analysis, and molar conductance. The coordinated oxygen contents in the oxygenated complexes were also determined by weight method. It was supposed that only one O₂ molecule coordinated to the Co ion forming a superoxo type oxygenated complex. Translated from Acta Chimica Sinica, 2006, 64(15): 1517–1522 (in Chinese)     

NiPd/Si界面常温扩散及硅化物形成的XPS证据

Nickel-palladium film on p-Si prepared by potential -controlled electrodeposition has much better adherence than that deposited by other methods .To reveal the reasons of this effect, X-ray photoelectron spectroscopy (XPS) combined with Ar+ sputtering was used to investigate the interface of NiPd /Si. The results showed that dramatic interdiffusion of Ni, Pd and Si had occurred at atmospheric temperature. On the XPS spectra of nickel and palladium , there are two kinds of binding energy , contributed by pure metals and metal silicide respectively. NiSi, PdSi and Pd2Si were formed at the interface. Both of the electric field on the surface and the H atoms in the metal lattice have the possibility to promote reactions between nickel or palladium and silicon .     

Radical Polymerization of Vinyl Acetate with Bis(tetramethylheptadionato)cobalt(II): Coexistence of Three Different Mechanisms

Poly(vinyl acetate) by OMRP : Increasing the steric encumbrance of the β‐diketonate R substituents in vinyl acetate (VAc) polymerization mediator [Co{OC(R)CHC(R)O}₂] from Me to tBu sufficiently weakens the Co^III? PVAc bond of the polymer chain to allow it to operate by both associative (degenerative transfer) and dissociative (organometallic radical polymerization, OMRP) mechanisms (see scheme). The Co^III? PVAc species also acts as a transfer agent in the absence of Lewis bases, whereas the Co^II complex shows catalytic chain transfer (CCT) activity.

     

Grown from lithium flux,the ErCo5Si3.17 silicide is a combination of disordered derivatives of the UCo5Si3 and Yb6Co30P19 structure types

A ternary hexaerbium triacontacobalt enneakaidecasilicide, ErCo₅Si_3.17, crystallizes as a combination of disordered variants of the hexagonal UCo₅Si₃ (P6₃/m) and Yb₆Co₃₀P₁₉ (P) structure types and is closely related to the Sc₆Co₃₀Si₁₉ and Ce₆Rh₃₀Si₁₉ types. The Er, Co and three of the Si atoms occupy sites of m.. symmetry and a fourth Si atom occupies a site of .. symmetry. The environment of the Er atom is a 21‐vertex pseudo‐Frank–Kasper polyhedron. Trigonal prismatic coordination is observed for the Si atoms. The Co atoms are enclosed in heavily deformed cuboctahedra and 11‐vertex polyhedra. Crystallochemistry analysis and the data from electronic structure calculations (TB–LMTO–ASA) suggest that the Er atoms form positively charged cations which compensate the negative charge of the [Co₁₂Si₉]^m− polyanions.     

Electronic excited states of Si(100) and organic molecules adsorbed on Si(100)

The electronically excited states of the Si(100) surface and acetylene, benzene, and 9,10-phenanthrenequinone adsorbed on Si(100) are studied with time-dependent density functional theory. The computational cost of these calculations can be reduced through truncation of the single excitation space. This allows larger cluster models of the surface in conjunction with large adsorbates to be studied. On clean Si(100), the low-lying excitations correspond to transitions between the pi orbitals of the silicon-silicon dimers. These excitations are predicted to occur in the range 0.4-2 eV. When organic molecules are adsorbed on the surface, surface --> molecule, molecule --> surface, and electronic excitations localized within the adsorbate are also observed at higher energies. For acetylene and benzene, the remaining pipi* excitations are found to lie at lower energies than in the corresponding gas-phase species. Even though the aromaticity of 9,10-phenanthrenequinone is retained, significant shifts in the pipi* excitations of the aromatic rings are predicted. This is in part due to structural changes that occur upon adsorption.     

Plasma polymerization and deposition of glycidyl methacrylate on Si(100) surface for adhesion improvement with polyimide

Thin polymer films were deposited on Si(100) surfaces by plasma polymerization of glycidyl methacrylate (GMA) under different glow discharge conditions. The FT‐IR, X‐ray photoelectron spectroscopy (XPS), and amine treatment results suggested that the epoxide functional groups of the deposited films had been preserved to various extents, depending on the plasma deposition conditions. The use of a low radio frequency power (～ 5 W) and a relatively high system pressure (100–400 Pa) readily resulted in the deposition of thin films having nearly the same composition of the epoxide functional groups as that of the GMA homopolymer. The plasma‐polymerized GMA (PP‐GMA) thin films deposited on the Ar plasma‐pretreated Si(100) surfaces were retained to a large extent after acetone extraction, suggesting the presence of covalent bonding between the PP‐GMA layer and the Si surface. Thermal imidization of the poly(amic acid) precursor of polyimide on the GMA plasma‐polymerized Si(100) surface resulted in a strongly adhered polyimide film. The adhesion results further suggested that the GMA polymer had been grafted on the Si(100) surface and the epoxide functional groups had undergone reactive interaction (curing) with the carboxylic and amine groups of the poly(amic acid) during thermal imidization. Copyright © 2001 John Wiley & Sons, Ltd.     

Pulse polarographic determination of trace amounts of cobalt (II) by complex formation with calcon

Some aspects of the polarographic reduction of sodium 1-(2-hydroxy-1-naphthylazo)-2-naphthol-4-sulphonate (trivial name: calcon or Eriochrome Blue Black R), as observed when using differential pulse polarography (d.p.p.) and alternating current polarography (a.c.p.), are described, as well as the polarographic behaviour of this compound in the presence of some metal ions. The peak that appears in the d.p.-polarogram due to the reduction of the cobalt (II) complex is the basis of a method for the determination of very small trace amounts of cobalt(II). The proposed procedure is rather selective (Ni(II) interferes, Mn(II) does not) and has a limit of detection of 7 g 1^–1 (minimum amount which can be determined 0.6 g Co(II)).     

Stepwise formation and characterization of covalently linked multiporphyrin-imide architectures on Si(100)

A major challenge in molecular electronics and related fields entails the fabrication of elaborate molecular architectures on electroactive surfaces to yield hybrid molecular/semiconductor systems. A method has been developed for the stepwise synthesis of oligomers of porphyrins linked covalently via imide units. A triallyl-porphyrin bearing an amino group serves as the base unit on Si(100), and the alternating use of a dianhydride (3,3',4,4'-biphenyltetracarboxylic dianhydride) and a porphyrin-diamine for reaction enables the rapid and simple buildup of oligomers composed of 2-5 porphyrins. The properties of these porphyrin "multad" films on Si(100) were interrogated using a variety of techniques. The charge densities of the redox-active porphyrin oligomers were determined via electrochemical methods. The stepwise growth was evaluated in detail via Fourier transform infrared (FTIR) spectroscopy and by selected X-ray photoelectron spectroscopic (XPS) studies. The morphology was probed via AFM methods. Finally, the thickness was evaluated by using a combination of ellipsometry and AFM height profiling, accompanied by selected XPS studies. Collectively, these studies demonstrate that high charge density, ultrathin, multiporphyrin films of relatively well-controlled thickness can be grown in a stepwise fashion using the imide-forming reaction. The increased charge densities afforded by the porphyrin multads may prove important for the fabrication of molecular-based information-storage devices. This bottom-up process for construction of surface-tethered molecular architectures complements the top-down lithographic approach for construction of functional devices with nanoscale dimensions.     

Initial formation of contact layers on Ni/SiC samples studied by XPS

This study deals with the quantitative assessment of the coverage and thickness of Ni silicide films formed during annealing of SiC substrates with sputtered thin films of Ni. The analytical approach involves the use of XPS and depth profiling by means of successive ion etchings and XPS analyses. For either 3 or 6 nm initial Ni film thickness, a 10 nm Ni₂Si product is formed. On top of this product, the C released is accumulated in a very thin (1–2 nm) film. In neither case, the Ni₂Si covers the whole surface, although the coverage is almost complete (～90%) in the latter case. For the greater initial Ni‐film thickness of 17 nm, the thickness of the Ni₂Si product corresponds well to the value of 25 nm expected from the Ni/Ni₂Si stoichiometric relationship. This thickness is significantly greater than a critical level and the film covers the whole surface. Carbon is similarly accumulated in a very thin layer on the top surface, although the major part of C (～70%) is found inside the main reaction product layer. Copyright © 2008 John Wiley & Sons, Ltd.     

Ultrathin chromium oxide films on the W(100) surface

Ultrathin chromium oxide films were prepared on a W(100) surface under ultrahigh-vacuum conditions and investigated in situ by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy electron diffraction. The results show that, at Cr coverage of less than 1 monolayer, CrO2 is formed by oxidizing pre-deposited Cr at 300-320 K in approximately 10(-7) mbar oxygen. However, an increase of temperature causes formation of Cr2O3. At Cr coverage above 1 monolayer, only Cr2O3 is detected.     

Ultrathin films of Ge on the Si(100)2 × 1 surface

The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, low‐energy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to ~1100 K. Therefore, the Ge‐Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge₂ species. This is probably due to a thermal Ge‐Si interdiffusion. In that case, deeper silicon planes participate in the Ge‐Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45^o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.