Structural and electronic properties of La‐doped CaTiO3 crystal

There is experimental and computational evidence that some important properties such as electrical conductivity and ferroelectricity in the CaTiO₃ crystal change according to the dopant states. Using an INDO quantum‐chemical computational method modified for crystal calculations we explore the stability of the La‐doped CaTiO₃ crystal in both phases, cubic and orthorhombic. The calculations are carried out by means of the supercell model based on the LUC (large unit cell) approach as it is implemented into the CLUSTERD computer code. The equilibrium geometry for impurity is found together with the crystalline lattice distortions. Atomic displacements and relaxation energies are analyzed in a comparative manner for the two crystallographic phases. A new effect of electron transfer from the local one‐electron energy level within the band‐gap to the conduction band is observed. © 2002 Wiley Periodicals, Inc. Int J Quantum Chem, 2002     

Influence of Doping Different Rare Earth Ions on the Luminescence of CaTiO3‐based Phosphors

This paper reports the Gd³⁺, Dy³⁺, Tb³⁺ and Lu³⁺ doped CaTiO₃ based phosphors were synthesized by modified solid‐state reaction method and its crystal structure and luminescent properties were investigated. The X‐ray diffraction patterns (XRD) showed that the phosphors sintered at 1000 °C for 2 h were a pure CaTiO₃ phases. The optimization of reaction conditions were carried out by thermal gravimetry and differential thermal analysis methods (DTA/TG). Surface and elemental analyses were performed by using on SEM instrument. The excitation and emission spectras were recorded by photoluminescence spectrophotometer (PL).     

水热法制备长余辉发光材料CaTiO3:Pr,Al及其发光性能

以氯化钙、四氯化钛和Pr6O11为原料,采用水热法结合煅烧制备了掺镨的钛酸钙长余辉发光材料.水热产物进行了XRD、扫描电镜、荧光光谱等表征.研究了水热条件、煅烧条件以及添加Al3+(以Al(NO3)3为原料)对CaTiO3:Pr粉末发光的影响.结果表明:直接水热即可得到具有一定余辉的CaTiO3:Pr发光材料,添加Al3+后长余辉性能显著提高.在200℃水热反应6 h可获得性能最佳的产物,最佳煅烧条件为900℃煅烧1 h.     

Corrosion resistances of passive films on low‐Cr steel and carbon steel in simulated concrete pore solution

The passive ranges of carbon steel rebar and 3Cr steel rebar in saturated Ca(OH)₂‐simulated concrete pore solution with pH 12.6 were determined by means of cyclic voltammetry and potentiodynamic polarization curves. Chronopotentiometry was used to obtain steady‐state conditions for the formation of passive films on rebar samples at different anodic potentials. Electrochemical impedance spectroscopy, Mott–Schottky and X‐ray photoelectron spectrometer curves were employed to compare the formed passive films at different potentials. Additionally, cyclic polarization curves were used to compare the corrosion resistances of formed passive films on the two rebars in saturated Ca(OH)₂‐simulated concrete pore solution with different concentration of Cl^?. The results show that the passive ranges of the two rebars are all between ?0.15 and +0.6 V, and more stable passive films can be formed on both rebars at the anodic potential of +0.3 V. In the absence of Cl^?, the stability and corrosion resistance of the passive film formed on the 3Cr rebar are better than those of CS rebar. The passive film of 3Cr steel has the relatively better pitting corrosion resistance than carbon steel in saturated Ca(OH)₂‐simulated concrete pore solution that contains different concentration of Cl^?. Copyright © 2016 John Wiley & Sons, Ltd.     

Surface (XPS,SIMS) chemical investigation on poly(pyrrole‐3‐acetic acid) films electrosynthesized on Ti and TiAlV substrates for the development of new bioactive substrates

Electropolymerization of pyrrole‐3‐acetic acid was performed by cyclic voltammetry on titanium and Ti90Al6V4 substrates with the aim of developing a multilayer structure for applications in advanced biomaterials. The polymeric films obtained were characterized by both XPS and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS). Information on the poly(pyrrole‐3‐acetic acid) (PPy‐3‐acetic) surface structure was achieved by a detailed XPS analysis of C 1s and N 1s signals. The number of COOH groups was quantified by XPS coupled to a chemical derivatization reaction in which esterification with trifluoroethanol was exploited so that the presence of fluorine (or the CF₃ component in C 1s spectra) could be used as a marker for COOH groups. As a result, it was found that more than 90% of the monomer units along PPy‐3‐acetic chains bear carboxylic functionalities, of which 60% are protonated and 40% are present as carboxylate groups. Some decarboxylation occurs with film ageing. The PPy‐3‐acetic films were also investigated by ToF‐SIMS in the negative ion mode, thus obtaining, for the first time, interesting information on the structure of the top surface layers of a polymer belonging to the polypyrrole family. In particular, clusters of peaks related to PPy‐3‐acetic oligomers were detected and the decarboxylation phenomenon on top of the polymer surface was confirmed. Copyright © 2005 John Wiley & Sons, Ltd.     

CaTiO3:Zn溶胶-凝胶法制备、结构及介电性能

采用溶胶-凝胶法制备了CaTiO3:Zn纳米粒子,透射电镜图显示平均粒径为25 nm.Zn的掺杂位置对于陶瓷相组成和烧结特性有很大影响.Ca1-xZnxTiO3和CaTiO3+zZnO样品的Zn以Zn2TiO4相形式存在;而CaZnyTi1-yO3-δy=0.01)样品中的Zn进入Ti位形成固溶体,无明显的降温效果,当Zn量增至0.05和0.1时,出现ZnO相.ZnO和Zn2TiO4第二相的存在均能明显促进陶瓷烧结.CaTiO3:Zn超细粉体可在较低温度下致密烧结(≤1 250 ℃).1 250℃烧结的CaZnyTi1-yO3-δ(y=0.01)陶瓷具有较好的介电性能:介电常数ε=157,品质因数Q×f=6 819 GHz,谐振频率温度系数(τ)f=7.51×10-4℃-1.     

Passive and transpassive films formed on a nickel alloy in ammoniacal solution

The surface of alloy 625 (Ni‐22Cr‐9Mo) was characterized with XPS and AES depth profiling after exposure to mildly alkaline ammoniacal solution at open circuit and after potentiostatic treatments at various potentials. It was determined that the passive surface film was a Cr and Mo oxide that was depleted in Ni with respect to the bulk alloy. Increased solution temperatures or oxygen concentrations decreased the Ni to Cr ratio in the passive film. The alloy's transpassive film was characterized using SEM and EDX as well as XPS. The transpassive film was heavily depleted in Ni and Cr and consisted mainly of an oxide of Fe. Copyright © 2009 John Wiley & Sons, Ltd.     

Adsorption and orientation kinetics of self‐assembled films of octadecyltrimethoxysilane on aluminium oxide surfaces

X‐ray photoelectron spectroscopy (XPS) and near‐edge x‐ray absorption fine structure (NEXAFS) spectroscopy have been used to study the time‐dependent adsorption and molecular orientation behaviour of octadecyltrimethoxysilane (ODTMS) on native aluminium oxide surfaces. By measuring the adsorption isotherm using XPS, we show that ODTMS molecules exhibit oscillatory adsorption. The oscillatory adsorption behaviour for ODTMS is analogous to that observed for its simpler short‐chain ‘cousin’—propyltrimethoxysilane (PTMS)—and suggests that the length of the functional alkyl chain on an organosilane does not have a significant influence upon the oscillatory adsorption mechanism. The oscillation in the ODTMS adsorption isotherm shows a maximum and a minimum in coverage at an adsorption time of ～30 and ～65 s, respectively, for a 0.75% ODTMS solution in a 90% ethanol–10% water mixture at pH 4. The time‐dependent orientation behaviour of the ODTMS molecules during adsorption was examined using angular‐dependent carbon K‐edge NEXAFS spectroscopy. We show that the alignment of the ODTMS film changes systematically with deposition time and appears to be correlated with coverage measurements obtained using XPS. In particular, by combining the XPS and NEXAFS results we demonstrate that the minimum ODTMS coverage corresponds to a film whose alignment appears to be predominantly randomized. Copyright © 2005 John Wiley & Sons, Ltd.     

Charge referencing issues in XPS of insulators as evidenced in the case of Al‐Si‐N thin films

Accurate charge referencing in XPS of insulating specimens is a delicate issue. This difficulty is illustrated in the case of Al‐Si‐N composite thin films deposited by reactive magnetron sputtering with variable composition from pure aluminum nitride to pure silicon nitride. The samples were mounted with Au‐coated metallic clamps. Argon sputter cleaning was required to remove a surface native oxide before analysis. For charge referencing implanted argon atoms from the sputter gas and a small amount of gold re‐deposited from the metallic clamps onto the specimen surface during sputter cleaning were evaluated. For the argon atoms, a surprisingly large chemical shift (～1 eV) and a significant peak broadening (0.6 eV) of the Ar 2p_3/2 photoelectron line were found with varying the Si content of the films. This could be related to chemical and structural changes of the Al‐Si‐N films. Hence implanted argon could not be used for charge referencing of Al‐Si‐N samples. In contrast to the implanted argon, the Au 4f_7/2 line width of the gold re‐deposited onto the sample surface did not depend on the Si content of Al‐Si‐N films. A constant energy shift (～1.2 eV) of the Au 4f_7/2 line as compared with bulk gold was, however, found, which was related to the size of gold particles formed on the insulating films. Therefore gold could be reliably used to study chemical shifts of sample‐relevant species in Al‐Si‐N films, but the absolute binding energies of Al 2p, Si 2p and N 1s photoelectrons could not be determined. Copyright © 2011 John Wiley & Sons, Ltd.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Effect of N5+ ion implantation on optical and gas sensing properties of WO3 films

In this paper we report the optical and gas sensing behaviours of tungsten oxide (WO₃) films, implanted with 45‐keV N^{5 +} ions of different fluences in the range 1 × 10¹⁵ to 1 × 10¹⁷ cm^–2. The film with fluence 1 × 10¹⁵ cm^–2 shows the most intense PL spectrum with two prominent peaks near UV and blue regions. The morphological changes because of ion implantation are also investigated by atomic force microscopy. Because of implantation the gas sensitivity of the film, in exposure of methane, is found to increase with reasonably fast response and recovery times. With the increase of the concentration of methane, the sensors show better result. Present work also includes the effect of N^{5 +} ion implantation on the structural property of WO₃ films. Copyright © 2015 John Wiley & Sons, Ltd.     

Luminescence properties of Cu‐ion‐implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 × 10¹⁴ ions/cm²) were implanted at room temperature in nondoped and Mg‐doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 nm in CVD‐ZnO and at 450 nm in Mg‐doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low‐concentration region of CVD‐ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 × 10¹⁹ ions/cm³ in CVD‐ZnO and 5.6 × 10¹⁸ ions/cm³ in MZO thin films. Copyright © 2005 John Wiley & Sons, Ltd.     

The layer‐by‐layer stoichiometry of La0.7Sr0.3MnO3/SrTiO3 thin films and interfaces

By using a combination of synchrotron photoemission and a finite element model, the layer‐by‐layer stoichiometry of pulsed laser deposited La_0.7Sr_0.3MnO₃ (LSMO) thin films is extracted. For 3‐ and 5‐unit‐cell films, the LSMO stoichiometry at the LSMO/SrTiO₃ interface has been studied, and it is found that the Sr surface segregation is reversed at the lower interface such that it becomes La rich and Sr depleted. Mn is depleted throughout the entire layer, consistent with reports of a magnetically ‘dead’ layer and the formation of a Ruddlesden–Popper phase. The depth‐averaged Mn concentration is less than 50% of the expected value, suggesting that interface mixing or segregation into the bulk is important, whereas the depth‐averaged La and Sr concentrations are close to the expected values. Copyright © 2013 John Wiley & Sons, Ltd.     

Preparation and characterization of organic–inorganic hybrids and coating films from 3‐methacryloxypropylpolysilsesquioxane

3‐Methacryloxypropylpolysilsesquioxane (MA‐PS) was prepared by acid‐ or base‐catalyzed hydrolytic polycondensation of 3‐methacryloxypropyltrimethoxysilane (MAS). MA‐PS coating film was prepared by dip‐coating on organic, metal and inorganic substrates, including poly(ethylene terephthalate), aluminum, stainless steel, and glass. The coating films on poly(ethylene terephthalate) and glass showed high adhesive strength. The hardness of coating films increased with increasing heat treatment temperature, whereas they decreased with increasing H₂O/MAS molar ratio. The refractive index of coating films increased with increasing heat treatment temperature. In addition, flat and transparent free‐standing films (0.24–0.27 mm thickness) were prepared from MA‐PS that were crack‐free after heat treatment at 1000 °C. Copyright © 2001 John Wiley & Sons, Ltd.     

Changes in the surface morphology induced by 1.0‐MeV Au ion bombardment of Ti and Ti‐6Al‐4V

The effects of surface sputtering by 1.0‐MeV Au ion implantation in commercially pure Ti and its alloy Ti‐6Al‐4V have been studied. These materials are associated with applications in orthopaedic implants. There are few studies that try to explain the ion implantation process of Au in these materials when considering the effects generated on the surface by sputtering, especially at energies of the order of MeV. Discs of these materials were mirror polished and then implanted with 1.0‐MeV Au ions for 4.7 × 10¹⁷ ions/cm² at 45° incident angle with respect to the surface. Part of the eroded material was deposited simultaneously on glass slides to determine their spatial distribution. These discs and the slides were analysed by Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM), optical microscopy and atomic force microscopy. The implanted materials show the initial production of surface ripples that evolve into banded structures. Copyright © 2014 John Wiley & Sons, Ltd.     

Electrosyntheses of high‐quality freestanding poly(fluorene‐co‐3‐methylthiophene) films with tunable fluorescence properties

The copolymerization of 3‐methylthiophene (MeT) and fluorene (FE) was successfully achieved in boron trifluoride diethyl etherate by the direct anodic oxidation of the monomer mixtures on a platinum electrode. The optimal feed ratio together with the best suitable potential for their copolymerization was determined. The as‐formed copolymer films, which were copolymerized with a feed ratio of FE/MeT = 2:1 at a constant potential of 1.3 V (vs a saturated calomel electrode), had the advantages of both poly(3‐methylthiophene) and polyfluorene, such as good electrochemical behavior, high conductivity, excellent thermal stability, and high film quality. The structure of the copolymer was investigated with ultraviolet–visible, infrared spectroscopy, and thermal analysis. Fluorescence spectroscopy studies revealed that the dedoped copolymer film in the solid state was a good blue‐light emitter with a strong emission at 435 nm and a shoulder at 459 nm. The emitting properties of the copolymer could be tuned by parameters during the electrochemical polymerization, such as the applied potential and monomer feed ratio. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 4904–4915, 2006     

Characterisation and properties of magnetron sputtered nanoscale bi‐layered Ni/Ti thin films and effect of annealing

Single‐bi‐layer of Ni–Ti thin film was deposited using DC and RF magnetron sputtering technique by layer‐wise deposition of Ni and Ti on Si(100) substrate in the order of Ni as the bottom layer and Ti as the top layer. The deposition of these amorphous as‐deposited thin films was followed by annealing at 300 °C, 400 °C, 500 °C, and 600 °C temperature with 1‐h annealing time for each to achieve crystalline thin films. This paper describes the fabrication processes and the novel characterization techniques of the as‐deposited as well as the annealed thin films. Microstructures were analysed using FESEM and HRTEM. Nano‐indentation and AFM were carried out to characterize the mechanical properties and surface profiles of the films. It was found that, for the annealing temperatures of 300 °C to 600 °C, the increase in annealing temperature resulted in gradual increase in atomic‐cluster coarsening with improved ad‐atom mobility. Phase analyses, performed by GIXRD, showed the development of silicide phases and intermetallic compounds. Cross‐sectional micrographs exhibited the inter‐diffusion between the two‐layer constituents, especially at higher temperatures, which resulted either in amorphization or in crystallization after annealing at temperatures above 400 °C. Copyright © 2015 John Wiley & Sons, Ltd.     

Preparation of Ba(Ti,Sn)O<Subscript>3</Subscript> thin films by PVP-assisted sol–gel method and their dielectric properties

Ba(Ti_1−x Sn _x )O₃ (x = 0.10 or 0.15) thin films were deposited on Si(100) and Pt(111)/TiO _x /SiO₂/Si(100) substrates via sol–gel spin-coating. Crack-free thin films could be obtained by single-step deposition, where the thickness was about 0.46 and 0.29 μm at 1000 and 2000 rpm, respectively. Circular delaminated parts 100 μm in diameter, however, tended to appear in thicker films deposited at 1000 rpm. On both kinds of substrates, the films were crystallized between 500 and 600 °C, where the perovskite phase emerged as the primary phase, and the formation of single-phase perovskite was basically achieved between 700–800 °C. The films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates, however, tended to have small SnO₂ and BaCO₃ diffraction peaks, which decreased with increasing spinning rate. The dielectric properties were evaluated on the films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates at 2000 rpm. The films prepared by single-step depositions had dielectric constants of 350 and 230, and dielectric loss of 0.30 and 0.10 at x = 0.1 and 0.15, respectively. The films prepared by two time deposition had dielectric constants of 450 and 250, and dielectric loss of 0.21 and 0.19 at x = 0.10 and 0.15, respectively.     

Voltammetric Determination of 3‐Nitrofluoranthene and 3‐Aminofluoranthene at Boron Doped Diamond Thin‐Film Electrode

The voltammetric behavior of 3‐nitrofluoranthene and 3‐aminofluoranthene was investigated in mixed methanol‐water solutions by differential pulse voltammetry (DPV) at boron doped diamond thin‐film electrode (BDDE). Optimum conditions have been found for determination of 3‐nitrofluoranthene in the concentration range of 2×10^?8–1×10^?6 mol L^?1, and for determination 3‐aminofluorathnene in the concentration range of 2×10^?7–1×10^?5 mol L^?1, respectively. Limits of determination were 3×10^?8 mol L^?1 (3‐nitrofluoranthene) and 2×10^?7 mol L^?1 (3‐aminofluoranthene).     

The influence of Cu on the electrochemical behaviour of 304 stainless steel in 0.1M H3PO4 solution

The effect of different Cu addition on the electrochemical and passivation behaviour of the 304 series stainless steel in 0.1 M phosphoric acid solution was evaluated by the potentiodynamic measurements and electrochemical impedance spectrum (EIS). The effect of Cu on chemical composition of the passive film formed in the solution was also studied by X‐ray photoelectron spectroscopy (XPS). The results indicated that Cu did not appreciably improve the corrosion resistance of the passive film, but enhanced the passivation, lowered the critical and passive current density. The passive and critical current density decreased with Cu content increased. The presence of Cu in the passive film affects passive film stability. Cu can modify the proportion of Cr element in the passive film, and also change the components of Fe in the passive film. Copyright © 2012 John Wiley & Sons, Ltd.