Nitride Spinel: An Ultraincompressible High‐Pressure Form of BeP2N4

Owing to its outstanding elastic properties, the nitride spinel γ‐Si₃N₄ is of considered interest for materials scientists and chemists. DFT calculations suggest that Si₃N₄‐analog beryllium phosphorus nitride BeP₂N₄ adopts the spinel structure at elevated pressures as well and shows outstanding elastic properties. Herein, we investigate phenakite‐type BeP₂N₄ by single‐crystal synchrotron X‐ray diffraction and report the phase transition into the spinel‐type phase at 47 GPa and 1800 K in a laser‐heated diamond anvil cell. The structure of spinel‐type BeP₂N₄ was refined from pressure‐dependent in situ synchrotron powder X‐ray diffraction measurements down to ambient pressure, which proves spinel‐type BeP₂N₄ a quenchable and metastable phase at ambient conditions. Its isothermal bulk modulus was determined to 325(8) GPa from equation of state, which indicates that spinel‐type BeP₂N₄ is an ultraincompressible material.     

Phenakite‐Type BeP2N4—A Possible Precursor for a New Hard Spinel‐Type Material

BeP₂N₄ was synthesized in a multi‐anvil apparatus starting from Be₃N₂ and P₃N₅ at 5 GPa and 1500 °C. The compound crystallizes in the phenakite structure type (space group R$\bar 3$ , no. 148) with a=1269.45(2) pm, c=834.86(2) pm, V=1165.13(4)×10⁶ pm³ and Z=18. As isostructural and isovalence‐electronic α‐Si₃N₄ transforms into β‐Si₃N₄ at high pressure and temperature, we studied the phase transition of BeP₂N₄ into the spinel structure type by using density functional theory calculations. The predicted transition pressure of 24 GPa is within the reach of today’s state of the art high‐pressure experimental setups. Calculations of inverse spinel‐type BeP₂N₄ revealed this polymorph to be always higher in enthalpy than either phenakite‐type or spinel‐type BeP₂N₄. The predicted bulk modulus of spinel‐type BeP₂N₄ is in the range of corundum and γ‐Si₃N₄ and about 40 GPa higher than that of phenakite‐type BeP₂N₄. This finding implies an increase in hardness in analogy to that occurring for the β‐ to γ‐Si₃N₄ transition. In hypothetical spinel‐type BeP₂N₄ the coordination number of phosphorus is increased from 4 to 6. So far only coordination numbers up to 5 have been experimentally realized (γ‐P₃N₅), though a sixfold coordination for P has been predicted for hypothetic δ‐P₃N₅. We believe, our findings provide a strong incentive for further high‐pressure experiments in the quest for novel hard materials with yet unprecedented structural motives.     

Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si₃N₄ and Si₂N₂O are formed as the nitridation products in the samples. Fibroid and short columnar Si₃N₄ are detected in the samples. The formation mechanisms of Si₃N₄ and Si₂N₂O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O₂ in N₂ atmosphere, forming a thin film of SiO₂ on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO₂ film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO₂ film will crack, and N₂ is infiltrated into the central section of the sample through cracks, generating Si₂N₂O and short columnar Si₃N₄ in situ. At the same time, metastable SiO(g) reacts with N₂ and form fibroid Si₃N₄. In the regions where the oxygen partial pressure is high, Si₃N₄ is oxidized into Si₂N₂O.     

Chemical Vapor Deposition of Silicon Carbide and Silicon Nitride—Chemistry's Contribution to Modern Silicon Ceramics

Pure silicon carbide and silicon nitride have valuable properties in bulk pore-free form; however, their industrial exploitation has hardly been possible so far. Neither compound can be melted or sintered in pure form; hot pressing or sintering at normal pressure requires the presence of additives; and the reaction-sintering process in which only Si and C or Si and N are employed as additives affords porous materials.–The novel process of chemical vapor deposition has partly overcome the drawbacks of the previous methods. In the new process SiC is produced, e.g., by pyrolysis of CH₃SiCl₃, and Si₃N₄ by reaction of SiCl₄ with NH₃. This technique can also be used for pore filling in objects made of SiC and Si₃N₄ (gas phase impregnation) and for producing extremely fine SiC and Si₃N₄ (gas phase impregnation) and for producing extremely fine SiC and Si₃N₄ powder and SiC monofilaments suitable as components for SiC composites. Moreover, gas phase impregnation can also give fiber composites.     

Ce16Si15O6N32—An Oxonitridosilicate with Silicon Octahedrally Coordinated by Nitrogen

A rarity in solid‐state chemistry is octahedrally coordinated silicon. Ce₁₆Si₁₅O₆N₃₂ is the first nitridosilicate with this structural motif. Most oxosilicates containing octahedrally coordinated silicon are high‐pressure phases. In contrast to that Ce₁₆Si₁₅O₆N₃₂ has been synthesized under ambient pressure. An SiN₆ octahedron that is surrounded by two parallel rings formed from six Si(O,N)₄ tetrahedra is depicted.     

Neutral Pentacoordinate Silicon(IV) Complexes with a Tridentate Dianionic O,N,O or N,N,O Ligand,an Anionic PhX Ligand (X = O,S, Se), and a Phenyl Group: Synthesis and Structural Characterization in the Solid State and in Solution

A series of neutral pentacoordinate silicon(IV) complexes with a SiO₃NC, SiO₂SNC, SiO₂SeNC, SiO₂N₂C, SiOSN₂C, or SiOSeN₂C skeleton was synthesized and structurally characterized by multinuclear NMR spectroscopy in the solid state and in solution and by single‐crystal X‐ray diffraction. The compounds studied contain a tridentate dianionic O,N,O or N,N,O ligand, an anionic PhX ligand (X = O, S, Se), and a phenyl group. The structures, NMR spectroscopic parameters, and chemical properties of these silicon(IV) complexes were compared with those of related compounds that contain a tridentate dianionic S,N,O ligand instead of the O,N,O or N,N,O ligand.     

Nitride Spinel: An Ultraincompressible High-Pressure Form of BeP2N4

Owing to its outstanding elastic properties, the nitride spinel γ-Si₃N₄ is of considered interest for materials scientists and chemists. DFT calculations suggest that Si₃N₄-analog beryllium phosphorus nitride BeP₂N₄ adopts the spinel structure at elevated pressures as well and shows outstanding elastic properties. Herein, we investigate phenakite-type BeP₂N₄ by single-crystal synchrotron X-ray diffraction and report the phase transition into the spinel-type phase at 47 GPa and 1800 K in a laser-heated diamond anvil cell. The structure of spinel-type BeP₂N₄ was refined from pressure-dependent in situ synchrotron powder X-ray diffraction measurements down to ambient pressure, which proves spinel-type BeP₂N₄ a quenchable and metastable phase at ambient conditions. Its isothermal bulk modulus was determined to 325(8) GPa from equation of state, which indicates that spinel-type BeP₂N₄ is an ultraincompressible material.     

Preparation and Crystal Structure of Ni16Si9Al

The new ternary phase Ni₁₆Si₉Al was synthesized from the elements. The compound is formed in a presumably peritectoid reaction at 786 °C and has a narrow homogeneity range around the nominal composition. It adopts an orthorhombic structure (space group Cmcm) related to Ni₃Si₂. It was found, that one particular position is occupied by aluminum together with silicon causing slight splitting and thus leading to a local symmetry break in the structure. Both, Ni₁₆Si₉Al and Ni₃Si₂, show related structural motifs and can be described by a combination of flat layers and puckered slabs with interatomic distances indicating covalent interactions between the atoms.     

Struktur und Eigenschaften von Ba2Mg3Si4, einer Zintl-Phase mit planaren Si6-Einheiten

Structure and Properties of Ba₂Mg₃Si₄, a Zintl Phase with Planar Si₆ Units Within the scope of the investigations on the phase system Ba/Mg/Si a new ternary Zintl phase of the composition Ba₂Mg₃Si₄ was found and structurally characterized. The silicon substructure is built up of Si₂ pairs and a new type of Zintl anion, a planar Si₆ chain. Temperature dependent measurements of the electric conductivity and the magnetic susceptibility show a metallic behavior. Accompanying quantumchemical investigations on the base of the LMTO-ASA method confirm these results and allow an insight in the present bond situation.     

Stishovite's Relative: A Post‐Coesite Form of Phosphorus Oxonitride

Phosphorus oxonitride (PON) is isoelectronic with SiO₂ and may exhibit a similar broad spectrum of intriguing properties as silica. However, PON has only been sparsely investigated under high‐pressure conditions and there has been no evidence on a PON polymorph with a coordination number of P greater than 4. Herein, we report a post‐coesite (pc) PON polymorph exhibiting a stishovite‐related structure with P in a (5+1) coordination. The pc‐PON was synthesized using the multianvil technique and characterized by powder X‐ray diffraction, solid‐state NMR spectroscopy, TEM measurements and in situ synchrotron X‐ray diffraction in diamond anvil cells. The structure model was verified by single‐crystal X‐ray diffraction at 1.8 GPa and the isothermal bulk modulus of pc‐PON was determined to K₀=163(2) GPa. Moreover, an orthorhombic PON polymorph (o‐PON) was observed under high‐pressure conditions and corroborated as the stable modification at pressures above 17 GPa by DFT calculations.     

Synthesis and Structural Characterization of Novel Neutral Higher‐Coordinate Silicon(IV) Complexes with SiON3C and SiON4C Skeletons

The neutral pentacoordinate silicon(IV) complex 10 (SiON₃C skeleton) and the neutral hexacoordinate silicon(IV) complex 11 (SiON₄C skeleton) were synthesized, starting from methyldi(thiocyanato‐N)silane ( 7 ). In addition to their monodentate thiocyanato‐N and methyl ligands, these compounds contain a tridentate dianionic O,N,N ligand ( 10 ) or a tridentate monoanionic O,N,N ligand ( 11 ). Compounds 10 and 11 were characterized by single‐crystal X‐ray diffraction and solid‐state and solution NMR spectroscopy. According to these studies, compounds 10 and 11 exist in solution as well.     

Eight‐ and Twelve‐membered Cyclosilazoxanes: Structural Investigation of Two N‐Pentafluorophenyl‐substituted Si4N3O and Si6N2O4 Rings

The molecular structures of two N‐pentafluorophenylcyclosilazoxanes have been investigated. X‐Ray crystal structure determinations of (C₆F₅)₃Me₈Si₄N₃O ( 2 ) and (C₆F₅)₂Me₁₂Si₆N₂O₄ ( 3 ) revealed the first structurally authenticated examples of eight‐membered Si₄N₃O and twelve‐membered Si₆N₂O₄ ring systems.     

Synthesis,Crystal and Electronic Structure of the Nitridoaluminosilicate Ca5[Si2Al2N8]

Ca₅[Si₂Al₂N₈] was synthesized from elementary aluminum and silicon with phase‐pure tricalcium dinitride at 1280 K under dry argon in a sealed niobium ampoule. Ca₃N₂ was freshly prepared from distilled calcium metal in a dry nitrogen atmosphere. The compound crystallizes in form of transparent yellow distorted octahedra. In air and under moisture Ca₅[Si₂Al₂N₈] undergoes hydrolysis. The structure was determined from a single crystal to be orthorhombic (space group Pbcn – no. 60, a = 925.5, b = 614.0 and c = 1557.8 pm). The nitridoaluminate and ‐silicate substructures are separated into planes of edge and corner‐shared aluminate tetrahedra, which are linked by edge‐sharing double tetrahedral pillars of the silicate. The structure was confirmed by electrostatic and quantum mechanical analysis.     

Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP2N4NH

Non‐metal nitrides such as BN, Si₃N₄, and P₃N₅ meet numerous demands on high‐performance materials, and their high‐pressure polymorphs exhibit outstanding mechanical properties. Herein, we present the silicon phosphorus nitride imide SiP₂N₄NH featuring sixfold coordinated Si. Using the multi‐anvil technique, SiP₂N₄NH was obtained by high‐pressure high‐temperature synthesis at 8 GPa and 1100 °C with in situ formed HCl acting as a mineralizer. Its structure was elucidated by a combination of single‐crystal X‐ray diffraction and solid‐state NMR measurements. Moreover, SiP₂N₄NH was characterized by energy‐dispersive X‐ray spectroscopy and (temperature‐dependent) powder X‐ray diffraction. The highly condensed Si/P/N framework features PN₄ tetrahedra as well as the rare motif of SiN₆ octahedra, and is discussed in the context of ambient‐pressure motifs competing with close‐packing of nitride anions, representing a missing link in the high‐pressure chemistry of non‐metal nitrides.     

Fabrication of SiC and Si3N4 Whiskers under Pressurized Ar and N2 Atmosphere through High‐Energy Ball Milling

SiO_{2 (activated or mesoporous silica)}/Mg_{(magnesiothermic or metal sintering aid)}/C_{(activated or polymeric carbon)}/N_{2 (atmosphere)} systems were used in the one‐step synthesis of β‐SiC and β‐Si₃N₄ whiskers. In this study, a mixture of the active precursors was allowed to react via a self‐sustaining reaction (high‐energy ball milling process). Scanning electron micrographs and X‐ray diffraction (XRD ) analysis showed that the rod‐like SiC whiskers (~800 µm) were synthesized in situ by the direct carbothermal reduction of silicon nitride (or silicon) with activated carbon in N₂ (or Ar) atmosphere. The results show that β‐Si₃N₄ (without β‐SiC ) was fully formed after 5 h of milling with four different morphologies, namely whisker tip (droplet/no droplet) and nonuniform whiskers (short hexagonal/rhombohedral/rod‐like) with a length of 0.1–400 µm. By adding metal sintering aids, the liquid phase Mg–Si–O–N and the rate of carbothermal reduction increased (enhanced densification via particle rearrangement) and their hexagonal whiskers tended to assume a rod‐like shape. The effect of the concentration of CO (reduction of α‐Fe₂O₃ to Fe by CO ) on the whisker synthesis suggests that, in addition to the concentration of CO , the nature of the family of mesoporous silica/carbon template is an important factor in the synthesis of β‐SiC and β‐Si₃N₄ whiskers. The possible chemical reactions were investigated by studying the unwanted phases (MgO , Si, SiC , Fe₂O₃ , Fe₃O₄ , FeO , Fe, Fe₃C , MgCO₃ ) of comparable XRD graphs.     

Kinetics of Silicon Nitride Formation on SiO2‐Derived Rice Husk Ash Using the Chemical Vapor Infiltration Method

Since silicon nitride coatings on silicon dioxide are attractive for the semiconductor and electronics industries, cognizance of their formation kinetics is crucial for optimization of production parameters. In this contribution, the deposition kinetics (rate constant and activation energy) of Si₃N₄ by the hybrid system chemical vapor infiltration route (HYSY‐CVI), starting from N₂:NH₃ and SiF₄ (produced by the decomposition of Na₂SiF₆) has been studied. The deposition rate equation for Si₃N₄ was established from several possible gas‐phase or surface reaction steps involved in the growth of Si₃N₄ coatings onto silica‐derived rice husk ash (RHA). Based on a judicious analysis of four different models, it was found that Freundlich's adsorption model satisfactorily represents the rate of Si₃N₄ deposition process onto RHA.     

Glucose Biosensor Based on Silicon Nitride Nanoparticles

For the first time silicon nitride (Si₃N₄) nanoparticles was used for preparation electrochemical biosensor. GOx immobilized on the Si₃N₄ nanoparticles exhibits facile and direct electrochemistry. The surface coverage and heterogeneous electron transfer rate constant (k_s) of immobilized GOx were 6.3×10^?13 mol cm^?2 and 47.4±0.3 s^?1. The sensitivity, linear concentration range and detection limit of the biosensor for glucose detection were 38.57 µA mM^?1 cm^?2, 25 µM to 8 mM and 6.5 µM, respectively. This biosensor also exhibits good stability, reproducibility and long life time. These indicate Si₃N₄ nanoparticles is good candidate material for construction of third generation biosensor and bioelectronics devices.     

Facile Access to an NHC‐Coordinated Silicon Ring Compound with a Si=N Group and a Two‐Coordinate Silicon Atom

Reaction of the bicyclo[1.1.0]tetrasilatetraamide Si₄{N(SiMe₃)Dipp}₄ 1 (Dipp=2,6‐diisopropylphenyl) with 5 equiv of the N‐heterocyclic carbene NHC^Me4 (1,3,4,5‐tetramethylimidazol‐2‐ylidene) affords a bifunctional carbene‐coordinated four‐membered‐ring compound with a Si=N group and a two‐coordinate silicon atom Si₄{N(SiMe₃)Dipp}₂(NHC^Me4)₂(NDipp) 2 . When 2 reacts with 0.25 equiv sulfur (S₈), two sulfur atoms add to the divalent silicon atom in plane and perpendicular to the plane of the Si₄ ring, which confirms the silylone character of the two‐coordinate silicon atom in 2 .     

High-Pressure Raman Spectroscopic Study of Spinel (ZnCr2O4)

An in situ Raman spectroscopic study was conducted to investigate the pressure-induced phase transformation in the synthetic ZnCr₂O₄ spinel up to pressures of 70 GPa at room temperature. Results indicate that ZnCr₂O₄ spinel starts to transform to the CaFe₂O₄ (or CaTi₂O₄) structure at 17.5GPa, and such a phase transformation is complete at 35 GPa. The coexistence of two phases over a wide range of pressure implies a sluggish mechanism upon phase transformation. No experimental evidence was observed to support the theoretical simulation with the dissociation of ZnCr₂O₄ to ZnO and Cr₂O₃ at 34 GPa. Moreover, enhancement of the intensity of the Raman peak at 642 cm⁻¹ at either elevated pressures or temperatures is most likely caused by an enhanced order-disorder effect. Upon release of pressure, the recovered phase may exhibit an inverse spinel structure, which differs from the initial normal spinel structure.     

A High‐Pressure Polymorph of Phosphorus Oxonitride with the Coesite Structure

The chemical and physical properties of phosphorus oxonitride (PON) closely resemble those of silica, to which it is isosteric. A new high‐pressure phase of PON is reported herein. This polymorph, synthesized by using the multianvil technique, crystallizes in the coesite structure. This represents the first occurrence of this very dense network structure outside of SiO₂. Phase‐pure coesite PON (coe‐PON) can be synthesized in bulk at pressures above 15 GPa. This compound was thoroughly characterized by means of powder X‐ray diffraction, DFT calculations, and FTIR and MAS NMR spectroscopy, as well as temperature‐dependent diffraction. These results represent a major step towards the exploration of the phase diagram of PON at very high pressures and the possibly synthesis of a stishovite‐type PON containing hexacoordinate phosphorus.