Composition-tunable Zn(x)Cd(1-x)Se nanocrystals with high luminescence and stability

High-quality Zn(x)Cd(1-x)Se nanocrystals have been successfully prepared at high temperature by incorporating stoichiometric amounts of Zn and Se into pre-prepared CdSe nanocrystals. With increasing Zn content, a composition-tunable emission across most of the visible spectrum has been demonstrated by a systematic blue-shift in emission wavelength. The photoluminescence (PL) properties for the obtained Zn(x)Cd(1-x)Se nanocrystals (PL efficiency of 70-85%, fwhm = 22-30 nm) are comparable to those for the best reported CdSe-based QDs. In particular, they also have good PL properties in the blue spectral range. Moreover, the alloy nanocrystals can retain their high luminescence (PL efficiency of over 40%) when dispersed in aqueous solutions and maintain a symmetric peak shape and spectral position under rigorous experimental conditions. A rapid alloying process was observed at a temperature higher than "alloying point". The mechanism of the high luminescence efficiency and stability of Zn(x)Cd(1-x)Se nanocrystals is explored.     

Large scale synthesis of stable tricolor Zn(1-x)Cd(x)Se core/multishell nanocrystals via a facile phosphine-free colloidal method

Here we report a new "green" method to synthesize Zn(1-x)Cd(x)Se (x = 0-1) and stable red-green-blue tricolor Zn(1-x)Cd(x)Se core/shell nanocrystals using only low cost, phosphine-free and environmentally friendly reagents. The first excitonic absorption peak and photoluminescence (PL) position of the Zn(1-x)Cd(x)Se nanocrystals (the value of x is in the range 0.005-0.2) can be fixed to any position in the range 456-540 nm. There is no red or blue shift in the entire reaction process. Three similar sizes of alloyed Zn(1-x)Cd(x)Se nanocrystals with blue, green, and yellow emissions were successfully selected as cores to synthesize high quality blue, green, and red core/shell nanocrystal emitters. For the synthesis of core/shell nanocrystals with a high quantum yield (QY) and stability, the selection of shell materials has been proven to be very important. Therefore, alternative protocols have been used to optimize thick shell growth. ZnSe/ZnSe(x)S(1-x) and CdS/Zn(1-x)Cd(x)S have been found as an excellent middle multishell to overcoat between the alloyed Zn(1-x)Cd(x)Se core and ZnS outshell. The QYs of the as-synthesized core/shell alloyed Zn(1-x)Cd(x)Se nanocrystals can reach 40-75%. The Cd content is reduced to less than 0.1% for Zn(1 -x)Cd(x)Se core/shell nanocrystals with emissions in the range 456-540 nm. More than 15 g of high quality Zn(1-x)Cd(x)Se core/shell nanocrystals were prepared successfully in a large scale, one-pot reaction. Importantly, the emissions of such thick multishell nanocrystals are not susceptible to ligand loss and stability in various physiological conditions.     

Alloyed Zn(x)Cd(1-x)S nanocrystals with highly narrow luminescence spectral width

High-quality alloyed Zn(x)Cd(1-x)S nanocrystals have been synthesized at high temperature by the reaction of a mixture of CdO- and ZnO-oleic acid complexes with sulfur in the noncoordinating solvent octadecene system. A series of monodisperse wurtzite Zn(x)Cd(1-x)S (x = 0.10, 0.25, 0.36, 0.53) nanocrystals were obtained with corresponding particle radii of 4.0, 3.2, 2.9, and 2.4 nm, respectively. With the increase of the Zn content, their photoluminescence (PL) spectra blue-shift systematically across the visible spectrum from 474 to 391 nm, indicating the formation of the alloyed nanocrystals. The alloy structure is also supported by the characteristic X-ray diffraction (XRD) patterns of these nanoalloys with different Zn mole fractions, in which their diffraction peaks systematically shift to larger angles as the Zn content increases. The lattice parameter c measured from XRD patterns decreases linearly with the increase of Zn content. This trend is consistent with Vegard's law, which further confirms the formation of homogeneous nanoalloys. These monodisperse wurtzite Zn(x)Cd(1-x)S nanoalloys possess superior optical properties with PL quantum yields of 25-50%, especially the extremely narrow room-temperature emission spectral width (full width at half-maximum, fwhm) of 14-18 nm. The obtained narrow spectral width stems from the uniform size and shape distribution, the high composition homogeneity, and the relatively large particle radius, which is close to or somewhat larger than the exciton Bohr radius. The process by which the initial structure with random spatial composition fluctuations turns into an alloy (solid solution) with homogeneous composition is clearly demonstrated by the temporal evolution of the PL spectra during the annealing progress.     

Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells

The electronic band structure at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface was investigated for its potential application in Cd-free Cu(In,Ga)Se(2) thin film solar cells. Zn(1-x)Mg(x)O thin films with various Mg contents were grown by atomic layer deposition on Cu(In(0.7)Ga(0.3))Se(2) absorbers, which were deposited by the co-evaporation of Cu, In, Ga, and Se elemental sources. The electron emissions from the valence band and core levels were measured by a depth profile technique using X-ray and ultraviolet photoelectron spectroscopy. The valence band maximum positions are around 3.17 eV for both Zn(0.9)Mg(0.1)O and Zn(0.8)Mg(0.2)O films, while the valence band maximum value for CIGS is 0.48 eV. As a result, the valence band offset value between the bulk Zn(1-x)Mg(x)O (x = 0.1 and x = 0.2) region and the bulk CIGS region was 2.69 eV. The valence band offset value at the Zn(1-x)Mg(x)O/CIGS interface was found to be 2.55 eV after considering a small band bending in the interface region. The bandgap energy of Zn(1-x)Mg(x)O films increased from 3.25 to 3.76 eV as the Mg content increased from 0% to 25%. The combination of the valence band offset values and the bandgap energy of Zn(1-x)Mg(x)O films results in the flat (0 eV) and cliff (-0.23 eV) conduction band alignments at the Zn(0.8)Mg(0.2)O/Cu(In(0.7)Ga(0.3))Se(2) and Zn(0.9)Mg(0.1)O/Cu(In(0.7)Ga(0.3))Se(2) interfaces, respectively. The experimental results suggest that the bandgap energy of Zn(1-x)Mg(x)O films is the main factor that determines the conduction band offset at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface. Based on these results, we conclude that a Zn(1-x)Mg(x)O film with a relatively high bandgap energy is necessary to create a suitable conduction band offset at the Zn(1-x)Mg(x)O/CIGS interface to obtain a robust heterojunction. Also, ALD Zn(1-x)Mg(x)O films can be considered as a promising alternative buffer material to replace the toxic CdS for environmental safety.     

One-pot noninjection synthesis of Cu-doped Zn(x)Cd(1-x)S nanocrystals with emission color tunable over entire visible spectrum

Unlike Mn doped quantum dots (d-dots), the emission color of Cu dopant in Cu d-dots is dependent on the nature, size, and composition of host nanocrystals (NCs). The tunable Cu dopant emission has been achieved via tuning the particle size of host NCs in previous reports. In this paper, for the first time we doped Cu impurity in Zn(x)Cd(1-x)S alloyed NCs and tuned the dopant emission in the whole visible spectrum via variation of the stoichiometric ratio of Zn/Cd precursors in the host Zn(x)Cd(1-x)S alloyed NCs. A facile noninjection and low cost approach for the synthesis of Cu:Zn(x)Cd(1-x)S d-dots was reported. The optical properties and structure of the obtained Cu:Zn(x)Cd(1-x)S d-dots have been characterized by UV-vis spectroscopy, photoluminescence (PL) spectroscopy, transmission electron microscopy (TEM), and X-ray diffraction (XRD). The influences of various experimental variables, including Zn/Cd ratio, reaction temperature, and Cu dopant concentration, on the optical properties of Cu dopant emission have been systematically investigated. The as-prepared Cu:Zn(x)Cd(1-x)S d-dots did show PL emission but with quite low quantum yield (QY) (typically below 6%). With the deposition of ZnS shell around the Cu:Zn(x)Cd(1-x)S core NCs, the PL QY increased substantially with a maximum value of 65%. More importantly, the high PL QY can be preserved when the initial oil-soluble d-dots were transferred into aqueous media via ligand replacement by mercaptoundeconic acid. In addition, these d-dots have thermal stability up to 250 °C.     

Highly luminescent CdSe/Cd(x)Zn(1-x)S quantum dots coated with thickness-controlled SiO2 shell through silanization

A silanization technique of hydrophobic quantum dots (QDs) was applied to SiO(2)-coated CdSe/Cd(x)Zn(1-x)S QDs to precisely control the SiO(2) shell thickness and retain the original high photoluminescence (PL) properties of the QDs. Hydrophobic CdSe/Cd(x)Zn(1-x)S core-shell QDs with PL peak wavelengths of 600 and 652 nm were prepared by a facile organic route by using oleic acid (OA) as a capping agent. The QDs were silanized by using partially hydrolyzed tetraethyl orthosilicate by replacing surface OA. These silanized QDs were subsequently encapsulated in a SiO(2) shell by a reverse micelles synthesis. The silanization plays an important role for the QDs to be coated with a homogeneous SiO(2) shell and retain a high PL efficiency in water. Transmission electron microscopy observation shows that the shells are 1-9 nm with final particle sizes of 10-25 nm, depending on the initial QD size. In the case of short reaction time (6 h), the QDs were coated with a very thin SiO(2) layer because no visible SiO(2) shell was observed but transferred into the water phase. The silica coating does not change the PL peak wavelength of the QDs. The full width at half-maximum of PL was decreased 4 nm after coating for QDs emitting at both 600 and 652 nm. The PL efficiency of the SiO(2)-coated is up to 40%, mainly determined by the initial PL efficiency of the underlying CdSe/Cd(x)Zn(1-x)S QDs.     

Control of metal-ion composition in the synthesis of ternary II-II'-VI nanoparticles by using a mixed-metal cluster precursor approach

The ternary molecular nanoclusters [Zn(x)Cd(10-x)Se4(SePh)12(PnPr3)4] (x = 1.8, 1 a; x = 2.6, 1 b) were employed as single-source precursors for the synthesis of high-quality hexagonal Zn(x)Cd(1-x)Se nanocrystals. The tellurium clusters [Zn(x)Cd(10-x)Te4(TePh)12(PnPr3)4] (x = 1.8, 2 a; x = 2.6, 2 b) are equally convenient precursors for the synthesis cubic Zn(x)Cd(1-x)E nanoparticles. The thermolysis of the cluster molecules in hexadecylamine provides an efficient system in which the inherent metal-ion stoichiometry of the clusters is retained in the nanocrystalline products, whilst also affording control of particle size within the 2-5 nm range. In all cases, the nanoparticles are monodisperse, and luminescence spectra exhibit emission energies close to the absorption edge. Analysis of the optical spectra and X-ray diffraction patterns of these materials indicates a metal-ion concentration gradient within the structures of the nanocrystals, with Zn(II) ions predominantly located near the surface of the particles.     

Band-gap engineering of semiconductor nanowires through composition modulation

Alloyed ternary CdS(1-x)Se(x) nanowires were synthesized by template-assisted electrodeposition, in which the ratio of S to Se in the nanowires was controlled by adjusting the relative amounts of the starting materials. Higher-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) showed that the alloyed ternary CdS(1-x)Se(x) nanowires are highly crystalline, and no phase-separated Cd was observed in these nanowires. Optical measurements indicated that the band-gap engineering can be realized in these CdS(1-x)Se(x) nanowires through modulating the composition of S and Se. With broadly tunable optical and electrical properties, these alloyed nanowires could be used in color-tuned nanolasers, biological labels, and nanoelectronics.     

Spatial bandgap engineering along single alloy nanowires

Bandgap engineering of semiconductor nanowires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS(1-x)Se(x) alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.     

Growth and luminescence of ternary semiconductor ZnCdSe nanowires by metalorganic chemical vapor deposition

ZnCdSe alloy nanowires were successfully grown on the GaAs (100) substrate by metalorganic chemical vapor deposition using Au as a catalyst. The nanowires display two distinct types of morphology. The majority of them are straight, uniform in diameter, and have a smooth surface. However, a significant portion of them contain one or two constrictions along their length. The alloy is found to be rich in Zn; its composition, as determined from X-ray diffraction and energy-dispersive X-ray microanalysis, is close to Zn(0.9)Cd(0.1)Se. The peak energy of its room temperature near-band-edge photoluminescence is also consistent with this composition. X-ray diffraction pattern and transmission electron microscopy find both types of nanowires to be single crystalline, have the metastable wurtzite structure, and a growth direction along 100. The presence of an Au-Cd-Zn alloy particle at the tip of the nanowires supports vapor-liquid-solid as the growth mechanism. The appearance of constrictions in some of the nanowires is found to be linked to the existence of structural defects, possibly stacking faults, during growth.     

ZnxCd1-xS纳米线的可控合成及其可调的光学性质

采用简单的气相沉积法,合成了不同组成的Zn_xCd_1-xS (0< x <1)纳米线. 利用扫描电子显微镜、透射电子显微镜和电子能谱研究了所制得的纳米线的表面形貌和组成. 该方法以Au为催化剂,简单控制起始物质的相对用量和沉积温度,可以获得可控的Zn/Cd 比例. X射线衍射结果表明所制得的Zn_xCd_1-xS纳米线具有纤维锌矿的单晶结构. 根据制得纳米线的表面形貌讨论了纳米线可能的生长机理为“底部生长”机理. 利用拉曼光谱和光致发光光谱研究了Zn_xCd_1-xS纳米线的光学性质,其纵向光学(LO)声子的拉曼位移频率随着组成的变化在ZnS和CdS的拉曼位移频率之间连续变化. 光致发光光谱中同时存在带边发光和缺陷发光. Zn_xCd_1-xS纳米线的带间跃迁的频率可随着组成的调节而调节,纳米线的禁带宽度介于ZnS (3.63 eV)和CdS (2.41 eV)的禁带宽度之间.     

Synthesis of Cysteine-Capped Zn(x)Cd(1)(-)(x)Se alloyed quantum dots emitting in the blue-green spectral range

Alloyed ZnxCd1-xSe quantum dots (QDs) have been successfully prepared at low temperatures by reacting a mixture of Cd(ClO4)2 and Zn(ClO4)2 with NaHSe using cysteine as a surface-stabilizing agent. The photoluminescence (PL) spectra of the alloyed QDs are determined on the basis of the Zn2+/Cd2+ molar ratio, reaction pH, intrinsic Zn2+and Cd2+ reactivities toward NaHSe, concentration of NaHSe, and the kind of thiols. A systematic blue shift in emission wavelength of the alloyed QDs was found with the increase in the Zn mole fraction. This result provides clear evidence of the formation of ZnxCd1-xSe QDs by the simultaneous reaction of Zn2+ and Cd2+ with NaHSe, rather than the formation of separate CdSe and ZnSe nanocrystals or core-shell structure CdSe/ZnSe nanocrystals. The size and inner structure of these QDs are also corroborated by using high-resolution transmission electron microscopy and X-ray powder diffraction. To further understand the formation mechanism, the growth kinetics of Zn0.99Cd0.01Se was studied by measuring the PL spectra at different growth intervals. The results demonstrated that, in the initial stage of growth, Zn0.99Cd0.01Se has a structure with a Cd-rich core and a Zn-rich shell. The post-preparative irradiation of these QDs improved their PL properties, resulting in stronger emission.     

Chemical Manipulation of Magnetic Ordering in Mn(1-x)Sn(x)Bi(2)Se(4) Solid-Solutions

Several compositions of manganese-tin-bismuth selenide solid-solution series, Mn(1-x)Sn(x)Bi(2)Se(4) (x = 0, 0.3, 0.75), were synthesized by combining high purity elements in the desired ratio at moderate temperatures. X-ray single crystal studies of a Mn-rich composition (x = 0) and a Mn-poor phase (x = 0.75) at 100 and 300 K revealed that the compounds crystallize isostructurally in the monoclinic space group C2/m (no.12) and adopt the MnSb(2)Se(4) structure type. Direct current (DC) magnetic susceptibility measurements in the temperature range from 2 to 300 K indicated that the dominant magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solutions below 50 K switches from antiferromagnetic (AFM) for MnBi(2)Se(4) (x = 0), to ferromagnetic (FM) for Mn(0.7)Sn(0.3)Bi(2)Se(4) (x = 0.3), and finally to paramagnetic (PM) for Mn(0.25)Sn(0.75)Bi(2)Se(4) (x = 0.75). We show that this striking variation in the nature of magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solution series can be rationalized by taking into account: (1) changes in the distribution of magnetic centers within the structure arising from the Mn to Sn substitutions, (2) the contributions of spin-polarized free charge carriers resulting from the intermixing of Mn and Sn within the same crystallographic site, and (3) a possible long-range ordering of Mn and Sn atoms within individual {M}(n)Se(4n+2) single chain leading to quasi isolated {MnSe(6)} octahedra spaced by nonmagnetic {SnSe(6)} octahedra.     

Soft X-ray characterization of Zn(1-x)Sn(x)O(y) electronic structure for thin film photovoltaics

Zinc tin oxide (Zn(1-x)Sn(x)O(y)) has been proposed as an alternative buffer layer material to the toxic, and light narrow-bandgap CdS layer in CuIn(1-x),Ga(x)Se(2) thin film solar cell modules. In this present study, synchrotron-based soft X-ray absorption and emission spectroscopies have been employed to probe the densities of states of intrinsic ZnO, Zn(1-x)Sn(x)O(y) and SnO(x) thin films grown by atomic layer deposition. A distinct variation in the bandgap is observed with increasing Sn concentration, which has been confirmed independently by combined ellipsometry-reflectometry measurements. These data correlate directly to the open circuit potentials of corresponding solar cells, indicating that the buffer layer composition is associated with a modification of the band discontinuity at the CIGS interface. Resonantly excited emission spectra, which express the admixture of unoccupied O 2p with Zn 3d, 4s, and 4p states, reveal a strong suppression in the hybridization between the O 2p conduction band and the Zn 3d valence band with increasing Sn concentration.     

Synthesis of Cd-free water-soluble ZnSe(1-x)Te(x) nanocrystals with high luminescence in the blue region

Cd-free core-shell nanocrystals (ZnSe(1-x)Te(x)/ZnS, 0相似文献   

Formation of Zn(1-x)MnxS nanowires within mesoporous silica of different pore sizes

Arrays of highly ordered Zn(1-x)MnxS quantum wires with x ranging from 0.01 to 0.3 and with lateral dimensions of 3, 6, and 9 nm were synthesized within mesoporous SiO2 host structures of the MCM-41 and SBA-15 type. The hexagonal symmetry of these arrays (space group p6m) and the high degree of order was confirmed by X-ray diffraction and transmission electron microscopy (TEM) studies. Physisorption measurements show the progressive filling of the pores of the SiO2 host structures, while TEM and Raman studies reveal the wire-like character of the incorporated Zn(1-x)MnxS nanostructures. X-ray absorption near-edge structure, extended X-ray absorption fine structure, photoluminescence excitation (PLE), and electron paramagnetic resonance studies confirm the good crystalline quality of the incorporated Zn(1-x)MnxS guest species and, in particular, that the Mn2+ ions are randomly distributed and are situated on tetrahedrally coordinated cation sites of the Zn(1-x)MnxS wires for all x up to 0.3. The amount of Mn2+ ions loosely bound to the surface of the Zn(1-x)MnxS nanowires is less than 4% of the total Mn content even for the 3 nm nanostructures up to the highest Mn content of x = 0.3. The effects of the reduction of the lateral dimensions on electronic properties of the diluted magnetic semiconductor were studied by PLE spectroscopy. Due to the quantum confinement of the excitons in the wires an increase of the direct band gap with decreasing particle size is observed.     

碳辅助CVD制备氧化硅纳米线及其光学性能

利用碳辅助CVD方法, 在1100~1140 ℃、常压、N2/H2气氛下, 以Fe-Al-O复合体系为催化剂, 在石英衬底上制备了大量非晶氧化硅纳米线. 该纳米线直径为20~200 nm, 长数百微米. 利用透射电镜、扫描电镜及电子能谱对氧化硅纳米线的形貌及组分进行了表征与分析; FTIR光谱显示了非晶氧化硅的3个特征峰(482, 806和1095 cm-1)和1132 cm-1无序氧化硅结构的强吸收峰. 氧化硅纳米线的光致发光光谱(PL)表明其具有较强的438 nm荧光峰.     

Bimodal bond-length distributions in cobalt-doped CdSe, ZnSe, and Cd1-xZnxSe quantum dots

Electronic absorption spectroscopy has been used to study changes in Co2+ ligand-field parameters as a function of alloy composition in Co2+-doped Cd(1-x)Zn(x)Se nanocrystals. A shift in the energy of the 4T1(P) excited-state with alloy composition is observed. Analysis reveals that Co2+-Se2- bond lengths change relatively little as the host is varied continuously from CdSe to ZnSe, generating a large difference between microscopic and average cation-anion bond lengths in Co2+-doped CdSe nanocrystals but not in Co2+-doped ZnSe nanocrystals. The bimodal bond-length distributions observed here are shown to cause a diameter-dependent enthalpic destabilization of doped semiconductor nanocrystals.     

Tuning the excitonic and plasmonic properties of copper chalcogenide nanocrystals

The optical properties of stoichiometric copper chalcogenide nanocrystals (NCs) are characterized by strong interband transitions in the blue part of the spectral range and a weaker absorption onset up to ~1000 nm, with negligible absorption in the near-infrared (NIR). Oxygen exposure leads to a gradual transformation of stoichiometric copper chalcogenide NCs (namely, Cu(2-x)S and Cu(2-x)Se, x = 0) into their nonstoichiometric counterparts (Cu(2-x)S and Cu(2-x)Se, x > 0), entailing the appearance and evolution of an intense localized surface plasmon (LSP) band in the NIR. We also show that well-defined copper telluride NCs (Cu(2-x)Te, x > 0) display a NIR LSP, in analogy to nonstoichiometric copper sulfide and selenide NCs. The LSP band in copper chalcogenide NCs can be tuned by actively controlling their degree of copper deficiency via oxidation and reduction experiments. We show that this controlled LSP tuning affects the excitonic transitions in the NCs, resulting in photoluminescence (PL) quenching upon oxidation and PL recovery upon subsequent reduction. Time-resolved PL spectroscopy reveals a decrease in exciton lifetime correlated to the PL quenching upon LSP evolution. Finally, we report on the dynamics of LSPs in nonstoichiometric copper chalcogenide NCs. Through pump-probe experiments, we determined the time constants for carrier-phonon scattering involved in LSP cooling. Our results demonstrate that copper chalcogenide NCs offer the unique property of holding excitons and highly tunable LSPs on demand, and hence they are envisaged as a unique platform for the evaluation of exciton/LSP interactions.     

Carrier dynamics in the luminescent states of Cd(1-x)Mn(x)S nanoparticles: effects of temperature and x-concentration

Optical absorption (OA), magnetic force microscopy (MFM), and photoluminescence (PL) measurements were employed to study Cd(1-x)Mn(x)S nanoparticles (NPs), grown in a glass matrix, at different x-concentrations. The formation of two well defined groups of NPs with different sizes was detected by OA spectra at room temperature and confirmed by MFM images, from which they were identified as quantum dots (QDs) and bulk-like nanocrystals (NCs). Emissions from luminescent states were observed in the temperature dependent PL spectra of both groups of NPs, including those from deep defects which were attributed to the presence of divacancies (V(Cd)-V(S)) in the hexagonal wurtzite structure. Furthermore, we have come up with a model based on rate equations that describes energy transfers involving the excitonic states of QDs, the conduction band of bulk-like NCs, and the shallow virtual levels of NPs. This model was used to fit the integrated PL intensity of the corresponding NP groups, and a good agreement between them confirms that the model suitably describes the temperature dependent carrier dynamics of Cd(1-x)Mn(x)S NPs.