Photocatalytic action of ZnO thin films prepared by the sol–gel method

Nanostructured ZnO thin films were deposited on glass by the dip-coating sol–gel method. The films exhibited pronounced activity to destroy malachite green in water both under UV-light illumination and in the dark.     

Photocatalytic and antibacterial activities of Ag-doped ZnO thin films prepared by a sol–gel dip-coating method

Silver-doped ZnO thin films with various loadings of Ag in the range of 0–10 mol% were prepared by the sol–gel dip-coating method. All prepared films show X-ray powder diffraction patterns that matched with ZnO in its würtzite structure. The grain size decreased as the Ag loading increased. The prepared films, under UV blacklight illumination, produced a photocatalytic degradation of methylene blue, rhodamine B and reactive orange solutions. Furthermore, they inhibited the growth of Escherichia coli bacteria under UV blacklight irradiation and to a lesser extent in dark conditions. The photocatalytic and antibacterial activities of the prepared films increased with Ag loading, presumably because Ag enhanced the efficiency of generation of superoxide anion radicals (^•O₂ ⁻) and hydroxyl radicals (^•OH).     

Microstructure and performance of AZO thin films prepared by sol–gel processing

Al-doped zinc oxide (AZO) films were prepared by a wet-chemical coating technique, their microstructure and crystal growth were characterized as a function of the single layer thickness. When similar final thicknesses are attained by more multiple subsequent coating-firing cycles, film porosity is reduced from over 14 to 2 %. Simultaneously the AZO crystallite size is increased from approximately 23 to 60 nm, a preferential c-axis oriented growth is observed. Different substrates (soda-lime glass, soda-lime glass with a SiO₂ barrier coating, borosilicate glass and alkali-free display glass) were used and the resulting AZO films were compared. It is found that the substrate composition primarily affects grain growth and subsequently the electrical performance of the AZO films.     

SnO2 thin films doped indium prepared by the sol–gel method: structure, electrical and photoluminescence properties

This paper reports on the preparation, characterization, electrical and optical properties of tin oxide (SnO₂) thin films doped indium prepared by the sol–gel method and deposited on glass substrates with dip coating technique. X-ray diffraction patterns showed an increase in the crystallinity of the films with increase in annealing temperatures. Atomic force microscopy analyses revealed an increase of grain growth with raise in annealing temperature. The film surface revealed positive skewness and kurtosis values less than 3 which make them favorable for OLEDs applications. The lowest resistivity (about 10^?7) was obtained for the ITO films annealed at 500 °C. These films acquire n-type conductivity due to the non-stoichiometric in the films like (interstitial tin atoms) and also due to low indium doping concentration. The optical properties of the films have been studied from transmission spectra. An average transmittance of >80 % in ultraviolet–visible region was observed for all the films. Optical band gap energy (E _gap) of ITO films was found to vary in the range of 3.69–3.81 eV with the increase in annealing temperature. This slight shift of E _gap to higher photon energies could be related to the crystalline nature of the films associated with the decrease in the defect concentration caused by annealing. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in annealing temperature. The high temperature annealing would be expected to decrease the density of defects, improve the crystal orientation and reduce the traps for non-radiative transition and also increase the oxidation processes.     

Preparation of nanostructured titania thin films by sol–gel technology

This study is concerned with the preparation of hydrolytically active heteroligand complex [Ti(OC₄H₉)_3.61(O₂C₅H₇)_0.39] from titanium butoxide and acetylacetone and with the gel formation kinetics in a solution of this complex upon hydrolysis and polycondensation. Single-layer and double-layer thin films of a solution of this precursor were coated on polished silicon substrates using the dip-coating method. The crystallization of nanostructured titania films during the heat treatment of these xerogel coatings was studied using various protocols; the anatase–rutile phase transition temperature was found to depend on the film thickness. The effects of the precursor solution viscosity on the film thickness and crystallite size were determined.     

Deposition of silica thin films formed by sol–gel method

Deposition of silica thin films on silicon wafer was investigated by in situ mass measurements with a microbalance configured for dip coating. Mass change was recorded with respect to deposition time when the substrate was fully immersed in the silica sol. Mass gain during deposition was higher than predicted from monolayer coverage of silica nano particles. This implied that deposition was facilitated by gelling of the nanoparticles on the substrate. The rate of deposition was enhanced by increasing the particle concentration in the sol and by decreasing the particle size from 12 to 5 nm. Increasing the salt concentration of the silica sol at constant pH enhanced the deposition of the silica particles. Reducing the pH of the sol from 10 to 6 decreased the deposition rate due to aggregation of the primary silica particles.     

Photocatalytic activity of TiO2 films prepared by sol–gel and electrodeposition on the decolourization of monoazo dyes

Journal of Sol-Gel Science and Technology - TiO2 films were prepared effectively using titanium tetraisopropoxide sol by simple electrodeposition technique on conductive indium tin oxide plates...     

The influence of annealing on electrochromic properties of Al–B–NiO thin films prepared by sol–gel

Al–B–NiO thin films were prepared using the sol–gel process and deposited on Indium tin oxide (ITO)-coated glass substrates via the dip-coating technique for the purpose of developing high performance electrochromic materials. The influence of the anneal on the structural and electrochromic properties of Al–B–NiO films is reported. Thermogravimetry (TG) and differential thermal analysis (DTA), cyclic voltammetry measurements (CV), UV spectrophotometer, atomic force microscopy (AFM) and X-ray diffraction (XRD) have been used to investigate the structural and electrochromic properties. The thickness of the films was determined by spectrophotometric analysis in 350–1,000 nm wavelength. Results showed that the Al–B–NiO thin films treated at high temperature have both the excellent electrochromic properties and good reversibility. The transmittance change (ΔT) of the film treated at 500 °C reaches still ~50% at the wavelength of 550 nm. The microstructure and the surface morphology were considered to play an important role in the electrochromic properties with different temperatures.     

The morphologies and optoelectronic properties of delafossite CuFeO2 thin films prepared by PEG assisted sol–gel method

Single phase delafossite CuFeO₂ thin films were synthesized by a simple sol–gel method. The influence of polyethylene glycol (PEG) on the morphology and optoelectronic properties of the films was studied by addition of 1.0 g PEG in 10 ml precursor solution. The crystal sizes of the derived CuFeO₂ films with and without addition of PEG were 49 nm, but the sample with addition of PEG (labeled as CFO-PEG) showed weaker c-axis orientation growth. The sample without addition of PEG (labeled as CFO) showed a compact surface without detectable pores and had a thickness around 50 nm. However, the sample CFO-PEG exhibited a porous surface with worm-like grains in nanometric scale and had a thickness around 310 nm. Enhanced absorbance in UV–vis region was observed for the sample CFO-PEG which might ascribe to both the thickness and porous surface. The optical direct bandgaps at near-UV were estimated to be ~3.0 and 3.38 eV for the sample CFO-PEG and CFO, respectively. Though the porous surface of CFO-PEG has improved the absorbance in UV–vis region, the resistivity has also been increased due to the homogeneous distribution of interspaces between the worm-like grains, which makes the incident photon to current efficiency of CFO-PEG lower than that of CFO.     

Effect of annealing temperature on the quality of Al-doped ZnO thin films prepared by sol–gel method

The different thermal expansion coefficients and lattice mismatch between ZnO and Al may produce residual stress in Al-ZnO (AZO) thin films. Annealing processes can be applied to modulate this residual stress. In this study, three different rapid thermal annealing (RTA) temperatures (350, 450, and 600 °C) were applied to an AZO thin film, prepared using sol–gel method. The mechanical properties, optical properties, and structure of the AZO thin film were investigated experimentally. The results show that increasing the RTA temperature increased the Young’s modulus and hardness of the films. The grain size of the films also increased with increasing RTA temperature. However, the film thickness and shear stress component decreased with increasing RTA temperature. Both compressive and tensile stress decreased gradually with increasing film thickness after RTA treatment. It was demonstrated that the use of a relatively high RTA temperature can effectively relax the residual stress in AZO thin films.     

Optical and structural properties of aluminium oxide thin films prepared by a non-aqueous sol–gel technique

Clear aluminium oxide sols without precipitation were synthesized via a non-aqueous sol–gel technique using three different alcohols (ethanol, isopropanol and n-butyl alcohol) as solvent, aluminium sec-butoxide as a precursor and acetyl acetone as a chelating agent. Although all sols could be successfully used to prepare thin films, the most stable one was prepared with n-butyl alcohol. Highly transparent, homogenous and amorphous aluminium oxide thin films were obtained on Si substrates after a heat treatment at 500 °C. X-Ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FT-IR) spectroscopy revealed all films were hydroxide free. The optical and structural properties of the films were particularly investigated. Any significant difference except from thickness on the film properties was not observed by changing the alcohol. Refractive index was used as an indication of the porosity of the films and ranged from 1.54 to 1.60.     

The effect of heat treatment in the reducing atmosphere on the physical properties of TiO2 thin films prepared by sol–gel method

Multilayered nanostructured TiO₂ thin films were prepared by sol–gel and dipping deposition on quartz substrate followed by thermal treatment under reducing atmosphere (20 %H₂–80 %Ar). Heat treatment at progressively higher temperatures caused structural, morphological, and optical changes, which were investigated by X-ray diffraction (XRD), atomic force microscopy, scanning electron microscopy, and UV–Vis spectroscopy. The conductivities of the thin films were also measured by 4-point probe method. The XRD results showed that the calcined TiO₂ thin films consist of single anatase phase which was completely transformed into rutile phase after heat treatment at 1,000 °C. The grains of films grew by intra-agglomerate densification after heat treatment at higher temperatures. The root mean square roughness of the samples was found to be in the range of 0.58–3.36 nm. The partially reduced TiO₂ samples have red-shifted transmittance bands due to new energy band formed by oxygen vacancies. The electrical conductivity of the films was also enhanced after heat treatment in reducing atmosphere.