Pressure induced anisotropy of electrical conductivity in polycrystalline molybdenum disulfide

Anisotropic specimens of MoS₂ are obtained by pressing the microcrystalline powder into special die. This inelastic compression results in a rearrangement of the disulfide micro platelets observed by atomic force microscopy and reflected in the macroscopic anisotropy in electrical conductivity in these samples. The conductivity measured parallel and perpendicular to the direction of applied pressure exhibits an anisotropy factor of ∼10 at 1 GPa. This behaviour of the conductivity as a function of applied pressure is explained as the result of the simultaneous influence of a rearrangement of the micro platelets in the solid and the change of the inter-grain distances.     

氢致LaMg2Ni合金薄膜的光电性能变化

采用电子束蒸发法沉积LaNi/Mg多层膜,再于350℃真空退火合金化的方法制备了厚度为375nm的LaMg2Ni合金薄膜.在吸、放氢过程中,该合金薄膜能够在高反射的金属态和透明的半导体态之间可逆地转变.在可见光波长范围内的平均透射率和电阻率在反射态和透明态之间的对比度大于104.利用扫描电子显微镜和原子力显微镜观察了吸放氢前后薄膜的表面及剖面形貌.结果表明,在氢化过程中薄膜表面的平整性降低且不可恢复,是脱氢态中出现低反射现象的主要原因.     

Effect of hydrogenation on the electrical conductivity of amorphous silicon carbide

The d.c. conductivity of RF sputtered hydrogenated amorphous SiC films have been studied in the temperature range of 350–130 K. High temperature data yield activation energy gap which increases significantly with hydrogen content, while the low temperature conductivity is explained by hopping between localized states.     

氢致LaMg2Ni合金薄膜的光电性能变化

采用电子束蒸发法沉积LaNi/Mg多层膜,再于350℃真空退火合金化的方法制备了厚度为375nm的LaMg₂Ni合金薄膜.在吸、放氢过程中,该合金薄膜能够在高反射的金属态和透明的半导体态之间可逆地转变.在可见光波长范围内的平均透射率和电阻率在反射态和透明态之间的对比度大于10⁴.利用扫描电子显微镜和原子力显微镜观察了吸放氢前后薄膜的表面及剖面形貌.结果表明,在氢化过程中薄膜表面的平整性降低且不可恢复,是脱氢态中出现低反射现象的主要原因. 关键词： 薄膜 光电性能 氢 形貌     

New metastable phases of silicon

It has been known since 1963 that a metastable phase (III,BC-8) results from the decompression of silicon from its high pressure metallic phases. However recent theoretical studies suggest the possibility of several metastable phases with similar total energies. Upon rapid release of pressure from the metallic state, two new, metastable, phases of Si have been discovered, with tetragonal structures. X-ray diffraction data on these new phases are presented.     

Excess electrical conductivity in polycrystalline Bi-Ca-Sr-Cu-O compounds and thermodynamic fluctuations of the amplitude of the superconducting order parameter

Measurements of the rounding effects on the electrical resistivity above the superconducting transition in Bi-Ca-Sr-Cu-O polycrystalline compounds are reported, to our knowledge for the first time in this HTSC system. These effects are analyzed in terms of thermodynamic fluctuations of the amplitude of the superconducting order parameter (SCOPF). In the mean-field-like region, the experimental critical exponent seems to be compatible with an order parameter of two components (2d) fluctuating in two dimensions (2D). This contrasts with previous results for A-Ba-Cu-O (A=Y, Ln) and Ln-M-Cu-O (M=Ba, Sr) superconductors, where SCOPF seem to be 2d-3D in all the different dynamic critical regions.     

MeV carbon ion irradiation-induced changes in the electrical conductivity of silver nanowire networks

MeV carbon ion irradiation-induced changes in the electrical conductivity of Silver nanowire (Ag-NW) networks is demonstrated systematically at different C⁺ ion fluences ranging from 1 × 10¹² to 1 × 10¹⁶ ions/cm² at room temperature. At low C⁺ ion fluences, the electrical conductivity of Ag-NWs decreases and subsequently increases with increase fluence. Finally, at high C⁺ ion fluences, conductivity again decreases. The variation in the electrical conductivity of Ag NW network is discussed after analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques. The observed increase in electrical conductivity is thought to be due to ion induced coalescence of Ag-NWs at contact position, which causes reduction of wire–wire contact resistance, while the decrease in electrical conductivity may be due to defect production by C⁺ ions into Ag-NWs. Ion beam technology is therefore a very promising technology that is capable of fabricating highly conductive Ag-NW networks for transparent electrodes. Moreover, a method for thinning, slicing and cutting of Ag-NWs using ion beam technology is also reported.     

Hopping conductivity in polycrystalline diamond films

The results of the experimental study of the conductivity of a polycrystalline diamond film by dielectric spectroscopy are presented. A diamond film about 200 μm thick was grown by microwave plasma-assisted chemical vapor deposition for 180 h. Two pronounced local peaks in the frequency dependence of the conductivity were observed. The relevant frequencies were temperature-dependent. These data permit us to hypothesize that the hopping mechanism of conductivity occurs in the polycrystalline diamond film. Two types of electrically active centers with different activation energies and relaxation times are involved in the conductivity.     

Thermal conductivity of polycrystalline zinc selenide

The thermal conductivity of optically transparent zinc selenide polycrystals fabricated by vapor deposition was experimentally studied in the temperature range 80–400 K in the as-deposited state and after deformation along the crystal growth direction followed by recrystallization. In the low-temperature range, textured ZnSe samples exhibit anisotropy of the thermal conductivity, which also persisted after their deformation and recrystallization. The anisotropy of the thermal conductivity is caused by phonon scattering by dislocations oriented along the crystal growth direction. The thermal conductivity of ZnSe at T>270 K is shown to be limited by the scattering of acoustic phonons by optical phonons.     

Fast proton conductivity of polycrystalline titanoniobates

The proton conductivity of three layer-type compounds was studied: H₃OTi₂NbO₇. H₂O, HTiNbO₅ and HTiTaO₅. Measurements were made between 20 °C and 90°C on pellets pressed from crystalline powders and soaked with pure water. The hydrated compound had the highest conductivity, (20°C)-6.3–6.9·10^–4 (cm)^–1. Acid ions from the exchange process were quite firmly retained in its layer structure and contributed significantly to the measured conductivity. Consistent results were obtained after prolonged washing with water.Dedicated to Professor Harry Thomas on the occasion of his 60th birthday     

A metastable electron trap in plastically deformed silicon

We communicate on an unusual feature of the DLTS spectrum of plastically deformed n-type silicon. In the cooling mode the DLTS signal at 240 K suddenly jumps nearly to zero. We interpret this effect as an entropy driven metastability of the deepest deformation-induced electron trap.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Dispersion of the complex conductivity in doped polycrystalline barium titanate

Possible mechanisms of polarization relaxation in barium titanate are considered. The dispersion of the dielectric permeability and conductivity is investigated. On the assumption of a single relaxation time, the dispersion coefficients are calculated. Assumptions are advanced on the development of interlayer polarization in the samples investigated.Translated from Izvestiya VUZ. Fizika, No. 6, pp. 52–56, June, 1973.     

Light-induced metastable state in doping-modulated amorphous silicon superlattices

Photo-induced decrease in conductance after long light exposure has been observed for hydrogenated amorphous silicon (a-Si:H) npnp . doping-modulated superlattices showing large persistent photoconductivity (PPC). The initial increase in PPC is taken over by the decrease even to the negative PPC after long illumination. This light-induced, metastable conductance can be recovered completely by 160°C annealing, which is independent of exposure time. In particular, the metastable defects created in the p-layers are found to be annealed out at 100°C. The subband gap light exposure on the a-Si:H npnp. multilayers showing n-type conduction gives rise to the increase of conductance. On the contrary, the conductance of the multilayers having p-channel conduction decreases by IR exposure. These results strongly suggest the creation and annealing of dangling bonds by light-soaking and annealing in doping-modulated superlattices.