共查询到20条相似文献,搜索用时 15 毫秒
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Laukkanen P Punkkinen MP Komsa HP Ahola-Tuomi M Kokko K Kuzmin M Adell J Sadowski J Perälä RE Ropo M Rantala TT Väyrynen IJ Pessa M Vitos L Kollár J Mirbt S Johansson B 《Physical review letters》2008,100(8):086101
First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2x1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2x1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation. 相似文献
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It has been found experimentally that the bond energy of arsenic atoms on the GaAs(100) surface decreases under the influence of adsorbed cesium. This is manifested in the disordering of the As-stabilized surface and in a decrease of ~(100 K in the temperature of the transition to the Ga-stabilized (100)GaAs(4×2)/c(8×2) surface. This effect is caused by the redistribution of the valence electron density between the arsenic atoms in the upper layer and the gallium atoms in the lower-lying layer as a result of charge transfer from the electropositive adsorbate to the semiconductor. In combination with the analogous effect of a decrease in the bonding energy of gallium atoms on the Ga-stabilized GaAs surface upon the adsorption of electronegative adsorbates (halogens), the effect observed allows the atomic layer etching of the polar GaAs(100) face. 相似文献
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Phase manipulation between c(4x2) and p(2x2) on the Si(100) surface has been demonstrated at 4.2 K for the first time using a low-temperature scanning tunneling microscope. We have discovered that it is possible to change the c(4x2) surface into the p(2x2) surface, artificially, through a flip-flop motion of the buckling dimers by using a sample bias voltage control. Also, scanning at a negative bias voltage or applying a pulse voltage can restore the c(4x2) surface. The STM images as a function of bias voltage and tunneling current reveal the interesting dynamics of the buckling dimers on the long debated surface. Our results will show that energetic tunneling electrons are most likely responsible for the observed phase transition from c(4x2) to p(2x2). 相似文献
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Angular resolved photoemission studies of c(2 x 2)CO adsorbed on Ni(100) show that the molecule is bound to the surface with the molecular axis normal to the surface. The uncertainty of this determination is approximately 15°, which is consistent with the expected angular broadening due to vibrational modes. This is in distinct contrast to a bend of 34° proposed to explain LEED data on this system. 相似文献