Hg0.9Tl0.1Ba2Ca2Cu3O8＋δ超导膜（Tc〈124K）在混合态中的输运？…

本文研究了ｃ轴取向的Ｈｇ０．９Ｔｌ０．１Ｂａ２Ｃａ２Ｃｕ３Ｏ８＋δ超导膜（Ｔｃ〉１２４Ｋ）在混合态下的电阻展宽及霍尔效应。低电阻区域的展宽显示出热激活磁通蠕动行为。在膜的超导转变温度以下,我们观察到霍尔电阻率符号反常现象。霍尔电阻率（ρｘｙ）和纵向电阻率（ρｘｘ）具有ρｘｙ（Ｔ）＝ｋρｘｘ＾β（Ｔ）的标度关系。     

高温超导体Hg0.9Tl0.2Ba2Ca2Cu3O8+δ的热导

测量了高温超Ｈｇ０．９Ｔｌ０．２Ｂａ２Ｃａ２Ｃｕ３Ｏ８＋δ的热导率,温度范围为２０～３００Ｋ。在超导转变温度Ｔｃ以下观察到热导率明显的增加。在６５Ｋ（～０．５Ｔｃ）附近,超导体的热导率表达到了一个宽的极大,热导率的极大值为的１．６倍。用正常态电子散射的模型对实验结果进行了拟合。     

Hg0.9Tl0.2Ba2Ca2Cu3O8+δ在磁场下的热导

实验研究了高温超导体Hg0.9Tl0.2Ba2Ca2Cu3O8+δ的低温热导率与温度和磁场的关系,测量温度为7-20 K,外加磁场为0-6 T.结果表明,在不同外场下,超导体的热导率在实验温区内随温度的增加均单调增加;在固定的温度下外加磁场使超导体的热导率减小,并随外磁场的增加达到一个稳定值;热导的相对变化率κ(H)/κ(0)与磁场的关系以及热导率达到稳定值的磁场与测量温度有关.分析讨论了超导体中正常态电子在磁场下受磁通涡旋散射产生附加的热阻.     

HgBa2Ca2Cu3O8+δ在Tc附近力学性质的研究

本文对Hg系高温超导样品(单相Hg-1223)在转变温度Tc附近的弹性性质进行了实验研究和理论分析.通过内耗测量、X射线衍射分析及电阻测试,研究该材料的相对杨氏模量声速和线性膨胀系数在Tc附近的变化规律;对实验结果进行热力学分析和理论计算,结果表明实验值与理论值基本吻合.     

高温超导HgBa2Ca2Cu3O8+δ薄膜的制备

我们曾用离子注入法,脉冲激光沉积等方法制备出了HgBa2Ca2Cu3O8+δ超导薄膜.但这些方法费用昂贵,难度较大.因此我们探索利用化学雾化技术在衬底上制备HgBa2Ca2Cu3O8+δ超导薄膜.制备过程包括两个步骤:第一步控制衬底温度制备Ba-Ca-Cu-O薄膜,并退火得到Ba-Ca-Cu-O前驱物;第二步,控制衬底温度并将HgCl2喷射在Ba-Ca-Cu-O前驱物薄膜上得到Hg-Ba-Ca-Cu-O薄膜,并将所得薄膜在氧气中氧化.目前我们正在探索利用这一技术来制备Hg-1223高质量的超导薄膜.     

Tl2Ba2Ca2Cu3O10的化学键性质和同质异能位移研究

在Tl2Ba2Can-1CunO2n 4(n=1,2,3,4)系列超导性氧化物中,Tl2Ba2Ca2Cu3O10具有最高Tc值(125 K)．利用电介质的平均能带模型计算了Tl2Ba2Ca2Cu3O10的局域化学键参数,得到Cu(1)-O键的共价性为0．561,Cu(2)-O键的平均共价性为0．296．应用化学环境因子计算了57Fe在Tl2Ba2Ca2Cu3O10中的穆斯堡尔同质异能位移,证实了57Fe在低掺杂时以Fe3 和Fe4 离子形式占据Cu(1)位置,而在高掺杂时以Fe3 和Fe4 离子形式分别占据Cu(1)和Cu(2)位置．结果表明,化学键理论计算有助于复杂晶体的穆斯堡尔谱的正确分析．     

YBa2Cu3O7-δ薄膜厚度在多层异质结构(Ag/Ba0.1Sr0.9TiO3/YBa2Cu3O7-δ/LaAlO3)中对Ba0.1Sr0.9TiO3介电性能的影响研究

铁电/超导(Ba, Sr)TiO3/YBa2Cu3O7-δ异质结在可调谐微波器件方面具有非常好的应用前景.我们采用1.2°斜切LaAlO3基片,以脉冲激光沉积法(PLD)制备出性能较好的Ba0.1Sr0.9TiO3/YBa2Cu3O7-δ (BST/YBCO)异质薄膜.并进一步研究了YBCO薄膜厚度对BST性能的影响.研究发现当YBCO薄膜厚度增加到180nm附近时,其生长模式由二维step-flow转变为三维岛状模式,严重损害了在YBCO上面生长的BST薄膜的介电性能.具体表现在:BST薄膜的介电常数和可调谐率明显降低,介电损耗和漏电流却大幅度上升.通过测量电容与温度的关系,以应力效应模型对这一实验现象作出解释,认为YBCO薄膜厚度超过临界值,生长模式的转变促使晶格失配应力在YBCO和BST薄膜中得到释放,这导致BST/YBCO界面粗糙,以及BST薄膜中产生了大量的位错和缺陷,BST薄膜的性能因而大为降低.此外,通过对完全相同条件生长的单层YBCO薄膜的表面形貌进行了AFM研究,测试结果进一步验证了YBCO薄膜厚度增加到180nm时,其表面变得异常粗糙,均方根粗糙度(RMS)从120nm厚度时的3nm增加到180nm厚度时的9nm.因此,我们提出:通过严格控制底层YBCO薄膜的厚度,进而控制它的生长模式,能够非常有效地提高BST薄膜的介电性能.     

Tb3+离子在固溶体(Y0.9Gd0.1)2O2S和(Gd0.9La0.1)2O2S中的发光

用稀土氧化物硫化法合成了固溶体发光材料(Y0.9Gd0.1)2O2S:Tb和(Gd0.9La0.1)2O2S:Tb,并且用阴极射线和254nm紫外线两种激发方式测试了它们的发光性能.研究了固溶体(Y0.9Gd0.1)2O2S:Tb和(Gd0.9La0.1)2O2S:Tb中Tb3+离子5D3——7FJ和5D4——7FJ的能级跃迁强度随Tb3+离子浓度而变化的关系,以及它们的发光色度随激活剂Tb3+离子浓度的变化,探讨了Tb3+离子的浓度猝灭机理.     

Nd0.9Ca0.1Ba2Cu3O6＋x超导体系的红外光谱研究

用固相反应法制备、并通过没条件的热处理得到了一组同氧含量的Ｎｄ０．９Ｃｄ０．１ｂａ２Ｃｕ３Ｏ６＋ｘ样品。用Ｘ射线衍射确定了样品的相结构。随着氧含量的增大，结构发生从四方到正交相变。进一步用红外吸收谱研究了体系的结构变化特征。谱图上６４２ｃｍ＾－１，５７８ｃｍ＾－１，５３８ｃｍ＾－１峰的出现及位移，与氧含量引起的结构变化是一致的，并讨论结构与超导电性的关系。     

Electrical and magnetic properties of Gd(Ba2-xLax)Cu3O7+δ

We have studied the structural, electrical, and magnetic properties of the normal and superconducting states Gd(Ba2-xLax)Cu3O7+ [Gd(BaLa)123] samples with 0.0 x 0.8 prepared by the standard solid-state reaction. XRD characterization shows an orthorhombic-tetragonal structural transition at x=0.2. Iodometric titration analysis shows the oxygen content of the samples increase with the increase of La doping. The resistivity curves show that for x0.15, there is metallic behavior, and for x0.2, there is a gradual insulating transition behavior in the normal state. The metal-insulator and superconductor-insulator transitions occur between x=0.35 and x=0.4. The superconducting transition temperature decreases with the increase of La content as two-step curve. The normal-state resistivity is fitted for two and three dimensional variable range hopping (2D&3D-VRH) and Coulomb gap (CG) regimes, separately. The results show that the dominant mechanism is CG for x0.35, and VRH for x0.4. The pinning energy U, derived from the thermally activated flux creep (TAFC) model and Ambegaokar-Halperin (AH) theory, shows a power-law relation as UH -. The critical current density decreases with the increase of La doping and magnetic field. The E-J curves show that the induced electric field increases with the increase of magnetic field and La concentration. The magnetization measurements indicate that the critical penetration fields and magnetic current density decrease with La doping.     

ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING,OXYGEN DOPING AND HIGH PRESSURE

The effects of Pb doping, oxygen doping ($\delta$= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg_0.8Pb_0.2Ba₂Ca₂Cu₃O_8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO₂ layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed T_c(P) by Pb substitution has to be described in the modified Neumeier's model.     

Rapid change of electronic anisotropy in overdoped (Y,Ca)Ba2Cu3O7−δ

Electronic anisotropy was studied for overdoped (Y, Ca)Ba₂Cu₃O_7−δ with various doping levels (p). It was found that the pseudogap-like behavior in the resistivity disappear when p exceeds 0.17, independent of the oxygen deficiency. The anisotropy ratio γ estimated from upper critical fields showed a rapid decrease at around p = 0.18, approaching γ = 3 for p > 0.20.     

在织构Ag基带上制备YBa2Cu3O7-δ超导膜

在织构Ａｇ基带上用脉冲激光方法沉积ＹＢａ２Ｃｕ３Ｏ７－δ超导膜,直流电阻法测量超导膜的临界电流密度为４×１０＾５Ａ／ｃｍ＾２。结合生成膜的结构分析,对ＹＢａ２Ｃｕ３Ｏ７－δ超导体在Ａｇ基带上的生长机制进行讨论。     

超导Tl2Ba2CaCu2O8+x 薄膜的太赫兹复电导率的提取

采用低温太赫兹时域光谱系统, 测试了高温超导 Tl2Ba2CaCu2O8+x 薄膜的太赫兹透射谱, 并提取了它在不同温度下的太赫兹电导率. 研究过程中发现提取后的参数存在电导率随频率波动大、与理论值偏差较大等问题.通过对基片厚度和太赫兹波入射角度的误差对高温超导薄膜电导率的影响进行了分析, 结果表明导致数据波动大是由于基片厚度的偏差引起的. 针对厚度差的影响, 一种矫正方法被提出, 通过对厚度的修正, 提高了数据提取的质量.