Valence band densities of states of CdIn2S4 and In2S3 from x-ray photoelectron spectroscopy

X-ray photoelectron spectra of the valence band of CdIn₂S₄ and In₂S₃ single crystals have been measured. The spectrum of CdIn₂S₄ has a strong resemblance to its synthesized spectrum from the In₂S₃ and CdS spectra, which is in good agreement with the theoretical density of states (DOS). The contribution of constituent atoms to the valence band DOS in CdIn₂S₄ is corresponding to those in In₂S₃ and CdS.     

Electronic structure of HgGa2S4

The electronic structure and chemical bonding in HgGa₂S₄ crystals grown by vapor transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa₂S₄ is found to be formed by splitted S 3p and Hg 6s states at binding energies BE=3-7 eV and the components at BE=7-11 eV generated by the hybridization of S 3s and Ga 4s states with a strong contribution from the Hg 5d states. At higher binding energies the emission lines related to the Hg 4f, Ga 3p, S 2p, S 2s, Hg 4d, Ga LMM, Ga 3p and S LMM states are analyzed in the photoemission spectrum. The measured core level binding energies are compared with those of HgS, GaS, AgGaS₂ and SrGa₂S₄ compounds. The valence band spectrum proves to be independent on the technological conditions of crystal growth. In contrast to the valence band spectrum, the distribution of electron states in the bandgap of HgGa₂S₄ crystals is found to be strongly dependent upon the technological conditions of crystal growth as demonstrated by the photoluminescence analysis.     

A XPS study of Fe1-χCuχCr2S4

The X-ray photoelectron spectroscopy is applied for a chalcogen chromite system Fe_{1 ? x}Cu_xCr₂S₄ to obtain microscopic information about valence states of the constituting atoms. The features of the Cu 2p spectra show that copper is always in a monovalent state in this system. This supports a model Fe³⁺_{1 ? x}Cu¹⁺_xCr³⁺₂S^1-_{2x ? 1}S^2-_{5 ? 2x} for a compositional range 0.5 < x < 1.     

The temperature dependence of penning ionization electron energy spectra: He(23S)—ar,N2, NO,O2, N2O,CO2

Using two intense thermal energy He(2³S) sources of different temperatures (≈400 and ≈ 1000 K, resp.) and a transmission-calibrated electron energy analyzer with about 30meV resolution, the dependence of He(2³S) Penning ionization electron spectra on collision energy for the target species Ar, N₂, NO, O₂, N₂O and CO₂ have been studied. The energy shifts of the Penning electron energy distributions and the branching ratios for the population of different electronic states in the molecular ions are determined quantitatively and compared for the two different collision temperatures. These results and the shapes of the observed Penning electron energy distributions are discussed in the light of current models for the Penning procen; the observed temperature dependences are correlated with the nature of the ionized orbitals in cases of only one entrance channel (closed shell targets) and, in addition, to the existence of qualitatively different entrance channels (open shell targets).     

Photoemission study of the density of valence states of amorphous As2S3 and Sb2S3

The densities of valence states of amorphous As₂S₃ and Sb₂S₃ have been investigated by means of X-ray photoemission and ultraviolet photoemission spectroscopy. The spectra are interpreted on the basis of existing band structure calculations.     

Penning ionization electron spectroscopy of H2O,D2O,H2S and SO2

Electron energy peak shifts and peak shapes were determined in the ionization of H₂O, D₂O, H₂S and SO₂ by Ne(³P₂) and He(2¹S, 2³S) metastable atoms. The shifts are large, especially in ionization of H₂O and D₂O into the ionic ground state and are probably mostly due to chemical interaction during the collision.In a previous paper the electron energy distribution curves for ionization of CO, HCl, HBr, N₂O, NO₂, CO₂, COS and CS₂ by helium, neon and argon metastables and the characteristics of this ionization were described¹. In this paper the series of triatomic molecules was extended to the molecules H₂O, D₂O, H₂S and SO₂. Because all these molecules have considerable dipole moments it could be expected that the peak shifts might be enhanced as compared with other triatomic molecules.     

Energy band structure and Frenkel excitons in PbGa2S4

Optical reflection spectra are measured and calculated in PbGa₂S₄ crystals in the region of resonances related to excitons with large oscillator strength and binding energy (Frenkel excitons). The splitting of the upper valence band in the center of the Brillouin zone due to crystal field (Δ_cf) and spin orbit (Δ_so) interaction are determined. Optical reflection spectra are measured and calculated according to Kramers-Kronig relations in the region of 3-6 eV in Е⊥с and Е∥с polarizations, and the optical constants n, k, ε₁ and ε₂ are determined. The observed electronic transitions in PbGa₂S₄ crystals are discussed in the frame of theoretical energy band structure calculation for thiogallate crystals.     

Selective effects of homogeneous and heterogeneous reactions in the system N21-CO

In the system N₂¹-CO, effects arising only from the reactions in the homogeneous phase have been isolated in a reactor with inert walls. After an induction period of 0.13 s, they involve a stationary rate of enhancement of N₂(B³Π_g) and N(⁴S) concentrations according to the reactions N₂(X¹Σ_g⁺)_v¹+CO→ CO(X¹Σ⁺)_v1 + N₂(X¹Σ_g⁺ and CO(X¹Σ⁺)_v1 + N₂(A³Σ_u⁺) → N (⁴S) + N(⁴S) + CO(X¹Σ⁺).In a reactor with active walls, both the above reactions in the homogeneous phase and heterogeneous reactions due to CO adsorbed on the walls are involved according to CO_ads + N₂(X¹Σ_g⁺)_{v1 ads or not} → CO(X¹Σ⁺)_v1 + N₂(X¹Σ_g⁺ and N(⁴S) + N(⁴S) + CO_ads → N₂(X¹Σ_g⁺) + CO(X¹Σ⁺)N(⁴S) + CO_ads → N₂(X¹Σ_g⁺) + CO(X¹Σ⁺). In this case, the rate of enhancement is not stationary. Furthermore, for cylindrical reactors with large diameters, the two types of reaction do not interact and their effects are additive.     

Electronic band structure of partially inverse spinel MgIn2S4 as calculated by the semiempirical pseudopotential method

The electronic band structure of the partially inverse spinel MgIn₂S₄ has been calculated on the symmetry lines ΓΛL, ΓΔX and ΓΣK by the semiempirical pseudopotential method. The general features of the band structure of MgIn₂S₄ are quite similar to those of the normal spinel CdIn₂S₄. The conduction band minimum is located at Γ and the valence band maximum is along the Σ line. The indirect energy gap (Γ_1cΣ_4v) is 2.50 eV. The effects of magnesium vacancy and variations in the cation distribution and in the parameter u are examined and shown to be small.     

Magnetic properties of the quasi-one-dimensional system BaMn2V 2O8

Magnetic properties of BaMn₂V ₂O₈ are investigated by means of susceptibility, magnetization, and heat capacity measurements. Our experimental results show that BaMn₂V ₂O₈ is a one-dimensional canted antiferromagnet. The antiferromagnetic transition at a relatively high T_N of 37 K may be due to an enhancement of interchain interaction in the system, since Mn²⁺ ions have large spin moment of S=5/2. Weak ferromagnetism in BaMn₂V ₂O₈ may be due to Dzyaloshinskii-Moriya interactions arising from its noncentrosymmetric crystal structure.     

Thermally and photo-induced changes in the valence states of vapour-deposited As2S3 films: A comparative photoemission study of As2S3 and As4S4

During thermal annealing or light irradiation, the changes in the valence states of vapour-deposited As₂S₃ and As₄S₄ films were observed by UPS. The experimental results reveal that an as-deposited As₂S₃ film contains considerable numbers of As₄S₄ molecular units, which polymerize or cross link to form a As₂S₃ glassy network on annealing or irradiation.     

Surface charging effects on valence band spectra in X-ray photoemission: Crystalline and Amorphous As2S3

In X-ray photoemission (XPS) studies on insulators, strong electric fields associated with surface charging can perturb the observed spectra. We find that the standard technique of flooding with thermal electrons to neutralize the net charge does not eliminate this effect for valence band spectra, but that the use of thin or (for photoconductors) illuminated samples does solve the problem. These conclusions are demonstrated by experiments revealing new structure in, and real differences between, the XPS valence band spectra of crystalline and amorphous As₂S₃.     

(e, 2e) spectroscopy of N2—valence momentum distributions and configuration interaction

The noncoplanar symmetric (e, 2e) reaction has been applied to N₂ at 1200, 600 and 400 eV. Separation energy spectra are obtained in the valence region, the observed structure extending to above 60 eV. Electron momentum profiles are measured at a number of separation energies. They agree very well with the momentum distributions for valence orbitals given by SCF calculations. Considerable configuration interaction structure is observed, being primarily due to configuration interaction in the 2σ_g hole state. At 1200 eV the spectroscopic sum rule is satisfied within experimental error, confirming the validity of the analysis.     

Magnetische struktur von columbiten MnTa2O6 und CoNb2O6

By means of neutron diffraction we found for MnTa₂O₆S₁S₂ S₃S₄ with a magnetic unit which is the same as the chemical. Whereas the chemical unit of CoNb₂O₆ is doubled in c-direction; all spins in the chemical unit are parallel. Therefore the orthorhombic symmetry of the crystal structure cannot be maintained. In both compositions are the spins parallel to the a-axis.     

Rovibrational spectrum and potential energy surface of the N2-N2O van der Waals complex

The rovibrational spectrum of the N₂-N₂O van der Waals complex has been recorded in the N₂O ν₁ region (∼1285 cm⁻¹) using a tunable diode laser spectrometer to probe a pulsed supersonic slit jet. The observed transitions together with the data observed previously in the N₂O ν₃ region are analyzed using a Watson S-reduced asymmetric rotor Hamiltonian. The rotational and centrifugal distortion constants for the ground and excited vibrational states are accurately determined. The band-origin of the spectrum is determined to be 1285.73964(14) cm⁻¹. A restricted two-dimensional intermolecular potential energy surface for a planar structure of N₂-N₂O has been calculated at the CCSD(T) level of theory with the aug-cc-pVDZ basis sets and a set of mid-bond functions. With the intermolecular distance fixed at the ground state value R = 3.6926 Å, the potential has a global minimum with a well depth of 326.64 cm⁻¹ at θ_N2 = 11.0° and θ_N2O = 84.3° and has a saddle point with a barrier height of 204.61 cm⁻¹ at θ_N2 = 97.4° and θ_N2O = 92.2°, where θ_N2(θ_N2O) is the enclosed angle between the N-N axis (N-N-O axis) and the intermolecular axis.     

Inelastic light scattering and photoluminescence in the mixed valence systems Eu3O4, Eu3S4 and Sm3S4

The thermally activated valence fluctuations of Eu₃S₄ and Sm₃S₄ have been studied using light scattering and photoluminescence techniques and are compared with measurements on the non-fluctuating compound Eu₃O₄, Eu₃S₄ exhibits an anomalous vibrational mode which is associated with the frequency factor of hopping, ν₂=1.3×10¹³ sec^?1. In Sm₃S₄ electronic Raman scattering is observed within the ⁷F₉ multiplet of the Sm²⁺ ion. An anomalous frequency shift of the5d-4f photoluminescence emission band in Eu₃S₄ is related to the temperature dependent fluctuation rate which passes through the reference time scale of the photoluminescence. Intra-4f photoluminescence has also been observed in Eu₃S₄ and Sm₃S₄.     

Exciton spectra, valence band splitting, and energy band structure of CuGaXIn1−XS2 and CuGaXIn1−XSe2 crystals

Exciton spectra are studied in CuGa_XIn_1−XS₂ solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The crystal field and spin orbit valence band splitting is calculated as a function of X taking into account the energy position of excitonic lines. The energy band structure of CuGa_XIn_1−XS₂ and CuGa_XIn_1−XSe₂ compounds is derived from optical spectra at photon energies higher than the fundamental band gap. The energies of optical transitions are tabulated for X values from 0 to 1.     

Antiferromagnetic phase transition in garnet-type AgCa2Co2V3O12 and AgCa2Ni2V3O12

Antiferromagnetic phase transition in two vanadium garnets AgCa₂Co₂V₃O₁₂ and AgCa₂Ni₂V₃O₁₂ has been found and investigated extensively. The heat capacity exhibits sharp peak due to the antiferromagnetic order with the Néel temperature T_N=6.39 K for AgCa₂Co₂V₃O₁₂ and 7.21 K for AgCa₂Ni₂V₃O₁₂, respectively. The magnetic susceptibilities exhibit broad maximum, and these T_N correspond to the inflection points of the magnetic susceptibility χ a little lower than T(χ_max). The magnetic entropy changes from zero to 20 K per mol Co²⁺ and Ni²⁺ ions are 5.31 J K⁻¹ mol-Co²⁺-ion⁻¹ and 6.85 J K⁻¹ mol-Ni²⁺-ion⁻¹, indicating S=1/2 for Co²⁺ ion and S=1 for Ni²⁺ ion. The magnetic susceptibility of AgCa₂Ni₂V₃O₁₂ shows the Curie-Weiss behavior between 20 and 350 K with the effective magnetic moment μ_eff=3.23 μ_B Ni²⁺-ion⁻¹ and the Weiss constant θ=−16.4 K (antiferromagnetic sign). Nevertheless, the simple Curie-Weiss law cannot be applicable for AgCa₂Co₂V₃O₁₂. The complex temperature dependence of magnetic susceptibility has been interpreted within the framework of Tanabe-Sugano energy diagram, which is analyzed on the basis of crystalline electric field. The ground state is the spin doublet state ²E(t₂⁶e) and the first excited state is spin quartet state ⁴T₁(t₂⁵e²) which locates extremely close to the ground state. The low spin state S=1/2 for Co²⁺ ion is verified experimentally at least below 20 K which is in agreement with the result of the heat capacity.     

Magnetic ordering in NdRh2Si2 and ErRH2Si2

Neutron diffraction and magnetization study of polycrystalline NdRh₂Si₂ and ErRh₂Si₂ was performed in the temperature range from 4.2 to 293 K. Both compounds are of ThCr₂Si₂ type crystal structure and exhibit antiferromagnetic ordering below T_N = 53 K and T_N = 12.8 K respectively. The magnetic structure wave vector is τ = [0, 0, 1].