Mean field theory of self-organized critical phenomena

A mean field theory is presented for the recently discovered self-organized critical phenomena. The critical exponents are calculated and found to be the same as the mean field values for percolation. The power spectrum has 1/f behavior with exponentg4=1.     

Polymers and random graphs: Asymptotic equivalence to branching processes

In 1974, Falk and Thomas did a computer simulation of Flory's Equireactive RA _f Polymer model, rings forbidden and rings allowed. Asymptotically, the Rings Forbidden model tended to Stockmayer's RA _f distribution (in which the sol distribution sticks after gelation), while the Rings Allowed model tended to the Flory version of the RA _f distribution. In 1965, Whittle introduced the Tree and Pseudomultigraph models. We show that these random graphs generalize the Falk and Thomas models by incorporating first-shell substitution effects. Moreover, asymptotically the Tree model displays postgelation sticking. Hence this phenomenon results from the absence of rings and occurs independently of equireactivity. We also show that the Pseudomultigraph model is asymptotically identical to the Branching Process model introduced by Gordon in 1962. This provides a possible basis for the Branching Process model in standard statistical mechanics.     

A unified drain current 1/f noise model for GaN-based high electron mobility transistors

In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas （2DEG） channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.     

Self-organized branching process for a one-dimensional rice-pile model

A self-organized branching process is introduced to describe one-dimensional rice-pile model with stochastic topplings. Although the branching processes are generally expected to describe well high-dimensional systems, our modification highlights some of the peculiarities present in one dimension. We find analytically that the crossover behavior from the trivial one-dimensional BTW behaviour to self-organized criticality is characterised by a power-law distribution of avalanches. The finite-size effects, which are crucial to the crossover, are calculated. Received 21 June 2001 and Received in final form 14 November 2001     

A theory of 1/f noise

Letu() be an absolutely integrable function and define the random process where thet _i are Poisson arrivals and thes _i, are identically distributed nonnegative random variables. Under routine independence assumptions, one may then calculate a formula for the spectrum ofn(t), S _n(), in terms of the probability density ofs, p_s(). If any probability density p_s() having the property p_s() I for small is substituted into this formula, the calculated S_n() is such that S_n() 1 for small . However, this is not a spectrum of a well-defined random process; here, it is termed alimit spectrum. If a probability density having the property p_s() for small , where > 0, is substituted into the formula instead, a spectrum is calculated which is indeed the spectrum of a well-defined random process. Also, if the latter p_s is suitably close to the former p_s, then the spectrum in the second case approximates, to an arbitrary, degree of accuracy, the limit spectrum. It is shown how one may thereby have 1/f noise with low-frequency turnover, and also strict 1/f ^1– noise (the latter spectrum being integrable for > 0). Suitable examples are given. Actually, u() may be itself a random process, and the theory is developed on this basis.     

光电耦合器电离辐射损伤电流传输比1/f噪声表征

在研究光电耦合器电离辐射损伤机理基础上,分别建立光电耦合器电离辐射损伤电流传输比(CTR)表征模型和1/f噪声表征模型.结果表明CTR退化和噪声增加都归因于辐射后光敏三极管集电结和发射结处SiO₂/Si界面缺陷增多.根据CTR退化和噪声变化分别与辐射剂量的关系,建立起噪声变化与CTR退化之间的关系,辐照实验对表征模型正确性进行了验证.运用噪声变化与辐射剂量的关系,通过低剂量辐照实验可以预测高剂量辐射后光电耦合器退化程度,故可用于评价光电耦合器抗辐射能力. 关键词： f噪声')" href="#">1/f噪声 光电耦合器 缺陷 模型     

基于稀疏分解的大功率半导体激光器1/f噪声参数估计的新方法

本文结合1/f噪声信号功率谱随频率成反比变化的关系, 以及稀疏分解可以根据信号灵活构造原子库的特点, 提出一种基于稀疏分解估计大功率半导体激光器1/f噪声的新方法, 构造了具备1/f噪声特点的过完备库. 在该过完备库中通过Matching Pursuit(MP)算法完成了白噪声与1/f噪声混叠信号的稀疏分解. 实验结果显示:该方法估计出淹没在白噪声环境中1/f噪声的γ 参数, 与频谱分析仪的测量结果有较好的一致性, 通过对比不同的过完备库证明了所构造的过完备库的优越性.     

基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管辐照退化模型

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论,建立了MOSFET辐照前1/f噪声参量与辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移之间的定量数学模型,并通过实验予以验证.研究结果表明,辐照诱生的氧化层陷阱通过俘获和发射过程与沟道交换载流子,在引起载流子数涨落的同时也通过库仑散射导致沟道迁移率的涨落,因此辐照前的1/f噪声幅值正比于辐照诱生的氧化层陷阱数.利用该模型对MOSFET辐照前1/f噪声与辐照退化的相关性从理论上 关键词： f噪声')" href="#">1/f噪声 辐照 金属-氧化物-半导体场效应晶体管 陷阱     

PbS红外探测器低频噪声物理模型及缺陷表征研究

为了表征PbS薄膜光导红外探测器的材料缺陷,详细推导了1/f和产生-复合(g-r)噪声物理模型,并由实验数据验证了模型的准确性. 利用1/f噪声与表面缺陷关系,计算了不同偏压下表面陷阱密度. 得到该值随偏压升高而增加,由此得出1/f噪声与所加偏压成正比变化,与实验测试结果相一致. 在此模型基础上,研究了g-r噪声与深能级缺陷特征参量的关系,提出由低频噪声表征缺陷激活能、简并因子、俘获截面等缺陷参数的方法. 关键词： 红外探测器 1/f噪声')" href="#">1/f噪声 噪声')" href="#">g-r噪声 缺陷     

I/f noise in systems showing stochastic resonance

Stochastic resonator systems with input and/or output 1/f noise have been studied. Disordered magnets/dielectrics serve as examples for the case of output 1/f noise with white noise (thermal excitation) at the input of the resonators. Due to the fluctuation-dissipation theorem, the output noise is related to the out-of-phase component of the periodic peak of the output spectrum. Spin glasses and ferromagnets serve as interesting examples of coupled stochastic resonators. A proper coupling can lead to an extremely large signal-to-noise ratio. As a model system, a l/f-noise-driven Schmitt trigger has been investigated experimentally to study stochastic resonance with input 1/f noise. Under proper conditions, we have found several new nonlinearity effects, such as peaks at even harmonics, holes at even harmonics, and 1/f noise also in the output spectrum.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

一种估计半导体激光器1/f噪声参数的新方法

对含白噪声的1/f分形信号小波变换系数的方差随尺度变化的关系进行适当的变换,提出了一种基于最小二乘法的估计半导体激光器1/f噪声参数的新方法.实验表明,该方法可以有效地提取出淹没在白噪声中的激光器1/f噪声,而且估计出的噪声信号的功率谱与对比仪器的测量结果有较好的一致性. 关键词： 半导体激光器 f噪声')" href="#">1/f噪声 参数估计 小波分析     

A deterministic sandpile automaton revisited

The Bak-Tang-Wiesenfeld (BTW) sandpile model is a cellular automaton which has been intensively studied during the last years as a paradigm for self-organized criticality. In this paper, we reconsider a deterministic version of the BTW model introduced by Wiesenfeld, Theiler and McNamara, where sand grains are added always to one fixed site on the square lattice. Using the Abelian sandpile formalism we discuss the static properties of the system. We present numerical evidence that the deterministic model is only in the BTW universality class if the initial conditions and the geometric form of the boundaries do not respect the full symmetry of the square lattice. Received 19 August 1999     

Migdal-Kadanoff renormalization group for theO(n) model

We perform a Migdal-Kadanoff renormalization group calculation on anO(n) symmetric model on ad-dimensional hypercubic lattice,d=2, 3. We find that in two dimensions the critical fixed point disappears asn=n _KT1.96, which is in good agreement with the exact valuen _KT=2. In three dimensions the fixed point persists much longer, albeit not all the way up to infinity. Surface critical phenomena in a semiinfiniteO(n) model are also considered.     

Excess noise in a hopping model for a resistor with quenched disorder

We consider a model for independent charged particles, hopping on a lattice with static disorder in the waiting times. The excess current noise is calculated and shown to be related to resistance noise and arising from mobility fluctuations. It is also related to the four point super-Burnett-function. The strength of the noise is calculated at small frequencies for weak disorder (classical long time tails) and for strong disorder, when it may behave like I/f. In that case the Hooge factor equals the fraction of deep trapping centers.     

Nonlinear optical effects for plasma diagnostics

Experimental investigations show that the 1/f noise intensityC and the contact resistanceR can be used to analyse contacts. The simply prepared contacts are fritted by discharging a capacitor, resulting in a multi-spot contact. A model relatesC andR to a number of contact spotsk with radiusa. More impulse-frittings at increasing energies decreaseC andR, thus enhancing the values ofk anda. From experimentalC vsR plots two regions are determined for GaAs: A fritting (a=constant) and A+B fritting (a∝k). Calculated values ofk are in good agreement with the number of peaks or pits formed by etching the semiconductor surface. From experimentalC vsW orR vsW curves, withW the cumulative impulse-fritting energy, the conclusion can be made thatka ³ is proportional toW.     

Quality assessments of electrochromic devices: the possible use of 1/<Emphasis Type="Italic">f</Emphasis> current noise

Electrochromic (EC) devices, capable of modulating their optical transmittance by charge insertion/extraction, were produced by laminating films comprised of nanoporous W oxide and Ni–V oxide by a polymer electrolyte and having this three-layer stack between transparent conducting In₂O₃:Sn films backed by polyester foils. 1/f noise in the current (I) was observed when the charged (colored) EC device was discharged via a resistor. The power spectral density S _i at fixed frequency scaled as S _i  ∼ I ². Extended color/bleach cycling degraded the optical quality and homogeneity of the device and concomitantly increased the 1/f noise intensity. These initial data indicate that 1/f noise has a potential to serve as a quality measure for EC devices.     

基于小波变换和维纳滤波的半导体器件1/f噪声滤波

针对半导体器件中普遍存在的1/f噪声提出了一种结合了提升小波变换和维纳滤波器的处理方法.首先利用重新加权迭代最小二乘法拟合1/f噪声的功率谱曲线得到噪声参数的估计,从而选择恰当的小波.其次,对包含了1/f噪声的信号进行提升小波变换.考虑到小波变换对1/f噪声的白化作用,利用维纳滤波器对每一层小波系数进行处理.设计了最优全通滤波器以校正维纳滤波器的相频特性,使得小波系数经滤波后相位不变.最后利用提升小波逆变换获得被1/f噪声淹没的信号.利用实验检验了提出方法的有效性,实验数据采自用于微创外科手术机器人的力传感器.结果表明提出的方法能够有效抑制1/f噪声,并使传感器的分辨力提高了25%. 关键词： 半导体器件 f噪声')" href="#">1/f噪声 提升小波变换 维纳滤波     

Critical properties of XY model dimensional layered magnetic on two- films

Using Monte Carlo simulations, we have investigated the classical $XY$ model on triangular lattices of ultra-thin film structures with middle ferromagnetic layers sandwiched between two antiferromagnetic layers. The internal energy, the specific heat, the chirality and the chiral susceptibility are calculated in order to clarify phase transitions and critical phenomena. From the finite-size scaling analyses, the values of critical exponents are determined. In a range of interaction parameters, we find that the chirality steeply goes up as temperature increases in a temperature range; correspondingly the value of a critical exponent for this change is estimated.