Crossover behavior of the anomalous Hall effect and anomalous nernst effect in itinerant ferromagnets

The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are experimentally investigated in a variety of ferromagnetic metals including pure transition metals, oxides, and chalcogenides, whose resistivities range over 5 orders of magnitude. For these ferromagnets, the transverse conductivity sigma{xy} versus the longitudinal conductivity sigma{xx} shows a crossover behavior with three distinct regimes in accordance qualitatively with a recent unified theory of the intrinsic and extrinsic AHE. We also found that the transverse Peltier coefficient alpha{xy} for the ANE obeys the Mott rule. These results offer a coherent and semiquantitative understanding of the AHE and ANE to an issue of controversy for many decades.     

Chern semimetal and the quantized anomalous Hall effect in HgCr2Se4

In 3D momentum space, a topological phase boundary separating the Chern insulating layers from normal insulating layers may exist, where the gap must be closed, resulting in a "Chern semimetal" state with topologically unavoidable band crossings at the Fermi level. This state is a condensed-matter realization of Weyl fermions in (3+1)D, and should exhibit remarkable features, such as magnetic monopoles and Fermi arcs. Here we predict, based on first principles calculations, that such a novel quantum state can be realized in a known ferromagnetic compound HgCr2Se4, with a single pair of Weyl fermions separated in momentum space. The quantum Hall effect without an external magnetic field can be achieved in its quantum-well structure.     

Quantum anomalous Hall effect in real materials

Under a strong magnetic field,the quantum Hall(QH) effect can be observed in two-dimensional electronic gas systems.If the quantized Hall conductivity is acquired in a system without the need of an external magnetic field,then it will give rise to a new quantum state,the quantum anomalous Hall(QAH) state.The QAH state is a novel quantum state that is insulating in the bulk but exhibits unique conducting edge states topologically protected from backscattering and holds great potential for applications in low-power-consumption electronics.The realization of the QAH effect in real materials is of great significance.In this paper,we systematically review the theoretical proposals that have been brought forward to realize the QAH effect in various real material systems or structures,including magnetically doped topological insulators,graphene-based systems,silicene-based systems,two-dimensional organometallic frameworks,quantum wells,and functionalized Sb(111) monolayers,etc.Our paper can help our readers to quickly grasp the recent developments in this field.     

Quantized anomalous Hall effect in two-dimensional ferromagnets: quantum Hall effect in metals

We study the effect of disorder on the anomalous Hall effect (AHE) in two-dimensional ferromagnets. The topological nature of the AHE leads to the integer quantum Hall effect from a metal, i.e., the quantization of sigma(xy) induced by the localization except for the few extended states carrying Chern numbers. Extensive numerical study on a model reveals that Pruisken's two-parameter scaling theory holds even when the system has no gap with the overlapping multibands and without the uniform magnetic field. Therefore, the condition for the quantized AHE is given only by the Hall conductivity sigma(xy) without the quantum correction, i.e., /sigma(xy)/>e(2)/(2h).     

Skyrmion Hall effect with spatially modulated Dzyaloshinskii–Moriya interaction

The skyrmion Hall effect is theoretically studied in the chiral ferromagnetic film with spatially modulated Dzyaloshinskii–Moriya interaction. Three cases including linear, sinusoidal, and periodic rectangular modulations have been considered, where the increase, decrease, and the periodic modification of the size and velocity of the skyrmion have been observed in the microscopic simulations. These phenomena are well explained by the Thiele equation, where an effective force on the skyrmion is induced by the inhomogeneous Dzyaloshinskii–Moriya interaction. The results here suggest that the skyrmion Hall effect can be manipulated by artificially tuning the Dzyaloshinskii–Moriya interaction in chiral ferromagnetic film with material engineering methods, which will be useful to design skyrmion-based spintronics devices.     

反常霍尔效应理论的研究进展

文章介绍了在铁磁性材料中反常霍尔效应的发现及其机制研究的历史；阐述了反常霍尔效应理论研究最近取得的重大进展，即倒空间中布洛赫态的贝里曲率（规范场）特性决定了霍尔电导率；同时指出，建立系统地解释反常霍尔效应机制的理论仍然是一个挑战性的任务．     

Weak localization corrections to the anomalous Hall effect

We calculate localization corrections to the anomalous Hall conductivity in the framework of side-jump and skew scattering mechanisms. In contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in case of side-jump mechanism, but is nonzero for the skew scattering.     

反常霍尔效应理论的研究进展

文章介绍了在铁磁性材料中反常霍尔效应的发现及其机制研究的历史;阐述了反常霍尔效应理论研究最近取得的重大进展,即倒空间中布洛赫态的贝里曲率(规范场)特性决定了霍尔电导率;同时指出,建立系统地解释反常霍尔效应机制的理论仍然是一个挑战性的任务.     

Pure anomalous Hall effect in nonmagnetic zinc-blende semiconductors

We report the experimental observation of the pure anomalous Hall effect (AHE) in nonmagnetic zinc-blende semiconductors without application of the external magnetic fields. The AHE without any contribution from the ordinary Hall current originates from nonequilibrium magnetization induced by spin-polarized electrons generated by the circularly polarized light (σ). We measure the pure AHE as a function of the external bias, crystal temperature and pumping σ-photon energy. The results of their dependences are discussed.     

Intrinsic versus extrinsic anomalous Hall effect in ferromagnets

A unified theory of the anomalous Hall effect (AHE) is presented for multiband ferromagnetic metals with dilute impurities. In the clean limit, the AHE is mostly due to extrinsic skew scattering. When the Fermi level is located around anticrossing of band dispersions split by spin-orbit interaction, the intrinsic AHE to be calculated ab initio is resonantly enhanced by its nonperturbative nature, revealing the extrinsic-to-intrinsic crossover which occurs when the relaxation rate is comparable to the spin-orbit coupling.     

Intrinsic anomalous Hall effect in type-II Weyl semimetals

Recently, a new type of Weyl semimetal called type-II Weyl semimetal has been proposed. Unlike the usual (type-I) Weyl semimetal, which has a point-like Fermi surface, this new type of Weyl semimetal has a tilted conical spectrum around the Weyl point. Here we calculate the anomalous Hall conductivity of a Weyl semimetal with a tilted conical spectrum for a pair of Weyl points, using the Kubo formula. We find that the Hall conductivity is not universal and can change sign as a function of the parameters quantifying the tilts. Our results suggest that even for the case where the separation between the Weyl points vanishes, tilting of the conical spectrum could give rise to a finite anomalous Hall effect, if the tilts of the two cones are not identical.     

磁性拓扑绝缘体中的量子化反常霍尔效应——无需外磁场的量子化霍尔效应

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体(Bi2Se3,Bi2Te3和Sb2Te3)薄膜中掺杂过渡金属元素(Cr或Fe)实现量子化反常霍尔效应的方法.     

磁性拓扑绝缘体中的量子化反常霍尔效应

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体（Bi2Se3, Bi2Te3 和 Sb2Te3）薄膜中掺杂过渡金属元素（Cr 或 Fe）实现量子化反常霍尔效应的方法.     

Tunable anomalous Hall effect in a nonferromagnetic system

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.     

Current carrying states in the disordered quantum anomalous Hall effect

In a quantum Hall effect, flat Landau levels may be broadened by disorder. However, it has been found that in the thermodynamic limit, all extended (or current carrying) states shrink to one single energy value within each Landau level. On the other hand, a quantum anomalous Hall effect consists of dispersive bands with finite widths. We numerically investigate the picture of current carrying states in this case. With size scaling, the spectrum width of these states in each bulk band still shrinks to a single energy value in the thermodynamic limit, in a power law way. The magnitude of the scaling exponent at the intermediate disorder is close to that in the quantum Hall effects. The number of current carrying states obeys similar scaling rules, so that the density of states of current carrying states is finite. Other states in the bulk band are localized and may contribute to the formation of a topological Anderson insulator.     

Ab initio theory of the scattering-independent anomalous Hall effect

We report on first-principles calculations of the side-jump contribution to the anomalous Hall conductivity (AHC) directly from the electronic structure of a perfect crystal. We implemented our approach for a short-range scattering disorder model within the density functional theory and computed the full scattering-independent AHC in elemental bcc Fe, hcp Co, fcc Ni, and L1(0) FePd and FePt alloys. The full AHC thus calculated agrees systematically with experiment to a degree unattainable so far, correctly capturing the previously missing elements of side-jump contributions, hence paving the way to a truly predictive theory of the anomalous Hall effect and turning it from a characterization tool to a probing tool of multiband complex electronic band structures.     

Linear magnetization dependence of the intrinsic anomalous Hall effect

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn5Ge3. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about approximately 240 K (0.8TC).     

Spin chirality fluctuations and anomalous Hall effect in itinerant ferromagnets

The anomalous Hall effect due to the spin chirality order and fluctuation is studied theoretically in a Kondo lattice model without the relativistic spin-orbit interaction. Even without the correlations of the localized spins, sigma(xy) can emerge depending on the lattice structure and the spin anisotropy. We reveal the condition for this chirality-fluctuation driven mechanism for sigma(xy). Our semiquantitative estimates for a pyrochlore oxide Nd2Mo2O7 give a finite sigma(xy) approximately equal 10 Omega(-1) cm(-1) together with a high resistivity rho(xx) approximately equal 10(-4)-10(-3) Omega cm, in agreement with experiments.     

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN2CSCl MXene

Quantum anomalous Hall effect (QAHE) is an innovative topological spintronic phenomenon with dissipationless chiral edge states and attracts rapidly increasing attention. However, it has only been observed in few materials in experiments. Here, according to the first-principles calculations, we report that the MXene MoYN$_{2}$CSCl shows a topologically nontrivial band gap of 37.3~meV, possessing QAHE with a Chern number of $C = 1$, which is induced by band inversion between $ {\rm d}_{xz}$ and ${\rm d}_{yz}$ orbitals. Also, the topological phase transition for the MoYN$_{2}$CSCl can be realized via strain or by turning the magnetization direction. Remarkably, MoYN$_{2}$CSCl shows the nodal-line semimetal state dependent on the electron correlation $U$. Our findings add an experimentally accessible and tunable member to the QAHE family, which stands a chance of enriching the applications in spintronics.     

Quantum anomalous Hall effect and related topological electronic states

Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically doped topological insulator (TI) completed a quantum Hall trio—quantum Hall effect (QHE), quantum spin Hall effect (QSHE), and quantum anomalous Hall effect (QAHE). On the theoretical front, it was understood that the intrinsic AHE is related to Berry curvature and U(1) gauge field in momentum space. This understanding established connection between the QAHE and the topological properties of electronic structures characterized by the Chern number. With the time-reversal symmetry (TRS) broken by magnetization, a QAHE system carries dissipationless charge current at edges, similar to the QHE where an external magnetic field is necessary. The QAHE and corresponding Chern insulators are also closely related to other topological electronic states, such as TIs and topological semimetals, which have been extensively studied recently and have been known to exist in various compounds. First-principles electronic structure calculations play important roles not only for the understanding of fundamental physics in this field, but also towards the prediction and realization of realistic compounds. In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants will be given with focus on the QAHE and Chern insulators. We will introduce the Wilson loop method and the band inversion mechanism for the selection and design of topological materials, and discuss the predictive power of first-principles calculations. Finally, remaining issues, challenges and possible applications for future investigations in the field will be addressed.