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We demonstrate that the transverse eigenmodes in a waveguide that combines a parabolic index guide with a Gaussian gain guide can be highly nonorthogonal. The excess-noise factor K that arises from this nonorthogonality exhibits resonant features with maximum values that can easily reach K approximately 400 . This simple model applies directly to stable-cavity microchip lasers with focused gain.  相似文献   

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卢伟涛  王顺金  张华 《中国物理 B》2010,19(2):20304-020304
The influence of parameters such as the strength and frequency of a periodic driving force on the tunneling dynamics is investigated in a symmetric triple-well potential. It is shown that for some special values of the parameters, tunneling could be enhanced considerably or suppressed completely. Quantum fluctuation during the tunneling is discussed as well and the numerical results are presented and analysed by virtue of Floquet formalism.  相似文献   

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We study resonant tunneling characteristics of inverted Morse double quantum barrier structures. The effect of electric bias and structure parameters is calculated by using non-equilibrium Green's function method. Results for the transmission coefficients are compared with the structure parameters. Our results show that the widths of the wells and heights of barriers have a significant effect on the transmission properties. We found that the resonant peak of the transmission coefficient decreases with increasing electric field bias. Moreover, resonant energy level increases with increasing barrier height and increasing width parameters.  相似文献   

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We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data.  相似文献   

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We study theoretically resonant tunneling of composite fermions through their quasibound states around a fractional quantum Hall island, and find a rich set of possible transitions of the island state as a function of the magnetic field or the backgate voltage. These have possible relevance to a recent experimental study, and reveal many subtleties involved in deducing fractional braiding statistics.  相似文献   

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卢仲毅  张晓光 《物理》2006,35(2):96-99
非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识.铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究;实验上也没有清晰地观测到自旋极化量子阱态的隧穿.文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe/MgO/FeO/Fe/Cr和其他铁磁量子阱隧道结中的共振隧穿,并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用.  相似文献   

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张晓光  卢仲毅 《物理》2006,35(02):96-99
非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识.铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究;实验上也没有清晰地观测到自旋极化量子阱态的隧穿.文章介绍了最近由卢仲毅、张晓光和Pantelides[1]预言的Fe/MgO/FeO/Fe/Cr和其他铁磁量子阱隧道结中的共振隧穿,并解释铁、钴、铬的Δ1能带的对称性在这种共振隧穿中的作用.  相似文献   

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We study the dynamics of a charge qubit, consisting of a single electron in a double well potential coupled to a point-contact (PC) electrometer, using the quantum trajectories formalism. Contrary to previous predictions, we show formally that, in the sub-Zeno limit, coherent oscillations in the detector output are suppressed, and the dynamics is dominated by inelastic processes in the PC. Furthermore, these reduce the detector efficiency and induce relaxation even when the source-drain bias is zero. This is of practical significance since it means the detector will act as a source of decoherence. Finally, we show that the sub-Zeno dynamics is divided into two regimes: low and high bias in which the PC current power spectra show markedly different behavior.  相似文献   

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We show experimentally that the combination of soft-edged gain and index guiding can lead to resonant excess quantum noise. Resonances with excess noise factors close to 100 are observed in end-pumped Nd3+:YVO4 lasers for cavity lengths in which two modes experience similar gain. An associated increase in the relaxation oscillation damping rate demonstrates that the fluctuation enhancement is indeed caused by excess quantum noise and not by dynamic instabilities.  相似文献   

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Magnetization measurements of a truly axial symmetry molecular nanomagnet with a spin ground state of S = 10 show resonant tunneling. This compound has the same magnetic anisotropy as but the molecules are better isolated and the crystals have less disorder and a higher symmetry. Hysteresis loop measurements at several temperatures reveal a well-resolved step fine structure which is due to level crossings of excited states. All step positions can be modeled by a simple spin Hamiltonian. The results establish a sharp crossover between thermally assisted and pure quantum tunneling, as had been previously predicted.  相似文献   

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We theoretically analyze the tunneling of electrons through a heterostructure with two barriers and a quantum well between them in a magnetic field perpendicular to the current. We take into account the contribution from electrons with various positions of the magnetic oscillator center to the current. The region of the Z-shaped current-voltage characteristic for the heterostructure is shown to narrow as the magnetic field strengthens. Our analysis reveals a critical magnetic field strength at which the Z-shaped current-voltage characteristic transforms into an N-shaped one. We compare our results with experimental data.  相似文献   

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This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.  相似文献   

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We report an experimental project to incorporate double-barrier tunnel structures into three-terminal devices. These devices have the negative-differential-resistance (NDR) features of the double barrier, and the added flexibility of a third controlling electrode. One way to make such a device involves the series combination of a double-barrier tunnel structure with a field-effect transistor. We have realized this concept in two types of devices, using samples grown by metalorganic chemical vapor deposition. The devices consist of a GaAsAlxGa1−xAs double-barrier tunneling heterostructure, the current through which is controlled by either an integrated vertical field-effect transistor or a planar metal-semiconductor field effect transistor. The voltage location and peak-to-valley current ratio of the NDR present in the source-drain circuit can be modulated with gate voltage. Experimental results for four samples are presented.  相似文献   

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We demonstrate the interplay between the intensity noise and the spatial emission characteristics of resonant-cavity light-emitting diodes. First, we find that the total aperture intensity noise exhibits a sub-shot noise behavior in a quite large pumping regime. Second, we investigate the angular, spectral, and spatial emission characteristics of the devices by controlling the shape and width of the angular intensity distribution via temperature detuning of the quantum well wavelength and the cavity resonance wavelength. Finally, the angular and aperture resolved intensity noise exhibit a super-shot noise behavior in contrast to that of the total emission. We explain this difference with anticorrelations between various radial components which increase with the temperature-tuned extension of the spatial emission. PACS 85.60.Jb; 42.50.L; 23.20.En  相似文献   

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