位错的会聚束电子衍射研究

从硅位错附近得到的会聚束电子衍射图样表明高阶劳厄带线和菊池线分裂,晶体学等效的衍射显示不同的分裂或不分裂,这些结果可以用晶体缺陷的衍衬理论来解释,不分裂的衍射相当于位错的不可见,即g·b=0,会聚束电子衍射提供了强有力的研究缺陷的高空间分辨率手段。 关键词：     

硅器件工艺过程中晶体滑移位错的引入和演变

半导体材料硅中存在的原生晶体缺陷(如位错、层错、旋涡缺陷)及半导体硅器件加工工艺过程中的诱生晶体缺陷(如外延层错、热氧化杆状缺陷、扩散导致的缺陷)都会给器件带来有害的影响.为了揭示缺陷是如何影响材料的结构和器件的性能,人们必须设法观察缺陷的位错、形貌,并研究它们是如何引入和演变的. 我们在60kw旋转阳极X光机上,用X射线形貌技术[1]跟踪双极集成电路基本工艺──外延、氧化、扩散过程,观察晶体滑移位错的引入和演变,并研究了滑移位错与器件成品率之间的相关性.在这方面,国内外都有过很好的工作[2,4],现将我们的实验结果报告如…     

磷酸铝(AlPO_4)晶体中缺陷的X射线形貌研究

用X射线衍射形貌法研究了AlPO_4晶体中的微观缺陷。在所研究的晶体中,主要晶体缺陷是生长层,沉淀物和位错。位错密度在晶体表面附近最大,晶体中部较低。位错主要起源于热应力和由沉淀物或生长层所造成的晶格畸变。多数位错的柏氏矢量是b=(a+c)<1123>型,部分的是b=a[2TT0]。分析了晶体缺陷与生长条件之间的关系。控制生长过程中的温度波动,特别是晶体出炉时的冷却速度,对提高晶体完美性是重要的。     

GaN晶体中堆垛层错的高分辨电子显微像研究

借助高分辨电子显微像结合解卷处理的方法研究了GaN晶体中的堆垛层错.简要介绍了高分辨电子显微像的解卷处理原理，指出通过解卷处理可以把本来不直接反映待测晶体结构的高分辨电子显微像转换为直接反映晶体结构的图像.用高分辨电子显微像观察了GaN晶体中的堆垛层错，对高分辨电子显微像作了解卷处理.在解卷像上清晰可见缺陷核心的原子排列情况，据此确定了层错的类型.此外，还讨论了解卷处理在研究晶体缺陷中的效用. 关键词： GaN 晶体缺陷 高分辨电子显微学 解卷处理     

磷酸铝(AlPO4)晶体中缺陷的X射线形貌研究

用X射线衍射形貌法研究了AlPO₄晶体中的微观缺陷。在所研究的晶体中,主要晶体缺陷是生长层,沉淀物和位错。位错密度在晶体表面附近最大,晶体中部较低。位错主要起源于热应力和由沉淀物或生长层所造成的晶格畸变。多数位错的柏氏矢量是b=(a+c)<1123>型,部分的是b=a[2110]。分析了晶体缺陷与生长条件之间的关系。控制生长过程中的温度波动,特别是晶体出炉时的冷却速度,对提高晶体完美性是重要的。 关键词：     

SiC晶体缺陷的阴极荧光无损表征研究

由于在研究SiC晶体缺陷对器件性能的影响的过程中,表征材料缺陷的常用的方法是破坏性的,因此寻找一种无损的测试方法对缺陷进行有效的表征显得尤为重要。基于阴极荧光(CL)的工作原理对4H-SiC同质外延材料的晶体缺陷进行了无损测试研究。结果发现利用阴极荧光可以观测到晶体内部的堆垛层错、刃位错和螺位错以及基面位错,其阴极荧光图中的形貌分别为直角三角形、点状和短棒状。因此该方法成为SiC晶体缺陷的无损表征时的一种有效的测试方法。如果利用该方法对材料的衬底和外延层缺陷分别进行观测就能建立起衬底和外延层缺陷之间的某种联系,另外对器件工作前后的缺陷进行表征,建立器件工作前后缺陷之间的联系,就可以进一步地研究材料缺陷对器件性能影响的问题。     

一维离子导体α—LiIO_3中空间电荷涨落导致的光衍射现象的理论解释(Ⅱ) 各向同性模

本文进一步用文献中建立的理论,处理α-LiIO_3单晶在c向加静电场后出现的偏振不变的两类衍射带:(1)垂直于c轴的广角衍射带(第一类);(2)与c轴成倾角的小角衍射带(第二类)。理论证明了前者在入射光垂直于c轴时有可能产生很弱的o→o和e→e衍射;而当转动晶体使入射方向与c轴夹角α由90°减小时,o→o模的强度不变而e→e模则单调地成倍增加。我们还发展了比文献中给出的更为普遍的理论表达式,并针对第二类现象讨论了近乎平行于锥面的生长层上离子富集和涨落所引起的衍射带。从衍射带角宽不大于8°这一事实估算出,生长层方向偏离程度不超过2°,平均间隔不小于5μm。同样的模型也解释了o→e和e→o的衍射光斑的现象。     

一维离子导体α—LiIO3中空间电荷涨落导致的光衍射现象的理论解释(Ⅱ)——各向同性模

本文进一步用文献[1]中建立的理论,处理α-LiIO₃单晶在c向加静电场后出现的偏振不变的两类衍射带:(1)垂直于c轴的广角衍射带(第一类);(2)与c轴成倾角的小角衍射带(第二类)。理论证明了前者在入射光垂直于c轴时有可能产生很弱的o→o和e→e衍射;而当转动晶体使入射方向与c轴夹角α由90°减小时,o→o模的强度不变而e→e模则单调地成倍增加。我们还发展了比文献[1]中给出的更为普遍的理论表达式,并针对第二类现象讨论了近乎平行于锥面的生长层上离子富集和涨落所引起的衍射带。从衍射带角宽不大于8°这一事实估算出,生长层方向偏离程度不超过2°,平均间隔不小于5μm。同样的模型也解释了o→e和e→o的衍射光斑的现象。 关键词：     

掺铁铌酸锂(LiNbO_3:Fe)的光致损伤

本文研究了LiNbO_3:Fe的可见激光表面损伤;光伤迹线(位错滑移带与微裂纹)与针状微畸伴生。它们位于光斑边缘的正P_s端;微畴起于光伤迹线与晶体表面的圆柱形沟道。我们发现LN:Fe中的这些损伤缺陷能够为光生伏特效应下的空间电荷所缀饰;它们在正交偏光镜下明晰可见。本文讨论了由晶体缺陷所致的自增强衍射光,富集于缺陷的空间电荷所致的空洞场,以及由此场导致的发生在畴界上的静电斥力对此损伤所起的作用。     

基于紧束缚理论的一维多镜像光子晶体特性研究

基于紧束缚理论,分析了一维多镜像光子晶体中多缺陷模的产生及缺陷模式分裂的机理,建立了缺陷模频率与缺陷层相对位置的关系模型.采用传输矩阵理论研究了双镜像光子晶体的光学传输特性,并讨论了光子晶体周期层数、入射角度、介质层厚度等及介质的相对折射率差等参数对光子晶体缺陷模特性的影响.模拟结果表明,调整光子晶体参数和缺陷层的相对位置可有效调控光子晶体的缺陷模特性,可为光子晶体多通道滤波器等光学器件的设计和应用提供一定的理论参考.     

Weak charge-lattice coupling requires reinterpretation of stripes of charge order in La1-xCaxMnO3

Modulations in manganites attributed to stripes of charge/orbital/spin order are thought to result from strong electron-lattice interactions that lock the superlattice and parent lattice periodicities. Surprisingly in La1-xCaxMnO3 (x>0.5,90 K), convergent beam (3.6 nm spot) electron diffraction patterns rule out charge stacking faults and indicate a superlattice with uniform periodicity. Moreover, large area electron diffraction peaks are sharper than simulations with stacking faults. Since the electron-lattice coupling does not lock the two periodicities (to yield stripes) it may be too weak to strongly localize charge.     

Shape change as an indicator of mechanism in the high-pressure structural transformations of CdSe nanocrystals

X-ray diffraction was used to monitor the structure of 45 A diameter CdSe nanocrystals as they transformed repeatedly between fourfold and sixfold coordinated crystal structures. Simulations of the diffraction patterns reveal that a shape change occurs as the crystals transform. They also show that stacking faults are generated in the transition from the high- to the low-pressure phase. The shape change and stacking fault generation place significant constraints on the possible microscopic mechanism of the phase transition.     

Study of the polymorphic hexagonal-face-centered-cubic transformation in Cu2S

The results of a dynamic high-temperature x-ray diffraction investigation into the special characteristics of the hexagonal-fcc polymorphic transformation in Cu₂S are presented. Close to the phase-transformation temperature, two groups of superstructural reflections appear on the x-ray diffraction patterns, some of these being indexed in the 12H hexagonal lattice (Ramsdel) and others in the 14H lattice. The mechanism of the hexagonal — fcc phase transition in Cu₂S is considered as passing through the intermediate 12H and 14H polytypic structures by way of the successive accumulation of periodically disposed stacking faults. The effect of thermal cycling within the phase-transformation temperature range on the course of the actual transformation is verified.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 100–103, May, 1976.     

The structure of nitrogen-supersaturated ferrite produced by ball milling

Highly supersaturated solid solutions of nitrogen in ferrite (bcc) were produced by ball milling of various powder mixtures of α-iron and ε-Fe₃N_1.08. The microstructure and the crystal structure of the product phases were examined as a function of nitrogen content using X-ray powder diffraction, high-resolution electron microscopy and Mössbauer spectroscopy. It was found that the grain size decreases with increasing nitrogen content. Unexpected shifts of the reflections in the X-ray powder diffraction patterns of the supersaturated N-ferrites, depending on the hkl values of the reflections and nitrogen content, were observed. These shifts cannot be explained by tetragonal distortion of the bcc unit cell, but they are in accordance with the occurrence of a certain type of stacking faults on bcc {211} planes. This result, together with the observation of some isolated fcc crystals (by high-resolution electron microscopy) and a drop in microstrain for high nitrogen contents, demonstrates that unconventional deformation mechanisms are operative in these materials below a certain grain size, leading to a breakdown of the classical Hall–Petch relation for mechanical strengthening.     

Stacking faults and microstructural parameters in non-mulberry silk fibres

We have analysed the broadening of X-ray reflections observed in nonmulberry silk fibres in terms of stacking faults and microstructural parameters using a single-order method and have, with these parameters, developed, for the first time, a procedure to compute the whole pattern of these silk fibres. The essential deviations in the values of microstructural parameters obtained from line profile and whole pattern fitting procedures are discussed in this paper.     

Mechanism of phase transformations in ZnS

X-ray diffraction of the 2H-3C transformation in ZnS crystals has been studied to determine the mechanism of the phase transformation. Single crystals of 2H ZnS were annealed in vacuum at different temperatures to induce the phase transformation and then quenched to arrest it at different intermediate stages. The transformation is found to occur by the non-random nucleation of stacking faults in the 2H structure which produce characteristic diffuse steaks along reciprocal lattice rows parallel toc* for whichH−K ≠ 0 (mod 3). All the crystals finally transform to a disordered twinned 3C structure. A study of the broadening of the x-ray diffraction maxima reveals that the stacking faults involved in the transformation are basal plane deformation faults. Initially these nucleate at random producing a random distribution of cubic nuclei within the 2H structure. As the transformation proceeds these 3C nuclei grow into thick 3C regions by a preferential nucleation of the faults at 2-layer separations. Since the 3C nuclei can have twin orientations the resulting 3C structure invariably contains a random distribution of twin faults. This is confirmed by comparing the experimentally observed intensity profile of the 10.L reflections as recorded on a single crystal diffractometer, with those calculated theoretically for a randomly twinned cubic structure.     

Adsorption-induced variation of diffraction lines of a substrate with stacking-faults

The variation of certain lines of diffraction of the substrate, when adsorption takes place, can give information on the position of the adsorbate relative to the substrate and its degree of registry. This variation is altered by stacking faults in the substrate. A calculation of these variations, which takes account of the above faults, is presented. It is shown that when stacking faults are few a good approximation can be obtained by considering perfect crystallites, but the exact allotropie variety depends upon the line examined.     

The anomalous RHEED patterns observed from (111)Ag-(111)Cu bilayers

RHEED patterns obtained from thin expitaxial bilayers consisting of Ag grown on smooth (111)Cu surfaces have been shown by Gradmann and Krause to contain anomalous reflections. Previously, these reflections were interpreted as due to a regular arrangement of interfacial dislocations or to multiple diffraction effects. In the present work a thin film technique was used to form smooth, easily detachable (111)Ag/Cu bilayers from which RHEED patterns containing these extra reflections were obtained. These films were grown, annealed, and examined in situ by UHV-RHEED techniques. They were then removed from the vacuum system, detached from their substrates and examined by TEM and TED. Thus, contrary to previous work, the present observations consisted of a series of experiments using RHEED, TED, and TEM carried out on the same specimen. No evidence was obtained to indicate that the anomalous reflections were due to interfacial dislocations. Rather, all the observed phenomena could be explained entirely by multiple diffraction effects.     

镍铬合金中不全位错的透射电子显微镜观察

对镍铬合金(20％Cr,1％Al,2.5％Ti)中层错边界处及共格孪晶界面上的不全位错进行了观察和分析,结果是:1.用g·b_p=±2/3或±1/3作为不全位错是否显示衍衬是可行的,但不够严格。为此,应尽量选择{220}或{311}类型衍射成像,这时g·b_p或者等于零,或者等于整数,比较容易确定不全位错的柏氏矢量。2.共格孪晶界面上有不全位错,大多数是全位错分解的产物,成对出现。3.平行滑移面上的层错在运动中可以相互重迭。重迭层错中内禀层错与外禀层错之间的不全位错,在g·b_p=±2/3时无衍衬(在层错条纹的较强背景下是亮线),而在g·b_p=±1/3时显示衍衬(暗线)。 关键词：     

Lattice imperfection studies in polycrystalline materials by x-ray diffraction line-profile analysis

This review concerns our recent investigations with a series of binary fcc Ag- and Cu-base alloys (viz Ag-Ga, Ag-Ge, Ag-Al and Cu-Ga, Cu-Ge) from detailed analyses of x-ray diffraction line profiles, the importance of which has been briefly summarized. The theoretical formulations of the Warren-Averbach’s method of Fourier analysis of peak-shapes along with the methods of peak-shift and peak-asymmetry have been outlined. A preview on the significant studies carried out earlier with Ag- and Cu-base (fcc) binary alloys has been made in short. A detailed analyses on the recorded profiles in the present considerations revealed, in general, quantitative estimates of several microstructural parameters characterising the deformed state of the materials namely, propensity of stacking faults (intrinsic, extrinsic and twin faults), rms microstrains, coherent domain sizes, long-range residual stresses, lattice parameter changes, dislocation density and stacking fault energy. The results indicate a general trend of increase in the concentrations of stacking faults, primarily, of intrinsic character, with increase in solute concentrations; which are solely responsible for the observed peak-shifts as well as domain size broadening. Small asymmetry in the profiles is due to the presence of extrinsic stacking faults, relatively less in magnitude compared to the intrinsic ones while the deformation twin faults are almost absent—an observation with significance. The dislocation density, quite appreciable in magnitude, has been evaluated from the anisotropic values of the coherent domain sizes and rms microstrains. The stacking fault energies of pure Ag and Cu, an important parameter have also been estimated and compared with those obtained from electron microscopy. Annealing experiments with a Ag-5·8% Al alloy, aluminium being a precipitating solute, do not reveal any detectable evidence of solute segregation at the stacking faults. The occurrence of stacking faults in the alloy systems has been correlated with a number of physical factors involving solvent-solute types.