Transport in superlattices of magnetic nanoparticles: coulomb blockade, hysteresis, and switching induced by a magnetic field

We report on magnetotransport measurements on millimetric superlattices of Co-Fe nanoparticles surrounded by an organic layer. At low temperature, the transition between the Coulomb blockade and the conductive regime becomes abrupt and hysteretic. The transition between both regimes can be induced by a magnetic field, leading to a novel mechanism of magnetoresistance. Between 1.8 and 10 K, a high-field magnetoresistance attributed to magnetic disorder at the surface of the particles is also observed. Below 1.8 K, this magnetoresistance abruptly collapses and a low-field magnetoresistance is observed.     

Magnetic and magneto-transport properties of (Ba0.8Sr0.2)2−xNdxFeMoO6

The variation in structural, magnetic and magneto-transport properties of the double perovskite system (Ba_0.8Sr_0.2)_2?xNd_xFeMoO₆ {0.0<X<0.5} induced by Nd³⁺ doping (electron doping) has been studied and compared. The samples were prepared by standard solid state reaction method in a reducing atmosphere. The parent compound showed a saturation magnetic moment value of 3.75 μ_B/f.u. at an applied field of 0.5 T and a change in magnetoresistance value up to 26% (77 K, 0.8 T). The Rietveld refinement of the X-ray diffraction data showed a continuous decrease in lattice parameters and Fe–Mo ordering with increasing Nd³⁺ doping. The Curie temperature was found to increase with Nd³⁺ doping (3 K per % of Nd) while the saturation magnetic moment values and magnetoresistance values were found to decrease. The observed variations in magnetic and magneto-transport properties of the system are explained on the basis of increasing antisite disorder defects and band filling effects induced by electron doping. We have observed the dominant role of band filling in determining the low field magnetoresistance of these systems.     

Antiferromagnetic order and phase coexistence in a model of antisite disordered double perovskites

In addition to the well known ferromagnetism, double perovskites are also expected to exhibit antiferromagnetic (AF) order driven by electron delocalisation. This has been seen in model Hamiltonian studies and confirmed via ab initio calculations. The AF phases should occur, for example, on sufficient electron doping of materials like Sr₂FeMoO₆ (SFMO) via La substitution for Sr. Clear experimental indication of such AF order is limited, possibly because of increase in antisite disorder with La doping on SFMO, although intriguing signatures of non ferromagnetic behaviour are seen. We study the survival of electronically driven antiferromagnetism in the presence of spatially correlated antisite disorder in a two dimensional model and extract the signals in magnetism and transport. We discover that A and G type AF order, that is predicted in the clean limit, is actually suppressed less strongly than ferromagnetism by antisite disorder. The AF phases are metallic, and, remarkably, more conducting that the ferromagnet for similar antisite disorder. We also highlight the phase coexistence window that connects the ferromagnetic regime to the A type antiferromagnetic phase, and comment on the situation in three dimensions.     

晶粒尺寸对La0.83Na0.17Mn0.90Fe0.10O3磁性和输运性质的影响

本文研究了纳米相和体相多晶样品La5/6Na1/6Mn0.90Fe0.10O3的结构、磁性和输运性质.XRD谱图表明两样品都是单相的钙钛矿结构.随着晶粒尺寸的减小晶粒表面处的自旋无序增多,使居里温度降低,同时使自旋相关电子在晶界处的散射增强,提高了材料电阻率.纳米粒子的尺寸效应提高了材料的低场磁电阻;晶粒表面自旋无序的增多使电子在晶粒表面的二阶隧道效应增强,提高了高场磁电阻效应.零场电阻率的拟合结果也表明晶粒尺寸的减小使自旋无序增加.     

Mini-gaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices

We have studied the temperature dependence of the magnetoresistance of semimetallic InAs/GaSb structures with magnetic field applied parallel to the layers. We present the first unambiguous evidence for the presence of a mini-gap at the crossing point between the electron and hole dispersion relations. The resistivity is found to change from semiconductor-like behaviour with a strong temperature dependence at low parallel magnetic fields to that of a semimetal with a weak temperature dependence at high field. Furthermore, the magnetoresistance, for intrinsic samples, is found to decrease with field by as much as 70% at low temperatures. As the parallel magnetic field is increased the centres of the electron and hole dispersions are shifted apart in k-space and at sufficiently high field the mini-gap is destroyed and the bands overlap fully. Finally, a theoretical model allows us to estimate that the mini-gap is of order 7 meV.     

Observation of large low‐field magnetoresistance in spinel cobaltite: A new half‐metal

Low‐field magnetoresistance is an effective and energy‐saving way to use half‐metallic materials in magnetic reading heads and magnetic random access memory. Common spin‐polarized materials with low field magnetoresistance effect are perovskite‐type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self‐assembled nanocrystalline NiCo₂O₄, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin‐glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half‐metallicity of NiCo₂O₄ comes from the hopping e_g electrons within the tetrahedral Co‐atoms and the octahedral Ni‐atoms. The discovery of large low‐field magnetoresistance in simple spinel oxide NiCo₂O₄, a non‐perovskite oxide, leads to an extended family of low‐field magnetoresistance materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal

The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions, and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V_1-δSb₂ single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of a weak antilocalization effect (WAL). In addition, based upon the experimental and theoretical band structure calculations, V_1-δSb₂ is a research candidate for a flat band.     

Intergranular magnetoresistance in Sr2FeMoO6 from a magnetic tunnel barrier mechanism across grain boundaries

We present magnetization (M) and magnetoresistance (MR) data for a series of Sr2FeMoO6 samples with independent control on antisite defect and grain-boundary densities, which reveal several unexpected features, including a novel switching-like behavior of MR with M. These, in conjunction with model calculations, establish that the MR in Sr2FeMoO6 is dominantly controlled by a new mechanism, derived from the magnetic polarization of grain-boundary regions acting like spin valves, leading to behavior qualitatively different from that usually encountered in tunneling MR. We show that a simple and useful experimental signature for the presence of this spin-valve-type MR (SVMR) is a wider hysteresis in MR compared to that in M.     

Magnetoresistance of Electrons Channelled by Microscopic Magnetic Field Modulation

We report the magnetoresistance of two-dimensional electron gas, which is made of GaAs based epitaxial mul-tilayers and laterally subjected to a periodic magnetic field. The modulation field is produced by an array of submicrometre ferromagnets fabricated at the surface of the heterostructure. The magnetoresistance of about 20% is found at low temperature 80K. The measurement is in quantitative agreement with semiclassical simulations, which reveal that the magnetoresistance is due to electrons trapped in snake orbits along lines of zero magnetic field.     

Magnetoresistive effect in RCu<Subscript>3</Subscript>Mn<Subscript>4</Subscript>O<Subscript>12</Subscript> perovskite-like oxides

The electrical properties of and the magnetoresistive effect in RCu₃Mn₄O₁₂ (R=rare-earth ion or Th) are studied. In all compounds of this series, the magnetoresistive effect amounts to 20% at liquid nitrogen temperature in the presence of a field of 0.9 T. An increase in the magnetoresistance with decreasing temperature and a high sensitivity to weak magnetic fields at low temperatures point to the intergranular nature of the effect. The magnetoresistance shows a peak in the vicinity of the Curie temperature T_C. Based on the dependences of the magnetoresistance on an external magnetic field, it is assumed that the magnetoresistance peak near T_C is related to the charge carrier scattering by magnetic inhomogeneities as in substituted orthomanganites. We believe that the magnetoresistance value near the magnetic ordering temperature depends on the synthesis conditions and the effect of the intergranular spacer on the transport properties of these compounds.     

Enhanced magnetoresistance induced by spin transfer torque in granular films with a magnetic field

Spin-transfer torques (STT) provide a mechanism to alter the magnetic configurations of magnetic heterostructures, a result previously only achieved by an external magnetic field. In granular solids, we demonstrate a new form of STT effect that can be exploited to induce a large spin disorder when combined with a large magnetic field. We have obtained a very large magnetoresistance effect in excess of 400% at 4.2 K in a large magnetic field, the largest ever reported in any metallic systems. The STT characteristics of granular solids differ significantly from those of multilayers, showing no STT effect at low magnetic fields but prominent STT effects at high fields.     

Observation of large magnetic resistance in weak magnetic fields using CuPt/SiO2/Si/SiO2/CuPt structure

The magnetoresistive effect of CuPt(8 nm)/SiO₂(5 nm)/Si(50,000 nm)/SiO₂(5 nm)/CuPt(8 nm) structure made by e-beam evaporation technique is studied in this work. Variation in magnetoresistance obtained by I-V measurements at 77 K and in the presence of less than 5 mT magnetic field applied in parallel to the surface is investigated. We have found that this structure exhibit large magnetoresistance in low magnetic fields (i.e. <5 mT). Our results also indicate that the variation in magnetoresistance in the presence of external magnetic field has oscillatory behavior and has the maximum value of 3295%. This structure due to its high sensitivity to low magnetic fields can also be used as an active element in magnetic field sensor devices.     

Crystal-field effect on the magnetic properties of the degenerate Anderson model

By means of the Bethe ansatz method, the magnetic properties of the highly correlated degenerate Anderson model at low temperatures are investigated in the presence of the crystalline field. The magnetization, the magnetoresistance and the linear coefficient of the specific heat are calculated as a function of the magnetic field in the mixed valence regime for the case of Ce in the cubic field.     

Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization

We present the magnetoresistance measurements of ultrathin Mn5Ge3 films with different thicknesses at low temperatures. Owing to the lattice mismatch between MnsGe3 and Ge （111）, the thickness of MnsGe3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers （MLs）, the magnetoresistance of the Mn5 Ge3 films appears a peak at about 6 kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5 Ge3 film is a potential material for spin injection.     

Band-gap tuning and linear magnetoresistance in the silver chalcogenides

Optimally doped silver selenide and silver telluride exhibit linear positive magnetoresistance over decades in magnetic field and on a scale comparable to the colossal magnetoresistance compounds. We use hydrostatic pressure to smoothly alter the band structure of Ag-rich and Ag-deficient samples of semiconducting Ag(2 +/-delta)Te of fixed stoichiometry and disorder. We find that the magnetoresistance spikes and the linear field dependence emerges when the bands cross and the Hall coefficient changes sign.     

Study of field dependence of magnetoresistance of polycrystalline perovskite manganites

The field dependence of magnetoresistance in polycrystalline perovskite manganites is studied. It is found that there are two kinds of conduction channels. One is insulating channel, in which the spin-polarized tunneling affects the magnetotransport, the other is metallic, where the spin-dependent scattering dominates. The increase of metallic channels in the high external magnetic field, which is due to the reorientation of disorder spins at the interface, is assumed determinant to the continuous decrease of resistance. Within our theoretic model, the magnetoresistance of the systems with different grain size and different intergrain connectivity can be well explained. Our calculations agree with the experimental data well.     

Effect of disorder on the electronic structure of the double perovskite Sr2FeMoO6

Recently, Sr₂FeMoO₆ has been established as a new colossal magnetoresistance material with substantial low-field magnetoresistance at room temperature and has attracted much attention in the double perovskite family. This material always appears with a certain degree of miss-site disorder where Fe and Mo interchange their positions. Using renormalized perturbation expansion, we calculate the density of states and determine the variation of the critical temperature in the low disorder regime.     

Description of the Colossal Magnetoresistance of La 1.2 Sr 1.8 Mn 2 O 7 Based on the Spin-Polaron Conduction Mechanism in the Ferromagnetic Temperature Range

We have analyzed the resistance of La1.2Sr1.8Mn2(1 – z)O7 single crystal in magnetic fields from 0 to 90 kOe in the ferromagnetic temperature range. The observed magnetoresistance of La1.2Sr1.8Mn2O7 is described based on the spin-polaron conduction mechanism. The magnetoresistance is determined by the change in the sizes and magnetic moment directions of magnetic inhomogeneities (polarons). It is shown that the colossal magnetoresistance is ensured by an increase (along the magnetic field) of the polaron linear size. It is found using the method for separating the contributions of different conduction mechanisms to the magnetoresistance that the contribution to the magnetoresistance from the orientation mechanism at 80 K in low magnetic fields is close to 50%. With increasing magnetic field, this contribution decreases and becomes small in fields exceeding 30 kOe. The comparable contributions to the conductivity from the orientational and spin-polaron mechanisms unambiguously necessitate the inclusion of both conduction mechanisms in the magnetoresistance calculations. We have calculated the temperature variation of the polaron size (in relative units) in zero magnetic field and in a magnetic field of 90 kOe.     

Exponential suppression of interlayer conductivity in very anisotropic quasi-two-dimensional compounds in high magnetic field

It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is developed to describe this effect, and the calculation of the temperature and field dependence of interlayer magnetoresistance is performed. The results obtained agree well with the experimental data in GaAs/AlGaAs heterostructures and in strongly anisotropic organic metals. The proposed theory allows to use the experiments on interlayer magnetoresistance to investigate the electron states, localized by magnetic field and disorder.     

Negative magnetoresistance in the regime of hopping conduction through <Emphasis Type="Italic">p</Emphasis> states at quantum dots

The magnetoresistance in the system of quantum dots with hopping conduction and filling factor 2 < ν < 3 in the limit of small quantum dots has been considered. In this case, hopping conduction is determined by p states. It has been shown that the system exhibits negative magnetoresistance associated with a change in the wavefunctions of p states in a magnetic field. This mechanism of magnetoresistance is linear in magnetic field in a certain range of fields and can compete with the known interference mechanism of magnetoresistance. The magnitude of this magnetoresistance is independent of the temperature at fairly low temperatures and increases with a decrease in the size of a quantum dot.