Magnetoresistance of single Co nanowires

Polycrystalline single Co nanowires are prepared by electron beam lithography on GaAs substrates at room temperature. The width of the Co nanowires is varied between 150 and 4000 nm. Magnetoresistance measurements are carried out in a temperature range between 1.5 and 45 K applying magnetic fields μ₀H up to 4.5 T parallel and perpendicular to the current direction. The in plane (longitudinal) magnetoresistance (MR) shows pronounced features at magnetic fields H_c (coercive fields) indicating the magnetization reversal process. From the MR-curves we determined H_c as a function of the angle α between current and field direction (from in plane to out of plane) and of the width w of the Co nanowires. The H_c=H_c(α,w) behavior allows to discuss the reversal process in more detail.     

Monte Carlo simulations concerning zero field host NMR in aCuMn spin glass

Own recent Monte Carlo calculations have been improved and extended. A three dimensionalCuMn spin glass with 3 at % Mn has been simulated. 6.912 lattice points and 207 classical Heisenberg spins with have been employed. Only RKKY and dipole interaction are introduced. For both interactions experimentally measured values of coupling strengths at 18 discrete near neighbour sites have been used. The distribution of hyperfine fieldsH _L at host nuclei sites and the distribution of exchange fieldsH _j for Mn spins have been calculated. Anisotropy fields of a field cooled sample have been evaluated beingH _a=1.0 kOe (H _c=2.5 kOe);H _a=0.7 kOe (H _c=5.5 kOe) andH _a=0.5 kOe (H _c=7.5 kOe). Two complete hysteresis cycles of two different statistical alloys were calculated showing both a sharp magnetization step one atH _d=–0.36 kOe and the other atH _d=–0.19 kOe. The details of spin orientation during a hysteresis cycle have been viewed. For small external fields the calculations are in favour of Allouls one domain model. The magnetization step occurs within the system of single spins. The magnetization of clusters remains constant during the whole hysteresis cycle. The calculations of the NMR enhancement factor are in general agreement with experiment.Tempelmann, C., Brömer, H.: Europhysics Conference Abstracts 9A, PWc-6-117 (1985)     

Epitaxial growth of ZnSiN2 single-crystalline films on sapphire substrates

A new family of wide band gap nitride semiconductors expressed as II–IV-N₂ have recently attracted attention due to their expected properties such as optical non-linearity. In addition, among these compounds, ZnGeN₂ and ZnSiN₂ have lattice parameters close to GaN and SiC respectively. Up to now, there is very little work reported on this class of materials and no systematic thin film growth study has been reported to date. In this paper we present the first study on the growth of ZnSiN₂ on c-sapphire and (100) silicon substrates using low pressure MOVPE technique. Triethylamine:dimethylzinc adduct, silane diluted in H₂ and ammonia were used as source materials. Single crystalline epitaxial ZnSiN₂ layers were obtained on nitridated c-sapphire substrates in the temperature range 873–973 K by using an adapted II/IV molar ratio ranging from 1.2 to 12. Assuming an orthorhombic unit cell, the lattice parameters calculated from the X-ray diffraction data are a=0.534 nm, b=0.617 nm and c=0.504 nm.     

Enhancement of low-field magnetoresistance in Fe3O4 particles induced by ball milling

A series of Fe₃O₄ particles with different size have been obtained by mechanical ball milling from t=0-450 h. Crystal structure and microstructure of the samples are analyzed by XRD and SEM. An emphasis has been placed on magnetic and transport properties. The experimental results indicate that the sample t=350 exhibits an enhancement of magnetoresistance (MR) comparing with initial powder compress sample (t=0). The low-field magnetoresistance reaches MR=−6.04% at Verwey temperature 120 K and MR=−2.54% at 290 K. Thermal behavior TGA analysis and investigation of magnetic properties have revealed that there is an oxide layer on surface of Fe₃O₄ particles. It is considered that the enhanced magnetoresistance can be taken into account in terms of spin-dependent tunneling effect between Fe₃O₄ particles.Temperature dependence of magnetization and resistivity are measured in order to study electrical and magnetic behavior near Verwey transition. In addition, we also discuss ball milling time dependence of coercivity H_c and specific magnetization M_s of these samples.     

Fabrication and magnetic characterization of Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Pt<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> nanowire arrays

Co _x Pt_1−x (x≥0.7) alloy nanowires are grown into self-synthesized anodic alumina templates by electrodeposition. Magnetic and magnetization properties of Co _x Pt_1−x alloy nanowires are measured as functions of wire length, temperature, and field orientation. X-ray diffraction shows that as-prepared CoPt nanowires are of fcc polycrystalline structure. A crossover of easy axis of magnetization is observed from parallel to perpendicular of the nanowire axis as a function of length. The coercivity (H _c) and remanent squareness (SQ) of Co _x Pt_1−x nanowire arrays are derived from hysteresis loops measured at various angles (θ) between the field and wire axis. H _c(θ) and SQ(θ) curves show bell-shaped or otherwise bell-shaped behavior corresponding to the easy axis of their magnetization.     

Enhancement of field emission of SnO2 nanowires film by exposure of hydrogen gas

The effect of hydrogen (H₂) gas exposure on the field emission properties of tin oxide (SnO₂) nanowires films synthesized by the carbon thermal reduction vapor transport method was investigated. The exposure of H₂ gas results in the reduction of the turn-on voltage for driving a current of 10 nA from 7.6 V/μm to 5.5 V/μm and the increase of the field current based on 10 V/μm from 0.47 μA to 2.1 μA. The Fowler–Nordheim plot obtained from the current–voltage data supports that the field emission enhancement of SNW film is attributed to the reduction of the work function by the H₂ exposure.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

A new method for increasing the laser damage threshold of metal mirrors

In order to increase the damage threshold of metal mirrors we propose to create a special structure on the surface of the mirrors (“photonic surface”). This structure must have the period about λ/2 and will suppress propagation of surface plasmons with the frequency ω₀=2πc/λ along the surface. This structure will also slightly increase the heat removal from the mirror’s surface by the excitation of the thermostimulated plasmon emission from the surface. The heat removal from the surface is estimated and possible implementation of this approach for use with CO₂-lasers (λ=10.6 μm) and Nd-YAG-lasers (λ=1.06 μm) is analyzed.     

Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates

Amorphous silicon oxide (SiO_x) nanowires were directly grown by thermal processing of Si substrates. Au and Pd–Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiO_x nanowires was achieved by a simple heating process (1000–1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiO_x nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid–liquid–solid model of nanowire formation was shown to be valid.     

X-ray superstructure determination of ordered oxygen and Cu-displacements in a single domain of YBa2Cu3O6.35

The superstructure of ordered oxygen atoms in a single domain of YBa₂Cu₃O_6.35 has been determined by X-ray diffraction. The 45^o rotated superstructure cell is orthorhombic—spacegroup Pbam, lattice constants , witha=3.8652(3) Å,c=11.815(2)Å the dimensions of the fundamental tetragonal cell. The arrangement of the oxygen atoms in the basal plane minimizes their electrostatic repulsion by avoiding near and next-near neighbors. There are displacements of copper atoms of 0.13 Å in the Cu(1) plane and 0.06 Å in the Cu(2) plane. Only 12% of the oxygen atoms in the basal plane contribute to the superstructure.     

Magnetic behavior of amorphous Sm-Co alloy films

Amorphous films of Sm_100–x Co _x with 70x90 were made by vapor deposition on flat glass substrates kept at 300 K. The films crystallize above 700 K. The film plane is the easy plane with the planar anisotropy of the order of 10⁷ erg cm^–3, indicating a local anisotropy of the order 10⁸ erg cm^–3. With regard to local anisotropy and magnetization, the films appear to correspond to the random anisotropy concept of amorphous magnets. Films evaporated in a magnetic field parallel to the film plane have an induced uniaxial anisotropy of the order of 10⁶ erg cm^–3. Hysteresis loops in fields parallel to the easy axis are perfectly rectangular with coercive fieldsH _c in the range 30 Oe<H _c<3000 Oe, depending on composition, temperature and heat treatment. The magnetization reverses by a thermally activated domain nucleation and growth process having a narrow distribution of time constants. Aging at temperatures below the crystallization temperature reduces the anisotropies andH _c.     

The Ising Model on a Quenched Ensemble of c=−5 Gravity Graphs

We study with Monte Carlo methods an ensemble of c=–5 gravity graphs, generated by coupling a conformal field theory with central charge c=–5 to two-dimensional quantum gravity. We measure the fractal properties of the ensemble, such as the string susceptibility exponent _s and the intrinsic fractal dimension d _H. We find _s=–1.5(1) and d _H=3.36(4), in reasonable agreement with theoretical predictions. In addition, we study the critical behavior of an Ising model on a quenched ensemble of the c=–5 graphs and show that it agrees, within numerical accuracy, with theoretical predictions for the critical behavior of an Ising model coupled dynamically to two-dimensional quantum gravity, with a total central charge of the matter sector c=–5.     

Interaction of oxovanadium(IV) with carboxylic ligands in aqueous solution: A thermodynamic and visible spectrophotometric study

The hydrolysis of VO²⁺ and the complex with sulfate were studied potentiometrically, spectrophotometrically and calorimetrically, in NaCl aqueous solution (0 < I ≤ 1 mol L^− 1) and at t = 25 °C. The formation of two hydrolytic species VO(OH)⁺ and VO₂(OH)₂²⁺ and one complex with sulfate was found, with log β = − 5.65 for the reaction VO²⁺ + H₂O = VO(OH)⁺ + H⁺, log β = − 7.02 for the reaction 2VO²⁺ + 2H₂O = (VO)₂(OH)₂²⁺ + 2H⁺ and log K = 1.73 for VOSO₄⁰ species (at I = 0.1 mol L^− 1 and t = 25 °C). For these species, using calorimetric data, ΔH and TΔS values were also obtained. By using the above values, interactions of VO²⁺ with acetate (ac), malonate (mal), succinate (suc), 1,2,3-propanetricarboxylate (tca) and 1,2,3,4-butanetetracarboxylate (btc) ligands were studied potentiometrically and spectrophotometrically. The formation of ML⁺, ML₂⁰ and MLOH⁰ for ac; ML⁰, MLH⁺, ML₂²⁻ and ML₂H⁻ for mal; ML⁰, MLH⁺ and MLOH⁻ for suc; ML⁻ and MLH⁰ for tca and ML²⁻, MLH⁻ and MLH₂⁰ for btc were found. Formation constants are reported at I = 0.1 mol L^− 1, together with SIT parameters for the dependence on ionic strength. By visible spectrophotometric measurements, λ_max and ε_max values for the relevant species in solution were determined.     

Paramagnetic resonance of the (Cr5+O4)H2 Halperin-Varma center in NH4H2AsO4 and KH2AsO4

The electron paramagnetic resonance (EPR) spectrum of Cr⁵⁺(3d ¹,S=1/2) in undeuterated and 58%-deuterated NH₄H₂AsO₄ was investigated. The EPRg-value tensors in the paraelectric and antiferroelectric phases are almost the same as those observed at high and low temperatures in KH₂PO₄ and KH₂AsO₄. This shows that the (Cr⁵⁺O₄)H₂ complex is the same in all crystals, i.e., a wave function ofd _x ²–y ² character coupled to two lateral protons which reorient among the four possible Slater configurations in the paraelectric phase. The remarkable isotope shift of the local dynamic reorientational slowing-down observed in KH₂PO₄ and KH₂AsO₄ in approximate proportion to the shift of the bulk ferroelectric transition temperaturesT _c ^F , and the antiferroelectricT _c ^AF of NH₄H₂AsO₄, is analyzed qualitatively. It is shown to result mainly from the isotope effect of the short-range interactionJ _sr via protons and deuterons for the impurity and for the bulk. Q-band data of the (Cr⁵⁺O₄)H₂ center in 75%-deuterated KH₂AsO₄ are also reported. An averaged high- and nonaveraged low-temperature EPR spectrum is observed in a temperature range of 250 to 290 K. The intensity ratio of the two follows an exp 2(T—T)/ law over four orders of magnitude atT=266 to 273 K and=5.3 to 6.1 K depending on the orientation of the external magnetic field. This novel result in motional narrowing is analyzed analytically to be compatible with a distributionP _A of ₀(T, T, ) of half width, in reorientation times withE=0.23 ±0.02 eV, , probably resulting from the statistical occupation of deuterium atoms among the O—–H–O bridges. Comparison with a theory of Binder definitely proves the extrinsic slowing-down and thus Halperin-Varma type character. In the range of temperatures investigated no local freeze-out has been detected.     

Anisotropic magnetoresistance in the normal state of oxygen-deficient YBa2Cu3O7−δ thin films induced by superconducting fluctuations

We have investigated both the transverse and the longitudinal magnetoresistance of oxygen-deficient YBa₂Cu₃O_7– thin films above their critical temperatureT _c =55 K. The magnetoresistance is solely caused by the magnetic-field suppression of superconducting orderparameter fluctuations, existing in the films up to 143 K, i.e. 2.6T _c . The fluctuation effect provides a reliable determination of the Ginzburg-Landau coherence lengths, _ab = 2.5 nm and _c = 0.09 nm, with the anisotropy enhanced by oxygen depletion. No signature of the Maki-Thompson fluctuation process or a magnetoresistance resulting from the cyclotron motion of the normalstate quasiparticles was found.     

Structural characterization of ZnO/ Er2O3 core/shell nanowires

Zinc oxide/erbium oxide core/shell nanowires are of great potential value to optoelectronics because of the possible demonstration of laser emission in the 1.5 μm range. In this paper we present a convenient technique to obtain structures of this composition. ZnO core nanowires were first obtained by a vapor–liquid–solid (VLS) method using gold as a catalyst. ZnO nanowires ranging from 50 to 100 nm in width were grown on the substrates. Erbium was incorporated into these nanowires by their exposure to Er(tmhd)₃ at elevated temperatures. After annealing at 700 C in air, the nanowires presented 1.54 μm emission when excited by any of the lines of an Ar⁺ laser. An investigation of nanowire structure by HRTEM indicates that indeed the cores consist of hexagonal ZnO grown in the 001 direction while the surface contains randomly oriented Er₂O₃ nanoparticles. EXAFS analysis reveals that the Er atoms possess a sixfold oxygen coordination environment, almost identical to that of Er₂O₃. Taken collectively, these data suggest that the overall architectures of these nanowires are discrete layered ZnO/ Er₂O₃ core/shell structures whereby erbium atoms are not incorporated into the ZnO core geometry.     

Low density flux fluids in high —T c superconductors: The influence of disorder

We analyze the influence of thermal and frozen-in disorder on the flux line (FL) density close to the lower critical fieldH _c1. Arguments which consider the steric repulsion of fluctuating FLs give with the roughness exponent of a single FL andd the space dimensionality. We show by a phenomenological scaling approach and a renormalization group treatment, that this is correct only fordd _c =2/–1, i.e. for . Ford>d _c the steric FL repulsion at scales more than some critical one is irrelevant and . For disordered superconductorsd _c =2 and ford=2, 3. We also found the melting line for a FL lattice in the presence of frozen-in impurities close toH _c1.     

Instability of the molecular structure of monobenzoporphin to the alternation of the macrocycle bond lengths and its manifestation in the electronic spectra

Quantum-chemical calculations of the geometric structure of the molecules of monobenzoporphin (H₂ MBP) and monobenzoporphin with methyl and ethyl substituents in the five-member rings (H₂MBPm) have been carried out by the restricted and unrestricted Hartree-Fock methods with the AM1 Hamiltonian (AM1 RHF and AM1 UHF methods). The calculation of the above-indicated molecules by the AM1 RHF method without restrictions on their symmetry has given, for them, a planar structure with an alternation of the lengths of the bonds along the 18-member azacyclopolyene and the symmetry C _1h for their aromatic part. The calculation of the transitions to the excited electron Q states in such a structure by the CNDO/S method has shown that these states are characterized by large hypsochromic shifts (~3000–4000 cm^–1 ) relative to the Q levels of porphin (H₂P), which is in contradiction with the experimental data, according to which these shifts are bathochromic and comprise = –330 cm ^–1 and = –750 cm^–1. Optimization of the geometry of the H₂ MBP and H₂MBPm molecules by the AM1 UHF method gives, for them, a structure with equal lengths of the bonds along the 18-member azacyclopolyene with a symmetry differing insignificantly from the D _2h symmetry; elements of the structure with a lower symmetry and an alternation of the lengths of the bonds are retained in the condensed pyrrolenine and benzene rings. The calculation of the shifts of the Q levels in the H₂MBPm molecule of this geometry relative to the analogous levels in H₂P has shown that they are bathochromic and equal to = –520 cm^–1, and the RHF calculation with optimization of the geometry of the molecule and restrictions on the effective symmetry D _2h of the 18-member azacyclopolyene has given = –350 cm^–1 and = –430 cm^–1. The restrictions imposed on the C ₂ symmetry of the H₂MBP molecules by the RHF method are inadequate to equalize the lengths of the bonds along the 18-member azacyclopolyene. The calculations of the energy of the B levels of the monobenzoporphyrins considered also lend credence to their geometric structure with equal lengths of the bonds along the 18-member azacyclopolyene.Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 71, No. 6, pp. 712–721, November–December, 2004.This revised version was published online in April 2005 with a corrected cover date.     

Atomic layer deposition and characterization of Ga-doped ZnO thin films

Low-resistivity n-type ZnO thin films were grown by atomic layer deposition (ALD) using diethylzinc (DEZ) and H₂O as Zn and O precursors. ZnO thin films were grown on c-plane sapphire (c- Al₂O₃) substrates at 300 C. For undoped ZnO thin films, it was found that the intensity of ZnO () reflection peak increased and the electron concentration increased from 6.8×10¹⁸ to 1.1×10²⁰ cm⁻³ with the increase of DEZ flow rate, which indicates the increase of O vacancies () and/or Zn interstitials (Zn_i). Ga-doping was performed under Zn-rich growth conditions using triethylgallium (TEG) as Ga precursor. The resistivity of 8.0×10⁻⁴ Ω cm was achieved at the TEG flow rate of 0.24 μmol/min.     

Some physical properties of KCl+Pb2+ crystals

This paper presents the results of measurements of the mechanical and electrical properties of as-received pure and lead-doped crystals of potassium chloride. The critical resolved shear stress of the crystals obeys the Franks relationship in the whole concentration range. In addition, the correlation between ₀ and the Vickers hardness numberH was found and the equation is of the form ₀=k (H–H ₀). The solubility of Pb²⁺ in as-received KCl crystals was observed, from measurements of the electrical conductivity, to be low—the successive saturation of the solid solution started already in an environment of 5 mole ppm in agreement with data from the mechanical measurements. The density of cation vacancies and their mobility were represented by the following euqations ₁ T=6·25×10⁴ exp(–·75/kT) cm² K/volt. sec,n ₁=6·95×10²³ exp(–2·12/kT) vacancies/cm³ The value of 0sd46±0·02 eV was found as a rough estimate of the association energy.The authors wish to express their thanks to Professor Dr. J. Z.Damm and Ing. E.Mariani for their stimulating interest in the present work.