Tight-binding studies of surface effects on electronic structure of CdSe nanocrystals: the role of organic ligands, surface reconstruction, and inorganic capping shells

We utilize a tight-binding model to study the effects of surface structure on electronic properties of CdSe clusters. The model takes into account experimental information about structure and shape of the nanocrystals, as well as the nature and distribution of capping ligands. The effects of both organic capping ligands and inorganic capping shells on the densities of states (DOS) and on the single-particle absorption spectra of the clusters are calculated for various cluster shapes and sizes, and are compared to results for clusters with truncated surfaces. For organic capping ligands, the effect of ligand hybridization is investigated and a simple model of surface reconstruction is developed. Both ligand hybridization and surface reconstruction are seen to have a major influence on the band edge electronic and optical properties. Inorganic capping shells give rise to differential localization of valence and conduction band edge states, with the hole primarily confined to the core region and the electron more evenly distributed over both core and shell. Received 21 September 1998 / Received in final form: 15 December 1998     

Structure and spectroscopy of surface defects from scanning force microscopy: theoretical predictions

A possibility to study surface defects by combining noncontact scanning force microscopy (SFM) imaging with atomically resolved optical spectroscopy is demonstrated by modeling an impurity Cr3+ ion at the MgO(001) surface with a SFM tip. Using a combination of the atomistic simulation and the ab initio electronic structure calculations, we predict a topographic noncontact SFM image of the defect and show that its optical transitions can be either enhanced or suppressed depending on the tip atomistic structure and its position relative to the defect. These effects should allow identification of certain impurity species through competition between radiative and nonradiative transitions.     

First principle study of free and surface terminated CdTe nanoparticles

Density functional calculations of structural and electronic properties of stoichiometric and nonstoichiometric CdTe clusters, containing up to few tens of atoms, are carried out using projector augmented wave method. Molecular dynamics has been performed for Cd₁₂Te₁₂ and Cd₁₅Te₁₅ to predict the structure corresponding to global energy minimum. Cage type structures and bulk fragments, both in zinc blende and wurtzite structures, are used as starting geometries and conjugate gradient method is used to locate the local energy minima for other clusters. The aim of these calculations is to get the energetically favorable probable structures, to be compared with the experimentally known structures. Clusters are relaxed both in vacuum and in the presence of surface passivating ligands and the resulting structural rearrangement is analyzed. As expected, passivation increases the stability of an individual cluster, as indicated by specific properties like binding energy, vertical detachment energy, electron affinity etc. Passivation also locks the symmetry for three-dimensional structures but the small Cd_nTe_n (1 ≤ n ≤ 6) clusters, which are planar, attain higher symmetry structures on passivation. We observe `self-healing' mechanism viz., opening of optical gap on relaxation without the aid of passivating ligand, in CdTe clusters as observed in CdSe clusters [A. Puzder et al., Phys. Rev. Lett. 92, 217401 (2004)]. However, we note that 'self-healing' is a stoichiometry dependent phenomenon. Te atoms are found to achieve a total coordination of 4 on passivation, a fact useful in chemical synthesis of nanoclusters.     

Correlation effects on optical properties of TbOFeAs

Based on local density approximation and Hubbard-U corrections (LDA+U), we study the influence of Coulomb interaction for Tb 4f states on the optical properties of the recently discovered superconductor, such as TbOFeAs. Within the incorporation of onsite Hubbard effect in TbOFeAs, we discuss the electronic structure, as well as the optical spectra and we compared them to LDA calculations. For non-magnetic (NM) configuration, the electronic structure exhibits high density of states, N(E _F ) in the proximity of Fermi level. With and without the electronic correlation effects, we carried out the calculations for the optical properties such as the optical conductivity, joint density of states (JDOS), optical absorption, the electron energy loss function and reflectivity of TbOFeAs in a large photon energy scale of 30 eV. Despite the absence of a Mott insulator transition, we infer that the electronic correlation effects are prominent in the recently discovered superconductor, like TbOFeAs. We also predict the in-plane anisotropy of plasma frequency that has been evaluated recently in the other ReOFeAs systems.     

Electronic and Spectral Properties of RRhSn (R = Gd,Tb) Intermetallic Compounds

The investigations of electronic structure and optical properties of GdRhSn and TbRhSn were carried out. The calculations of band spectrum, taking into account the spin polarization, were performed in a local electron density approximation with a correction for strong correlation effects in 4f shell of rare earth metal (LSDA + U method). The optical studies were done by ellipsometry in a wide range of wavelengths, and the set of spectral and electronic characteristics was determined. It was shown that optical absorption in a region of interband transitions has a satisfactory explanation within a scope of calculations of density of electronic states carried out.     

Structural stability and optical properties of nanomaterials with reconstructed surfaces

We present density functional and quantum Monte Carlo calculations of the stability and optical properties of semiconductor nanomaterials with reconstructed surfaces. We predict the relative stability of silicon nanostructures with reconstructed and unreconstructed surfaces, and we show that surface step geometries unique to highly curved surfaces dramatically reduce the optical gaps and decrease excitonic lifetimes. These predictions provide an explanation of both the variations in the photoluminescence spectra of colloidally synthesized nanoparticles and observed deep gap levels in porous silicon.     

Electronic structure and spectra of CuO

We report the electronic structure of monoclinic CuO as obtained from first principles calculations utilizing density functional theory plus effective Coulomb interaction (DFT + U) method. In contrast to standard DFT calculations taking into account electronic correlations in DFT + U gave antiferromagnetic insulator with energy gap and magnetic moment values in good agreement with experimental data. The electronic states around the Fermi level are formed by partially filled Cu 3d _x²?y² orbitals with significant admixture of O 2p states. Theoretical spectra are calculated using DFT + U electronic structure method and their comparison with experimental photoemission and optical spectra show very good agreement.     

Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility

High carrier mobility and a direct semiconducting band gap are two key properties of materials for electronic device applications. Using first-principles calculations, we predict two types of two-dimensional semiconductors, ultrathin GeAsSe and SnSbTe nanosheets, with desirable electronic and optical properties. Both GeAsSe and SnSbTe sheets are energetically favorable, with formation energies of −0.19 and −0.09 eV/atom, respectively, and have excellent dynamical and thermal stability, as determined by phonon dispersion calculations and Born–Oppenheimer molecular dynamics simulations. The relatively weak interlayer binding energies suggest that these monolayer sheets can be easily exfoliated from the bulk crystals. Importantly, monolayer GeAsSe and SnSbTe possess direct band gaps (2.56 and 1.96 eV, respectively) and superior hole mobility (~20 000 cm²·V⁻¹·s⁻¹), and both exhibit notable absorption in the visible region. A comparison of the band edge positions with the redox potentials of water reveals that layered GeAsSe and SnSbTe are potential photocatalysts for water splitting. These exceptional properties make layered GeAsSe and SnSbTe promising candidates for use in future high-speed electronic and optoelectronic devices.     

First-principles study on the electronic and optical properties of cubic ABX3 halide perovskites

The electronic properties of ABX₃ type compounds in the cubic phase are systematically studied using the first-principles calculations. The chemical trend of their properties as A or B or X varies is fully investigated. The optical properties of the ABX₃ compounds are also investigated. Our calculations show that taking into account the spin–orbit coupling effect is crucial for predicting the accurate band gap of these halide perovskites. We predict that CH₃NH₃SnBr₃ is a promising material for solar cells absorber with a perfect band gap and good optical absorption.     

First-principles study of new half Heusler for optoelectronic applications

We report investigations of the structural, electronic and optical properties of 36 half-Heusler compounds in comparison with II–VI semiconductors using the first-principles calculations based on the density functional theory. In this work, we demonstrate the similarity in the electronic structure of these materials with that of II–VI semiconductors through the analysis of lattice parameters, band gaps and static dielectric constants at ambient pressure. The evolution of these properties under pressure is also necessary to predict new candidates for the optoelectronic devices.     

Properties of Si nanostructural modification on Si (111) surface

Si nanostructures (Si-NSs) epitaxially grown or adsorbed on Si (111) surface, with various shapes including pit-like, bars, islands, hill-like, diamond-like and double cage, were studied theoretically using density-functional theory (DFT) calculations. The electronic and optical properties of these Si-NSs were calculated, showing that the designed Si-NSs modifications can enhance the optical absorption for Si surface.     

Comparative study of structural,electronic, optical and thermoelectric properties of GaS bulk and monolayer

The structural, electronic, optical properties of GaS in bulk and monolayer forms have been studied by means of full-potential linearised augmented plane wave calculations within framework of the density functional theory. Generalised gradient approximation and Tran–Blaha modified Becke–Johnson exchange potential (mBJ) were employed for the treatment of exchange-correlation effect in calculations. Our calculated lattice parameters are in good agreement with previous theoretical results and available experimental data. The negative formation enthalpy and cohesive energy indicate that both bulk and monolayer GaS can be synthesised and stabilised experimentally. Our electronic results show that the band gap of GaS monolayer is higher than that of bulk counterpart and strong hybridisation between electronic states of constituent atoms is observed in both cases. The optical properties such as reflectivity, absorption coefficient, refractive index and optical conductivity were derived from calculated complex dielectric function for wide energy range up to 35?eV. Finally, the thermoelectric properties of GaS bulk and monolayer also were calculated using semi-classical Boltzmann theory within the constant relaxation time approximation for investigating their applicability in thermoelectric devices.     

Organic conductors in high magnetic fields: Model systems for quantum oscillation physics

Even although organic conductors have complicated crystalline structures with low symmetry and large unit cells, band structure calculations predict a multiband quasi-two-dimensional electronic structure yielding a very simple Fermi surface in most cases. Although few puzzling experimental results have been observed, data for numerous compounds are in agreement with calculations, which make them suitable systems for studying magnetic quantum oscillations in networks of orbits connected by magnetic breakdown. The state of the art of these problematics is reviewed.     

Electronic and optical properties of distorted rare-earth manganite under hydrostatic pressure

The effect of hydrostatic pressure on the crystal structure, electronic and optical properties of distorted rare-earth manganite TbMnO₃ has been studied on the basis of first-principle calculations. The results reveal that the band gaps reduce quadratically with increasing pressure. The optical properties of TbMnO₃ predict that the peaks in the dielectric function shift to higher photon energy due to the transformation of inner electronic states with increasing pressure. Otherwise, the peaks in the reflectivity spectra and loss function were also found to move to higher photon energy with pressure increasing and the relationships between the positions of these peaks and pressure can be fitted by third order polynomial expressions.     

Theoretical investigation of electronic and optical properties of andalusite within density functional theory

The electronic and optical properties of andalusite were studied by using quantum-mechanical calculations based on the density functional theory (DFT). The electronic structure shows that andalusite has a direct band gap of 5.01 eV. The complex dielectric function and optical constants, such as extinction coefficient, refractive index, reflectivity and energy-loss spectrum, are calculated. The optical properties of andalusite are discussed based on the band structure calculations. It is shown that the O-2p states and Al-3s states play a major role in optical transitions as initial and final states, respectively.     

Novel two-dimensional PdSe phase: A puckered material with excellent electronic and optical properties

By combining structural search and first-principles calculations, we predict a new stable two-dimensional PdSe monolayer, and systematically investigate its structural, electronic and optical properties. The calculated formation enthalpy, phonon spectra and molecular dynamic simulations confirm that PdSe monolayer possesses excellent thermodynamic and dynamic stability. PdSe monolayer is a semiconductor with an indirect band gap of ∼ 1.10 eV. The carrier transport of PdSe monolayer is dominated by hole and exhibits remarkable anisotropy due to the intrinsic structure anisotropy. The optical properties also show obvious anisotropic characteristic with considerable absorption coefficient and broad absorption from the visible to ultraviolet regions. Benefiting from these excellent physical properties, PdSe monolayer is expected to be a promising candidate as electronic and optoelectronic devices.     

Thermodynamic Stability,Half-Metallic and Optical Properties of Sc2CoSi [001] Film:a DFT Study

The electronic and optical characteristics of the Sc2 CoSi Heusler with L21 structure and also the surface effect on electronic and optical properties, and the ?lms thermodynamic stability of the [001] direction in four cases including:Sc-Sc, Sc-Co, Sc-Si and Co-Si terminations are studied using the ?rst principles calculations(FPLAPW) within the framework of the density functional theory(DFT). The band structure calculations represent the ferromagnetic halfmetallic properties with 100% spin polarization and 0.54 e V indirect gap in spin down for Sc2 CoSi bulk with optimized lattice parameters of 6.25 A?. The total magnetic moment obtained for this compound is-1.0 μB, which is in accordance with Slater-Pauling rule. The half-metallic(HM) behavior by 100% spin polarization at Fermi level is occurred in the Sc-Si termination with a 0.32 eV gap in down spin. The optical responses have been calculated for the bulk and ScSi termination by a red shift in these parameters and the metallic treatments have been increased. According to the thermodynamic phase diagrams, it is shown the Sc-Si and Sc-Sc terminations are more stable than other terminations.     

Electronic structure and optical properties of the HoCoSi and ErNiSi compounds

The electronic structure and the optical properties of the HoCoSi and ErNiSi compounds are studied. Spin-polarized band calculations are performed in the local electron density approximation corrected for the strong electron–electron interactions in the 4f shell of a rare-earth ion (LSDA + U method [11]). The optical constants are measured by ellipsometry in a wide wavelength range, and the frequency dependences of a number of spectral parameters are determined. The calculated densities of states are used to interpret the structural features of the interband optical conductivities of the intermetallic compounds.